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Vishay Siliconix SIR642DP-T1-GE3
- Part No.:
- SIR642DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR642DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,728
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Product details
Overview
SIR642DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 30 A continuous drain current at TC = 25 °C, RDS(on) of 7.9 mΩ at VGS = 10 V, and 10 mΩ at VGS = 4.5 V, optimized for high-side switching in server VRM and POL DC/DC converters.
For engineers reviewing the SIR642DP-T1-GE3 datasheet, SIR642DP-T1-GE3 pinout, SIR642DP-T1-GE3 application, or SIR642DP-T1-GE3 equivalent, key selection criteria include its 30-V VDS rating, low gate charge (8.8 nC at 4.5 V), 100 % UIS-tested ruggedness, halogen-free construction per IEC 61249-2-21, and thermal performance matching DPAK via PowerPAK SO-8 footprint compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) with fast switching dynamics, supported by 20–30 nC total gate charge and sub-40 ns turn-off delay under 10-V drive. Its body diode exhibits 21–42 ns reverse recovery time and 15–30 nC Qrr, enabling efficient synchronous rectification in buck converters.
The device operates within -55 °C to +150 °C junction temperature range, features ±20 V gate-source voltage rating, and is characterized for stable on-resistance over temperature-0.0079 Ω at 25 °C rising to ~0.015 Ω at 125 °C-enabling predictable conduction loss modeling in high-power-density VRM designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operation in 12 V input bus and 5/3.3 V output POL stages. |
| RDS(on) | 7.9 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 30 A, critical for high-efficiency server power delivery. |
| ID (Cont.) | 30 A @ TC = 25 °C - Package-limited current; supports high-current phases without external heatsink in compact layouts. |
| Qg | 8.8 nC @ VGS = 4.5 V - Low gate charge reduces driver power and enables efficient 500 kHz+ switching in multiphase VRMs. |
| RthJC | 2.4 °C/W (typ.) - Junction-to-case thermal resistance matches DPAK; allows direct thermal pad coupling to PCB copper for >26 W dissipation. |
| UIS Rating | 100 % tested - Ensures robustness against inductive load transients in hot-swap and load-dump scenarios. |
| Package | PowerPAK SO-8 - Leadless, SO-8 footprint-compatible package with exposed drain pad for low-inductance, high-current routing and superior thermal transfer. |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with 8 terminals arranged in standard SO-8 footprint (6.15 mm × 5.15 mm), featuring an exposed bottom-side drain pad for thermal and electrical connection. Pin numbering follows JEDEC MS-012 standard with pins 1–4 on left side and 5–8 on right side when viewed from top.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain (D) | High-current output node; electrically and thermally connected to large bottom-side copper pad for low RDS(on) and thermal path to PCB. |
| 4 | Gate (G) | Control input; requires <10 V drive for full enhancement; low 0.2–2.0 Ω gate resistance minimizes ringing. |
| 5, 6, 7 | Source (S) | Return path for channel current; tied to power ground plane; forms Kelvin sense path for accurate current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 7.9 mΩ RDS(on) in SO-8 footprint-~40 % lower than conventional SO-8 MOSFETs at same voltage class. |
| 100 % UIS tested | Guarantees survivability under unclamped inductive switching stress up to 31 A avalanche current and 48 mJ energy. |
| Halogen-free construction | Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising dielectric or thermal performance. |
| PowerPAK SO-8 package | Delivers DPAK-level thermal resistance (2.4 °C/W) in SO-8 outline-enables drop-in upgrade of legacy SO-8 designs with no layout change. |
| Low Qgd/Qgs ratio | Qgd = 2.2 nC, Qgs = 3.5 nC → ratio ~0.63; improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk. |
Applications
| Server VRM Phase Legs | Point-of-Load Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V bus in data center servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–1000 kHz with precise gate timing control. Use Value: 7.9 mΩ RDS(on) and 8.8 nC Qg reduce conduction and switching losses, enabling >95 % efficiency at 30 A per phase while maintaining thermal headroom. | Use Scenario: Compact 3.3 V or 5 V DC/DC regulator powering FPGA I/O banks or ASIC peripherals on embedded compute modules. IC Role / Device Role / Timing Role: Primary high-side switch in integrated power stage, driven by controller IC with 4.5 V logic-level gate signal. Use Value: 10 mΩ RDS(on) at 4.5 V ensures full enhancement with standard PWM controllers, eliminating need for level-shifting or bootstrap circuits. |
| Hot-Swap Controllers | Industrial DC Power Distribution |
Use Scenario: Inrush current limiting and fault protection in 24–48 V backplane systems where board insertion must not disrupt upstream supply. IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller IC to ramp voltage linearly during insertion. Use Value: 100 % UIS testing and 31 A avalanche current rating ensure reliable operation during sustained overcurrent and short-circuit events. | Use Scenario: High-reliability 24 V DC distribution in factory automation PLCs, where MOSFETs switch motor drives or solenoid loads. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in high-cycle-count load switching applications. Use Value: Robust 30 V VDS rating and -55 °C to +150 °C operating range support wide ambient conditions and long service life without contact wear. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR462DP-T1-GE3 | Identical die and package; same Vishay part number variant with identical electrical specs and thermal performance. | No functional difference; both qualified for high-reliability server and industrial use. | Select based on distributor availability and tape-and-reel packaging preference. |
| IRF7470PBF | Higher RDS(on) (11.5 mΩ @ 10 V), higher Qg (22 nC), SO-8 (not PowerPAK); 30 V, 30 A rating but inferior thermal resistance (RthJC = 3.5 °C/W). | Limited to lower-frequency (<300 kHz), lower-current applications due to higher losses and thermal impedance. | Use only if PowerPAK SO-8 footprint is unavailable; expect ~25 % higher conduction loss and reduced thermal margin. |
Compared with SiR462DP-T1-GE3, the SiR462DP-T1-GE3 offers identical performance and qualification, while IRF7470PBF trades lower cost for significantly higher RDS(on), gate charge, and thermal resistance-making it unsuitable for high-efficiency, high-frequency VRM designs where SIR642DP-T1-GE3's 7.9 mΩ and 2.4 °C/W deliver measurable system-level efficiency and thermal advantage.
Availability
SIR642DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM design, point-of-load DC/DC conversion, and industrial hot-swap power distribution requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SIR642DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR642DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK SO-8 product line, engineered specifically for high-current, high-frequency power conversion in space-constrained computing and industrial systems where thermal density and switching loss are critical.
FAQ
What is the maximum continuous drain current rating for SIR642DP-T1-GE3 at 70 °C case temperature?
The SIR642DP-T1-GE3 supports 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area on the drain pad to maintain case temperature at or below 70 °C under steady-state operation.
Does SIR642DP-T1-GE3 require a gate driver with negative voltage capability?
No, SIR642DP-T1-GE3 does not require negative gate drive. Its gate threshold voltage is 1–3 V and maximum rated VGS is ±20 V, making it fully compatible with standard 0–5 V or 0–10 V gate drivers. The device turns off completely at VGS = 0 V, and no negative bias is needed for reliable operation in synchronous buck or hot-swap configurations.
Is SIR642DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIR642DP-T1-GE3 uses the PowerPAK SO-8 package, which maintains identical pin count, pin spacing (1.27 mm pitch), and outline dimensions (6.15 mm × 5.15 mm) as standard SO-8. Pin 1 (Drain) through pin 4 (Gate) and pin 5–8 (Source/Drain) align directly-enabling drop-in replacement without PCB redesign, though optimal thermal performance requires matching the drain pad land pattern.
What is the typical body diode forward voltage of SIR642DP-T1-GE3 at 4 A source current?
The typical body diode forward voltage (VSD) of SIR642DP-T1-GE3 is 0.8–1.2 V at IS = 4.0 A and VGS = 0 V, measured at TJ = 25 °C. This low VSD supports efficient reverse conduction during dead-time intervals in synchronous rectification, reducing crossover losses compared to discrete Schottky solutions.
How is the 100 % UIS test performed on SIR642DP-T1-GE3?
The 100 % UIS (Unclamped Inductive Switching) test subjects each SIR642DP-T1-GE3 unit to a controlled inductive energy pulse (L = 0.1 mH) at rated current (31 A) and junction temperature, verifying avalanche capability up to 48 mJ. This production test ensures every device can safely absorb transient inductive energy without degradation-critical for reliability in VRM and hot-swap applications.
SIR642DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4155 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 41.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR642DP-T1-GE3 FAQ
1.How can I place an order for SIR642DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR642DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR642DP-T1-GE3 reliable?
The price and inventory of SIR642DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR642DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR642DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR642DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR642DP-T1-GE3?
SIR642DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR642DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR642DP-T1-GE3?
For technical support, including SIR642DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR642DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR642DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR642DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR642DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR642DP-T1-GE3?
All SIR642DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR642DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR642DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR642DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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