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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR798DP-T1-GE3

Name: SIR798DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR798DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR798DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR798DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 60A PPAK SO-8

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Product details

Overview

SIR798DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) Power MOSFET with integrated Schottky diode in a PowerPAK® SO-8 package, delivering R_DS(on) = 2.05 mΩ at V_GS = 10 V and 3.00 mΩ at V_GS = 4.5 V, rated for 60 A continuous drain current at T_C = 25 °C, and optimized for low-side synchronous rectification in notebook PC V_core and memory power stages.

For engineers reviewing the SIR798DP-T1-GE3 datasheet, SIR798DP-T1-GE3 pinout, SIR798DP-T1-GE3 application, or SIR798DP-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® trench architecture, 100 % R_g and UIS tested reliability, lead-free/halogen-free compliance, and thermal performance matching DPAK-level R_thJC = 1.0 °C/W while retaining SO-8 footprint compatibility.

Technical Context

This device integrates a high-performance N-channel trench MOSFET and a co-packaged Schottky diode in a single PowerPAK® SO-8 leadless package, enabling synchronous rectification without external diode placement. Its gate threshold voltage (V_GS(th)) ranges from 1.0 to 2.5 V, supporting both 4.5 V and 10 V gate drive systems.

The MOSFET features ultra-low Q_g = 41.6 nC (at V_GS = 4.5 V) and Q_gd = 12.8 nC, minimizing switching losses in high-frequency DC/DC converters. Its body diode exhibits t_rr = 35–70 ns and Q_rr = 30–60 nC, reducing reverse recovery losses in buck converter low-side operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 3.3 V/5 V/12 V input rail applications.
R_DS(on) @ V_GS = 10 V	2.05 mΩ - Enables ≤ 2.5 W conduction loss at 60 A, critical for high-current V_core regulation.
R_DS(on) @ V_GS = 4.5 V	3.00 mΩ - Supports efficient operation with 4.5 V gate drive in space-constrained notebook designs.
I_D (continuous, T_C = 25 °C)	60 A - Matches high-phase-count CPU VRM output stage current requirements.
Q_g (typ., V_GS = 4.5 V)	41.6 nC - Reduces gate drive power and enables >1 MHz switching in compact VRMs.
R_thJC (max.)	1.5 °C/W - Provides DPAK-equivalent thermal resistance for direct heatsink mounting or PCB copper spreading.
Body diode V_SD @ I_S = 3 A	0.43–0.60 V - Low forward drop minimizes conduction loss during dead-time conduction.

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but featuring exposed drain pads on the bottom for enhanced thermal transfer. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET channel turn-on/off; requires low-impedance gate driver due to 0.2–1.4 Ω R_g.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configuration.
3 (D)	Drain	Main current path output; connected to output inductor node in buck converter topology.
4 (D)	Drain	Parallel drain connection to reduce package inductance and improve current sharing.
5 (D)	Drain	Third drain terminal for thermal and electrical current distribution across bottom-side copper pad.
6 (D)	Drain	Fourth drain terminal - all four D pins are internally bonded to the same die drain metallization.
7 (S)	Source	Secondary source connection for reduced source inductance and improved high-frequency stability.
8 (S)	Source	Third source terminal - all three S pins connect to common source bond fingers on the die.

Key Features

Feature	Design Value
SkyFET® Monolithic TrenchFET® + Schottky Diode	Single-package integration eliminates discrete diode placement, reduces board area by ≥30 %, and eliminates layout-dependent parasitic inductance.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy handling up to E_AS = 61.25 mJ - critical for VRM fault tolerance.
PowerPAK® SO-8 package	Delivers R_thJC = 1.0 °C/W (typ.), matching DPAK thermal performance while maintaining SO-8 land pattern compatibility for drop-in replacement.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2002/95/EC and IEC 61249-2-21, enabling use in environmentally regulated consumer electronics.
Low Q_gd/Q_g ratio	Q_gd = 12.8 nC / Q_g = 41.6 nC ≈ 0.31 - improves Miller immunity and enables stable operation at high dV/dt rates in dense VRMs.

Applications

Notebook PC V_core VRM	Notebook PC Memory Power
Use Scenario: High-efficiency, multi-phase buck converter supplying dynamic CPU core voltage (0.5–1.5 V) with peak currents up to 120 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating in continuous conduction mode (CCM), conducting during bottom switch interval with fast turn-on/turn-off timing. Use Value: 2.05 mΩ R_DS(on) at 10 V gate drive reduces conduction loss below 7.4 W at 60 A, directly improving VRM efficiency and thermal margin.	Use Scenario: Point-of-load regulator powering DDR3/DDR4 memory modules requiring tight voltage regulation (1.2–1.35 V) and fast transient response. IC Role / Device Role / Timing Role: Low-side switch in 300–600 kHz buck converter, leveraging integrated Schottky diode for dead-time conduction and reduced EMI. Use Value: 0.43–0.60 V body diode forward voltage lowers dead-time loss by ≥40 % versus standard MOSFETs, improving light-load efficiency.
Industrial DC/DC Converter	Telecom Intermediate Bus Converter
Use Scenario: 12 V input, 3.3 V/5 V output isolated or non-isolated converter for programmable logic controllers and sensor interfaces. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or buck-derived topologies, operating at 250–500 kHz with 50–75 % duty cycle. Use Value: 60 A continuous rating and 80 A pulsed capability support high-output-current designs without parallel devices, simplifying layout and BOM.	Use Scenario: 48 V intermediate bus converter stepping down to 12 V for baseband processing units in 4G/5G radio equipment. IC Role / Device Role / Timing Role: Low-side switch in high-density, thermally constrained half-bridge or multiphase buck stages with forced-air cooling. Use Value: R_thJC = 1.0 °C/W enables junction temperature rise of only ~2.7 °C at 60 A (2.7 W dissipation), allowing reliable operation at 85 °C ambient.

Notebook PC V_core VRM

Notebook PC Memory Power

Use Scenario: High-efficiency, multi-phase buck converter supplying dynamic CPU core voltage (0.5–1.5 V) with peak currents up to 120 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating in continuous conduction mode (CCM), conducting during bottom switch interval with fast turn-on/turn-off timing.

Use Value: 2.05 mΩ R_DS(on) at 10 V gate drive reduces conduction loss below 7.4 W at 60 A, directly improving VRM efficiency and thermal margin.

Use Scenario: Point-of-load regulator powering DDR3/DDR4 memory modules requiring tight voltage regulation (1.2–1.35 V) and fast transient response.

IC Role / Device Role / Timing Role: Low-side switch in 300–600 kHz buck converter, leveraging integrated Schottky diode for dead-time conduction and reduced EMI.

Use Value: 0.43–0.60 V body diode forward voltage lowers dead-time loss by ≥40 % versus standard MOSFETs, improving light-load efficiency.

Industrial DC/DC Converter

Telecom Intermediate Bus Converter

Use Scenario: 12 V input, 3.3 V/5 V output isolated or non-isolated converter for programmable logic controllers and sensor interfaces.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or buck-derived topologies, operating at 250–500 kHz with 50–75 % duty cycle.

Use Value: 60 A continuous rating and 80 A pulsed capability support high-output-current designs without parallel devices, simplifying layout and BOM.

Use Scenario: 48 V intermediate bus converter stepping down to 12 V for baseband processing units in 4G/5G radio equipment.

IC Role / Device Role / Timing Role: Low-side switch in high-density, thermally constrained half-bridge or multiphase buck stages with forced-air cooling.

Use Value: R_thJC = 1.0 °C/W enables junction temperature rise of only ~2.7 °C at 60 A (2.7 W dissipation), allowing reliable operation at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 1.75 mΩ @ 10 V (lower), Q_g = 47.5 nC @ 4.5 V (higher), same PowerPAK SO-8 package.	Better conduction loss at high current, but higher gate drive requirement limits high-frequency efficiency.	Select when peak efficiency at >50 A dominates over switching loss; verify gate driver capability for 47.5 nC charge.
SiR822DP-T1-GE3	R_DS(on) = 2.45 mΩ @ 10 V (higher), Q_g = 32.5 nC @ 4.5 V (lower), same package and pinout.	Optimized for <1 MHz operation with lower gate charge, sacrificing 20 % conduction loss vs. SIR798DP-T1-GE3.	Select for cost-sensitive, thermally relaxed designs where gate drive power reduction outweighs R_DS(on) penalty.

Compared with SiR872DP-T1-GE3 and SiR822DP-T1-GE3, SIR798DP-T1-GE3 strikes a balanced trade-off between conduction loss (2.05 mΩ) and gate charge (41.6 nC), making it optimal for mid-range VRM designs requiring both high current handling and sub-1 MHz switching efficiency without gate driver oversizing.

Availability

SIR798DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC V_core VRMs, memory power delivery systems, and industrial DC/DC converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for SIR798DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning applications.

The SIR798DP-T1-GE3 belongs to Vishay's SkyFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-efficiency synchronous rectification in space-constrained computing and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for SIR798DP-T1-GE3 at 70 °C case temperature?

The SIR798DP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is maintained due to its low R_DS(on) and PowerPAK® SO-8 package's 1.0 °C/W typical junction-to-case thermal resistance, enabling stable operation in thermally demanding VRM layouts without derating below 60 A until T_C exceeds 70 °C.

Does SIR798DP-T1-GE3 require external gate resistors for typical notebook VRM operation?

SIR798DP-T1-GE3 does not mandate external gate resistors in standard notebook VRM applications, as its intrinsic gate resistance (R_g = 0.2–1.4 Ω) provides sufficient damping for most gate drivers. However, a 1–5 Ω series resistor is recommended to control dv/dt and suppress ringing when driving at >500 kHz or with high-current gate drivers, per the datasheet's td(on)/tr/tf test conditions using R_g = 1 Ω.

Can SIR798DP-T1-GE3 be mounted on a standard SO-8 land pattern?

Yes, SIR798DP-T1-GE3 is mechanically compatible with standard SO-8 footprints due to identical outline and pin spacing per Vishay Application Note AN821. While thermal performance improves significantly with the recommended PowerPAK® SO-8 extended drain pad, baseline functionality and electrical operation are fully preserved on legacy SO-8 layouts - though R_thJA increases to ~23 °C/W (max) versus 18 °C/W with optimized copper.

What is the body diode reverse recovery charge (Q_rr) specification for SIR798DP-T1-GE3?

The body diode Q_rr for SIR798DP-T1-GE3 is 30–60 nC, measured at I_F = 10 A, dI/dt = 100 A/µs, and T_J = 25 °C. This low Q_rr value - enabled by the integrated Schottky diode - minimizes reverse recovery losses and associated EMI in synchronous buck converters, especially during light-load discontinuous conduction mode transitions.

Is SIR798DP-T1-GE3 qualified for reflow soldering with lead-free processes?

Yes, SIR798DP-T1-GE3 is qualified for lead-free reflow soldering per JEDEC J-STD-020, with a maximum peak temperature of 255 °C for 30 seconds. Vishay specifies the exact profile in document 73257, including ramp-up rate ≤ 3 °C/s, time above 217 °C of 60–150 s, and no manual soldering recommendation due to its leadless PowerPAK® construction.

SIR798DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.05mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5050 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR798DP-T1-GE3 FAQ

1.How can I place an order for SIR798DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR798DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR798DP-T1-GE3 reliable?

The price and inventory of SIR798DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR798DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR798DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR798DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR798DP-T1-GE3?

SIR798DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR798DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR798DP-T1-GE3?

For technical support, including SIR798DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR798DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR798DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR798DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR798DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR798DP-T1-GE3?

All SIR798DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR798DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR798DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR798DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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