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Vishay Siliconix SIR696DP-T1-GE3
- Part No.:
- SIR696DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR696DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 125V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,157
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Product details
Overview
SIR696DP-T1-GE3 from Vishay Siliconix is an N-channel 125 V, 60 A (TC = 25 °C), PowerPAK® SO-8 packaged MOSFET with RDS(on) = 11.5 mΩ at VGS = 10 V and Qg = 19.4 nC (VGS = 7.5 V). It serves as a primary/secondary-side switch in high-efficiency DC/DC converters for fixed telecom infrastructure.
For engineers reviewing the SIR696DP-T1-GE3 datasheet, SIR696DP-T1-GE3 pinout, SIR696DP-T1-GE3 application, or SIR696DP-T1-GE3 equivalent, this device is evaluated for high-current switching in thermally constrained board-level power stages where low gate charge and robust avalanche capability are critical selection criteria.
Technical Context
This MOSFET employs ThunderFET® technology to concurrently optimize RDS(on), total gate charge (Qg), output charge (Qoss), and switching charge (Qsw). Its 125 V VDS rating supports operation across wide-input telecom DC/DC topologies including active clamp forward and LLC resonant converters.
It features 100 % Rg and UIS tested units, with a maximum junction-to-case thermal resistance of 1.2 °C/W enabling high-power dissipation on compact PCBs. The PowerPAK SO-8 package provides DPAK-equivalent thermal performance while maintaining SO-8 footprint compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 125 V - Supports input rails up to 100 V DC with margin for voltage transients in telecom power supplies. |
| RDS(on) max | 11.5 mΩ at VGS = 10 V - Enables <1.2 W conduction loss at 10 A continuous drain current in typical operating conditions. |
| ID continuous | 60 A at TC = 25 °C - Rated for high-current primary-side switching in 50–100 W isolated DC/DC modules. |
| Qg typ | 19.4 nC at VGS = 7.5 V - Reduces gate drive power and enables efficient operation at 300–500 kHz switching frequencies. |
| EAS | 80 mJ - Withstands single-pulse inductive energy during hard-switching events without failure. |
| RthJC max | 1.2 °C/W - Allows direct thermal coupling to copper pour or heatsink, supporting >60 W steady-state power dissipation. |
| VGS(th) | 2.5–4.5 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers. |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with exposed drain pad on bottom side; identical 5.15 mm × 6.15 mm footprint and pinout to standard SO-8, enabling drop-in replacement in existing layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5 | Gate (G) | Single gate input with Rg = 0.8–3.5 Ω - optimized for fast, controlled turn-on/turn-off with minimal ringing. |
| 6, 7, 8, D-pad | Drain (D) | Multi-terminal drain connection plus large exposed copper pad - provides low-inductance, low-resistance path for high pulsed currents and thermal conduction to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® optimization | Simultaneous minimization of RDS(on), Qg, Qsw, and Qoss - improves efficiency across light-to-full load in hard-switched topologies. |
| 100 % Rg testing | Guarantees gate resistance within 0.8–3.5 Ω range - ensures consistent switching timing and driver stage design margin. |
| 100 % UIS testing | Validated unclamped inductive switching robustness to 40 A single-pulse avalanche current - enhances system reliability under fault conditions. |
| PowerPAK SO-8 thermal performance | Junction-to-case RthJC = 0.9–1.2 °C/W - matches DPAK capability while fitting SO-8 land patterns, eliminating need for layout revision. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for environmentally regulated telecom and industrial deployments. |
Applications
| Fixed Telecom Power Supply | Isolated DC/DC Converter |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V/30 A output telecom rectifier module operating at 350 kHz. IC Role / Device Role / Timing Role: High-side N-channel MOSFET performing synchronous rectification and PWM-controlled power transfer. Use Value: 11.5 mΩ RDS(on) and 19.4 nC Qg enable >95 % peak efficiency and <1.5 °C junction rise above board temperature under full load. |
Use Scenario: Secondary-side synchronous rectifier in 36–75 V input, 5 V/20 A isolated flyback converter for base station control cards. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode to reduce conduction losses and improve light-load regulation. Use Value: Body diode VSD = 0.77 V and Qrr = 141 nC minimize reverse recovery losses and EMI generation during zero-voltage switching transitions. |
| Battery Management System | Industrial Motor Drive Stage |
Use Scenario: High-side protection switch in 48 V lithium-ion battery pack with active cell balancing and overcurrent cutoff. IC Role / Device Role / Timing Role: Load switch controlling main battery discharge path; activated only during normal operation. Use Value: 125 V VDS rating accommodates 10-cell stack transient spikes; 80 mJ EAS withstands inductive kickback from balancing circuitry. |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor driver for HVAC fan module with 15 A RMS phase current. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by bootstrap gate driver in 20 kHz PWM inverter stage. Use Value: 17 ns rise time and 7 ns fall time (Rg = 1 Ω) support clean edge transitions; 150 A IDM handles motor stall surges without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | Lower VDS (100 V), lower RDS(on) (7.2 mΩ @ 10 V), same PowerPAK SO-8 package and Qg (19.5 nC). | Not rated for 125 V bus transients; suitable only for ≤80 V input systems like PoE++ or 24 V industrial supplies. | Select when input voltage is capped below 90 V and lowest possible conduction loss is prioritized over transient margin. |
| IRF7470PBF | Standard SO-8 package, higher RDS(on) (14.5 mΩ @ 10 V), higher RthJA (54 °C/W), no UIS testing. | Lacks PowerPAK's thermal performance and avalanche ruggedness; requires larger heatsinking or derating in same PCB area. | Choose only if legacy SO-8 layout must be retained without copper modification and transient stress is negligible. |
Compared with SiR626DP-T1-GE3 and IRF7470PBF, the SIR696DP-T1-GE3 delivers superior 125 V transient immunity and DPAK-matched thermal resistance in an SO-8 footprint-enabling higher power density and reliability in telecom-grade power conversion without layout changes.
Availability
SIR696DP-T1-GE3 is available at Aetrix Electronics and suitable for fixed telecom infrastructure, isolated DC/DC converters, and battery management systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for SIR696DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIR696DP-T1-GE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered specifically for high-efficiency, high-reliability DC/DC conversion in space-constrained telecom and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIR696DP-T1-GE3 at 70 °C case temperature?
The SIR696DP-T1-GE3 supports 53.8 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package under sustained high-power operation and must be verified against actual board-level thermal performance using the provided RthJC = 1.2 °C/W maximum value. Designers should confirm junction temperature remains ≤150 °C under worst-case ambient and airflow conditions.
Does SIR696DP-T1-GE3 support logic-level gate drive?
Yes, the SIR696DP-T1-GE3 has a gate threshold voltage VGS(th) range of 2.5–4.5 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement to its rated RDS(on) of 11.5 mΩ requires VGS ≥ 10 V. For optimal efficiency and switching speed, a 10 V gate drive is recommended - especially when operating near maximum current ratings.
How does the PowerPAK SO-8 package of SIR696DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?
The SIR696DP-T1-GE3's PowerPAK SO-8 package achieves a maximum junction-to-case thermal resistance (RthJC) of 1.2 °C/W - matching DPAK performance and offering ~13× better thermal conduction than a standard SO-8 (RthJC ≈ 16 °C/W). This allows the SIR696DP-T1-GE3 to dissipate over 60 W at TC = 25 °C, whereas a standard SO-8 device would be limited to <5 W under identical conditions.
Is SIR696DP-T1-GE3 suitable for use as a synchronous rectifier in a flyback converter?
Yes, the SIR696DP-T1-GE3 is well-suited as a secondary-side synchronous rectifier due to its low RDS(on) (11.5 mΩ), fast body diode (trr = 69 ns typ., Qrr = 141 nC), and low Qgd/Qgs ratio. Its 125 V rating also provides margin for reflected voltage spikes in universal-input flyback designs. Gate drive timing must account for its 10–12 ns turn-on delay to avoid shoot-through.
What is the avalanche energy rating of SIR696DP-T1-GE3, and how is it validated?
The SIR696DP-T1-GE3 is rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, and all units undergo 100 % unclamped inductive switching (UIS) testing per JEDEC JESD24-11. This validation ensures robustness against inductive turn-off transients in hard-switched topologies such as forward and push-pull converters, where voltage overshoot may exceed VDS rating.
SIR696DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 125 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1410 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR696DP-T1-GE3 FAQ
1.How can I place an order for SIR696DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR696DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR696DP-T1-GE3 reliable?
The price and inventory of SIR696DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR696DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR696DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR696DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR696DP-T1-GE3?
SIR696DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR696DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR696DP-T1-GE3?
For technical support, including SIR696DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR696DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR696DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR696DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR696DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR696DP-T1-GE3?
All SIR696DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR696DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR696DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR696DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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