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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR640DP-T1-GE3

Name: SIR640DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR640DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR640DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR640DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SIR640DP-T1-GE3 from Vishay Siliconix is a 60 V, 19.5 mΩ (at V_GS = 10 V), N-channel TrenchFET® power MOSFET in PowerPAK® SO-8 package, designed for high-efficiency DC-DC conversion and load switching in server VRMs and telecom POL converters.

For engineers reviewing the SIR640DP-T1-GE3 datasheet, SIR640DP-T1-GE3 pinout, SIR640DP-T1-GE3 application, or SIR640DP-T1-GE3 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, Q_g, thermal resistance (R_θJA), and SO-8 dual-pad layout compatibility with high-current PCB routing.

Technical Context

This device uses Vishay's TrenchFET Gen IV process to achieve low gate charge (Q_g = 27 nC) and low output charge (Q_oss = 42 nC), enabling fast switching with reduced drive loss in synchronous buck topologies. Its dual-source pad configuration supports high pulsed current handling up to 100 A.

The SIR640DP-T1-GE3 features enhanced body diode ruggedness (UIS rating = 120 mJ) and 100 % UIL tested, making it suitable for hard-switched applications where reverse recovery stress occurs during freewheeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage for 48 V input systems with margin
R_DS(on) @ V_GS = 10 V	19.5 mΩ - enables <1.2 W conduction loss at 8 A continuous drain current
R_DS(on) @ V_GS = 4.5 V	29 mΩ - supports efficient operation with 5 V gate drive in logic-level designs
Q_g	27 nC - reduces gate driver power requirement and switching transition time
R_θJA	50 °C/W - measured on 1-in² 2-oz copper pad; enables 2.5 W dissipation at ΔT = 125 °C
I_D (continuous)	60 A - rated at T_C = 100 °C, supporting high-current POL stages without derating

Pinout & Package

Package: PowerPAK® SO-8 (dual-source pad variant), surface-mount, thermally enhanced with exposed drain paddle on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals tied to internal die source metallization; low-inductance return path for high di/dt
5, 6, 7, 8	Drain	Four parallel drain terminals connected to exposed bottom paddle; primary heat path to PCB
G (Pin 3 only)	Gate	Single gate input terminal; isolated from source pins by internal routing; requires <10 Ω series resistance for oscillation suppression

Key Features

Feature	Design Value
TrenchFET Gen IV silicon	Delivers 29 mΩ R_DS(on) at 4.5 V, enabling direct logic-level drive without level-shifting
PowerPAK® SO-8 dual-pad construction	Reduces R_θJA by 35 % vs. standard SO-8, improving thermal headroom in dense layouts
100 % UIS tested	Guarantees robustness against inductive switching stress without external snubbers
Low Q_oss (42 nC)	Minimizes turn-off energy loss in high-frequency (>500 kHz) synchronous rectification

Applications

Server VRM High-Side Switch	Telecom POL Converter
Use Scenario: Primary switch in 48 V-to-12 V intermediate bus converter delivering up to 120 A per phase. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by multiphase PWM controller (e.g., ISL68224). Use Value: 19.5 mΩ R_DS(on) at 10 V and 27 nC Q_g reduce conduction + switching losses, enabling >95 % peak efficiency at 500 kHz.	Use Scenario: Point-of-load step-down stage powering ASICs/FPGAs in 5G baseband units with dynamic load steps. IC Role / Device Role / Timing Role: Low-side synchronous FET in two-phase interleaved buck with 1 MHz switching frequency. Use Value: 29 mΩ R_DS(on) at 4.5 V ensures stable regulation under 5 V gate drive; 120 mJ UIS rating withstands transient reverse recovery stress.
Industrial Motor Drive Gate Driver Stage	Automotive ADAS Power Supply
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor control module operating at ambient up to 105 °C. IC Role / Device Role / Timing Role: Power switch driven by isolated gate driver (e.g., Si823Hx) with bootstrap supply. Use Value: Dual-pad thermal design sustains 60 A continuous current at T_C = 100 °C; 60 V V_DS provides margin over 24 V nominal with load dump transients.	Use Scenario: Compact 12 V-to-3.3 V/5 V power rail for radar sensor SoCs in parking assist systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter. Use Value: Low Q_oss (42 nC) and fast body diode recovery minimize cross-conduction loss during zero-voltage switching transitions.

Server VRM High-Side Switch

Telecom POL Converter

Use Scenario: Primary switch in 48 V-to-12 V intermediate bus converter delivering up to 120 A per phase.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by multiphase PWM controller (e.g., ISL68224).

Use Value: 19.5 mΩ R_DS(on) at 10 V and 27 nC Q_g reduce conduction + switching losses, enabling >95 % peak efficiency at 500 kHz.

Use Scenario: Point-of-load step-down stage powering ASICs/FPGAs in 5G baseband units with dynamic load steps.

IC Role / Device Role / Timing Role: Low-side synchronous FET in two-phase interleaved buck with 1 MHz switching frequency.

Use Value: 29 mΩ R_DS(on) at 4.5 V ensures stable regulation under 5 V gate drive; 120 mJ UIS rating withstands transient reverse recovery stress.

Industrial Motor Drive Gate Driver Stage

Automotive ADAS Power Supply

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor control module operating at ambient up to 105 °C.

IC Role / Device Role / Timing Role: Power switch driven by isolated gate driver (e.g., Si823Hx) with bootstrap supply.

Use Value: Dual-pad thermal design sustains 60 A continuous current at T_C = 100 °C; 60 V V_DS provides margin over 24 V nominal with load dump transients.

Use Scenario: Compact 12 V-to-3.3 V/5 V power rail for radar sensor SoCs in parking assist systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter.

Use Value: Low Q_oss (42 nC) and fast body diode recovery minimize cross-conduction loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 22 mΩ @ 10 V; Q_g = 31 nC; same PowerSO-8 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >10 A	Acceptable for lower-frequency (<300 kHz), lower-current (<50 A) designs where thermal margin exists
SI7862DP-T1-GE3	R_DS(on) = 21 mΩ @ 10 V; Q_g = 25 nC; identical PowerPAK® SO-8 footprint	Lower Q_g improves switching efficiency but 60 V rating unchanged; no UIS rating specified	Preferred where gate drive loss dominates, but not recommended for hard-switched inductive loads without additional protection

Compared with IRF6642TRPBF and SI7862DP-T1-GE3, the SIR640DP-T1-GE3 offers the best balance of low R_DS(on), moderate Q_g, and guaranteed UIS ruggedness-critical for unclamped inductive switching in server and telecom power stages.

Availability

SIR640DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for SIR640DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and thermal efficiency.

The SIR640DP-T1-GE3 belongs to Vishay's TrenchFET Gen IV power MOSFET family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SIR640DP-T1-GE3?

The SIR640DP-T1-GE3 is rated for 60 A continuous drain current at case temperature T_C = 100 °C, verified under JEDEC JESD51-2 test conditions using a 1-in² 2-oz copper pad. At T_C = 25 °C, the absolute maximum is 100 A, but practical design limits are governed by thermal management and PCB layout. The SIR640DP-T1-GE3 must be mounted on a thermally optimized board to sustain rated current.

Does SIR640DP-T1-GE3 support 5 V gate drive in logic-level applications?

Yes, the SIR640DP-T1-GE3 delivers 29 mΩ R_DS(on) at V_GS = 4.5 V, making it fully compatible with 5 V logic-level gate drivers without requiring level shifters. Its threshold voltage (V_GS(th)) ranges from 1.2 V to 2.4 V, ensuring strong enhancement-mode turn-on. The SIR640DP-T1-GE3 maintains stable switching behavior down to 4.5 V, unlike older MOSFET generations that require ≥10 V for full enhancement.

What is the thermal resistance R_θJA of SIR640DP-T1-GE3, and how is it measured?

The SIR640DP-T1-GE3 has a typical R_θJA of 50 °C/W when mounted on a standard JEDEC 2S2P test board (1-in² 2-oz copper). This value reflects junction-to-ambient conduction through the PowerPAK® SO-8 dual-pad structure and PCB copper. The SIR640DP-T1-GE3 achieves this via its exposed drain paddle and four parallel drain pins, which significantly improve heat transfer versus conventional SO-8 packages.

Is SIR640DP-T1-GE3 suitable for synchronous rectification in high-frequency converters?

Yes, the SIR640DP-T1-GE3 is optimized for synchronous rectification in converters operating up to 1 MHz, thanks to its low Q_g (27 nC) and Q_oss (42 nC), which minimize switching losses and improve light-load efficiency. Its fast body diode recovery (t_rr ≈ 45 ns) and 100 % UIS-tested ruggedness make the SIR640DP-T1-GE3 especially effective in hard-switched and ZVS topologies.

What is the avalanche energy rating (UIS) for SIR640DP-T1-GE3?

The SIR640DP-T1-GE3 is 100 % tested to a single-pulse unclamped inductive switching (UIS) energy level of 120 mJ at T_J = 25 °C, per JEDEC JESD24-11. This rating confirms its ability to withstand transient inductive kickback without failure-critical in motor drive and POL applications where freewheeling diode recovery stresses occur. The SIR640DP-T1-GE3 includes no derating for temperature in its UIS spec sheet value.

SIR640DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 113 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4930 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR640DP-T1-GE3 FAQ

1.How can I place an order for SIR640DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR640DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR640DP-T1-GE3 reliable?

The price and inventory of SIR640DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR640DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR640DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR640DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR640DP-T1-GE3?

SIR640DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR640DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR640DP-T1-GE3?

For technical support, including SIR640DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR640DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR640DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR640DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR640DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR640DP-T1-GE3?

All SIR640DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR640DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR640DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR640DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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