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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR618DP-T1-GE3

Name: SIR618DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR618DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR618DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR618DP-T1-GE3.pdf

Description:: MOSFET N-CH 200V 14.2A PPAK SO-8

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Product details

Overview

SIR618DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V (D-S) Power MOSFET in PowerPAK® SO-8 single package, delivering 14.2 A continuous drain current at T_C = 25 °C, 0.095 Ω R_DS(on) at V_GS = 10 V, and 10.6 nC total gate charge - optimized for primary/secondary side switching in telecom DC/DC converters and battery management systems.

For engineers reviewing the SIR618DP-T1-GE3 datasheet, SIR618DP-T1-GE3 pinout, SIR618DP-T1-GE3 application, or SIR618DP-T1-GE3 equivalent, this device offers verified UIS and 100 % R_g testing, ThunderFET®-optimized dynamic parameters (Q_sw, Q_oss), and lead-free/halogen-free compliance per Vishay document 67747.

Technical Context

This MOSFET employs ThunderFET® technology to balance low R_DS(on) (0.095 Ω @ 10 V), fast switching (t_d(on) = 8 ns, t_f = 8 ns @ V_GEN = 10 V), and minimized output charge (Q_oss = 21.5 nC). Its PowerPAK SO-8 package provides DPAK-equivalent thermal performance (R_thJC = 2.0 °C/W max) with SO-8 footprint compatibility.

The device features a body diode with 14 A continuous source-drain current, 0.84 V forward voltage at 5 A, and 102 ns reverse recovery time - enabling robust synchronous rectification and bidirectional power flow in isolated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 48 V telecom and 100–200 V bus applications without derating.
R_DS(on) max	0.095 Ω @ V_GS = 10 V - enables ≤1.1 W conduction loss at 10 A, critical for high-efficiency DC/DC stages.
I_D continuous	14.2 A @ T_C = 25 °C - sustains full-load operation in compact telecom power supplies with minimal heatsinking.
Q_g typ	10.6 nC @ V_GS = 7.5 V - reduces gate drive power and enables efficient operation with standard PWM controllers.
R_thJC max	2.6 °C/W - allows direct thermal coupling to PCB copper, achieving DPAK-level cooling in SO-8 footprint.
V_GS(th)	2–4 V - ensures reliable turn-on with 5 V logic-level drivers and avoids false triggering in noisy environments.
E_AS	5 mJ - withstands single-pulse avalanche stress during inductive load switching or fault transients.

Pinout & Package

Package: PowerPAK® SO-8 Single - leadless, 5.15 mm × 6.15 mm footprint, exposed drain pad on bottom for low-thermal-resistance mounting. Compatible with standard SO-8 land patterns (per AN821); no PCB redesign required.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain structure maximizes copper area for thermal conduction and minimizes R_DS(on) parasitics.
G (Pin 1 of top view, labeled "G")	Gate (G)	Single gate terminal with 1.1 Ω max gate resistance - ensures stable Miller immunity and controlled dV/dt during commutation.

Key Features

Feature	Design Value
ThunderFET® optimization	Simultaneous minimization of R_DS(on), Q_g, Q_sw, and Q_oss - delivers higher efficiency than conventional TrenchFET® MOSFETs at 100–200 V range.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in hard-switched converters.
PowerPAK SO-8 thermal performance	R_thJC = 2.0 °C/W typical - matches DPAK cooling capability while retaining SO-8 layout compatibility and lower profile.
Body diode characterization	t_rr = 102 ns, Q_rr = 281 nC - enables predictable synchronous rectification timing and reduces snubber losses in LLC resonant converters.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - certified per Vishay document 99912 for green manufacturing.

Applications

Telecom DC/DC Converters	Battery Management Systems
Use Scenario: 48 V input, 12 V output isolated flyback or forward converter in base station power modules. IC Role / Device Role / Timing Role: Primary-side switch handling 10–14 A peak current at 200 kHz–1 MHz, requiring low Q_g and high V_DS margin. Use Value: 0.095 Ω R_DS(on) and 10.6 nC Q_g reduce conduction + switching losses by ≥12 % vs. legacy SO-8 MOSFETs, improving system efficiency to >92 %.	Use Scenario: High-side protection switch and charge/discharge path control in 16–48 V Li-ion battery packs. IC Role / Device Role / Timing Role: Load switch with overcurrent and short-circuit protection, operating in linear and saturated modes. Use Value: 200 V V_DS rating accommodates transient spikes up to ±150 V; 14 A I_D supports 50 A burst currents via pulse derating.
Primary Side Switching	Secondary Side Switching
Use Scenario: Main switching element in active clamp forward or half-bridge topology for industrial 24–48 V PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current switch with fast turn-off (t_f = 8 ns) to minimize dead-time losses. Use Value: Low Q_gd/Q_g ratio (3.4/10.6 ≈ 0.32) improves Miller immunity and enables clean gate drive under high dV/dt conditions.	Use Scenario: Synchronous rectifier in secondary-side of isolated DC/DC converters for server VRMs and PoE injectors. IC Role / Device Role / Timing Role: Low-V_SD (0.84 V) body diode and fast t_rr (102 ns) support precise gate timing for zero-voltage switching. Use Value: Body diode V_SD < 1.1 V at 5 A reduces forward conduction loss by 35 % vs. Schottky alternatives, lowering thermal stress on PCB.

Telecom DC/DC Converters

Battery Management Systems

Use Scenario: 48 V input, 12 V output isolated flyback or forward converter in base station power modules.

IC Role / Device Role / Timing Role: Primary-side switch handling 10–14 A peak current at 200 kHz–1 MHz, requiring low Q_g and high V_DS margin.

Use Value: 0.095 Ω R_DS(on) and 10.6 nC Q_g reduce conduction + switching losses by ≥12 % vs. legacy SO-8 MOSFETs, improving system efficiency to >92 %.

Use Scenario: High-side protection switch and charge/discharge path control in 16–48 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Load switch with overcurrent and short-circuit protection, operating in linear and saturated modes.

Use Value: 200 V V_DS rating accommodates transient spikes up to ±150 V; 14 A I_D supports 50 A burst currents via pulse derating.

Primary Side Switching

Secondary Side Switching

Use Scenario: Main switching element in active clamp forward or half-bridge topology for industrial 24–48 V PSUs.

IC Role / Device Role / Timing Role: High-voltage, high-current switch with fast turn-off (t_f = 8 ns) to minimize dead-time losses.

Use Value: Low Q_gd/Q_g ratio (3.4/10.6 ≈ 0.32) improves Miller immunity and enables clean gate drive under high dV/dt conditions.

Use Scenario: Synchronous rectifier in secondary-side of isolated DC/DC converters for server VRMs and PoE injectors.

IC Role / Device Role / Timing Role: Low-V_SD (0.84 V) body diode and fast t_rr (102 ns) support precise gate timing for zero-voltage switching.

Use Value: Body diode V_SD < 1.1 V at 5 A reduces forward conduction loss by 35 % vs. Schottky alternatives, lowering thermal stress on PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.055 Ω @ 10 V (lower), Q_g = 16.5 nC (higher), same PowerPAK SO-8 package.	Better conduction loss but slower switching; suited for lower-frequency, high-current applications where Q_g penalty is acceptable.	Select SiR626DP-T1-GE3 when R_DS(on) reduction outweighs gate drive power increase - e.g., <300 kHz operation with >15 A load.
IRF6642TRPBF	R_DS(on) = 0.052 Ω @ 10 V, Q_g = 12.5 nC, PQFN 5×6 mm package (not SO-8 compatible).	Superior R/Q trade-off but requires PCB redesign; lacks 100 % UIS test and ThunderFET®-specific ruggedness.	Choose IRF6642TRPBF only if board layout allows PQFN footprint and application demands absolute minimum R_DS(on) at expense of qualification rigor.

Compared with SIR618DP-T1-GE3, SiR626DP-T1-GE3 trades higher gate charge for lower on-resistance, while IRF6642TRPBF offers better specs in a non-drop-in package - making SIR618DP-T1-GE3 the optimal balance of SO-8 compatibility, proven ruggedness, and mid-range efficiency in telecom and battery systems.

Availability

SIR618DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom DC/DC converters, battery management systems, and primary/secondary side switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIR618DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and green manufacturing.

The SIR618DP-T1-GE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered specifically for high-efficiency, high-density power conversion in telecom infrastructure, industrial power supplies, and energy storage systems.

FAQ

What is the maximum junction temperature rating for SIR618DP-T1-GE3?

The SIR618DP-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table (Document 67747, page 1), and thermal design must ensure TJ does not exceed 150 °C under worst-case power dissipation and ambient conditions. Derating curves for ID and PD versus TC and TA are provided on pages 4–5.

Does SIR618DP-T1-GE3 support logic-level gate drive?

SIR618DP-T1-GE3 is not a logic-level MOSFET: its gate threshold voltage V_GS(th) is specified as 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 0.095 Ω. It is designed for 10 V gate drive; operation at 5 V yields significantly higher R_DS(on) (≈0.15 Ω) and reduced current capability.

Is SIR618DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes - SIR618DP-T1-GE3 uses the PowerPAK® SO-8 Single package with identical pinout and footprint to standard SO-8. Pin 1 is Gate, pins 2–4 are Source, and pins 5–8 are Drain (top view). It mounts directly onto existing SO-8 land patterns per Application Note AN821, with enhanced thermal performance due to the exposed drain pad.

What is the avalanche energy rating of SIR618DP-T1-GE3?

The SIR618DP-T1-GE3 is rated for 5 mJ single-pulse avalanche energy (E_AS) under L = 0.1 mH, as specified in the Absolute Maximum Ratings table (page 1). This value is validated per JEDEC JESD24-1 and supports robust operation during inductive switching transients in flyback and forward converters.

How is the body diode performance characterized in SIR618DP-T1-GE3?

The body diode of SIR618DP-T1-GE3 is fully characterized: V_SD = 0.84 V (typ) at I_S = 5 A, t_rr = 102 ns (typ), Q_rr = 281 nC (typ), and I_SM = 30 A (pulsed). These parameters are measured per JEDEC standards and enable accurate modeling of reverse recovery behavior in synchronous rectification designs.

SIR618DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 14.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 7.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR618DP-T1-GE3 FAQ

1.How can I place an order for SIR618DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR618DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR618DP-T1-GE3 reliable?

The price and inventory of SIR618DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR618DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR618DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR618DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR618DP-T1-GE3?

SIR618DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR618DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR618DP-T1-GE3?

For technical support, including SIR618DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR618DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR618DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR618DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR618DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR618DP-T1-GE3?

All SIR618DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR618DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR618DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR618DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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