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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR638DP-T1-RE3

Name: SIR638DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR638DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR638DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR638DP-T1-RE3.pdf

Description:: MOSFET N-CH 40V 100A PPAK SO-8

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Product details

Overview

SiR638DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 Single package, delivering R_DS(on) = 0.00088 Ω at V_GS = 10 V and 100 A continuous drain current at T_C = 25 °C. It features Q_gd/Q_gs ratio < 1 for optimized switching, 100 % R_g and UIS tested, and is used in high-power-density synchronous rectification and VRM load switches.

For engineers reviewing the SiR638DP-T1-RE3 datasheet, SiR638DP-T1-RE3 pinout, SiR638DP-T1-RE3 application, or SiR638DP-T1-RE3 equivalent, this page provides verified technical context, thermal performance data, gate charge characteristics, body diode recovery metrics, and validated alternatives for high-current DC/DC and ORing designs requiring low conduction loss and fast switching.

Technical Context

This MOSFET employs a trench-based silicon structure with optimized cell pitch and gate oxide design to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 125 mJ). Its gate charge profile-Q_g = 63 nC (V_GS = 4.5 V), Q_gd = 10.6 nC-enables efficient operation in high-frequency synchronous buck converters.

The PowerPAK® SO-8 Single package delivers R_thJC = 0.9 °C/W (typ.), matching DPAK thermal performance while retaining SO-8 footprint compatibility. The exposed-drain copper pad enables direct board-level heat sinking, and the device supports reflow soldering per J-STD-020 with peak temperature up to 255 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) (max)	0.00088 Ω at V_GS = 10 V - Enables ≤ 88 mW conduction loss at 100 A, critical for VRM efficiency
I_D (continuous)	100 A at T_C = 25 °C - Supports high-current load switch and ORing applications without derating
Q_g (typ.)	63 nC at V_GS = 4.5 V - Low gate drive energy reduces controller IC loading in 300–1000 kHz switching
Q_gd/Q_gs ratio	< 1 - Minimizes Miller-induced switching delay and improves hard-switching robustness
V_GS(th)	1.1–2.3 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers
Body diode V_SD	0.73 V (typ.) at I_S = 10 A - Low forward drop reduces reverse-recovery losses in synchronous rectification

Pinout & Package

SiR638DP-T1-RE3 uses the PowerPAK® SO-8 Single package: leadless, 5.15 mm × 6.15 mm footprint, same pinout as standard SO-8, with exposed drain pad on bottom for thermal conduction. Height: 1.04 mm max.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt paths
5, 6, 7, 8	Drain (D)	Exposed copper drain pad occupies full bottom surface; primary thermal path to PCB ground plane
Gate (G)	Control terminal	Single gate pin (Pin 1 top view) with R_g = 0.3–1.5 Ω - enables precise gate drive tuning and EMI control

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon process	Delivers 12 % lower R_DS(on) vs. prior generation at same die size, enabling higher power density
100 % R_g and UIS tested	Guarantees gate robustness and single-pulse avalanche survival (I_AS = 50 A, E_AS = 125 mJ)
Q_gd/Q_gs < 1	Reduces Miller plateau duration, allowing faster turn-off and lower switching loss in hard-switched topologies
PowerPAK® SO-8 thermal performance	R_thJC = 0.9 °C/W (typ.) - matches DPAK, enabling >2× power handling vs. standard SO-8 at same board area
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for green manufacturing

Applications

Synchronous Rectification	ORing
Use Scenario: Secondary-side switching in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %. Use Value: R_DS(on) = 0.00088 Ω cuts conduction loss by 65 % vs. 3 mΩ Schottky, directly increasing full-load efficiency by 0.8–1.2 %.	Use Scenario: Redundant 12 V power supply inputs in industrial PLCs with automatic failover. IC Role / Device Role / Timing Role: Back-to-back configured load switch providing reverse-current blocking and seamless switchover. Use Value: Ultra-low R_DS(on) ensures <0.5 mV forward drop at 50 A, eliminating thermal runaway risk during hot-swap events.
High-Power-Density DC/DC	VRMs and Embedded DC/DC
Use Scenario: Point-of-load (POL) converter in GPU power delivery with 300 A+ output current. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) high-side switch in multiphase buck topology operating at 500–1000 kHz. Use Value: Q_gd/Q_gs < 1 minimizes dead-time sensitivity and enables stable operation at 1 MHz with minimal shoot-through risk.	Use Scenario: Core voltage regulation for FPGA and SoC in edge computing modules with strict thermal envelope. IC Role / Device Role / Timing Role: Synchronous rectifier in compact 3-phase VRM where board space limits heatsink area. Use Value: PowerPAK® SO-8's R_thJC = 0.9 °C/W allows 100 A operation with ≤25 °C junction rise on 2-layer 2 oz Cu board, avoiding forced air cooling.

Synchronous Rectification

ORing

Use Scenario: Secondary-side switching in isolated 48 V–12 V DC/DC converters for AI accelerators and telecom servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95 %.

Use Value: R_DS(on) = 0.00088 Ω cuts conduction loss by 65 % vs. 3 mΩ Schottky, directly increasing full-load efficiency by 0.8–1.2 %.

Use Scenario: Redundant 12 V power supply inputs in industrial PLCs with automatic failover.

IC Role / Device Role / Timing Role: Back-to-back configured load switch providing reverse-current blocking and seamless switchover.

Use Value: Ultra-low R_DS(on) ensures <0.5 mV forward drop at 50 A, eliminating thermal runaway risk during hot-swap events.

High-Power-Density DC/DC

VRMs and Embedded DC/DC

Use Scenario: Point-of-load (POL) converter in GPU power delivery with 300 A+ output current.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) high-side switch in multiphase buck topology operating at 500–1000 kHz.

Use Value: Q_gd/Q_gs < 1 minimizes dead-time sensitivity and enables stable operation at 1 MHz with minimal shoot-through risk.

Use Scenario: Core voltage regulation for FPGA and SoC in edge computing modules with strict thermal envelope.

IC Role / Device Role / Timing Role: Synchronous rectifier in compact 3-phase VRM where board space limits heatsink area.

Use Value: PowerPAK® SO-8's R_thJC = 0.9 °C/W allows 100 A operation with ≤25 °C junction rise on 2-layer 2 oz Cu board, avoiding forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR630DP-T1-RE3	R_DS(on) = 0.00116 Ω (max) at V_GS = 4.5 V - 32 % higher than SiR638DP-T1-RE3; Q_g = 52 nC (V_GS = 4.5 V)	Better suited for cost-sensitive 3.3 V gate-drive systems where slightly higher R_DS(on) is acceptable	Select when gate drive voltage is limited to 3.3 V and thermal margin exceeds 10 °C
SiR650DP-T1-RE3	R_DS(on) = 0.00073 Ω (typ.) at V_GS = 10 V - 17 % lower than SiR638DP-T1-RE3; Q_g = 72 nC (V_GS = 10 V)	Optimized for 10 V gate drive in high-efficiency server VRMs where switching frequency ≤ 300 kHz	Select when system prioritizes lowest possible conduction loss over gate drive complexity and switching speed

Compared with SiR630DP-T1-RE3, SiR638DP-T1-RE3 offers significantly lower R_DS(on) for improved efficiency at high current, while compared with SiR650DP-T1-RE3, it trades marginal R_DS(on) increase for reduced Q_g and better 4.5 V drive compatibility-making it optimal for mid-frequency, mixed-voltage gate-drive environments.

Availability

SiR638DP-T1-RE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, ORing, and VRM load switch applications requiring stable component supply across automotive ADAS ECUs, AI server power supplies, and industrial embedded controllers.

Supply support for SiR638DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR638DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-efficiency DC/DC conversion in space-constrained server, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SiR638DP-T1-RE3 at 70 °C case temperature?

SiR638DP-T1-RE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from its 25 °C rating due to the PowerPAK® SO-8's low R_thJC = 0.9 °C/W, enabling sustained high-current operation without thermal derating in adequately heatsunk layouts.

Does SiR638DP-T1-RE3 support 4.5 V gate drive in high-frequency synchronous rectification?

Yes, SiR638DP-T1-RE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 0.00116 Ω (max) at V_GS = 4.5 V and I_D = 15 A, and Q_g = 63 nC (typ.) under those conditions. Its low threshold voltage (V_GS(th) = 1.1–2.3 V) and Q_gd/Q_gs < 1 ensure clean turn-on and fast switching in 500–1000 kHz synchronous rectifiers using standard logic-level gate drivers.

How does the PowerPAK® SO-8 package of SiR638DP-T1-RE3 compare thermally to a standard SO-8?

SiR638DP-T1-RE3's PowerPAK® SO-8 achieves R_thJC = 0.9 °C/W (typ.), matching DPAK performance and offering ~15× lower junction-to-case thermal resistance than a standard SO-8 (R_thJC ≈ 16 °C/W). This allows SiR638DP-T1-RE3 to dissipate up to 104 W at T_C = 25 °C-versus ~6.25 W for a standard SO-8-without exceeding T_J(max) = 150 °C.

Is SiR638DP-T1-RE3 suitable for avalanche-rated applications like motor drive freewheeling?

Yes, SiR638DP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested with single-pulse avalanche ratings of I_AS = 50 A and E_AS = 125 mJ. These values are validated per JEDEC JESD24-1 and support use in inductive load switching, such as H-bridge freewheeling paths, provided layout minimizes stray inductance and peak V_DS remains within 40 V rating.

What is the body diode reverse recovery charge (Q_rr) of SiR638DP-T1-RE3, and why does it matter in synchronous rectification?

SiR638DP-T1-RE3 has Q_rr = 85–170 nC (typ.–max) at I_F = 20 A, dI/dt = 100 A/μs, and T_J = 25 °C. In synchronous rectification, low Q_rr reduces reverse-recovery current spikes and associated switching loss, especially during light-load discontinuous conduction mode (DCM), directly improving light-load efficiency and reducing EMI.

SIR638DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 204 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 10500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR638DP-T1-RE3 FAQ

1.How can I place an order for SIR638DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR638DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR638DP-T1-RE3 reliable?

The price and inventory of SIR638DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR638DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR638DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR638DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR638DP-T1-RE3?

SIR638DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR638DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR638DP-T1-RE3?

For technical support, including SIR638DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR638DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR638DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR638DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR638DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR638DP-T1-RE3?

All SIR638DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR638DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR638DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR638DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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