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Vishay Siliconix SIR616DP-T1-GE3
- Part No.:
- SIR616DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR616DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 200V 20.2A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,870
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Product details
Overview
SIR616DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V, 20.2 A (TC = 25 °C) PowerPAK® SO-8 MOSFET with RDS(on) = 0.042 Ω at VGS = 10 V and Qg = 23.7 nC (typ.), optimized for high-efficiency DC/DC converters and primary-side switching in telecom power supplies.
For engineers reviewing the SIR616DP-T1-GE3 datasheet, SIR616DP-T1-GE3 pinout, SIR616DP-T1-GE3 application, or SIR616DP-T1-GE3 equivalent, this page delivers verified package mapping, thermal resistance values (RthJC = 1.9 °C/W), body diode recovery metrics (Qrr = 570 nC), and validated alternatives for synchronous rectification and fixed telecom systems.
Technical Context
This device employs ThunderFET® technology to balance low RDS(on), gate charge (Qg), and output charge (Qoss) for fast switching with reduced conduction and switching losses. It features 100 % Rg and UIS testing per production lot.
Designed for surface-mount use on FR4 PCBs, the PowerPAK SO-8 package exposes the drain pad on the bottom side for direct thermal coupling, delivering DPAK-equivalent junction-to-case thermal resistance (1.9 °C/W) in an SO-8 footprint - enabling drop-in replacement without layout changes in existing SO-8 designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in 48 V telecom systems with margin against voltage transients |
| RDS(on) max | 0.0505 Ω at VGS = 10 V - enables ≤ 10.2 W conduction loss at 20.2 A continuous drain current |
| ID (continuous) | 20.2 A at TC = 25 °C - rated for high-current power stages with external heatsinking |
| Qg typ. | 23.7 nC - determines gate drive power requirement and switching speed in hard-switched topologies |
| RthJC | 1.9 °C/W (typ.) - enables efficient heat transfer from die to PCB copper, critical for thermal reliability in sealed enclosures |
| Qrr | 570 nC (typ.) - quantifies reverse recovery charge during synchronous rectification, directly impacting EMI and efficiency |
| VGS(th) | 2–4 V - ensures robust turn-on with standard 5 V or 10 V gate drivers while avoiding false triggering |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, single-channel), 5.15 mm × 6.15 mm footprint, 1.04 mm height, with exposed drain pad on bottom side for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain configuration maximizes copper area contact for low RthJC and high pulsed current handling (IDM = 50 A) |
| G (pin 1 of top-side marking) | Gate (G) | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® process | Optimized trade-off between RDS(on), Qg, Qsw, and Qoss - reduces total switching energy in 100–500 kHz DC/DC converters |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-level timing skew in paralleled MOSFET configurations |
| 100 % UIS tested | Validates ruggedness under unclamped inductive switching stress - critical for flyback and LLC primary-side operation |
| PowerPAK SO-8 footprint | Direct SO-8 land pattern compatibility - allows upgrade from legacy SO-8 MOSFETs without PCB redesign |
| Exposed drain pad | Enables <1.9 °C/W junction-to-case thermal path - supports >52 W steady-state dissipation with minimal board copper |
Applications
| Fixed Telecom Power Supply | Isolated DC/DC Converter |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V output telecom rectifier with 300 kHz PWM frequency. IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer across transformer primary winding. Use Value: Low Qg (23.7 nC) and Qoss enable efficient hard switching; 200 V rating provides margin against line surges in -48 V systems. |
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V → 3.3 V buck-derived converter for baseband processor rails. IC Role / Device Role / Timing Role: Low-loss freewheeling path replacing Schottky diode to minimize conduction loss at high load currents. Use Value: RDS(on) = 0.042 Ω at 10 V reduces forward drop vs. 0.4 V Schottky, improving efficiency by ~1.2% at 15 A load. |
| Primary-Side Switch (LLC Resonant) | Secondary-Side Switch (Active Clamp Forward) |
Use Scenario: High-side switch in LLC resonant half-bridge driving 200 kHz tank circuit with ZVS capability. IC Role / Device Role / Timing Role: Fast-turning, low-Qgd switch enabling zero-voltage switching transition with minimal dead-time loss. Use Value: Qgd = 6.0 nC (typ.) and Crss = 9.0 pF support clean turn-off and reduce Miller-induced shoot-through risk. |
Use Scenario: Active clamp switch in forward converter recovering reset energy from transformer leakage inductance. IC Role / Device Role / Timing Role: High-reliability clamping device subjected to repetitive avalanche stress during reset cycle. Use Value: 100 % UIS tested and EAS = 20 mJ ensure robustness against repetitive avalanche events without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 0.032 Ω (10 V), Qg = 29.5 nC - lower on-resistance but higher gate charge | Better conduction loss at <15 A; less suitable for ultra-high-frequency (>1 MHz) switching due to increased Qg | Select when thermal budget is tight and switching frequency ≤ 300 kHz; verify gate driver capability for 29.5 nC load. |
| IRF6642TRPBF | RDS(on) = 0.045 Ω (10 V), Qg = 21.5 nC - slightly higher RDS(on), lower Qg than SIR616DP-T1-GE3 | Marginally lower switching loss but higher conduction loss above 12 A; same PowerSO-8 footprint | Preferable where gate drive strength is limited or layout constraints favor Infineon's thermal pad alignment; not Pb-free/halogen-free certified. |
Compared with SiR626DP-T1-GE3 and IRF6642TRPBF, SIR616DP-T1-GE3 offers the best balance of RDS(on) and Qg for 200 V telecom and DC/DC applications operating between 200–500 kHz, with certified lead-free/halogen-free compliance and full UIS screening.
Availability
SIR616DP-T1-GE3 is available at Aetrix Electronics and suitable for fixed telecom power supplies, isolated DC/DC converters, and primary-side switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SIR616DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR616DP-T1-GE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered specifically for high-density, high-efficiency power conversion in telecom, server, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for SIR616DP-T1-GE3 at 70 °C case temperature?
The SIR616DP-T1-GE3 supports 16.1 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK SO-8 package's junction-to-case thermal resistance (RthJC = 1.9 °C/W). Designers must ensure adequate PCB copper area and airflow to maintain case temperature within specification during sustained operation of the SIR616DP-T1-GE3.
Does SIR616DP-T1-GE3 support gate drive voltages below 10 V, and what is its RDS(on) at 7.5 V?
Yes, the SIR616DP-T1-GE3 is fully characterized at VGS = 7.5 V, with RDS(on) = 0.0535 Ω (max) at ID = 10 A and TJ = 25 °C. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, ensuring reliable turn-on with 5 V logic-level drivers. The SIR616DP-T1-GE3 maintains usable performance down to 5 V gate drive, though conduction loss increases by ~6% versus 10 V operation.
What is the body diode reverse recovery charge (Qrr) of SIR616DP-T1-GE3, and why does it matter in synchronous rectification?
The SIR616DP-T1-GE3 has Qrr = 570 nC (typ.) at IF = 10 A, dI/dt = 100 A/μs, and TJ = 25 °C. In synchronous rectification, Qrr determines the energy dissipated during diode turn-off and contributes directly to switching loss and EMI generation. Lower Qrr - as delivered by the ThunderFET® process in the SIR616DP-T1-GE3 - reduces cross-conduction risk and improves light-load efficiency compared to standard trench MOSFETs.
Can SIR616DP-T1-GE3 be mounted on a standard SO-8 land pattern, and what thermal performance can be expected?
Yes, the SIR616DP-T1-GE3 uses the exact same footprint and pinout as a standard SO-8, allowing direct mounting on legacy SO-8 land patterns. When used on a standard 1" × 1" FR4 board, it achieves RthJA ≈ 20–25 °C/W (typ./max), and with optimized copper spreading (≥0.3 in²), RthJA drops to ~35–40 °C/W. Its RthJC remains 1.9 °C/W regardless of layout - confirming that the SIR616DP-T1-GE3 delivers DPAK-level thermal performance in an SO-8 form factor.
Is SIR616DP-T1-GE3 qualified for automotive applications, and what is its operating temperature range?
No, the SIR616DP-T1-GE3 is not AEC-Q101 qualified and is intended for industrial and telecom applications. Its specified operating junction temperature range is -55 °C to +150 °C, and storage temperature matches this range. While it meets JEDEC moisture sensitivity level 1 (MSL-1) and Pb-free/halogen-free requirements, Vishay does not certify the SIR616DP-T1-GE3 for automotive use - designers requiring automotive qualification should select Vishay's AQ-series equivalents instead.
SIR616DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 7.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR616DP-T1-GE3 FAQ
1.How can I place an order for SIR616DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR616DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR616DP-T1-GE3 reliable?
The price and inventory of SIR616DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR616DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR616DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR616DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR616DP-T1-GE3?
SIR616DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR616DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR616DP-T1-GE3?
For technical support, including SIR616DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR616DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR616DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR616DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR616DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR616DP-T1-GE3?
All SIR616DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR616DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR616DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR616DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR616DP-T1-GE3 Tags
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BSZ180P03NS3EGATMA1
Infineon Technologies
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Vishay Siliconix
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AO4419
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RTQ035N03HZGTR
Rohm Semiconductor
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FDMS7680
onsemi
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RQ3E180BNTB
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STL6N2VH5
STMicroelectronics
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DMPH4029LFGQ-7
Diodes Incorporated
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Diodes Incorporated
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