My Inquiry
My Account
Vishay Siliconix SIR788DP-T1-GE3
- Part No.:
- SIR788DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR788DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,771
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR788DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in PowerPAK® SO-8 package, featuring RDS(on) = 3.4 mΩ at VGS = 10 V, 60 A continuous drain current (TC = 25 °C), and 24 nC total gate charge - optimized for high-efficiency synchronous buck converters in server VRMs and POL DC/DC modules.
For engineers reviewing the SIR788DP-T1-GE3 datasheet, SIR788DP-T1-GE3 pinout, SIR788DP-T1-GE3 application, or SIR788DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® trench architecture, 100 % avalanche-tested ruggedness, junction-to-case thermal resistance of 2.1 °C/W, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This device integrates a trench-gate N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK SO-8 leadless package, enabling synchronous rectification without external diode placement. Its monolithic SkyFET® Gen III structure delivers low Qg/Qgd ratio (24 nC / 7.8 nC) and fast switching (td(off) = 29 ns at VGEN = 10 V), supporting high-frequency operation up to 1 MHz.
The device operates with VGS(th) = 1–2.5 V and supports gate drive down to 4.5 V (RDS(on) = 4.3 mΩ), making it suitable for 5 V and 3.3 V logic-level control. Its body diode exhibits VSD = 0.47–0.60 V at IS = 3 A and trr = 23–45 ns, reducing reverse recovery losses in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial POL converters. |
| RDS(on) @ 10 V | 3.4 mΩ max - Enables <1.5 W conduction loss at 60 A, critical for high-current CPU/GPU VRMs. |
| ID (continuous) | 60 A @ TC = 25 °C - Supports high-current output stages without paralleling; derates to 22.8 A at TA = 70 °C on FR4. |
| Qg (typ.) | 24 nC @ VGS = 4.5 V - Low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching. |
| RthJC | 2.1 °C/W typical - Matches DPAK thermal performance, allowing direct thermal pad integration into PCB copper planes. |
| VSD | 0.47–0.60 V @ IS = 3 A - Schottky diode forward drop minimizes dead-time conduction loss in synchronous buck. |
| trr | 23–45 ns - Fast reverse recovery avoids shoot-through and reduces EMI in high-dV/dt applications. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed copper drain paddle on bottom side, identical 5.15 mm × 6.15 mm footprint to standard SO-8 but with enhanced thermal and current-carrying capability. The package uses SkyFET® monolithic integration of MOSFET and Schottky diode on a single die.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires 1–2.5 V threshold and ≤20 V absolute max rating. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to power ground in buck low-side configuration. |
| 3 (D) | Drain | Main power output node; electrically connected to exposed bottom paddle for low-inductance, high-current routing. |
| 4 (D) | Drain | Second drain connection - parallel path to reduce package inductance and improve current sharing in high-frequency operation. |
| 5 (D) | Drain | Third drain connection - reinforces thermal and electrical connection to PCB copper pour under device. |
| 6 (D) | Drain | Fourth drain connection - completes quad-drain layout for symmetric current distribution and minimized loop inductance. |
| 7 (S) | Source | Secondary source terminal - provides redundant low-impedance return path for high di/dt currents. |
| 8 (S) | Source | Third source terminal - enhances current handling and reduces source inductance in synchronous rectifier mode. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Single-die co-integration of trench MOSFET + Schottky diode eliminates bond wire parasitics and ensures matched thermal tracking. |
| 100 % Avalanche Tested | Guarantees ruggedness against inductive switching transients up to IAS = 25 A and EAS = 31 mJ without degradation. |
| PowerPAK SO-8 Footprint Compatibility | Direct replacement for standard SO-8 layouts - no PCB redesign needed while achieving 10× lower RthJA than legacy SO-8. |
| Lead (Pb)-free & Halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B, with SnAgCu solder compatibility and 260 °C peak reflow profile. |
| Low Qgd/Qg Ratio | 7.8 nC / 24 nC = 0.325 - Reduces Miller plateau time and improves controllability during hard switching transitions. |
Applications
| Server Voltage Regulator Modules (VRMs) | Point-of-Load (POL) DC/DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 200 A per rail. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight dead-time control. Use Value: 3.4 mΩ RDS(on) and 24 nC Qg minimize both conduction and switching losses, enabling >95 % efficiency at full load. |
Use Scenario: Compact 12 V input to 3.3 V/5 V output converter on telecom or networking board with space constraints. IC Role / Device Role / Timing Role: Primary power switch in high-density, thermally limited POL module requiring minimal heatsinking. Use Value: 2.1 °C/W RthJC allows direct thermal coupling to inner-layer copper, eliminating need for external thermal vias or heatsinks. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge high-side/low-side pair in 24 V BLDC motor gate driver with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current flow via integrated Schottky diode during freewheeling. Use Value: 0.47 V VSD and 23 ns trr reduce freewheeling loss and EMI compared to discrete FET+diode solutions. |
Use Scenario: 12 V battery-supplied 5 V/3.3 V power rail for radar sensor or camera ECU in ASIL-B systems. IC Role / Device Role / Timing Role: Primary switching element in isolated or non-isolated buck regulator meeting AEC-Q101 stress requirements. Use Value: -55 to 150 °C TJ range and 100 % avalanche testing support reliable operation under automotive load dump and cold crank conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V MOSFET with Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.2 mΩ @ 10 V (lower), Qg = 32 nC @ 10 V (higher), same PowerPAK SO-8 package | Better conduction loss but higher gate drive requirement; suited for lower-frequency, ultra-high-current designs | Select SIR788DP-T1-GE3 when prioritizing gate drive simplicity and mid-frequency efficiency over absolute lowest RDS(on). |
| IRF7759L2TRPBF | SO-8 package, RDS(on) = 3.6 mΩ @ 10 V, no integrated Schottky diode, RthJC = 3.5 °C/W | Requires external diode; higher thermal resistance limits power density in compact layouts | Choose SIR788DP-T1-GE3 where integrated Schottky and superior thermal performance justify slightly higher cost. |
Compared with SiR872DP-T1-GE3, SIR788DP-T1-GE3 trades 1.2 mΩ higher RDS(on) for 8 nC lower Qg, improving high-frequency efficiency and easing gate driver design; versus IRF7759L2TRPBF, it adds monolithic Schottky integration and 40 % lower RthJC, enabling smaller PCB area and higher reliability in thermally constrained applications.
Availability
SIR788DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, point-of-load DC/DC converters, and industrial motor drive gate drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR788DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR788DP-T1-GE3 belongs to Vishay's SkyFET® PowerPAK SO-8 product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing, telecom, and industrial power systems where thermal performance and integration are critical.
FAQ
What is the maximum continuous drain current rating for SIR788DP-T1-GE3 at 70 °C case temperature?
The SIR788DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per Vishay Application Note AN821. Derating applies above 70 °C case temperature, with linear reduction to zero at 150 °C junction temperature. The 60 A value reflects package-limited conduction capability, not silicon-limited current.
Does SIR788DP-T1-GE3 require a gate resistor for safe operation in a synchronous buck converter?
SIR788DP-T1-GE3 does not mandate an external gate resistor for basic functionality, but a 1–5 Ω resistor is recommended to damp ringing and control dV/dt during turn-on/turn-off. The device's Rg = 0.3–1.8 Ω (typ./max) and low Qgd/Qg ratio make it less prone to oscillation than older MOSFETs, yet gate resistance remains critical for EMI suppression and shoot-through prevention in high-side/low-side configurations using SIR788DP-T1-GE3.
Can SIR788DP-T1-GE3 be mounted on a standard SO-8 land pattern without modification?
Yes, SIR788DP-T1-GE3 is mechanically and electrically compatible with standard SO-8 footprints due to identical 5.15 mm × 6.15 mm outline and pin numbering. However, optimal thermal performance requires extending the drain pad beyond the standard SO-8 copper area - Vishay recommends ≥0.25 in² additional spreading copper per Application Note AN821. No PCB redesign is needed for functional operation, but thermal optimization yields up to 10 °C/W improvement in RthJA.
What is the body diode forward voltage of SIR788DP-T1-GE3 and how does it compare to discrete Schottky diodes?
The integrated Schottky diode in SIR788DP-T1-GE3 has VSD = 0.47–0.60 V at IS = 3 A and TJ = 25 °C. This matches performance of 3 A rated discrete Schottky diodes (e.g., SS34), but with tighter thermal coupling and zero interconnect inductance. Unlike discrete solutions, the monolithic diode shares the same junction temperature as the MOSFET, ensuring predictable forward drop across the full -55 to 150 °C operating range without thermal runaway risk.
Is SIR788DP-T1-GE3 qualified for automotive applications per AEC-Q101?
SIR788DP-T1-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (-55 to +150 °C) and meets JEDEC JESD22-A108 stress testing, but lacks the full qualification documentation, lot traceability, and failure analysis reporting required for automotive use. For automotive ADAS or infotainment power supplies, Vishay offers AEC-Q101 qualified equivalents such as SQJQ412E, though SIR788DP-T1-GE3 may be used in non-safety-critical auxiliary rails with customer validation.
SIR788DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2873 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 5W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR788DP-T1-GE3 FAQ
1.How can I place an order for SIR788DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR788DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR788DP-T1-GE3 reliable?
The price and inventory of SIR788DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR788DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR788DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR788DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR788DP-T1-GE3?
SIR788DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR788DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR788DP-T1-GE3?
For technical support, including SIR788DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR788DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR788DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR788DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR788DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR788DP-T1-GE3?
All SIR788DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR788DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR788DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR788DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR788DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
