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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR606DP-T1-GE3

Name: SIR606DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR606DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR606DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR606DP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 37A PPAK SO-8

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Product details

Overview

SIR606DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 single package, with R_DS(on) = 0.0162 Ω at V_GS = 10 V, 37 A continuous drain current (T_J = 150 °C), and 14.6 nC total gate charge - optimized for high-efficiency DC/DC primary-side switching in telecom/server 48 V full/half-bridge converters.

For engineers reviewing the SIR606DP-T1-GE3 datasheet, SIR606DP-T1-GE3 pinout, SIR606DP-T1-GE3 application, or SIR606DP-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low R_DS(on) at 6–10 V gate drive, robust UIS rating, thermal performance matching DPAK, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio (24.3 nC / 4.9 nC typical at V_GS = 10 V), enabling efficient hard-switching in isolated DC/DC topologies. Its 100 % R_g and UIS tested qualification ensures gate robustness and avalanche energy handling up to 20 mJ.

The PowerPAK® SO-8 single package features exposed copper drain pads on the bottom side for direct thermal conduction, delivering R_thJC = 2.1 °C/W (typical) - equivalent to DPAK - while maintaining SO-8 footprint compatibility and 1.04 mm profile for space-constrained industrial and server power designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V telecom/server DC/DC converters with margin against voltage transients.
R_DS(on) max	0.0162 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 30 A, critical for high-current primary switches.
I_D continuous	37 A at T_C = 25 °C - delivers high current density in compact PowerPAK SO-8 without external heatsink under forced-air cooling.
Q_g typ	24.3 nC at V_GS = 10 V - balances switching speed and gate driver loss in 100–500 kHz DC/DC operation.
R_thJC max	2.8 °C/W - allows direct thermal path to PCB copper, enabling DPAK-level thermal performance in SO-8 footprint.
E_AS	20 mJ - provides single-pulse avalanche ruggedness for reliable operation during inductive turn-off stress.
V_GS(th)	2.4–3.6 V - ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers in synchronous rectifier or half-bridge configurations.

Pinout & Package

Package: PowerPAK® SO-8 single - leadless, surface-mount, 6.15 mm × 5.15 mm × 1.04 mm, with exposed drain copper on bottom side for enhanced thermal conduction. Compatible with standard SO-8 land patterns and reflow profiles (peak 255 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain pad with bottom-exposed copper - forms primary thermal interface to PCB copper pour.
G (pin 1 of top view, labeled "G")	Gate (G)	Single gate input with R_g = 0.3–2.4 Ω - enables precise gate drive tuning for EMI vs. switching loss trade-offs.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers lowest R_DS(on) × Q_g figure-of-merit in 100 V SO-8 class - reduces both conduction and switching losses simultaneously.
100 % R_g and UIS tested	Guarantees gate oxide integrity and single-pulse avalanche capability per unit - eliminates field failure risk in unclamped inductive loads.
PowerPAK® SO-8 package	Matches SO-8 footprint but achieves DPAK-equivalent R_thJC - enables drop-in thermal upgrade without PCB redesign.
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for industrial, telecom, and green-energy applications.
Body diode t_rr	39–78 ns - supports synchronous rectification with low reverse recovery loss in secondary-side applications.

Applications

DC/DC Primary-Side Switch	Telecom/Server 48 V Converter
Use Scenario: High-frequency (200–500 kHz) full-bridge or phase-shifted ZVS converter in 48 V intermediate bus architecture. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 30+ A peak drain current with fast turn-on/off to minimize dead-time losses. Use Value: 0.0162 Ω R_DS(on) limits conduction loss to <1.5 W at 30 A, while 24.3 nC Q_g enables clean 10 ns–40 ns switching transitions.	Use Scenario: Half-bridge isolated DC/DC module powering ASICs/FPGAs in cloud server racks with strict thermal envelope. IC Role / Device Role / Timing Role: Low-inductance, high-current primary switch operating at 350 kHz with tight thermal coupling to multilayer PCB ground plane. Use Value: PowerPAK SO-8's 2.1 °C/W R_thJC keeps junction temperature ≤115 °C at 2.7 W dissipation - 43 °C cooler than standard SO-8.
Industrial Motor Drive Control	Synchronous Rectification
Use Scenario: Three-phase inverter stage in servo drives or HVAC compressors requiring 100 V blocking and 30 A RMS output current. IC Role / Device Role / Timing Role: High-side IGBT/MOSFET companion switch in 60–100 kHz PWM inverters with overcurrent protection. Use Value: 100 % UIS tested rating ensures survivability during motor stall or short-circuit events with 20 mJ avalanche energy absorption.	Use Scenario: Secondary-side synchronous rectifier in LLC resonant converter for 12 V/48 V output with zero-voltage switching. IC Role / Device Role / Timing Role: Low-V_GS(th) (2.4–3.6 V) N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Body diode t_rr = 39 ns and Q_rr = 51 nC minimize reverse recovery loss, while 0.79 V V_SD at 4 A lowers conduction loss vs. 0.45 V Schottky.

DC/DC Primary-Side Switch

Telecom/Server 48 V Converter

Use Scenario: High-frequency (200–500 kHz) full-bridge or phase-shifted ZVS converter in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 30+ A peak drain current with fast turn-on/off to minimize dead-time losses.

Use Value: 0.0162 Ω R_DS(on) limits conduction loss to <1.5 W at 30 A, while 24.3 nC Q_g enables clean 10 ns–40 ns switching transitions.

Use Scenario: Half-bridge isolated DC/DC module powering ASICs/FPGAs in cloud server racks with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-inductance, high-current primary switch operating at 350 kHz with tight thermal coupling to multilayer PCB ground plane.

Use Value: PowerPAK SO-8's 2.1 °C/W R_thJC keeps junction temperature ≤115 °C at 2.7 W dissipation - 43 °C cooler than standard SO-8.

Industrial Motor Drive Control

Synchronous Rectification

Use Scenario: Three-phase inverter stage in servo drives or HVAC compressors requiring 100 V blocking and 30 A RMS output current.

IC Role / Device Role / Timing Role: High-side IGBT/MOSFET companion switch in 60–100 kHz PWM inverters with overcurrent protection.

Use Value: 100 % UIS tested rating ensures survivability during motor stall or short-circuit events with 20 mJ avalanche energy absorption.

Use Scenario: Secondary-side synchronous rectifier in LLC resonant converter for 12 V/48 V output with zero-voltage switching.

IC Role / Device Role / Timing Role: Low-V_GS(th) (2.4–3.6 V) N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: Body diode t_rr = 39 ns and Q_rr = 51 nC minimize reverse recovery loss, while 0.79 V V_SD at 4 A lowers conduction loss vs. 0.45 V Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.0125 Ω @ 10 V, higher 42 A I_D, same PowerPAK SO-8 package and pinout.	Better conduction efficiency in high-current (>35 A) primary-side roles; identical layout compatibility.	Select when lower R_DS(on) justifies marginal cost increase and thermal margin permits higher current density.
IRF7470PBF	SO-8 package, R_DS(on) = 0.014 Ω @ 10 V, but R_thJA = 62 °C/W (vs. 25 °C/W for SIR606DP-T1-GE3) due to standard leaded SO-8 construction.	Lower thermal performance limits usable current in ambient >70 °C; requires larger heatsink or airflow.	Choose only if legacy SO-8 land pattern must be retained without copper pour enhancement and thermal budget allows 30 °C higher T_J.

Compared with SiR626DP-T1-GE3, SIR606DP-T1-GE3 trades 0.0037 Ω higher R_DS(on) for proven cost-optimized balance of switching/conduction loss; versus IRF7470PBF, it delivers 2.5× lower R_thJC and eliminates lead-related solder joint reliability concerns in high-reliability server deployments.

Availability

SIR606DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom/server 48 V DC/DC converters, industrial motor drives, and synchronous rectification circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SIR606DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIR606DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-efficiency, high-density DC/DC conversion in datacenter, industrial, and telecom infrastructure where thermal performance and reliability are critical.

FAQ

What is the maximum continuous drain current rating for SIR606DP-T1-GE3 at 70 °C case temperature?

The SIR606DP-T1-GE3 supports 29.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be validated against actual board-level thermal design using the 2.1 °C/W R_thJC parameter. The SIR606DP-T1-GE3 datasheet confirms this rating applies to steady-state conditions with proper PCB copper thermal management.

Does SIR606DP-T1-GE3 support gate drive voltages below 10 V, and what is its R_DS(on) at 6 V?

Yes, the SIR606DP-T1-GE3 is fully characterized down to 6 V gate drive: R_DS(on) is 0.0200 Ω max at V_GS = 6 V and I_D = 10 A. Its 2.4–3.6 V V_GS(th) range ensures reliable turn-on with 5 V or 3.3 V logic-level controllers. The SIR606DP-T1-GE3 maintains usable on-resistance across this range, making it suitable for gate-drive-limited applications like microcontroller-based motor control.

How does the PowerPAK® SO-8 package of SIR606DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?

The SIR606DP-T1-GE3's PowerPAK® SO-8 package achieves R_thJC = 2.1 °C/W (typical), matching DPAK performance and improving ~8× over standard SO-8 (16 °C/W). This is enabled by bottom-exposed drain copper directly bonded to PCB copper pour. In a 105 °C board environment dissipating 2.7 W, the SIR606DP-T1-GE3 junction reaches only 107 °C - 43 °C cooler than a standard SO-8 device under identical conditions.

Is SIR606DP-T1-GE3 suitable for synchronous rectification, and what body diode parameters support this use?

Yes, the SIR606DP-T1-GE3 is qualified for synchronous rectification with V_SD = 0.79 V (typ) at I_S = 4 A and t_rr = 39 ns (typ) at T_J = 25 °C. Its low Q_rr = 51 nC and fast recovery minimize reverse recovery loss in LLC or phase-shifted full-bridge topologies. The SIR606DP-T1-GE3 body diode characteristics are explicitly validated in the datasheet for bidirectional conduction applications.

What is the total gate charge (Q_g) of SIR606DP-T1-GE3 at 7.5 V gate drive, and how does it impact switching loss?

The SIR606DP-T1-GE3 has Q_g = 18.1 nC (typ) at V_GS = 7.5 V and V_DS = 50 V. This moderate gate charge enables efficient 300–500 kHz switching with standard gate drivers while limiting driver power loss. Combined with Q_gd = 4.9 nC, it yields a low Q_gd/Q_g ratio (~27 %), supporting clean Miller plateau transition and reduced EMI in hard-switched DC/DC converters using the SIR606DP-T1-GE3.

SIR606DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 16.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 6 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 44.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR606DP-T1-GE3 FAQ

1.How can I place an order for SIR606DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR606DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR606DP-T1-GE3 reliable?

The price and inventory of SIR606DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR606DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR606DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR606DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR606DP-T1-GE3?

SIR606DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR606DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR606DP-T1-GE3?

For technical support, including SIR606DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR606DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR606DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR606DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR606DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR606DP-T1-GE3?

All SIR606DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR606DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR606DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR606DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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