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Vishay Siliconix SIR774DP-T1-GE3
- Part No.:
- SIR774DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
SIR774DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V
- Quantity:
- Payment:
- Shipping:
Inventory:5,561
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Product details
Overview
SIR774DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a PowerPAK® SO-8 package, delivering RDS(on) of 2.6 mΩ at VGS = 10 V and 3.4 mΩ at VGS = 4.5 V, rated for 40 A continuous drain current at TC = 25 °C, and optimized for low-side VRM, POL, and Vcore applications in server and notebook power stages.
For engineers reviewing the SIR774DP-T1-GE3 datasheet, SIR774DP-T1-GE3 pinout, SIR774DP-T1-GE3 application, or SIR774DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET®/TrenchFET® architecture, 100 % Rg and UIS tested reliability, halogen-free and RoHS-compliant construction, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.
Technical Context
This device integrates a high-performance N-channel trench MOSFET and a co-packaged Schottky diode in a single PowerPAK SO-8 leadless package, enabling synchronous rectification and body-diode replacement in buck converter low-side switches. Its gate threshold voltage (1–2.2 V) and low Qg (28.5 nC at VGS = 4.5 V) support efficient 4.5 V gate drive in modern CPU/GPU VRMs.
The monolithic integration reduces parasitic inductance and improves reverse recovery behavior: trr = 29–55 ns and Qrr = 17.5–33 nC at IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C. Thermal resistance is specified as RthJC = 1.6–2.0 °C/W (junction-to-case, drain) and RthJA = 20–25 °C/W (junction-to-ambient, t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 12 V input bus and 3.3/1.8/1.2 V output VRM stages. |
| RDS(on) @ VGS = 10 V | 2.6 mΩ max - Enables <1 W conduction loss at 20 A, critical for high-efficiency server POL converters. |
| RDS(on) @ VGS = 4.5 V | 3.4 mΩ max - Ensures stable on-resistance under typical 5 V gate-drive conditions in notebook Vcore designs. |
| ID Continuous (TC = 25 °C) | 40 A - Supports high-current low-side switching without external heatsinking in compact PCB layouts. |
| Qg Total Gate Charge | 28.5 nC (typ.) at VGS = 4.5 V - Reduces gate driver power loss and enables fast switching (td(on) = 24 ns, tf = 12 ns). |
| VSD Body Diode Forward Voltage | 0.41–0.6 V at IS = 5 A - Low forward drop minimizes freewheeling loss and heat generation during dead-time conduction. |
| RthJC | 1.6 °C/W (typ.) - Matches DPAK thermal performance, enabling direct thermal interface to copper pour or heatsink via exposed drain pad. |
Pinout & Package
Package: PowerPAK® SO-8 - leadless, surface-mount package with same 6.15 mm × 5.15 mm footprint and pinout as standard SO-8, featuring exposed copper drain terminals on bottom side for enhanced thermal conduction and mechanical robustness. Compliant with JEDEC MS-012AC outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires low-impedance gate driver due to 0.2–1.9 Ω gate resistance (Rg). |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground plane in low-side configurations. |
| 3 (D) | Drain (Terminal 1) | Primary high-current output path; electrically and thermally connected to large bottom-side copper pad. |
| 4 (D) | Drain (Terminal 2) | Parallel drain connection; reduces current density and thermal gradient across package. |
| 5 (D) | Drain (Terminal 3) | Third drain terminal; shares load with pins 3 and 4 to achieve low RDS(on) and high pulse current capability (IDM = 80 A). |
| 6 (D) | Drain (Terminal 4) | Fourth drain terminal; completes symmetric drain layout for optimal current sharing and thermal spreading. |
| 7 (S) | Source (Terminal 2) | Secondary source connection; lowers source inductance and improves high-frequency switching stability. |
| 8 (S) | Source (Terminal 3) | Third source terminal; supports Kelvin sensing or separate return paths in precision current-monitoring designs. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Co-located MOSFET + Schottky diode eliminates discrete diode placement, reduces board area by >30 %, and cuts parasitic inductance by ~40 % vs. discrete solutions. |
| PowerPAK® SO-8 Package | Same footprint as SO-8 but with exposed drain pad delivering RthJC = 1.6 °C/W - thermal performance equivalent to DPAK in SO-8 space-constrained layouts. |
| 100 % Rg and UIS Tested | Every unit undergoes gate resistance screening and unclamped inductive switching stress test - ensures robustness in hard-switching VRM transients. |
| Halogen-Free & RoHS-Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated server and notebook manufacturing without performance trade-offs. |
| Low Qgd/Qgs Ratio | Qgd = 9.4 nC, Qgs = 7.6 nC - ratio of 1.24 enables clean Miller plateau transition and reduces risk of shoot-through in synchronous buck topologies. |
Applications
| Server VRM Low-Side Switch | Notebook Vcore Converter |
|---|---|
Use Scenario: Primary low-side switch in multiphase buck converters supplying core voltage to Xeon or EPYC CPUs under dynamic load steps up to 200 A/µs. IC Role / Device Role: Synchronous rectifier replacing body diode conduction; handles continuous 30–40 A DC current with minimal conduction and switching loss. Use Value: 2.6 mΩ RDS(on) at 10 V gate drive reduces full-load conduction loss to <1.2 W, enabling >95 % efficiency at 12 V input / 1.0 V output. |
Use Scenario: Low-side FET in dual-phase buck regulator powering Intel Core i7/i9 processors in ultrabooks with strict thermal envelope (<50 °C case temp). IC Role / Device Role: High-efficiency synchronous rectifier operating with 4.5 V gate drive from controller IC; manages 25 A peak per phase. Use Value: 3.4 mΩ RDS(on) at 4.5 V ensures stable on-resistance across temperature, limiting junction rise to <35 °C above ambient under full load. |
| Memory Power Delivery (DDR5) | GPU POL Module |
Use Scenario: Point-of-load regulator for DDR5 memory modules requiring tight voltage regulation (±3 %), fast transient response (<500 ns), and low noise. IC Role / Device Role: Low-side switch in 3-phase interleaved buck; operates at 1 MHz switching frequency with 50 ns dead time. Use Value: Low Qg (28.5 nC) and fast switching (tf = 12 ns) minimize gate drive loss and enable precise dead-time control to suppress shoot-through. |
Use Scenario: High-current POL stage in discrete GPU power delivery, handling 60–80 A peak loads with aggressive thermal cycling. IC Role / Device Role: Low-side synchronous rectifier paired with high-side GaN FET; conducts freewheeling current during high-side off-time. Use Value: Integrated Schottky diode (VSD = 0.41 V) replaces external diode, cutting reverse recovery loss by >70 % and eliminating trr-induced voltage spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 1.8 mΩ @ 10 V (lower), Qg = 42.5 nC @ 4.5 V (higher), same PowerPAK SO-8 package and Schottky integration. | Better conduction loss but higher gate drive demand; suited for fixed 10 V gate drive and ultra-high-efficiency server VRMs where gate driver capability permits. | Select SiR872DP-T1-GE3 when minimizing I²R loss dominates design priority and gate drive strength supports higher Qg. |
| SiR822DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 10 V (higher), Qg = 22.5 nC @ 4.5 V (lower), identical package and Schottky integration. | Lower gate charge enables faster switching and reduced driver loss; trade-off is ~15 % higher conduction loss at 40 A. | Select SiR822DP-T1-GE3 for notebook or mobile applications prioritizing gate drive efficiency and EMI reduction over absolute lowest RDS(on). |
Compared with SIR774DP-T1-GE3, SiR872DP-T1-GE3 delivers lower conduction loss at the cost of higher gate drive power, while SiR822DP-T1-GE3 sacrifices 0.4 mΩ RDS(on) to reduce Qg by 6 nC - enabling faster turn-off and lower EMI in space-constrained portable designs.
Availability
SIR774DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, notebook Vcore, and DDR5 memory power delivery requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIR774DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and automotive-grade qualification.
SIR774DP-T1-GE3 belongs to the SkyFET® PowerPAK SO-8 family, engineered specifically for high-current, high-frequency synchronous buck converters in datacenter and mobile computing power systems where low RDS(on), fast switching, and integrated Schottky diodes are essential.
FAQ
What is the maximum continuous drain current rating for SIR774DP-T1-GE3 at 70 °C case temperature?
The SIR774DP-T1-GE3 is rated for 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per Vishay Application Note AN821. At TA = 25 °C, the derated current is 32 A, and at TA = 70 °C it drops to 25.6 A. The SIR774DP-T1-GE3 maintains this performance due to its low RthJC of 1.6 °C/W and monolithic SkyFET® construction.
Does SIR774DP-T1-GE3 support 4.5 V gate drive in notebook Vcore applications?
Yes, the SIR774DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed at 3.4 mΩ max at VGS = 4.5 V and ID = 10 A. Its gate threshold voltage (1–2.2 V) ensures strong enhancement mode operation, and total gate charge is only 28.5 nC (typ.) at this voltage - making the SIR774DP-T1-GE3 ideal for 5 V logic-level controllers in notebook Vcore designs.
How does the integrated Schottky diode in SIR774DP-T1-GE3 improve buck converter efficiency?
The integrated Schottky diode in the SIR774DP-T1-GE3 provides VSD = 0.41–0.6 V at IS = 5 A and eliminates reverse recovery charge (Qrr = 17.5–33 nC) and time (trr = 29–55 ns) associated with conventional body diodes. This reduces freewheeling loss and voltage spikes during dead time, directly improving light-load efficiency and EMI performance in buck converters using the SIR774DP-T1-GE3.
Is SIR774DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, the SIR774DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm footprint and pinout (G-S-D-D-D-D-S-S) as standard SO-8 devices. It is designed for direct substitution onto existing SO-8 land patterns, though optimal thermal performance requires extending the drain copper area per Vishay Application Note AN826. No PCB redesign is needed to evaluate the SIR774DP-T1-GE3.
What thermal resistance values apply to SIR774DP-T1-GE3 in a typical 4-layer FR-4 board?
On a standard 4-layer FR-4 board with 1" × 1" copper area, the SIR774DP-T1-GE3 achieves RthJA ≈ 20–25 °C/W (t ≤ 10 s) and RthJC = 1.6 °C/W (steady state). With optimized spreading copper (≥0.3 in²), RthJA can improve to ~35–40 °C/W. These values are validated in Vishay Application Note AN821 and confirm the SIR774DP-T1-GE3 delivers DPAK-equivalent thermal performance in SO-8 form factor.
SIR774DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
SIR774DP-T1-GE3 FAQ
1.How can I place an order for SIR774DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR774DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR774DP-T1-GE3 reliable?
The price and inventory of SIR774DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR774DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR774DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR774DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR774DP-T1-GE3?
SIR774DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR774DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR774DP-T1-GE3?
For technical support, including SIR774DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR774DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR774DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR774DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR774DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR774DP-T1-GE3?
All SIR774DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR774DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR774DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR774DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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