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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR608DP-T1-RE3

Name: SIR608DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR608DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR608DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR608DP-T1-RE3.pdf

Description:: MOSFET N-CH 45V 51A/208A PPAK

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Product details

Overview

SIR608DP-T1-RE3 from Vishay Siliconix is an N-channel 45 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.20 mΩ at V_GS = 10 V and 1.80 mΩ at V_GS = 4.5 V, with 50.5 nC typical total gate charge, optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIR608DP-T1-RE3 datasheet, SIR608DP-T1-RE3 pinout, SIR608DP-T1-RE3 application, or SIR608DP-T1-RE3 equivalent, this device supports high-current switching up to 208 A (T_C = 25 °C), features 100 % R_g and UIS testing, and targets high-power-density industrial and computing power supplies where low Q_g/Q_oss and thermal robustness are critical.

Technical Context

This MOSFET employs trench-based silicon architecture with optimized cell layout to minimize conduction and switching losses. Its low R_DS(on) and tuned gate charge profile enable efficient operation in hard-switched and synchronous rectifier topologies across 12 V–48 V input rails.

The device integrates a robust body diode with 52 ns typical reverse recovery time and 71 nC Q_rr, supporting fast freewheeling in buck and LLC secondary-side applications. Thermal design leverages the PowerPAK SO-8's exposed-drain copper pad for low 0.9 °C/W typical R_thJC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	45 V - Maximum drain-source blocking voltage; defines safe operating range in 36 V nominal systems.
R_DS(on) @ 10 V	1.20 mΩ max - Enables <1 W conduction loss at 200 A, critical for >95 % efficiency in high-current VRMs.
R_DS(on) @ 4.5 V	1.80 mΩ max - Ensures strong enhancement-mode turn-on with 5 V gate drivers, supporting logic-level control.
Q_g typ.	50.5 nC - Low gate charge reduces driver power and switching loss, enabling >1 MHz operation in GaN-assisted designs.
I_D (T_C = 25 °C)	208 A - Continuous current rating under heatsink-cooled conditions; sets PCB copper and thermal pad sizing baseline.
R_thJC max.	1.2 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsinks or PCB copper planes.
V_GS(th)	1.1–2.3 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation.

Pinout & Package

PowerPAK® SO-8 single-die package with exposed drain paddle on bottom side; 5.15 mm × 6.15 mm footprint; lead (Pb)-free and halogen-free construction per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four drain terminals connected to exposed copper paddle; primary thermal and current path to PCB ground plane.
Gate (G)	Control input	Single gate terminal (Pin 1 labeled in top view); requires <1 Ω gate resistor to damp ringing due to low R_g (0.3–1.5 Ω).

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Optimized cell pitch and trench depth deliver 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation.
100 % R_g tested	Ensures gate resistance ≤1.5 Ω, guaranteeing consistent switching speed and driver compatibility.
100 % UIS tested	Validated unclamped inductive switching capability up to 50 A and 125 mJ, confirming ruggedness in motor drive fault conditions.
Low Q_oss	59 pC typical output charge - minimizes turn-off loss and improves light-load efficiency in resonant converters.
Exposed drain paddle	Enables <0.9 °C/W thermal resistance to heatsink; eliminates need for via-in-pad thermal relief in high-power layouts.

Applications

Server VRM Output Stage	Industrial DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A peak. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes; commutates during low-side conduction phase with precise timing relative to high-side FET. Use Value: 1.20 mΩ R_DS(on) cuts conduction loss by >40 % vs. legacy 2.5 mΩ devices, directly improving full-load efficiency and reducing thermal load on PCB.	Use Scenario: 48 V input to 12 V isolated DC/DC module for factory automation I/O modules. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or active-clamp forward topology; conducts during transformer reset interval. Use Value: 50.5 nC Q_g allows use of low-power gate drivers (e.g., Si823Hx), reducing auxiliary supply burden and board space.
BLDC Motor Inverter	Telecom Rectifier Module
Use Scenario: 24–48 V three-phase inverter driving brushless DC motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; handles PWM-modulated current with fast turn-off to minimize shoot-through risk. Use Value: 52 ns body diode t_rr and 71 nC Q_rr suppress voltage spikes during freewheeling, eliminating need for external snubbers in compact motor drives.	Use Scenario: 3 kW telecom rectifier converting -48 V DC to intermediate bus (e.g., 12 V) for distributed power architecture. IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology; operates at 100–200 kHz with zero-voltage switching. Use Value: 1244 pF C_oss and 120 pF C_rss support ZVS down to light loads, maintaining >96 % efficiency across 10–100 % load range.

Server VRM Output Stage

Industrial DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A peak.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes; commutates during low-side conduction phase with precise timing relative to high-side FET.

Use Value: 1.20 mΩ R_DS(on) cuts conduction loss by >40 % vs. legacy 2.5 mΩ devices, directly improving full-load efficiency and reducing thermal load on PCB.

Use Scenario: 48 V input to 12 V isolated DC/DC module for factory automation I/O modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped or active-clamp forward topology; conducts during transformer reset interval.

Use Value: 50.5 nC Q_g allows use of low-power gate drivers (e.g., Si823Hx), reducing auxiliary supply burden and board space.

BLDC Motor Inverter

Telecom Rectifier Module

Use Scenario: 24–48 V three-phase inverter driving brushless DC motors in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; handles PWM-modulated current with fast turn-off to minimize shoot-through risk.

Use Value: 52 ns body diode t_rr and 71 nC Q_rr suppress voltage spikes during freewheeling, eliminating need for external snubbers in compact motor drives.

Use Scenario: 3 kW telecom rectifier converting -48 V DC to intermediate bus (e.g., 12 V) for distributed power architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology; operates at 100–200 kHz with zero-voltage switching.

Use Value: 1244 pF C_oss and 120 pF C_rss support ZVS down to light loads, maintaining >96 % efficiency across 10–100 % load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.45 mΩ @ 10 V; Q_g = 42 nC; same PowerSO-8 package but non-exposed drain.	Higher R_thJA (20 °C/W vs. 15 °C/W) limits ambient-rated current; less suitable for convection-cooled telecom modules.	Select when gate drive power is priority over thermal performance; verify PCB thermal relief for non-exposed drain.
NTMFS4C027NT1G	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 58 nC; SO-8FL package with 0.5 mm thinner profile.	Lower height (0.9 mm) fits ultra-low-profile server DIMMs; higher Q_g increases driver loss above 500 kHz.	Prefer for space-constrained memory power delivery; avoid in >1 MHz switching unless driver is oversized.

Compared with IRF6642TRPBF and NTMFS4C027NT1G, the SIR608DP-T1-RE3 delivers the lowest R_DS(on) × Q_g product (60.6 mΩ·nC), best thermal interface via exposed drain, and highest continuous current rating-making it optimal for thermally demanding, high-efficiency server and industrial power stages.

Availability

SIR608DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and BLDC motor inverters requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free/halogen-free sourcing.

Supply support for SIR608DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR608DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and motor control applications where low R_DS(on), low gate charge, and rugged UIS performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIR608DP-T1-RE3 at case temperature of 70 °C?

The SIR608DP-T1-RE3 has a maximum continuous drain current (I_D) of 166 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for thermal derating beyond 25 °C case temperature. The SIR608DP-T1-RE3 must be mounted on a thermally adequate PCB or heatsink to sustain this current without exceeding the 150 °C maximum junction temperature.

Does SIR608DP-T1-RE3 support 4.5 V gate drive in high-efficiency synchronous rectifier designs?

Yes, the SIR608DP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) guaranteed at 1.80 mΩ max and total gate charge of 50.5 nC typ. This enables reliable enhancement-mode operation with standard 5 V logic-level gate drivers in synchronous buck and LLC rectifier stages, making the SIR608DP-T1-RE3 suitable for systems where 10 V bias rails are unavailable or undesirable.

How is the thermal performance of SIR608DP-T1-RE3 validated, and what is its R_thJC value?

The SIR608DP-T1-RE3 has a maximum junction-to-case (drain) thermal resistance (R_thJC) of 1.2 °C/W, with typical value of 0.9 °C/W. This is measured under steady-state conditions with the device mounted on a standardized heatsink per JEDEC standards. The exposed drain paddle in the PowerPAK SO-8 package provides direct thermal conduction, and the SIR608DP-T1-RE3 datasheet includes transient thermal impedance curves for dynamic thermal modeling.

Is SIR608DP-T1-RE3 qualified for automotive applications?

No, the SIR608DP-T1-RE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. While it meets Pb-free and halogen-free requirements (per Vishay's material categorization doc #99912), it lacks automotive-specific stress testing, failure analysis reporting, and PPAP documentation. For automotive-grade equivalents, consult Vishay's AQ series or contact Aetrix for qualified alternatives to SIR608DP-T1-RE3.

What is the body diode reverse recovery charge (Q_rr) of SIR608DP-T1-RE3, and why does it matter in synchronous rectifier use?

The SIR608DP-T1-RE3 has a typical body diode reverse recovery charge (Q_rr) of 71 nC, measured at I_F = 10 A, di/dt = 100 A/μs, and T_J = 25 °C. In synchronous rectifier applications, low Q_rr minimizes energy loss and voltage overshoot during body diode commutation, reducing EMI and improving efficiency-especially critical in high-frequency, high-current DC/DC converters where the SIR608DP-T1-RE3 is commonly deployed.

SIR608DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Ta), 208A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 8900 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR608DP-T1-RE3 FAQ

1.How can I place an order for SIR608DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR608DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR608DP-T1-RE3 reliable?

The price and inventory of SIR608DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR608DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR608DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR608DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR608DP-T1-RE3?

SIR608DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR608DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR608DP-T1-RE3?

For technical support, including SIR608DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR608DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR608DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR608DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR608DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR608DP-T1-RE3?

All SIR608DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR608DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR608DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR608DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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