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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR670DP-T1-GE3

Name: SIR670DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR670DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR670DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR670DP-T1-GE3.pdf

Description:: MOSFET N-CH 60V 60A PPAK SO-8

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Product details

Overview

SIR670DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V, 60 A TrenchFET® power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 4.8 mΩ at V_GS = 10 V, Q_g = 18.5 nC (at V_GS = 4.5 V), and R_thJC = 1.8 °C/W - optimized for primary-side switching and synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SIR670DP-T1-GE3 datasheet, SIR670DP-T1-GE3 pinout, SIR670DP-T1-GE3 application, or SIR670DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, robust 25 A avalanche rating, 100 % UIS testing, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve sub-5 mΩ on-resistance at 10 V gate drive while maintaining fast switching with Q_gd = 5 nC and t_f = 7 ns (R_g = 1 Ω). Its PowerPAK® SO-8 package features exposed drain copper on the bottom side for direct board-level heat conduction, enabling R_thJA as low as 20 °C/W on 1" × 1" FR4.

The device supports gate voltages from ±20 V, exhibits V_GS(th) = 1.5–2.8 V (250 μA test current), and integrates a body diode with t_rr = 40–80 ns and Q_rr = 37–74 nC - critical for hard-switched and synchronous rectifier topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for primary-side switch in 48 V input DC/DC or boost stages
R_DS(on) @ V_GS = 10 V	4.8 mΩ - enables ≤1.9 W conduction loss at 20 A continuous drain current
Q_g @ V_GS = 4.5 V	18.5 nC - determines gate drive strength requirement for <100 ns turn-on with 1 Ω source impedance
I_D (T_C = 25 °C)	60 A - continuous current rating under heatsink-cooled conditions, limited by package thermal capacity
R_thJC	1.8 °C/W - junction-to-case thermal resistance enables efficient heat transfer to PCB copper or external heatsink
E_AS	31.2 mJ - single-pulse avalanche energy rating supports robustness during transient overvoltage events
V_SD @ I_S = 5 A	0.78–1.1 V - forward voltage of integrated body diode, relevant for synchronous rectifier dead-time conduction

Pinout & Package

Package: PowerPAK® SO-8 (leadless, same footprint as standard SO-8; 5.15 mm × 6.15 mm × 1.04 mm; exposed drain pad on bottom).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals + large bottom-exposed copper pad provide low-inductance, high-current path to PCB ground plane
G (Pin 3 top view, but electrically isolated from S pins)	Gate (G)	Single gate terminal located between source and drain rows; requires controlled 10 V drive for full enhancement

Key Features

Feature	Design Value
TrenchFET® technology	Enables 4.8 mΩ R_DS(on) at 10 V in SO-8 footprint - 3× lower on-resistance than typical SO-8 MOSFETs of same size
100 % R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche ruggedness up to 25 A / 31.2 mJ per unit
PowerPAK® SO-8 package	Delivers DPAK-equivalent R_thJC (1.8 °C/W) in SO-8 outline - eliminates need for layout change when upgrading from standard SO-8
Low Q_gd/Q_g ratio	5 nC / 18.5 nC = 0.27 - improves switching efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations
Body diode t_rr < 80 ns	Minimizes reverse recovery losses and associated voltage spikes in synchronous rectifier operation at ≥100 kHz

Applications

Primary-Side Switching	Synchronous Rectification
Use Scenario: High-frequency flyback or LLC resonant converter operating at 100–500 kHz with 36–60 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; driven by PWM controller with 10 V gate voltage. Use Value: Low R_DS(on) and fast switching minimize conduction and transition losses, enabling >94 % efficiency at full load.	Use Scenario: Secondary-side rectification in isolated DC/DC converters replacing Schottky diodes to reduce forward drop and improve light-load efficiency. IC Role / Device Role / Timing Role: Active rectifier synchronized to transformer output polarity; body diode conducts during dead time before gate turn-on. Use Value: 0.78 V V_SD and 40 ns t_rr cut conduction loss vs. 0.5 A Schottky, while Q_rr control reduces voltage overshoot during commutation.
DC/DC Converters	Boost Converters
Use Scenario: 12 V–48 V input, 3.3 V/20 A output buck converter in telecom or server power supply. IC Role / Device Role / Timing Role: High-side switch in multiphase buck stage; operated with 4.5–10 V gate drive and 500 kHz switching frequency. Use Value: R_DS(on) = 6.0 mΩ at 6 V ensures stable on-resistance across temperature, reducing thermal runaway risk in phase-interleaved designs.	Use Scenario: Automotive 12 V battery-fed boost stage stepping up to 48 V for mild-hybrid systems. IC Role / Device Role / Timing Role: Low-side switch in boost topology; subjected to repetitive 60 V drain stress and high di/dt during turn-off. Use Value: 60 V V_DS rating with 25 A I_AS provides margin against load dump transients; low C_oss = 1050 pF minimizes turn-off energy loss.

Primary-Side Switching

Synchronous Rectification

Use Scenario: High-frequency flyback or LLC resonant converter operating at 100–500 kHz with 36–60 V input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; driven by PWM controller with 10 V gate voltage.

Use Value: Low R_DS(on) and fast switching minimize conduction and transition losses, enabling >94 % efficiency at full load.

Use Scenario: Secondary-side rectification in isolated DC/DC converters replacing Schottky diodes to reduce forward drop and improve light-load efficiency.

IC Role / Device Role / Timing Role: Active rectifier synchronized to transformer output polarity; body diode conducts during dead time before gate turn-on.

Use Value: 0.78 V V_SD and 40 ns t_rr cut conduction loss vs. 0.5 A Schottky, while Q_rr control reduces voltage overshoot during commutation.

DC/DC Converters

Boost Converters

Use Scenario: 12 V–48 V input, 3.3 V/20 A output buck converter in telecom or server power supply.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck stage; operated with 4.5–10 V gate drive and 500 kHz switching frequency.

Use Value: R_DS(on) = 6.0 mΩ at 6 V ensures stable on-resistance across temperature, reducing thermal runaway risk in phase-interleaved designs.

Use Scenario: Automotive 12 V battery-fed boost stage stepping up to 48 V for mild-hybrid systems.

IC Role / Device Role / Timing Role: Low-side switch in boost topology; subjected to repetitive 60 V drain stress and high di/dt during turn-off.

Use Value: 60 V V_DS rating with 25 A I_AS provides margin against load dump transients; low C_oss = 1050 pF minimizes turn-off energy loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 16.5 nC; same PowerPAK SO-8 package	Slightly higher conduction loss but lower gate charge - better suited for very high-frequency (>1 MHz) soft-switching topologies	Select when prioritizing switching loss reduction over conduction loss at moderate currents (<15 A)
IRF7470PBF	Standard SO-8 (not leadless); R_DS(on) = 5.8 mΩ @ 10 V; R_thJC = 3.0 °C/W; no 100 % UIS test	Higher thermal resistance limits power handling; less rugged in avalanche; requires same PCB footprint but inferior thermal performance	Acceptable only for cost-sensitive, low-power (<10 W) applications where thermal headroom is ample

Compared with SiR626DP-T1-GE3, SIR670DP-T1-GE3 delivers lower conduction loss at high current, while IRF7470PBF trades thermal and ruggedness advantages for legacy SO-8 compatibility - making SIR670DP-T1-GE3 optimal for thermally constrained, high-efficiency 20–60 A DC/DC designs.

Availability

SIR670DP-T1-GE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, synchronous rectifiers, and boost converters requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SIR670DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIR670DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial and telecom applications.

FAQ

What is the maximum continuous drain current rating for SIR670DP-T1-GE3 at 70 °C case temperature?

The SIR670DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area for heat spreading and is not derated relative to the 25 °C condition - reflecting the PowerPAK® SO-8 package's superior thermal conduction capability compared to standard SO-8.

Does SIR670DP-T1-GE3 support 4.5 V gate drive for full enhancement in synchronous rectifier applications?

Yes, SIR670DP-T1-GE3 is fully characterized down to 4.5 V gate drive: R_DS(on) = 7.8 mΩ max at V_GS = 4.5 V and I_D = 10 A. Its V_GS(th) range of 1.5–2.8 V ensures reliable turn-on with standard 4.5 V logic-level gate drivers, making it suitable for self-driven synchronous rectification circuits without level-shifting.

How does the PowerPAK® SO-8 package of SIR670DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?

The SIR670DP-T1-GE3's PowerPAK® SO-8 package achieves R_thJC = 1.8 °C/W - matching DPAK performance - versus ~16 °C/W for standard SO-8. On a 1" × 1" FR4 board, this reduces junction-to-ambient thermal resistance to 20–25 °C/W, enabling ~2× higher power dissipation before reaching 150 °C junction temperature compared to conventional SO-8 equivalents.

Is SIR670DP-T1-GE3 suitable for avalanche-prone circuits such as inductive load switching?

Yes, SIR670DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested with I_AS = 25 A and E_AS = 31.2 mJ. These validated ratings confirm its ability to safely absorb inductive energy during turn-off without failure - critical for motor gate drivers, solenoid controls, and flyback snubberless designs where voltage overshoot exceeds V_DS.

What is the gate-source leakage specification for SIR670DP-T1-GE3 at maximum rated V_GS?

At V_GS = ±20 V and T_J = 25 °C, the gate-source leakage current (I_GSS) for SIR670DP-T1-GE3 is guaranteed ≤ ±100 nA. This ultra-low leakage ensures minimal gate drive current demand and stable biasing in high-impedance gate networks, supporting reliable operation in precision PWM and digital control interfaces.

SIR670DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2815 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR670DP-T1-GE3 FAQ

1.How can I place an order for SIR670DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR670DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR670DP-T1-GE3 reliable?

The price and inventory of SIR670DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR670DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR670DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR670DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR670DP-T1-GE3?

SIR670DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR670DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR670DP-T1-GE3?

For technical support, including SIR670DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR670DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR670DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR670DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR670DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR670DP-T1-GE3?

All SIR670DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR670DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR670DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR670DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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