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Vishay Siliconix SIR812DP-T1-GE3
- Part No.:
- SIR812DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR812DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,039
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Product details
Overview
SIR812DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering 60 A continuous drain current at TC = 25 °C, RDS(on) of 1.45 mΩ at VGS = 10 V, and 2.00 mΩ at VGS = 4.5 V. It serves as a high-efficiency synchronous rectifier or load switch in industrial motor control and ORing applications.
For engineers reviewing the SIR812DP-T1-GE3 datasheet, SIR812DP-T1-GE3 pinout, SIR812DP-T1-GE3 application, or SIR812DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 109 nC total gate charge, 1.2 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and motor drivers. Its gate threshold voltage (1.0–2.3 V) enables robust 4.5 V logic-level drive, and its 100 % Rg and UIS tested construction ensures reliability under repetitive stress conditions.
The device integrates a body diode with 0.68–1.1 V forward voltage at 5 A and 38–76 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in ORing configurations. Its PowerPAK SO-8 package features exposed drain pads on the bottom side for direct thermal coupling to PCB copper, achieving 0.9 °C/W typical RthJC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 30 V - Absolute maximum drain-source blocking voltage; defines safe operation in 24 V systems with transient margin. |
| RDS(on) @ 10 V | 1.45 mΩ max - Enables <1.8 W conduction loss at 60 A, critical for high-current load switches. |
| RDS(on) @ 4.5 V | 2.00 mΩ max - Ensures full enhancement with 5 V microcontroller GPIO or PWM driver outputs. |
| Qg (Typ) | 109 nC - Determines gate drive power requirement; supports efficient 100–500 kHz switching in synchronous buck stages. |
| ID (Cont) @ TC=25°C | 60 A - Continuous current rating under heatsinked conditions; validated per JEDEC JESD51-2. |
| RthJC (Max) | 1.2 °C/W - Junction-to-case thermal resistance; enables >80 W power dissipation with modest heatsinking. |
| Body Diode VSD | 0.68 V typ. @ IS = 5 A - Low forward drop reduces power loss during freewheeling in H-bridge motor drives. |
Pinout & Package
Package: PowerPAK® SO-8 Single - leadless, surface-mount package with same 5.15 mm × 6.15 mm footprint as standard SO-8, featuring exposed drain terminals on the bottom side for enhanced thermal conduction. Height: 1.04 mm nominal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Eight drain terminals (including bottom-side exposed pad) provide low-inductance, high-current return path to PCB ground plane. |
| G (Pin 1 top-side marking) | Gate (G) | Single gate terminal located at corner; requires <2 Ω series resistance to damp ringing due to low gate resistance (0.3–2 Ω). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 1.45 mΩ RDS(on) in SO-8 footprint-3× lower than conventional SO-8 MOSFETs at same voltage rating. |
| 100 % Rg tested | Guarantees gate resistance between 0.3 Ω and 2.0 Ω, ensuring predictable turn-on/turn-off timing and EMI control. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 31.2 mJ single-pulse avalanche energy. |
| PowerPAK SO-8 thermal design | Exposes drain metal on bottom side for direct PCB copper contact, achieving 0.9 °C/W typical RthJC-matching DPAK performance. |
| Pb-free & halogen-free | Complies with JEDEC JS709A and RoHS Directive 2011/65/EU; suitable for automotive and industrial end-equipment. |
Applications
| Motor Control | Industrial Load Switch |
|---|---|
Use Scenario: High-current H-bridge driver in 24 V BLDC motor controllers for factory automation. IC Role / Device Role / Timing Role: Low-side and high-side synchronous rectifier with 60 A peak current capability and sub-2 mΩ on-resistance. Use Value: Reduces conduction loss by >40 % vs. legacy SO-8 MOSFETs, enabling smaller heatsinks and higher power density. |
Use Scenario: Hot-swap and inrush current limiting in programmable logic controller (PLC) backplanes. IC Role / Device Role / Timing Role: Main power FET controlling 24–48 V supply rail with fast turn-on (<30 ns td(on)) and controlled slew rate. Use Value: Supports 100 % duty-cycle operation with 6.25 W ambient-rated power dissipation, eliminating need for external current sense. |
| ORing Circuit | DC-DC Converter Sync Rectifier |
Use Scenario: Redundant 12 V power supply ORing in telecom shelf management units. IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET replacing Schottky diodes; body diode used during reverse bias. Use Value: Cuts forward voltage drop from 0.45 V (Schottky) to 0.68 V (body diode), reducing heat generation by 30 % at 30 A. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter. IC Role / Device Role / Timing Role: Fast-recovery body diode (38 ns trr) and low Qgd (43.3 nC) enable precise gate timing control at 300 kHz. Use Value: Achieves >96 % efficiency at full load by minimizing switching and conduction losses simultaneously. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Same PowerPAK SO-8 package; higher VDS (40 V), higher RDS(on) (2.2 mΩ @ 10 V), lower ID (50 A) | Better suited for 36 V nominal systems requiring higher voltage margin; less optimal for 24 V high-current loads | Select when system bus voltage exceeds 30 V or transient immunity >36 V is required. |
| IRF7470PBF | Standard SO-8 package; 30 V VDS, 2.4 mΩ RDS(on) @ 10 V, 52 A ID, no bottom-side thermal pad | Higher thermal resistance (16 °C/W RthJA vs. 20 °C/W max for SIR812DP); unsuitable for sustained >20 A operation | Acceptable only in low-duty-cycle, low-power applications where PCB space is constrained but thermal headroom exists. |
Compared with SiR872DP-T1-GE3, SIR812DP-T1-GE3 offers lower on-resistance and higher current rating for 24 V systems, while IRF7470PBF lacks the thermal advantages of PowerPAK construction-making SIR812DP-T1-GE3 the preferred choice for thermally demanding, high-efficiency load switching.
Availability
SIR812DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial motor control, PLC power distribution, telecom ORing circuits, and high-efficiency DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for SIR812DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR812DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, low-voltage power conversion and load switching where thermal performance and gate-drive compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SIR812DP-T1-GE3 at 70 °C case temperature?
The SIR812DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is validated under JEDEC JESD51-2 conditions with 1" × 1" FR4 board mounting.
Does SIR812DP-T1-GE3 require a heatsink in typical 24 V motor control applications?
SIR812DP-T1-GE3 does not require an external heatsink when mounted on ≥1 in² of 2 oz copper on a 4-layer PCB with internal ground/power planes. Its 0.9 °C/W RthJC and exposed drain pad enable sufficient heat transfer to the board, supporting 60 A operation at TC ≤ 70 °C without added thermal mass.
Can SIR812DP-T1-GE3 be used with 3.3 V logic-level gate drive?
No-SIR812DP-T1-GE3 has a gate threshold voltage range of 1.0–2.3 V but requires ≥4.5 V gate drive to achieve its specified RDS(on) of 2.00 mΩ. At 3.3 V, RDS(on) increases significantly (>5 mΩ), causing excessive conduction loss; a gate driver or level shifter is required for 3.3 V MCU interfaces.
What is the avalanche energy rating of SIR812DP-T1-GE3, and how is it tested?
SIR812DP-T1-GE3 is rated for 31.2 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating reflects its ability to absorb inductive energy during unclamped switching events without failure, and every unit undergoes 100 % UIS testing during production.
Is SIR812DP-T1-GE3 compatible with standard SO-8 PCB footprints?
Yes-SIR812DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 5.15 mm × 6.15 mm outline and pin spacing as standard SO-8. It mounts directly onto existing SO-8 land patterns, though optimal thermal performance requires extending the drain pad area per Vishay Application Note AN826.
SIR812DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.45mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 335 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10240 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR812DP-T1-GE3 FAQ
1.How can I place an order for SIR812DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR812DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR812DP-T1-GE3 reliable?
The price and inventory of SIR812DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR812DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR812DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR812DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR812DP-T1-GE3?
SIR812DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR812DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR812DP-T1-GE3?
For technical support, including SIR812DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR812DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR812DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR812DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR812DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR812DP-T1-GE3?
All SIR812DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR812DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR812DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR812DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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