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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR588DP-T1-RE3

Name: SIR588DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR588DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR588DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR588DP-T1-RE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET POWE

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Product details

Overview

SIR588DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 8.0 mΩ at V_GS = 10 V, Q_g = 14.2 nC (typ.), and continuous drain current I_D = 59.5 A (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR588DP-T1-RE3 datasheet, SIR588DP-T1-RE3 pinout, SIR588DP-T1-RE3 application, or SIR588DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 1.7 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile-Q_g = 14.2 nC (V_GS = 7.5 V), Q_gd = 2.1 nC, and Q_oss = 40 pC-enables fast, efficient hard-switching in high-frequency topologies. The device features a robust body diode with t_rr = 36 ns (typ.) and Q_rr = 32 nC (typ.) at I_F = 10 A, supporting ZVS and soft-recovery operation.

Thermally, it uses a leadless PowerPAK® SO-8 package with exposed drain copper on the bottom side, enabling direct thermal coupling to PCB copper. Its R_thJC = 1.7 °C/W (typ.) and R_thJA = 21 °C/W (t ≤ 10 s) support high-current operation under constrained thermal conditions, while the 100% UIS-tested construction ensures ruggedness in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for primary-side switch or OR-ing applications up to 48 V bus systems with margin.
R_DS(on) max. @ V_GS = 10 V	8.0 mΩ - Enables <1 W conduction loss at 35 A, critical for high-current DC/DC output stages.
Q_g typ. @ V_GS = 7.5 V	14.2 nC - Low gate drive energy reduces driver IC loading and switching loss in 300–1000 kHz converters.
I_D continuous @ T_C = 25 °C	59.5 A - Supports >500 W power delivery with appropriate heatsinking on 1" × 1" FR4 board.
R_thJC typical	1.7 °C/W - Allows junction temperature rise of only ~100 °C at 60 W dissipation, enabling compact thermal design.
V_GS(th)	2–4 V - Compatible with standard 5 V and 3.3 V logic-level gate drivers without level shifting.
C_iss	1380 pF - Predictable input capacitance simplifies gate drive loop stability analysis in high-speed designs.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad), dimensions 5.15 mm × 6.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with R_g = 0.4–1.8 Ω (typ./max); low gate resistance supports fast turn-on/turn-off control.
6, 7, 8, Bottom Pad	Drain (D)	Multi-terminal drain connection plus large exposed copper pad provides low-inductance, high-current path and primary thermal interface to PCB.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers best-in-class R_DS(on) × Q_g FOM (≈113 mΩ·nC), reducing total switching + conduction loss in high-frequency SMPS.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy handling up to E_AS = 31.25 mJ.
Optimized R_DS(on) × Q_oss FOM	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and quasi-resonant converters.
Low V_SD body diode	V_SD = 0.78 V (typ.) at I_S = 5 A enables efficient synchronous rectification without external Schottky replacement.
Exposed drain thermal pad	Enables direct PCB copper thermal spreading, achieving R_thJA = 21 °C/W (t ≤ 10 s) on minimal 1" × 1" FR4 layout.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge) operating at 200–500 kHz. IC Role / Device Role: Low-loss synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 12 V output. Use Value: R_DS(on) = 8.0 mΩ and low Q_rr = 32 nC enable >1.5% efficiency gain vs. 40 V Schottky at 20 A load, with reduced thermal stress.	Use Scenario: High-current primary switch in 48 V input telecom or server PSUs using hard-switched or ZVS topologies. IC Role / Device Role: Main power switch handling up to 59.5 A continuous drain current with 80 V V_DS rating for 48 V nominal bus. Use Value: Low R_DS(on) × Q_g minimizes combined switching and conduction loss, supporting >95% efficiency at 500 W output.
OR-ing / Hot Swap	Battery Management System
Use Scenario: Redundant power rail OR-ing in industrial PLCs or datacom equipment with 12–48 V inputs. IC Role / Device Role: Back-to-back configured N-channel MOSFET providing low-forward-drop, bidirectional current control with reverse polarity protection. Use Value: V_GS(th) = 2–4 V allows simple gate drive from rail monitor ICs; low R_DS(on) limits voltage drop to <0.5 V at 30 A.	Use Scenario: Cell-balancing or pack protection switch in 16–24 cell Li-ion battery packs (up to 80 V system). IC Role / Device Role: High-side or low-side protection switch controlling charge/discharge paths with overcurrent and short-circuit response. Use Value: 100% UIS tested and E_AS = 31.25 mJ ensure survivability during fault events; low R_DS(on) reduces self-heating during extended discharge.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., LLC, phase-shifted full-bridge) operating at 200–500 kHz.

IC Role / Device Role: Low-loss synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 12 V output.

Use Value: R_DS(on) = 8.0 mΩ and low Q_rr = 32 nC enable >1.5% efficiency gain vs. 40 V Schottky at 20 A load, with reduced thermal stress.

Use Scenario: High-current primary switch in 48 V input telecom or server PSUs using hard-switched or ZVS topologies.

IC Role / Device Role: Main power switch handling up to 59.5 A continuous drain current with 80 V V_DS rating for 48 V nominal bus.

Use Value: Low R_DS(on) × Q_g minimizes combined switching and conduction loss, supporting >95% efficiency at 500 W output.

OR-ing / Hot Swap

Battery Management System

Use Scenario: Redundant power rail OR-ing in industrial PLCs or datacom equipment with 12–48 V inputs.

IC Role / Device Role: Back-to-back configured N-channel MOSFET providing low-forward-drop, bidirectional current control with reverse polarity protection.

Use Value: V_GS(th) = 2–4 V allows simple gate drive from rail monitor ICs; low R_DS(on) limits voltage drop to <0.5 V at 30 A.

Use Scenario: Cell-balancing or pack protection switch in 16–24 cell Li-ion battery packs (up to 80 V system).

IC Role / Device Role: High-side or low-side protection switch controlling charge/discharge paths with overcurrent and short-circuit response.

Use Value: 100% UIS tested and E_AS = 31.25 mJ ensure survivability during fault events; low R_DS(on) reduces self-heating during extended discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 5.0 mΩ @ 10 V, V_DS = 60 V, Q_g = 20.5 nC - lower R_DS(on) but reduced voltage rating.	Best suited for ≤48 V primary switches where lower conduction loss outweighs voltage margin.	Select when system V_IN ≤ 42 V and R_DS(on) reduction is prioritized over 80 V headroom.
IRF7470PBF	R_DS(on) = 9.0 mΩ @ 10 V, V_DS = 80 V, Q_g = 24.5 nC, TO-252 package - same voltage rating but higher Q_g and larger footprint.	Preferred where through-hole or larger thermal mass is acceptable and gate drive capability is ample.	Choose when PCB space permits DPAK and thermal requirements allow higher R_thJA (~62 °C/W).

Compared with SiR626DP-T1-RE3, SIR588DP-T1-RE3 offers superior voltage margin for 48 V systems with transients, while versus IRF7470PBF it delivers significantly better high-frequency efficiency and smaller board area via PowerPAK® SO-8 packaging.

Availability

SIR588DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIR588DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The PowerPAK® SO-8 TrenchFET® Gen V series-including SIR588DP-T1-RE3-is engineered for high-density, high-efficiency power conversion in telecom, computing, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIR588DP-T1-RE3 at case temperature 70 °C?

The SIR588DP-T1-RE3 supports a continuous drain current of 47.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be validated against actual board layout and heatsinking in the target application. The SIR588DP-T1-RE3 maintains R_DS(on) = 8.0 mΩ at V_GS = 10 V across this range, ensuring predictable conduction loss.

Does SIR588DP-T1-RE3 require a gate resistor for reliable switching in a 500 kHz DC/DC converter?

Yes, a gate resistor is recommended for controlled turn-on/turn-off to manage EMI and prevent ringing. With Q_g = 14.2 nC (V_GS = 7.5 V) and R_g = 0.4–1.8 Ω (typ./max), a 5–10 Ω external resistor typically achieves optimal dV/dt and di/dt control at 500 kHz. The SIR588DP-T1-RE3's low intrinsic R_g makes it responsive to moderate gate drive strength, avoiding excessive overshoot or shoot-through risk.

Can SIR588DP-T1-RE3 be used in a back-to-back configuration for bidirectional OR-ing?

Yes, the SIR588DP-T1-RE3 is suitable for back-to-back N-channel configurations in OR-ing and hot-swap circuits. Its V_GS(th) = 2–4 V enables reliable enhancement-mode turn-on with standard gate drivers, and its 100% UIS-tested construction withstands reverse-bias avalanche during fault transients. When used in such configurations, the SIR588DP-T1-RE3 leverages its low R_DS(on) to minimize forward voltage drop and power loss in both directions.

What is the thermal resistance from junction to ambient (R_thJA) for SIR588DP-T1-RE3 on a standard PCB?

The SIR588DP-T1-RE3 has a typical R_thJA of 21 °C/W for t ≤ 10 s when mounted on a 1" × 1" FR4 board per the datasheet test condition. This value assumes surface mounting with no additional heatsink; steady-state R_thJA is not characterized due to package limitations. For thermal design, use R_thJC = 1.7 °C/W (typ.) with measured case temperature, as the SIR588DP-T1-RE3's exposed drain pad dominates heat transfer to the PCB.

Is SIR588DP-T1-RE3 suitable for use in automotive-grade power modules?

The SIR588DP-T1-RE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications-not automotive. While its operating junction temperature range (−55 °C to +150 °C) meets automotive ambient requirements, it lacks the required qualification testing, failure analysis reporting, and PPAP documentation. For automotive use, consider Vishay's AEC-Q101-qualified alternatives like SQJQ480E or SIJQ480E instead of the SIR588DP-T1-RE3.

SIR588DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 17.2A (Ta), 59.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 59.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR588DP-T1-RE3 FAQ

1.How can I place an order for SIR588DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR588DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR588DP-T1-RE3 reliable?

The price and inventory of SIR588DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR588DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR588DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR588DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR588DP-T1-RE3?

SIR588DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR588DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR588DP-T1-RE3?

For technical support, including SIR588DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR588DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR588DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR588DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR588DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR588DP-T1-RE3?

All SIR588DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR588DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR588DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR588DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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