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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR690DP-T1-RE3

Name: SIR690DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR690DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR690DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR690DP-T1-RE3.pdf

Description:: MOSFET N-CH 200V 34.4A PPAK SO-8

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Product details

Overview

SIR690DP-T1-RE3 from Vishay Siliconix is an N-channel 200 V, 34.4 A (T_C = 25 °C) PowerPAK® SO-8 MOSFET with R_DS(on) = 0.035 Ω @ V_GS = 10 V, Q_g = 31.9 nC typ., and optimized ThunderFET® technology for DC/DC converters and primary-side switching in industrial power supplies.

For engineers reviewing the SIR690DP-T1-RE3 datasheet, SIR690DP-T1-RE3 pinout, SIR690DP-T1-RE3 application, or SIR690DP-T1-RE3 equivalent, this device delivers high-current switching capability in a leadless SO-8 footprint with DPAK-level thermal performance (R_thJC = 0.9 °C/W typ.), low gate charge, and 100 % UIS-tested ruggedness - critical for reliable high-efficiency power conversion design.

Technical Context

This N-channel enhancement-mode MOSFET uses trench-gate silicon technology with ThunderFET® optimization to balance R_DS(on), Q_g, Q_sw, and Q_oss. It features a 200 V V_DS rating, ±20 V V_GS range, and 150 °C maximum junction temperature.

The device integrates a robust body diode (V_SD = 0.78 V @ I_S = 5 A, t_rr = 152 ns typ.) and is 100 % R_g and UIS tested per JEDEC JESD22-A114. Its PowerPAK SO-8 package provides exposed drain copper on the bottom side for low R_thJC and enhanced thermal conduction to PCB copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands up to 200 V drain-source blocking voltage under steady-state operation.
R_DS(on) max @ V_GS = 10 V	0.035 Ω - Enables low conduction loss at full-rated current (34.4 A at T_C = 25 °C).
Q_g typ.	31.9 nC - Reduces gate drive power and switching losses in high-frequency applications (e.g., >100 kHz DC/DC).
I_D continuous @ T_C = 25 °C	34.4 A - Supports high-current primary-side switching without external heatsink when properly mounted.
R_thJC max	1.2 °C/W - Delivers DPAK-equivalent thermal resistance for efficient heat transfer from junction to PCB copper.
E_AS	45 mJ - Confirms avalanche energy handling capability for transient overvoltage protection in hard-switched topologies.
V_GS(th)	2–4 V - Ensures clean turn-on with standard 5 V or 10 V gate drivers and avoids unintended conduction near 0 V.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, single-channel), 5.15 mm × 6.15 mm footprint, 1.04 mm nominal height, exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with R_g = 0.5–2.4 Ω - compatible with standard gate drivers and supports fast, controlled turn-on/turn-off.
6, 7, 8	Drain (D)	Three drain terminals connected to large bottom-side copper pad - forms primary thermal path to PCB and handles high pulsed currents (I_DM = 80 A).

Key Features

Feature	Design Value
ThunderFET® technology	Optimized trade-off between R_DS(on), Q_g, Q_sw, and Q_oss - enables high efficiency across 100 kHz–1 MHz switching frequencies.
100 % R_g and UIS tested	Guarantees gate robustness and single-pulse avalanche reliability - eliminates field failure risk in unclamped inductive switching.
PowerPAK SO-8 package	Same footprint as standard SO-8 but with DPAK-level R_thJC (0.9 °C/W typ.) - allows drop-in upgrade of legacy designs without layout change.
Lead (Pb)-free, halogen-free, BLR, IOL	Complies with RoHS, REACH, and Vishay's "Branded Lead-Free Reliability" (BLR) and "Industry-Optimized Lead-Free" (IOL) programs - ensures long-term supply stability and process compatibility.

Applications

DC/DC Converters	Primary-Side Switching
Use Scenario: High-efficiency isolated flyback or forward converter in telecom and server power supplies operating at 100–500 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer from input to transformer. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >94 % efficiency at 24 V input, 48 V output, 10 A load.	Use Scenario: Main switching FET in LLC resonant half-bridge primary stage for industrial AC/DC front-end modules. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch synchronized to resonant tank zero-voltage switching (ZVS) transitions. Use Value: 45 mJ E_AS and 30 A I_AS ensure safe operation during ZVS boundary conditions and line transients.
Synchronous Rectification	Battery Protection
Use Scenario: Secondary-side synchronous rectifier in high-current 12 V/20 A laptop adapter or USB PD 3.0 charger. IC Role / Device Role / Timing Role: Low-V_DS freewheeling switch replacing Schottky diode to reduce forward voltage drop and heat generation. Use Value: R_DS(on) = 0.035 Ω @ 10 V enables <0.7 V effective forward drop at 20 A - cuts rectifier losses by >60 % vs. 40 V Schottky.	Use Scenario: Charge/discharge path switch in 2–4 cell Li-ion battery packs for power tools and e-bikes. IC Role / Device Role / Timing Role: Bidirectional current-blocking FET protecting against overcurrent, short-circuit, and reverse polarity. Use Value: 200 V V_DS margin accommodates surge voltages up to 150 V during hot-plug events; 60 A I_S supports high pulse discharge currents.

DC/DC Converters

Primary-Side Switching

Use Scenario: High-efficiency isolated flyback or forward converter in telecom and server power supplies operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer from input to transformer.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >94 % efficiency at 24 V input, 48 V output, 10 A load.

Use Scenario: Main switching FET in LLC resonant half-bridge primary stage for industrial AC/DC front-end modules.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch synchronized to resonant tank zero-voltage switching (ZVS) transitions.

Use Value: 45 mJ E_AS and 30 A I_AS ensure safe operation during ZVS boundary conditions and line transients.

Synchronous Rectification

Battery Protection

Use Scenario: Secondary-side synchronous rectifier in high-current 12 V/20 A laptop adapter or USB PD 3.0 charger.

IC Role / Device Role / Timing Role: Low-V_DS freewheeling switch replacing Schottky diode to reduce forward voltage drop and heat generation.

Use Value: R_DS(on) = 0.035 Ω @ 10 V enables <0.7 V effective forward drop at 20 A - cuts rectifier losses by >60 % vs. 40 V Schottky.

Use Scenario: Charge/discharge path switch in 2–4 cell Li-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Bidirectional current-blocking FET protecting against overcurrent, short-circuit, and reverse polarity.

Use Value: 200 V V_DS margin accommodates surge voltages up to 150 V during hot-plug events; 60 A I_S supports high pulse discharge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.022 Ω @ 10 V (lower), Q_g = 37.5 nC (higher), same PowerPAK SO-8 package and 200 V rating.	Better conduction loss but higher gate drive demand - preferred in low-frequency, high-current apps where switching loss is secondary.	Select SiR626DP-T1-RE3 when minimizing I²R loss dominates; retain SIR690DP-T1-RE3 when balancing Q_g/R_DS(on) for 200–500 kHz operation.
IRF6642TRPBF	200 V rating, R_DS(on) = 0.032 Ω @ 10 V, Q_g = 28 nC, but in standard SO-8 (not leadless) with R_thJC = 16 °C/W - significantly higher thermal resistance.	Limited to lower current or forced-air-cooled designs due to poor thermal performance; not suitable for compact, convection-cooled layouts.	Choose IRF6642TRPBF only if legacy SO-8 land pattern reuse is mandatory and thermal derating is acceptable; SIR690DP-T1-RE3 offers superior thermal headroom.

Compared with SiR626DP-T1-RE3, SIR690DP-T1-RE3 trades 37 % higher R_DS(on) for 15 % lower Q_g, improving high-frequency efficiency; versus IRF6642TRPBF, it delivers 14× lower R_thJC, enabling 2.5× higher continuous current on identical PCB copper area.

Availability

SIR690DP-T1-RE3 is available at Aetrix Electronics and suitable for DC/DC converters, primary-side switching, and battery protection systems requiring stable component supply, RoHS-compliant packaging, and long-lifecycle support.

Supply support for SIR690DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIR690DP-T1-RE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered for high-density, high-efficiency power conversion in industrial, telecom, and computing applications where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current rating for SIR690DP-T1-RE3 at 70 °C case temperature?

The SIR690DP-T1-RE3 supports 27.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated with actual board-level thermal design using the provided R_thJC = 0.9 °C/W typical value. The SIR690DP-T1-RE3 maintains safe operation up to 150 °C junction temperature under these conditions.

Does SIR690DP-T1-RE3 support gate drive from a 5 V microcontroller output?

Yes - the SIR690DP-T1-RE3 has a gate threshold voltage (V_GS(th)) of 2–4 V and achieves R_DS(on) ≤ 0.039 Ω at V_GS = 7.5 V, making it fully enhancement-mode compatible with 5 V logic-level gate drivers. However, for optimal R_DS(on) and switching speed, a 10 V drive is recommended; the SIR690DP-T1-RE3 remains functional and controllable at 5 V in space-constrained or low-voltage control designs.

How does the PowerPAK SO-8 package of SIR690DP-T1-RE3 improve thermal performance over standard SO-8?

The SIR690DP-T1-RE3 uses a leadless PowerPAK SO-8 package with an exposed drain pad on the bottom surface, reducing junction-to-case thermal resistance to 0.9 °C/W typical - 14× lower than standard SO-8 (16 °C/W). This enables direct thermal coupling to PCB copper, allowing the SIR690DP-T1-RE3 to dissipate up to 104 W at T_C = 25 °C without external heatsink, unlike standard SO-8 equivalents that require significant derating.

Is SIR690DP-T1-RE3 suitable for avalanche-prone circuits like inductive load switching?

Yes - the SIR690DP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy (E_AS) of 45 mJ and current (I_AS) of 30 A. This makes it suitable for hard-switched topologies such as flyback snubberless designs or relay driver circuits where inductive kickback must be absorbed internally without external clamping components.

What is the body diode reverse recovery time (t_rr) of SIR690DP-T1-RE3, and why does it matter in synchronous rectification?

The SIR690DP-T1-RE3 body diode has t_rr = 152 ns typical at T_J = 25 °C, I_F = 20 A, and di/dt = 100 A/μs. In synchronous rectification, low t_rr minimizes reverse recovery charge (Q_rr = 550 nC typ.), reducing shoot-through risk and switching losses when the FET turns on immediately after body diode conduction - directly improving efficiency in high-frequency DC/DC converters.

SIR690DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 34.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1935 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR690DP-T1-RE3 FAQ

1.How can I place an order for SIR690DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR690DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR690DP-T1-RE3 reliable?

The price and inventory of SIR690DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR690DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR690DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR690DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR690DP-T1-RE3?

SIR690DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR690DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR690DP-T1-RE3?

For technical support, including SIR690DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR690DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR690DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR690DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR690DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR690DP-T1-RE3?

All SIR690DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR690DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR690DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR690DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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