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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR681DP-T1-RE3

Name: SIR681DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR681DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR681DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR681DP-T1-RE3.pdf

Description:: MOSFET P-CH 80V 17.6A/71.9A PPAK

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Product details

Overview

SIR681DP-T1-RE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in PowerPAK® SO-8 package, rated for -80 V V_DS, 71.9 A continuous drain current at T_C = 25 °C, and 11.2 mΩ R_DS(on) at V_GS = -10 V. It serves as a high-efficiency load switch or OR-ing FET in DC power distribution systems, especially where charge-pump-free gate drive is required.

For engineers reviewing the SIR681DP-T1-RE3 datasheet, SIR681DP-T1-RE3 pinout, SIR681DP-T1-RE3 application, or SIR681DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) at -4.5 V gate drive (16.7 mΩ), robust UIS rating (50 A single-pulse avalanche current), and leadless PowerPAK SO-8 thermal performance (R_thJC = 0.9 °C/W).

Technical Context

This device uses Vishay's TrenchFET® Gen IV process to achieve low on-resistance without requiring external charge pump circuitry - enabling direct logic-level control from -4.5 V sources. Its gate threshold voltage range (-1.4 V to -2.6 V) ensures reliable turn-on with standard microcontroller I/O while maintaining low leakage (<100 nA IGSS).

The MOSFET integrates a fast, low-loss body diode (t_rr = 50 ns typ., Q_rr = 74 nC) suitable for synchronous rectification and reverse-current blocking. Thermal design is supported by a low junction-to-case resistance (0.9 °C/W) and validated reflow soldering profile per JEDEC J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-80 V - Maximum blocking voltage for industrial and adapter input-stage protection
R_DS(on) @ V_GS = -10 V	11.2 mΩ - Enables <1 W conduction loss at 9.5 A, reducing heatsink requirements
R_DS(on) @ V_GS = -4.5 V	16.7 mΩ - Supports direct interface with 3.3 V/5 V logic without level-shifting or charge pump
Q_g typ.	31.7 nC - Low gate charge enables fast switching with modest gate driver current (e.g., <1 A peak)
I_D cont. @ T_C = 25 °C	-71.9 A - High current capability for high-power load switching in compact layouts
R_thJC	0.9 °C/W - Efficient heat transfer to PCB copper or heatsink, critical for sustained high-current operation
V_GS(th)	-1.4 V to -2.6 V - Ensures guaranteed turn-on with standard logic outputs while minimizing noise susceptibility

Pinout & Package

Package: PowerPAK® SO-8 (leadless, surface-mount, 5.15 mm × 6.15 mm footprint). Exposed drain pad on bottom provides primary thermal path and electrical connection to drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source connections reduce package inductance and improve current sharing in high-di/dt switching
4	Gate (G)	Single gate terminal with 1.3 Ω max gate resistance - optimized for EMI control and dV/dt immunity
6, 7, 8	Drain (D)	Three drain terminals tied to large exposed copper pad - delivers low R_thJC and supports >100 W power dissipation with proper PCB layout

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers 16.7 mΩ R_DS(on) at -4.5 V gate drive - eliminates need for external charge pump in battery-powered systems
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
Low Q_gd/Q_g ratio (6.9/31.7 nC)	Reduces Miller effect, enabling stable high-speed switching even with moderate gate resistance
Body diode t_rr = 50 ns	Minimizes reverse-recovery losses in OR-ing and bidirectional power-path applications
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Adapter and Charger Switch	Battery Protection Circuit
Use Scenario: High-side switching in USB PD and laptop AC/DC adapter output stages, managing hot-plug events and fault isolation. IC Role / Device Role / Timing Role: P-channel load switch controlling 20 V–48 V output rails; operates in linear mode during soft-start and saturated switch mode during normal operation. Use Value: 11.2 mΩ R_DS(on) limits voltage drop to <0.23 V at 20 A, preserving regulation margin and reducing thermal load on adapter PCB.	Use Scenario: Reverse-current blocking and overcurrent cutoff in 2- to 4-cell Li-ion battery packs used in power tools and medical portables. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current control; leverages low V_GS(th) for precise enable/disable timing via battery management IC. Use Value: 16.7 mΩ R_DS(on) at -4.5 V allows direct control from BMS GPIO, eliminating level-shifters and saving board space.
OR-ing Controller FET	Motor Drive High-Side Switch
Use Scenario: Redundant 12 V/24 V DC power supply systems in telecom and industrial PLCs, where multiple inputs feed a common bus. IC Role / Device Role / Timing Role: Passive OR-ing FET placed between each supply and shared rail; body diode conducts initially, then FET turns on to reduce forward drop. Use Value: Fast 50 ns body diode recovery and low Q_rr (74 nC) minimize cross-conduction losses during supply switchover transients.	Use Scenario: High-side switch in brushed DC motor drivers for HVAC actuators and automotive seat controls, operating from 12 V battery rails. IC Role / Device Role / Timing Role: P-channel high-side switch controlled by microcontroller PWM; handles stall currents up to 70 A with minimal thermal derating. Use Value: 71.9 A continuous rating at T_C = 25 °C and 0.9 °C/W R_thJC allow full motor stall current without external heatsink on 2 oz. copper PCB.

Adapter and Charger Switch

Battery Protection Circuit

Use Scenario: High-side switching in USB PD and laptop AC/DC adapter output stages, managing hot-plug events and fault isolation.

IC Role / Device Role / Timing Role: P-channel load switch controlling 20 V–48 V output rails; operates in linear mode during soft-start and saturated switch mode during normal operation.

Use Value: 11.2 mΩ R_DS(on) limits voltage drop to <0.23 V at 20 A, preserving regulation margin and reducing thermal load on adapter PCB.

Use Scenario: Reverse-current blocking and overcurrent cutoff in 2- to 4-cell Li-ion battery packs used in power tools and medical portables.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current control; leverages low V_GS(th) for precise enable/disable timing via battery management IC.

Use Value: 16.7 mΩ R_DS(on) at -4.5 V allows direct control from BMS GPIO, eliminating level-shifters and saving board space.

OR-ing Controller FET

Motor Drive High-Side Switch

Use Scenario: Redundant 12 V/24 V DC power supply systems in telecom and industrial PLCs, where multiple inputs feed a common bus.

IC Role / Device Role / Timing Role: Passive OR-ing FET placed between each supply and shared rail; body diode conducts initially, then FET turns on to reduce forward drop.

Use Value: Fast 50 ns body diode recovery and low Q_rr (74 nC) minimize cross-conduction losses during supply switchover transients.

Use Scenario: High-side switch in brushed DC motor drivers for HVAC actuators and automotive seat controls, operating from 12 V battery rails.

IC Role / Device Role / Timing Role: P-channel high-side switch controlled by microcontroller PWM; handles stall currents up to 70 A with minimal thermal derating.

Use Value: 71.9 A continuous rating at T_C = 25 °C and 0.9 °C/W R_thJC allow full motor stall current without external heatsink on 2 oz. copper PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 14.5 mΩ @ -10 V; larger SO-8 package (6.2 × 5.0 mm vs. 6.15 × 5.15 mm); no 100 % UIS test	Higher R_DS(on) increases conduction loss by ~30 % at same current; less rugged under inductive switching	Choose IRF7470PBF only if legacy SO-8 footprint compatibility is mandatory and UIS stress is absent
DMT6009LSD-13	R_DS(on) = 9.0 mΩ @ -10 V but 20.5 mΩ @ -4.5 V; different pinout (G/S/D/S/D/S/G/D); higher Q_g (42 nC)	Less suitable for -4.5 V drive; gate drive energy 33 % higher; incompatible pin mapping requires PCB redesign	Select DMT6009LSD-13 only when lowest possible R_DS(on) at -10 V is critical and gate drive voltage ≥ -10 V is available

Compared with IRF7470PBF and DMT6009LSD-13, the SIR681DP-T1-RE3 uniquely balances low -4.5 V R_DS(on), industry-leading UIS ruggedness, and PowerPAK SO-8 thermal efficiency - making it optimal for space-constrained, logic-driven load switching where reliability under transient stress is non-negotiable.

Availability

SIR681DP-T1-RE3 is available at Aetrix Electronics and suitable for adapter and charger switch, battery protection circuit, and OR-ing applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and medical end equipment.

Supply support for SIR681DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across automotive, industrial, and computing markets.

The SIR681DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET product line, engineered specifically for high-current, low-voltage-drop load switching in space-constrained power systems where gate-drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIR681DP-T1-RE3 at case temperature of 70 °C?

The SIR681DP-T1-RE3 supports -57.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be verified against actual PCB copper area and airflow conditions in the target application.

Does SIR681DP-T1-RE3 require a charge pump for gate drive at -4.5 V?

No, the SIR681DP-T1-RE3 does not require a charge pump for gate drive at -4.5 V. Its V_GS(th) range (-1.4 V to -2.6 V) and low R_DS(on) of 16.7 mΩ at V_GS = -4.5 V enable full enhancement directly from standard logic-level sources - a core feature highlighted in Vishay's TrenchFET® Gen IV design.

What is the thermal resistance from junction to ambient for SIR681DP-T1-RE3 under typical PCB mounting?

The SIR681DP-T1-RE3 has a maximum R_thJA of 20 °C/W under standard 1" × 1" FR4 board mounting (t ≤ 10 s pulse). For steady-state design, junction-to-case resistance is 0.9 °C/W, meaning thermal performance depends heavily on PCB copper area and heatsinking applied to the exposed drain pad - not ambient convection alone.

Is SIR681DP-T1-RE3 suitable for use in OR-ing applications with fast supply switchover?

Yes, the SIR681DP-T1-RE3 is well-suited for OR-ing applications with fast switchover due to its fast body diode (t_rr = 50 ns typ., Q_rr = 74 nC) and low R_DS(on). These characteristics minimize reverse-recovery losses and voltage overshoot during transitions between redundant supplies, as confirmed in Vishay's Application Note AN826 and typical characteristics data.

What packaging and compliance standards apply to SIR681DP-T1-RE3?

The SIR681DP-T1-RE3 is supplied in tape-and-reel format (T1-RE3 suffix) and is lead (Pb)-free and halogen-free per Vishay's Green Standard (Doc. #99912) and RoHS Directive 2011/65/EU. The PowerPAK SO-8 package complies with JEDEC MO-229 and IPC-7351B land pattern recommendations.

SIR681DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 17.6A (Ta), 71.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 11.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4850 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR681DP-T1-RE3 FAQ

1.How can I place an order for SIR681DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR681DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR681DP-T1-RE3 reliable?

The price and inventory of SIR681DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR681DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR681DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR681DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR681DP-T1-RE3?

SIR681DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR681DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR681DP-T1-RE3?

For technical support, including SIR681DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR681DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR681DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR681DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR681DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR681DP-T1-RE3?

All SIR681DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR681DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR681DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR681DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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