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Vishay Siliconix SIR814DP-T1-GE3
- Part No.:
- SIR814DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR814DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,110
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Product details
Overview
SIR814DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) = 0.0021 Ω at VGS = 10 V and 27 nC total gate charge. It serves as a high-efficiency synchronous rectifier in DC/DC converters and point-of-load (POL) regulators.
For engineers reviewing the SIR814DP-T1-GE3 datasheet, SIR814DP-T1-GE3 pinout, SIR814DP-T1-GE3 application, or SIR814DP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V drive, 100 % UIS testing, halogen-free and RoHS-compliant construction, and thermal resistance RthJC = 0.9 °C/W for high-power-density board designs.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction and switching losses in high-frequency synchronous buck topologies. Its gate threshold voltage (VGS(th) = 1.0–2.3 V) and low Qg (27 nC @ 4.5 V) enable robust operation with standard 3.3 V or 5 V gate drivers.
The device integrates a fast body diode with trr = 68 ns (typ.) and Qrr = 65 nC, supporting zero-voltage switching (ZVS) transitions in resonant converters. Thermal design is supported by a low junction-to-case resistance (0.9 °C/W) and validated soldering profile up to 260 °C peak for leadless PowerPAK® SO-8 mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages |
| RDS(on) | 0.0021 Ω @ VGS = 10 V - Enables <1 W conduction loss at 60 A in POL applications |
| ID (continuous) | 60 A @ TC = 25 °C - Package-limited rating suitable for high-current output rails |
| Qg | 27 nC @ VGS = 4.5 V - Supports efficient switching with low-voltage gate drivers |
| RthJC | 0.9 °C/W - Allows direct heatsinking to PCB copper or external metal core |
| trr | 68 ns (typ.) - Reduces reverse recovery loss in synchronous rectification |
| VGS(th) | 1.0–2.3 V - Ensures turn-on compatibility with standard logic-level controllers |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm. Thermal performance relies on soldered drain pad area for heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Internally connected to exposed copper paddle - primary thermal and current path |
| 5 | Gate (G) | Control terminal requiring <27 nC charge for full enhancement |
| 6, 7, 8 | Source (S) | Return path for load current; referenced to driver ground in synchronous rectifier layout |
Key Features
| Feature | Design Value |
|---|---|
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress without external snubbers |
| TrenchFET® architecture | Delivers lowest RDS(on) × Qg figure of merit (0.056 Ω·nC) in 40 V SO-8 class |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC for green manufacturing |
| Low Qg at 4.5 V | Enables use with 3.3 V microcontroller GPIO or dedicated low-voltage gate drivers |
| Exposed drain paddle | Provides <0.9 °C/W junction-to-case thermal path for high-power density layouts |
Applications
| Server VRM | Industrial DC/DC Converter |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 90 %. Use Value: 0.0021 Ω RDS(on) cuts I²R loss by >40 % vs. typical 40 V Schottky, enabling higher power density and lower thermal footprint. | Use Scenario: 48 V to 12 V isolated DC/DC module in factory automation PLCs and motor drives. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: Fast 68 ns body diode recovery supports ZVS operation, reducing EMI and improving light-load efficiency. |
| Point-of-Load Regulator | Intermediate Bus Converter |
Use Scenario: Compact 12 V to 1.2 V step-down regulator directly adjacent to FPGA or ASIC. IC Role / Device Role / Timing Role: High-side or low-side switch in integrated power stage or discrete POL design. Use Value: 27 nC Qg at 4.5 V allows clean switching with minimal gate drive loss, critical for sub-100 ns dead-time control. | Use Scenario: 48 V to 12 V non-isolated bus converter feeding multiple downstream POLs in telecom equipment. IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in interleaved buck configuration. Use Value: 60 A continuous rating and 0.9 °C/W RthJC support >100 W per phase without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8721PBF | RDS(on) = 0.0027 Ω @ 4.5 V; Qg = 33 nC; TO-220AB package | Larger footprint and higher thermal resistance (RthJC = 2.5 °C/W); requires heatsink | Select when through-hole mounting or legacy TO-220 layout is required; not drop-in for PowerPAK® SO-8 |
| SiR872DP-T1-GE3 | RDS(on) = 0.0018 Ω @ 10 V; Qg = 32 nC; same PowerPAK® SO-8 package | Lower RDS(on) but higher Qg increases switching loss at >500 kHz; identical pinout | Prefer for ultra-low conduction loss priority; verify gate driver capability for higher Qg |
Compared with SIR814DP-T1-GE3, IRL8721PBF trades compactness and thermal performance for through-hole compatibility, while SiR872DP-T1-GE3 offers lower RDS(on) at the cost of increased switching loss-making SIR814DP-T1-GE3 optimal for balanced high-frequency POL efficiency.
Availability
SIR814DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and point-of-load regulators requiring stable component supply, halogen-free compliance, and high-current synchronous rectification capability.
Supply support for SIR814DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and green manufacturing.
The SiR814DP product line delivers high-current, low-RDS(on) TrenchFET® MOSFETs in compact PowerPAK® packages for next-generation DC/DC conversion in computing, industrial, and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for SIR814DP-T1-GE3?
The SIR814DP-T1-GE3 is rated for 60 A continuous drain current at case temperature TC = 25 °C, limited by package thermal capacity. At TC = 70 °C, the rating remains 60 A, while ambient-referenced ratings drop to 40.6 A at TA = 25 °C and 32.5 A at TA = 70 °C per the datasheet's absolute maximum ratings table. Derating curves confirm this package-limited behavior.
Does SIR814DP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, the SIR814DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 0.0029 Ω (max) at ID = 20 A and VGS = 4.5 V, with Qg = 27 nC (typ.). Its VGS(th) range of 1.0–2.3 V ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, making it suitable for controller ICs without dedicated high-side gate boosters.
What is the thermal resistance from junction to case (RthJC) for SIR814DP-T1-GE3?
The SIR814DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 0.9 °C/W under steady-state conditions, with a maximum of 1.2 °C/W. This value is measured from junction to the exposed drain paddle and enables effective heat transfer to PCB copper or external heatsinks-critical for high-current POL and VRM designs where thermal management is constrained.
Is SIR814DP-T1-GE3 suitable for synchronous rectification in DC/DC converters?
Yes, the SIR814DP-T1-GE3 is explicitly designed and qualified for synchronous rectification. Its low RDS(on), fast body diode (trr = 68 ns typ., Qrr = 65 nC), and 100 % UIS testing ensure robust performance in buck, forward, and LLC topologies. Vishay's application notes confirm its use in 48 V–12 V and 12 V–1.2 V synchronous rectifier stages with efficiency gains over Schottky alternatives.
What does the "-GE3" suffix indicate in SIR814DP-T1-GE3?
The "-GE3" suffix in SIR814DP-T1-GE3 denotes Vishay's green, lead (Pb)-free, and halogen-free packaging per IEC 61249-2-21 and RoHS Directive 2002/95/EC. It specifies that the device uses matte tin plating on terminals and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, with peak reflow temperature rated to 260 °C for leadless PowerPAK® SO-8 mounting.
SIR814DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3800 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR814DP-T1-GE3 FAQ
1.How can I place an order for SIR814DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR814DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR814DP-T1-GE3 reliable?
The price and inventory of SIR814DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR814DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR814DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR814DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR814DP-T1-GE3?
SIR814DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR814DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR814DP-T1-GE3?
For technical support, including SIR814DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR814DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR814DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR814DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR814DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR814DP-T1-GE3?
All SIR814DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR814DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR814DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR814DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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