My Inquiry
My Account
Vishay Siliconix SIR800ADP-T1-GE3
- Part No.:
- SIR800ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR800ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 50.2A/177A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,954
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR800ADP-T1-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 1.35 mΩ at VGS = 10 V, 1.75 mΩ at 4.5 V, and 4.60 mΩ at 2.5 V, with 177 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIR800ADP-T1-GE3 datasheet, SIR800ADP-T1-GE3 pinout, SIR800ADP-T1-GE3 application, or SIR800ADP-T1-GE3 equivalent, this device is selected for low-voltage, high-current switching where gate charge (Qg = 18.2 nC typ. at 4.5 V) and body diode recovery (trr = 32 ns typ.) critically impact converter efficiency and thermal management.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low on-resistance and optimized gate charge ratios (Qgd/Qgs) that reduce switching losses in hard-switched and synchronous buck topologies. Its 20 V VDS rating and 1.5 V maximum VGS(th) support direct drive from 3.3 V and 5 V controllers.
The PowerPAK® SO-8 package features exposed-drain copper pads on the bottom side for enhanced thermal conduction, with RthJC = 1.7 °C/W (typ.) and RthJA = 20 °C/W (t ≤ 10 s). The integrated source-drain diode exhibits VSD = 0.73 V (typ.) at 5 A and Qrr = 21 nC (typ.), enabling fast, low-loss reverse recovery in synchronous rectifier operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for 12 V input rail systems and point-of-load converters |
| RDS(on) @ VGS = 4.5 V | 1.75 mΩ max - Enables high-efficiency operation with 3.3 V–5 V gate drivers in synchronous buck stages |
| ID (continuous, TC = 25 °C) | 177 A - Supports high-current output stages without parallel devices in compact power modules |
| Qg @ VGS = 4.5 V | 18.2 nC typ. - Low gate charge reduces driver power loss and enables higher PWM frequencies up to 1 MHz |
| trr (body diode) | 32 ns typ. - Minimizes reverse recovery energy loss during dead-time conduction in synchronous rectifiers |
| RthJC | 1.7 °C/W typ. - Enables direct thermal path to PCB copper or heatsink, critical for >100 W/in² power density designs |
| VGS(th) | 0.6–1.5 V - Ensures reliable turn-on with logic-level gate drivers and supports zero-voltage switching (ZVS) control schemes |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), JEDEC MO-263 compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface provides primary thermal path and low-inductance power return |
| Gate (G) | Control terminal | Single gate pin (Pin 1 not used per top view; actual gate is Pin 1 in standard SO-8 mapping but reconfigured - confirmed as Pin 1 in Vishay PowerPAK SO-8 Single top-view diagram: G at Pin 1, S at Pins 2–4, D at Pins 5–8) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 30 % lower RDS(on) × Qg figure-of-merit vs. prior generation, directly reducing total switching loss |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<0.4–1.4 Ω) and ruggedness against unclamped inductive switching stress |
| Optimized Qgd/Qgs ratio | Minimizes Miller plateau duration, improving controllability during hard switching and reducing EMI generation |
| Exposed-drain thermal pad | Enables <1.7 °C/W junction-to-case resistance, allowing >60 W dissipation with minimal heatsinking on 1 oz. FR4 |
| Low VGS(th) variation | ΔVGS(th)/TJ = –3.6 mV/°C ensures stable turn-on threshold across –55 to +150 °C operating range |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
Use Scenario: Primary high-side or synchronous rectifier switch in 12 V input → 1 V/100 A output VRM for AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diode to eliminate forward voltage drop and recover conduction loss. Use Value: Reduces conduction loss by >65 % vs. 0.4 V Schottky at 100 A, lowering junction temperature rise by 22 °C under full load. |
Use Scenario: Output stage switch in 48 V → 12 V intermediate bus converter for telecom shelf power. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch operating at 300–500 kHz with tight thermal constraints. Use Value: Enables 97.2 % peak efficiency at 200 A output due to 1.75 mΩ RDS(on) at 4.5 V drive and 32 ns trr minimizing dead-time loss. |
| Server VRM Phase Doubler | Industrial PLC Power Supply |
Use Scenario: Secondary-side switch in interleaved multiphase buck using phase-doubling topology for CPU core rails. IC Role / Device Role / Timing Role: Synchronous rectifier in each phase leg, driven by dedicated gate driver with adaptive dead-time control. Use Value: Achieves <1.2 mΩ effective on-resistance per phase via paralleling, supporting >300 A transient current with <15 mV droop. |
Use Scenario: Load switch and hot-swap controller in 24 V industrial I/O module with overcurrent and thermal protection. IC Role / Device Role / Timing Role: Main power FET handling inrush current limiting and controlled turn-on via gate resistor network. Use Value: Withstands 20 V system transients and delivers 50.2 A continuous at ambient (TA = 25 °C), meeting IEC 61000-4-5 surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 1.95 mΩ @ 4.5 V; Qg = 16.5 nC; PowerPAK® 1212-8 package (smaller footprint, higher RthJA) | Lower current rating (100 A) and higher thermal resistance limit use in >150 W applications | Select when board space is constrained and thermal budget allows higher junction temperature rise |
| DMTH2006LPSQ-13 | RDS(on) = 1.65 mΩ @ 4.5 V; Qg = 22.5 nC; SO-8 package with gull-wing leads (higher RthJC = 3.0 °C/W) | Lead-based package increases parasitic inductance and limits high-frequency switching efficiency | Select when leaded assembly is required or legacy SO-8 footprint compatibility is mandatory |
Compared with IRLHS6342TRPBF and DMTH2006LPSQ-13, the SIR800ADP-T1-GE3 offers the lowest RDS(on) × Qg product (31.2 mΩ·nC) and best thermal performance (RthJC = 1.7 °C/W), making it optimal for high-power-density, high-efficiency synchronous rectification where thermal headroom and switching loss are critical.
Availability
SIR800ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIR800ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR800ADP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, low-voltage synchronous rectification and DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current for SIR800ADP-T1-GE3 at case temperature of 70 °C?
The SIR800ADP-T1-GE3 supports 142 A continuous drain current when the case temperature (TC) is maintained at 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 177 A value at TC = 25 °C due to thermal limitations, and must be validated with actual PCB layout and heatsinking in the target application.
Does SIR800ADP-T1-GE3 have a guaranteed gate threshold voltage range?
Yes, the SIR800ADP-T1-GE3 has a guaranteed gate-source threshold voltage (VGS(th)) range of 0.6 V to 1.5 V at TJ = 25 °C and ID = 250 μA, ensuring reliable turn-on with standard 3.3 V and 5 V gate drivers. The VGS(th) exhibits a temperature coefficient of –3.6 mV/°C, maintaining stable switching behavior across its –55 to +150 °C operating range.
Can SIR800ADP-T1-GE3 be used in synchronous rectifier applications with 2.5 V gate drive?
Yes, the SIR800ADP-T1-GE3 is fully characterized for 2.5 V gate drive, with RDS(on) = 4.60 mΩ max at ID = 10 A. This enables use with advanced low-voltage controllers and digital PWM ICs that output 2.5 V logic levels, though conduction loss will be ~3.4× higher than at 4.5 V drive - design validation of thermal margin is essential.
What is the thermal resistance from junction to ambient for SIR800ADP-T1-GE3 under transient conditions?
The SIR800ADP-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 25 °C/W for pulse durations ≤10 s when mounted on a 1" × 1" FR4 board with 1 oz. copper, per the datasheet note b. For steady-state operation, RthJA is not specified - thermal design must rely on RthJC = 1.7 °C/W and proper PCB copper area or heatsink interface.
Is SIR800ADP-T1-GE3 suitable for avalanche energy handling in inductive switching circuits?
Yes, the SIR800ADP-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and single-pulse avalanche current (IAS) of 20 A with L = 0.1 mH, confirming its capability to safely absorb inductive energy during unclamped switching events. It is 100 % UIS (unclamped inductive switching) tested per production flow.
SIR800ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 50.2A (Ta), 177A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.35mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3415 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR800ADP-T1-GE3 FAQ
1.How can I place an order for SIR800ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR800ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR800ADP-T1-GE3 reliable?
The price and inventory of SIR800ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR800ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR800ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR800ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR800ADP-T1-GE3?
SIR800ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR800ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR800ADP-T1-GE3?
For technical support, including SIR800ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR800ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIR800ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR800ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR800ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR800ADP-T1-GE3?
All SIR800ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR800ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR800ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR800ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR800ADP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
