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Vishay Siliconix SIR802DP-T1-GE3

Name: SIR802DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR802DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR802DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR802DP-T1-GE3.pdf

Description:: MOSFET N-CH 20V 30A PPAK SO-8

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Product details

Overview

SIR802DP-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering 30 A continuous drain current at T_C = 25 °C, R_DS(on) = 5.0 mΩ at V_GS = 10 V, and 15.5 nC total gate charge - optimized for high-efficiency DC/DC converters and point-of-load (POL) power stages.

For engineers reviewing the SIR802DP-T1-GE3 datasheet, SIR802DP-T1-GE3 pinout, SIR802DP-T1-GE3 application, or SIR802DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, 100 % UIS-tested ruggedness, halogen-free and RoHS-compliant construction, and thermal performance matching DPAK while retaining SO-8 footprint compatibility.

Technical Context

This MOSFET employs trench-based silicon architecture with enhanced channel density to achieve sub-5-mΩ on-resistance at 10 V gate drive and stable 5.7 mΩ at 4.5 V - enabling efficient operation in 3.3 V and 5 V gate-driven synchronous buck topologies. Its integrated body diode exhibits t_rr = 21–40 ns and Q_rr = 10.5–20 nC, supporting fast switching with reduced recovery loss.

The PowerPAK® SO-8 package features exposed drain paddle on bottom side, delivering R_thJC = 3.5 °C/W (typ.) and R_thJA = 22 °C/W (typ., t ≤ 10 s), enabling higher power density than standard SO-8 without PCB layout changes - validated for reflow up to 260 °C peak per JEDEC J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 16 V in POL applications with 20 % safety margin
R_DS(on) @ V_GS = 10 V	5.0 mΩ (max) - enables <1.5 W conduction loss at 17.3 A in 12 V input, 1 V output buck stage
R_DS(on) @ V_GS = 4.5 V	5.7 mΩ (max) - ensures robust turn-on with 5 V or 3.3 V controller gate drive
Q_g	15.5 nC (typ., V_DS = 15 V, V_GS = 4.5 V) - balances switching speed and gate driver loading in 500 kHz–1 MHz designs
I_D (continuous, T_C = 25 °C)	30 A - package-limited current rating suitable for high-current single-phase POL modules
R_thJC	3.5 °C/W (typ.) - allows direct thermal coupling to heatsink or copper pour, enabling >20 W dissipation with modest ΔT
t_r/t_f	11–28 ns (V_GEN = 4.5–10 V) - supports clean, low-overshoot switching in high-frequency synchronous rectification

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, featuring exposed drain paddle on bottom for low-inductance, high-current routing and enhanced thermal transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <1.5 Ω series resistance to damp ringing due to low R_g = 0.75 Ω (max)
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground plane
3 (S)	Source	Second source connection - paralleled internally with Pin 2 to reduce source inductance
4 (S)	Source	Third source connection - reduces common-source inductance in high-dI/dt switching
5 (D)	Drain	Main power output path; connected to large copper area via bottom-exposed paddle
6 (D)	Drain	Second drain terminal - electrically tied to bottom paddle, improves current sharing
7 (D)	Drain	Third drain terminal - enhances thermal and electrical connection to PCB drain plane
8 (D)	Drain	Fourth drain terminal - completes low-impedance path from die to board

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Enables 5.0 mΩ R_DS(on) at 10 V in SO-8 footprint - 40 % lower than prior-gen equivalents
100 % UIS tested	Guarantees avalanche energy handling of E_AS = 20 mJ - critical for inductive load switching reliability
PowerPAK® SO-8 package	Delivers DPAK-level thermal performance (R_thJC = 3.5 °C/W) in SO-8 outline - no PCB redesign needed
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer and industrial end-equipment certification
Low Q_gd/Q_g ratio	Q_gd = 3.6 nC / Q_g = 15.5 nC → 23 % - improves hard-switching efficiency and reduces Miller-induced shoot-through risk

Applications

Server VRMs	Industrial PLC I/O Modules
Use Scenario: High-current, multi-phase voltage regulator modules supplying CPU/GPU core power in 1U servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500 kHz–1 MHz buck converter, switching 30 A peak per phase. Use Value: 5.0 mΩ R_DS(on) minimizes conduction loss; 15.5 nC Q_g enables fast, low-loss transitions without excessive gate drive power.	Use Scenario: Isolated 24 V DC input to 3.3 V/5 V logic supply in programmable logic controller backplane. IC Role / Device Role / Timing Role: Low-side switch in compact, thermally constrained POL converter operating at 1 MHz. Use Value: 5.7 mΩ R_DS(on) at 4.5 V gate drive ensures full enhancement with microcontroller GPIO; PowerPAK thermal performance sustains 18.2 A at T_A = 70 °C.
Telecom Base Station RF Power Supplies	Automotive ADAS Camera Power Rails
Use Scenario: Intermediate bus converter (48 V to 12 V) feeding RF amplifier bias supplies in macrocell base stations. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck stage, operating continuously under forced-air cooling. Use Value: 100 % UIS testing ensures survival during transient overloads; R_thJC = 3.5 °C/W allows direct mounting to aluminum heatsink for <100 °C junction rise.	Use Scenario: Compact 12 V to 1.8 V/3.3 V power rail for image sensor and ISP in rear-view camera module. IC Role / Device Role / Timing Role: High-efficiency POL switch in space-constrained automotive-grade PCB with 105 °C ambient. Use Value: Halogen-free/RoHS compliance meets automotive material requirements; 22.6 A rating at T_A = 25 °C supports derated operation across -40 °C to +105 °C ambient.

Server VRMs

Industrial PLC I/O Modules

Use Scenario: High-current, multi-phase voltage regulator modules supplying CPU/GPU core power in 1U servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 500 kHz–1 MHz buck converter, switching 30 A peak per phase.

Use Value: 5.0 mΩ R_DS(on) minimizes conduction loss; 15.5 nC Q_g enables fast, low-loss transitions without excessive gate drive power.

Use Scenario: Isolated 24 V DC input to 3.3 V/5 V logic supply in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Low-side switch in compact, thermally constrained POL converter operating at 1 MHz.

Use Value: 5.7 mΩ R_DS(on) at 4.5 V gate drive ensures full enhancement with microcontroller GPIO; PowerPAK thermal performance sustains 18.2 A at T_A = 70 °C.

Telecom Base Station RF Power Supplies

Automotive ADAS Camera Power Rails

Use Scenario: Intermediate bus converter (48 V to 12 V) feeding RF amplifier bias supplies in macrocell base stations.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck stage, operating continuously under forced-air cooling.

Use Value: 100 % UIS testing ensures survival during transient overloads; R_thJC = 3.5 °C/W allows direct mounting to aluminum heatsink for <100 °C junction rise.

Use Scenario: Compact 12 V to 1.8 V/3.3 V power rail for image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: High-efficiency POL switch in space-constrained automotive-grade PCB with 105 °C ambient.

Use Value: Halogen-free/RoHS compliance meets automotive material requirements; 22.6 A rating at T_A = 25 °C supports derated operation across -40 °C to +105 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 22.5 nC; same PowerPAK SO-8 package	Higher current density but increased gate charge - better for <300 kHz, lower-loss priority	Select when lowest possible conduction loss dominates over switching loss and gate drive capability permits higher Q_g.
IRLHS6242PBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 12.5 nC; SO-8 (leaded) package; R_thJC = 6.0 °C/W	Lower Q_g but significantly worse thermal resistance - limits usable current in thermally constrained layouts	Choose only if legacy SO-8 land pattern must be retained and thermal margin exceeds 25 °C/W requirement.

Compared with SIR802DP-T1-GE3, SiR872DP-T1-GE3 offers lower R_DS(on) at cost of higher Q_g, while IRLHS6242PBF trades thermal performance for leaded-package compatibility - making SIR802DP-T1-GE3 the balanced choice for new 1 MHz POL designs requiring both low loss and robust thermal management.

Availability

SIR802DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and telecom base station power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIR802DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability across industrial, computing, and telecom markets.

The SiR802DP product line delivers high-current, low-voltage N-channel MOSFETs optimized for next-generation point-of-load regulation - combining TrenchFET® Gen III silicon with PowerPAK® SO-8 packaging to maximize power density without compromising thermal or switching performance.

FAQ

What is the maximum continuous drain current rating for SIR802DP-T1-GE3 at 70 °C case temperature?

The SIR802DP-T1-GE3 supports 30 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value due to the PowerPAK® SO-8's low R_thJC = 3.5 °C/W, which maintains junction temperature within 150 °C limit even at elevated case temperatures. The SIR802DP-T1-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)".

Does SIR802DP-T1-GE3 support 3.3 V gate drive in practical applications?

Yes, the SIR802DP-T1-GE3 is fully characterized down to V_GS = 2.5 V, with R_DS(on) = 7.6 mΩ (max) at 6 A. At 3.3 V gate drive, typical R_DS(on) is ~6.3 mΩ - sufficient for high-efficiency operation in 3.3 V-controlled POL stages. The gate threshold voltage range (0.6–1.5 V) ensures reliable turn-on, and the device's low Q_g (15.5 nC at 4.5 V) minimizes gate drive burden. This behavior is documented in the "Drain-Source On-State Resistance" section of the SIR802DP-T1-GE3 datasheet.

Is SIR802DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, the SIR802DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical 5.15 mm × 6.15 mm footprint and pinout (G-S-S-S-D-D-D-D) as standard SO-8. Vishay explicitly states it "can be substituted directly for a standard SO-8 package" and is compatible with existing SO-8 land patterns - though optimal thermal performance requires extended drain copper. This compatibility is confirmed in Application Note AN821 and the Package Information document 71655 for the SIR802DP-T1-GE3.

What is the avalanche energy rating of SIR802DP-T1-GE3, and is it production-tested?

The SIR802DP-T1-GE3 has a single-pulse avalanche energy rating of E_AS = 20 mJ (L = 0.1 mH), and it undergoes 100 % Unclamped Inductive Switching (UIS) testing during production. This ensures every unit meets the rated avalanche capability, critical for reliability in inductive switching applications like DC/DC converters. The test condition and pass/fail criteria are defined in Vishay's internal qualification standards and referenced in the "FEATURES" section of the SIR802DP-T1-GE3 datasheet.

How does the thermal performance of SIR802DP-T1-GE3 compare to traditional SO-8 MOSFETs?

The SIR802DP-T1-GE3 achieves R_thJC = 3.5 °C/W (typ.), matching DPAK performance and offering ~4.5× lower junction-to-case resistance than standard SO-8 (typically ~16 °C/W). This enables >20 W power dissipation with <70 °C junction rise when mounted on adequate copper, versus <5 W for conventional SO-8. The improvement stems from the exposed drain paddle and optimized die attach in the PowerPAK® SO-8 package - data verified in Application Note AN821 and the SIR802DP-T1-GE3 thermal characterization plots.

SIR802DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1785 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 4.6W (Ta), 27.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR802DP-T1-GE3 FAQ

1.How can I place an order for SIR802DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR802DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR802DP-T1-GE3 reliable?

The price and inventory of SIR802DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR802DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR802DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR802DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR802DP-T1-GE3?

SIR802DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR802DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR802DP-T1-GE3?

For technical support, including SIR802DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR802DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR802DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR802DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR802DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR802DP-T1-GE3?

All SIR802DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR802DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR802DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR802DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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