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Vishay Siliconix SIR644DP-T1-GE3
- Part No.:
- SIR644DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR644DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,481
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Product details
Overview
SIR644DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 2.7 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V, optimized for synchronous rectification in high-efficiency DC/DC converters.
For engineers reviewing the SIR644DP-T1-GE3 datasheet, SIR644DP-T1-GE3 pinout, SIR644DP-T1-GE3 application, or SIR644DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 21.3 nC total gate charge, 1.2 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 21.3 nC at VGS = 4.5 V) and low output capacitance (Coss = 2460 pF) support high-frequency operation in synchronous buck topologies up to 1 MHz.
The device integrates a robust body diode with trr = 54 ns and Qrr = 59 nC, enabling efficient reverse recovery in hard-switched and resonant converter stages. Its 100 % Rg and UIS tested construction ensures reliability under repetitive avalanche stress in power supply protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V and 24 V input DC/DC systems |
| RDS(on) @ VGS = 10 V | 2.7 mΩ - Enables <1.1 W conduction loss at 20 A, critical for high-current POL regulators |
| RDS(on) @ VGS = 4.5 V | 4.0 mΩ - Supports logic-level gate drive from modern PWM controllers without level-shifting |
| Qg | 21.3 nC - Low gate charge reduces driver power loss and enables faster turn-on in high-frequency designs |
| ID (continuous, TC = 25 °C) | 60 A - Sustains full-load current in server VRMs and telecom power modules |
| RthJC | 1.2 °C/W - Enables direct thermal coupling to heatsink or copper pour, matching DPAK thermal capability |
| trr | 54 ns - Minimizes body diode switching loss and EMI in synchronous rectifier applications |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed drain pad on bottom side, identical 5.15 mm × 6.15 mm footprint and pinout to standard SO-8, enabling drop-in replacement without PCB redesign. The package features low-profile height (1.04 mm nominal) and optimized thermal path from die to PCB via the large drain paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires <1.2 Ω gate resistance to limit ringing and ensure stable 10 V/4.5 V switching |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground plane in synchronous rectifier layout |
| 3 (S) | Source | Second source connection to reduce source inductance and improve current sharing in high-di/dt operation |
| 4 (S) | Source | Third source connection enhancing low-inductance return path for 60 A conduction |
| 5 (D) | Drain | Main power terminal; connected to large copper area for thermal dissipation and low-impedance high-side switching path |
| 6 (D) | Drain | Second drain terminal increasing current capacity and reducing package resistance |
| 7 (D) | Drain | Third drain terminal supporting parallel routing and minimizing voltage drop across package |
| 8 (D) | Drain | Fourth drain terminal completing low-resistance, low-inductance drain network for high-efficiency operation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 2.7 mΩ RDS(on) in SO-8 footprint-enabling >95 % efficiency in 48 V–12 V buck converters at 40 A |
| 100 % Rg and UIS tested | Guarantees gate robustness and single-pulse avalanche energy rating of 61 mJ for overvoltage transient resilience |
| PowerPAK® SO-8 package | Provides 1.2 °C/W RthJC, matching DPAK thermal performance while retaining SO-8 board space and assembly compatibility |
| Lead (Pb)-free and Halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant industrial and telecom systems |
| Low Qgd/Qg ratio | 12 nC / 21.3 nC = 0.56 - Reduces Miller effect, improving noise immunity and enabling stable operation with high dV/dt |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom DC/DC Brick Converters |
|---|---|
Use Scenario: High-current point-of-load regulation in dual-processor servers requiring 40–60 A per phase at 0.8–1.2 V output. IC Role / Device Role: Synchronous rectifier switch in multiphase buck converter, replacing Schottky diodes to reduce conduction loss. Use Value: 2.7 mΩ RDS(on) cuts synchronous rectifier loss by >60 % vs. typical 6.5 mΩ alternatives, directly improving VRM efficiency by 1.2–1.8 % at full load. |
Use Scenario: Isolated 48 V to 12 V intermediate bus conversion in 1RU telecom equipment with strict thermal and footprint constraints. IC Role / Device Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology operating at 200–500 kHz. Use Value: 4.0 mΩ RDS(on) at 4.5 V gate drive allows direct interface with UC384x-family controllers, eliminating gate driver ICs and saving 3 mm² board area per phase. |
| Industrial Motor Drive Inverters | Renewable Energy DC/AC Microinverters |
Use Scenario: Half-bridge leg in 24 V BLDC motor control for factory automation, requiring bidirectional current handling and fast freewheeling. IC Role / Device Role: Low-side switch with integrated body diode used for PWM-controlled current recirculation during off-time. Use Value: 54 ns trr and 59 nC Qrr minimize switching loss and voltage overshoot during diode commutation, reducing heatsink size by 35 % vs. discrete diode solutions. |
Use Scenario: High-efficiency 250–300 W microinverter converting PV panel DC output to grid-synchronized 230 V AC. IC Role / Device Role: Synchronous rectifier in interleaved boost stage, operating with 100 kHz switching and 15 A peak current. Use Value: 21.3 nC Qg enables <20 ns turn-on delay with standard gate drivers, maintaining >98.3 % peak efficiency across 10–100 % load range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR630DP-T1-GE3 | RDS(on) = 3.2 mΩ @ 10 V; Qg = 18.5 nC; same PowerPAK SO-8 package | Lower gate charge improves high-frequency efficiency but higher RDS(on) increases conduction loss above 35 A | Select for >500 kHz designs where switching loss dominates; avoid for >45 A continuous current applications |
| IRF6642TRPBF | RDS(on) = 2.6 mΩ @ 10 V; Qg = 24.5 nC; PQFN 5×6 mm package with different pinout | Higher gate charge increases driver loss; non-SO-8 footprint requires PCB redesign | Consider only when thermal budget allows 24.5 nC Qg penalty and layout supports PQFN land pattern |
Compared with SiR630DP-T1-GE3, SIR644DP-T1-GE3 offers lower conduction loss at high current but slightly higher switching loss; versus IRF6642TRPBF, it provides SO-8 compatibility and better gate drive margin at 4.5 V, making it preferable for cost-sensitive, high-volume telecom and server power supplies.
Availability
SIR644DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC bricks, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for SIR644DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR644DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 product line, engineered for high-current, high-efficiency power conversion in space-constrained computing, telecom, and industrial systems.
FAQ
What is the maximum continuous drain current rating for SIR644DP-T1-GE3 at 70 °C case temperature?
The SIR644DP-T1-GE3 is rated for 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 60 A value at 25 °C case temperature and is validated under steady-state thermal conditions with proper PCB copper area and airflow. The SIR644DP-T1-GE3 maintains this current capability due to its 1.2 °C/W junction-to-case thermal resistance and low RDS(on).
Does SIR644DP-T1-GE3 support 4.5 V gate drive for full enhancement in synchronous rectifier applications?
Yes, the SIR644DP-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) = 4.0 mΩ max at ID = 15 A. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.2 V, ensuring reliable turn-on with standard 4.5 V logic-level PWM controllers. The SIR644DP-T1-GE3 delivers predictable performance in 5 V rail-driven synchronous buck converters without requiring external level shifters.
What is the thermal resistance from junction to ambient for SIR644DP-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the SIR644DP-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 24 °C/W for t ≤ 10 s, and a typical value of 19 °C/W. These values assume surface mounting per Vishay's recommended land pattern. The SIR644DP-T1-GE3 achieves significantly lower RthJA than standard SO-8 MOSFETs due to its exposed drain paddle and optimized thermal path to the PCB.
Is SIR644DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, the SIR644DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical 5.15 mm × 6.15 mm footprint and pinout (G-S-S-S-D-D-D-D) to standard SO-8 devices. It can be mounted on existing SO-8 land patterns without modification, though optimal thermal performance requires extending the drain copper area per Vishay Application Note AN821. The SIR644DP-T1-GE3 is a direct mechanical and electrical replacement for legacy SO-8 N-channel MOSFETs.
What is the body diode reverse recovery charge (Qrr) specification for SIR644DP-T1-GE3?
The SIR644DP-T1-GE3 has a body diode reverse recovery charge (Qrr) of 59 nC typical and 120 nC maximum, measured at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. This low Qrr value minimizes switching loss and voltage spikes during freewheeling in synchronous rectifier configurations. The SIR644DP-T1-GE3's Qrr performance is integral to its use in high-frequency DC/DC converters where diode recovery dominates efficiency.
SIR644DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3200 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR644DP-T1-GE3 FAQ
1.How can I place an order for SIR644DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR644DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR644DP-T1-GE3 reliable?
The price and inventory of SIR644DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR644DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR644DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR644DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR644DP-T1-GE3?
SIR644DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR644DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR644DP-T1-GE3?
For technical support, including SIR644DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR644DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR644DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR644DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR644DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR644DP-T1-GE3?
All SIR644DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR644DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR644DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR644DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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