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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR624DP-T1-GE3

Name: SIR624DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR624DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR624DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR624DP-T1-GE3.pdf

Description:: MOSFET N-CH 200V 18.6A PPAK SO-8

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Product details

Overview

SIR624DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V, 18.6 A (T_J = 150 °C) PowerPAK® SO-8 MOSFET with R_DS(on) = 0.060 Ω at V_GS = 10 V and total gate charge Q_g = 19.5 nC (typ.). It serves as a primary/secondary side switch or synchronous rectifier in high-efficiency DC/DC converters for fixed telecom infrastructure.

For engineers reviewing the SIR624DP-T1-GE3 datasheet, SIR624DP-T1-GE3 pinout, SIR624DP-T1-GE3 application, or SIR624DP-T1-GE3 equivalent, key selection criteria include its 200 V V_DS, low 1.9 °C/W R_thJC, ThunderFET®-optimized Q_g/Q_oss balance, 100 % UIS testing, and lead-free/halogen-free PowerPAK SO-8 packaging compatible with standard SO-8 land patterns.

Technical Context

This device employs Vishay's ThunderFET® technology to concurrently minimize R_DS(on), gate charge (Q_g = 19.5 nC), output charge (Q_oss = 36 nC typ.), and switching losses-enabling high-frequency operation in hard-switched and synchronous rectification topologies. Its 200 V breakdown voltage and 150 °C maximum junction temperature support robust operation in telecom power supplies.

The PowerPAK SO-8 package delivers DPAK-equivalent thermal performance (R_thJC = 1.9 °C/W max) in an SO-8 footprint, with exposed drain pads on the bottom side for direct board-level heat conduction. Gate resistance is specified at 0.5–3.0 Ω, supporting controlled turn-on/turn-off dynamics without external gate resistors in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 48 V telecom input systems with margin against transients
R_DS(on)	0.060 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 14.8 A continuous drain current (T_C = 70 °C)
I_D (cont.)	18.6 A @ T_J = 150 °C - rated for high-current secondary-side synchronous rectification
Q_g	19.5 nC (typ.) - balances switching speed and drive loss for 300–500 kHz DC/DC operation
R_thJC	1.9 °C/W (max) - allows >50 W power dissipation with minimal heatsink when mounted on copper plane
Q_oss	36 nC (typ.) - reduces turn-off energy and improves light-load efficiency in resonant converters
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drivers

Pinout & Package

Package: PowerPAK® SO-8 (leadless, single-channel), 5.15 mm × 6.15 mm footprint, 1.04 mm nominal height, with exposed drain terminals on bottom side for thermal conduction. Compatible with standard SO-8 PCB land patterns per AN821 and AN826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Eight-terminal drain pad maximizes thermal path area to PCB; no solder fillet required at exposed copper tips
G (pin 1 of top view, labeled "G")	Gate (G)	Single gate terminal with 0.5–3.0 Ω internal resistance; optimized for 10 V gate drive with low Miller plateau

Key Features

Feature	Design Value
ThunderFET® technology	Simultaneously optimizes R_DS(on), Q_g, Q_sw, and Q_oss - reduces total switching + conduction loss in 300–1000 kHz telecom PSUs
100 % R_g and UIS tested	Ensures gate robustness and avalanche energy handling (E_AS = 11.25 mJ) - eliminates field failures in unclamped inductive switching
PowerPAK SO-8 package	Delivers DPAK-level thermal resistance (1.9 °C/W) in SO-8 footprint - enables drop-in replacement without layout change
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - meets environmental requirements for telecom equipment
Body diode t_rr	126 ns (typ.) - minimizes reverse recovery loss and EMI in synchronous rectification mode

Applications

Fixed Telecom Power Supply	Isolated DC/DC Converter
Use Scenario: Primary-side switch in 48 V input, 3.3–12 V output telecom rectifiers operating at 300–500 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET controlling transformer primary current with fast turn-off to limit voltage spikes. Use Value: 200 V rating provides 2× safety margin over 48 V nominal input; low Q_g enables efficient high-frequency operation.	Use Scenario: Secondary-side synchronous rectifier in isolated forward or LLC converters for server VRMs. IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 10 A. Use Value: 0.060 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky at 15 A, directly increasing full-load efficiency.
Primary-Side Switching	Secondary-Side Switching
Use Scenario: High-side switch in non-isolated buck converters powering base station RF modules. IC Role / Device Role / Timing Role: Main power switch handling up to 18.6 A continuous current with tight thermal management via PCB copper. Use Value: R_thJC = 1.9 °C/W enables >40 W dissipation on 2-layer board - avoids need for external heatsink.	Use Scenario: Low-side synchronous rectifier in active clamp forward or phase-shifted full-bridge converters. IC Role / Device Role / Timing Role: Fast-recovery body diode (t_rr = 126 ns) and low Q_gd (5.2 nC) support precise gate timing for zero-voltage switching. Use Value: Low Q_gd/Q_g ratio improves duty cycle control and reduces shoot-through risk during dead-time transitions.

Fixed Telecom Power Supply

Isolated DC/DC Converter

Use Scenario: Primary-side switch in 48 V input, 3.3–12 V output telecom rectifiers operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET controlling transformer primary current with fast turn-off to limit voltage spikes.

Use Value: 200 V rating provides 2× safety margin over 48 V nominal input; low Q_g enables efficient high-frequency operation.

Use Scenario: Secondary-side synchronous rectifier in isolated forward or LLC converters for server VRMs.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 10 A.

Use Value: 0.060 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky at 15 A, directly increasing full-load efficiency.

Primary-Side Switching

Secondary-Side Switching

Use Scenario: High-side switch in non-isolated buck converters powering base station RF modules.

IC Role / Device Role / Timing Role: Main power switch handling up to 18.6 A continuous current with tight thermal management via PCB copper.

Use Value: R_thJC = 1.9 °C/W enables >40 W dissipation on 2-layer board - avoids need for external heatsink.

Use Scenario: Low-side synchronous rectifier in active clamp forward or phase-shifted full-bridge converters.

IC Role / Device Role / Timing Role: Fast-recovery body diode (t_rr = 126 ns) and low Q_gd (5.2 nC) support precise gate timing for zero-voltage switching.

Use Value: Low Q_gd/Q_g ratio improves duty cycle control and reduces shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 0.042 Ω @ 10 V; higher I_D = 22.5 A; same PowerPAK SO-8 package and pinout	Better conduction efficiency at >15 A; slightly higher Q_g (23.5 nC)	Select for lower R_DS(on) where thermal headroom permits higher gate drive loss
IRF6642TRPBF	R_DS(on) = 0.055 Ω @ 10 V; Q_g = 21 nC; PQFN 5x6 mm package (non-SO-8 footprint)	Requires PCB redesign; superior R_thJA (20 °C/W vs. 25 °C/W) but no SO-8 compatibility	Choose only if layout revision is acceptable and maximum ambient thermal performance is critical

Compared with SiR626DP-T1-GE3, SIR624DP-T1-GE3 trades 13 % higher R_DS(on) for 17 % lower Q_g, favoring high-frequency switching; versus IRF6642TRPBF, it retains SO-8 compatibility and simplifies qualification but requires careful thermal design due to higher R_thJA.

Availability

SIR624DP-T1-GE3 is available at Aetrix Electronics and suitable for fixed telecom power supplies, isolated DC/DC converters, and primary/secondary-side switching applications requiring stable component supply across multi-year production cycles.

Supply support for SIR624DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SiR624DP product line targets high-efficiency, high-reliability power conversion in telecom and industrial infrastructure, leveraging ThunderFET® process technology and PowerPAK® packaging to optimize thermal and switching performance.

FAQ

What is the maximum continuous drain current rating for SIR624DP-T1-GE3 at case temperature of 70 °C?

The SIR624DP-T1-GE3 is rated for 14.8 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 18.6 A rating at T_C = 25 °C and is validated under steady-state conditions with proper PCB copper thermal management. The SIR624DP-T1-GE3 must be mounted on adequate copper area to sustain this current without exceeding T_J = 150 °C.

Does SIR624DP-T1-GE3 support 5 V gate drive, or is 10 V required for full performance?

The SIR624DP-T1-GE3 is fully enhanced at V_GS ≥ 4 V (V_GS(th) max = 4 V), so it operates with 5 V logic-level gate drive. However, R_DS(on) increases to 0.064 Ω at V_GS = 7.5 V and further at 5 V - for minimum conduction loss, 10 V drive is recommended. The SIR624DP-T1-GE3 gate threshold remains stable across temperature, ensuring consistent turn-on behavior in telecom environments.

Can SIR624DP-T1-GE3 be used as a synchronous rectifier in a 12 V output, 20 A DC/DC converter?

Yes - the SIR624DP-T1-GE3 supports 18.6 A continuous drain current at T_J = 150 °C and features a fast body diode (t_rr = 126 ns typ.) ideal for synchronous rectification. At 20 A peak, conduction loss is ~1.2 W (using R_DS(on) = 0.060 Ω), manageable with 1 oz. copper on both sides of a 4-layer board. The SIR624DP-T1-GE3 also withstands 26 A continuous source-drain diode current, enabling robust freewheeling capability.

What is the thermal resistance from junction to ambient (R_thJA) for SIR624DP-T1-GE3 on a standard FR-4 board?

The SIR624DP-T1-GE3 has a typical R_thJA of 20 °C/W and maximum of 25 °C/W when mounted on a 1" × 1" FR-4 board (per datasheet note b). This value assumes standard SO-8 land pattern with no extended copper. With optimized PowerPAK SO-8 layout (e.g., 0.5 in² spreading copper), R_thJA can improve to ~12–15 °C/W. The SIR624DP-T1-GE3 thermal performance is documented in Vishay Application Note AN821.

Is SIR624DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs like IRF740?

No - while the SIR624DP-T1-GE3 uses the same 5.15 mm × 6.15 mm footprint as standard SO-8, it is a leadless PowerPAK SO-8 package with bottom-side drain/source terminals and no gull-wing leads. Pin numbering and terminal locations match SO-8 (G-S-S-S-D-D-D-D), but physical mounting and soldering differ significantly. The SIR624DP-T1-GE3 requires reflow profile compliance per www.vishay.com/doc?73257 and cannot be substituted into through-hole or gull-wing SO-8 footprints.

SIR624DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 18.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 7.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR624DP-T1-GE3 FAQ

1.How can I place an order for SIR624DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR624DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR624DP-T1-GE3 reliable?

The price and inventory of SIR624DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR624DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR624DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR624DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR624DP-T1-GE3?

SIR624DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR624DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR624DP-T1-GE3?

For technical support, including SIR624DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR624DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR624DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR624DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR624DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR624DP-T1-GE3?

All SIR624DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR624DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR624DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR624DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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