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Vishay Siliconix SIR818DP-T1-GE3
- Part No.:
- SIR818DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR818DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,055
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Product details
Overview
SIR818DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering 50 A continuous drain current at TC = 25 °C, RDS(on) = 2.8 mΩ at VGS = 10 V, and 30.5 nC total gate charge - optimized for low-side switching in high-efficiency DC/DC converters used in notebook PCs and server POL applications.
For engineers reviewing the SIR818DP-T1-GE3 datasheet, SIR818DP-T1-GE3 pinout, SIR818DP-T1-GE3 application, or SIR818DP-T1-GE3 equivalent, key selection criteria include its 30 V VDS, ultra-low RDS(on) at 4.5 V and 10 V drive, 100 % Rg and UIS tested reliability, halogen-free and RoHS-compliant construction, and thermal performance matching DPAK-level junction-to-case resistance (1.2 °C/W typical).
Technical Context
This MOSFET employs trench-based silicon architecture with optimized cell pitch and gate oxide design to achieve sub-3 mΩ on-resistance while maintaining robust avalanche capability (EAS = 125 mJ). Its gate charge profile (Qg = 30.5 nC @ 4.5 V) supports fast switching in synchronous buck topologies with minimal driver loss.
The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to PCB copper, enabling junction-to-case thermal resistance of 1.2 °C/W - identical to DPAK - while retaining standard SO-8 footprint compatibility and eliminating leadframe thermal bottlenecks inherent in traditional SO-8 packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) @ VGS = 10 V | 2.8 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current POL stages. |
| RDS(on) @ VGS = 4.5 V | 3.3 mΩ - Ensures stable operation with 5 V or logic-level gate drivers in compact designs. |
| ID (continuous, TC = 25 °C) | 50 A - Supports high-current output stages without external heatsinking when mounted on ≥1 in² copper. |
| Qg (total gate charge) | 30.5 nC @ 4.5 V - Low drive energy requirement reduces gate driver power loss and EMI during hard switching. |
| RthJC (junction-to-case) | 1.2 °C/W typical - Matches DPAK thermal performance, enabling direct replacement in thermally constrained layouts. |
| EAS | 125 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients in DC/DC converters. |
Pinout & Package
PowerPAK® SO-8 is a leadless, surface-mount package with 8 terminals arranged in standard SO-8 footprint (6.15 mm × 5.15 mm), featuring exposed copper drain pads on the bottom for enhanced thermal transfer. The package is halogen-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; low input capacitance (Ciss = 3660 pF) minimizes Miller effect. |
| 2 (S) | Source | Reference node for gate drive; connected to power ground plane; low-inductance layout essential for stability. |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching speed. |
| 4 (S) | Source | Third source connection; provides additional low-impedance return path for high di/dt currents. |
| 5 (D) | Drain | Main power output node; tied internally to bottom-side exposed copper pad for thermal and electrical conduction. |
| 6 (D) | Drain | Second drain connection; electrically and thermally tied to Pin 5 and bottom pad for current sharing. |
| 7 (D) | Drain | Third drain connection; enhances current handling and thermal spreading across PCB copper area. |
| 8 (D) | Drain | Fourth drain connection; completes symmetric drain layout for balanced current distribution and reduced parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Delivers 2.8 mΩ RDS(on) at 10 V in SO-8 footprint - 40 % lower than prior-gen equivalents, reducing conduction loss in high-current POLs. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress - critical for reliable server VRM operation. |
| PowerPAK® SO-8 package | Provides DPAK-equivalent thermal resistance (1.2 °C/W) in SO-8 outline, enabling drop-in thermal upgrade without board redesign. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for environmentally regulated computing and telecom equipment. |
| Low Qgd/Qg ratio | Qgd = 9.6 nC / Qg = 30.5 nC ≈ 0.31 - suppresses Miller-induced shoot-through in synchronous rectification, improving efficiency above 500 kHz. |
Applications
| Server POL Converter | Notebook PC VRM |
|---|---|
Use Scenario: High-current point-of-load converter supplying CPU core voltage (0.8–1.3 V) from 12 V input in 1U rack servers. IC Role / Device Role: Low-side synchronous rectifier MOSFET in multiphase buck converter, conducting up to 50 A per phase with minimal conduction loss. Use Value: 2.8 mΩ RDS(on) at 10 V enables <0.5 W loss at 15 A, directly improving system efficiency and reducing thermal load on adjacent components. | Use Scenario: Compact, high-density VRM on thin-and-light notebook motherboard powering GPU or SoC at ≤1 V with tight transient response. IC Role / Device Role: Low-side switch operating with 5 V gate drive in 300–600 kHz buck stage, leveraging low Qg for fast turn-on/turn-off. Use Value: 30.5 nC Qg at 4.5 V reduces gate driver power consumption by ~35 % vs. legacy SO-8 MOSFETs, easing thermal management in space-constrained layouts. |
| ORing FET for Hot-Swap | Industrial DC/DC Module |
Use Scenario: Redundant 12 V power rail ORing application in telecom shelf where back-to-back MOSFETs prevent reverse current during hot-swap events. IC Role / Device Role: Single N-channel MOSFET configured as ideal diode with external gate control, replacing Schottky diodes to eliminate forward voltage drop. Use Value: 0.71 V body diode forward voltage (VSD) at 4 A and low RDS(on) cut conduction loss by >60 % vs. 0.45 V Schottky, improving power budget in dual-rail systems. | Use Scenario: Isolated 24 V to 5 V DC/DC module for industrial PLC I/O modules requiring high reliability and extended temperature operation. IC Role / Device Role: Low-side switch in primary-side active clamp or secondary-side synchronous rectifier, operating continuously at TJ up to 125 °C. Use Value: RDS(on) increase normalized to 1.4× at 125 °C (vs. 25 °C) ensures predictable loss rise - verified across -55 °C to 150 °C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 3.2 mΩ @ 10 V; Qg = 27.5 nC; same PowerPAK SO-8 package and pinout. | Slightly higher conduction loss but lower gate charge - better suited for very high-frequency (>1 MHz) POLs where switching loss dominates. | Select SiR872DP-T1-GE3 when optimizing for gate drive efficiency over absolute lowest RDS(on). |
| IRF7478PBF | Standard SO-8 package; RDS(on) = 3.8 mΩ @ 10 V; RthJC = 16 °C/W - 13× worse thermal resistance than SIR818DP-T1-GE3. | Not suitable for high-current or thermally dense layouts; requires significant PCB copper or heatsinking to match SIR818DP-T1-GE3 thermal performance. | Choose IRF7478PBF only for cost-sensitive, low-power (<10 A) applications where thermal headroom is abundant. |
Compared with SiR872DP-T1-GE3 and IRF7478PBF, SIR818DP-T1-GE3 delivers the lowest RDS(on) in its class with DPAK-matching thermal resistance - making it optimal for high-current, space-constrained POL and server VRM designs where conduction loss and junction temperature are limiting factors.
Availability
SIR818DP-T1-GE3 is available at Aetrix Electronics and suitable for server power delivery, notebook VRMs, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR818DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR818DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III Power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power systems where low RDS(on) and superior thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for SIR818DP-T1-GE3 at 70 °C case temperature?
The SIR818DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area under the exposed drain pad to maintain junction temperature ≤150 °C.
Does SIR818DP-T1-GE3 support logic-level gate drive?
Yes, SIR818DP-T1-GE3 is fully compatible with logic-level gate drive: its RDS(on) is specified at 3.3 mΩ @ VGS = 4.5 V, and gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.4 V, ensuring robust turn-on with standard 5 V microcontroller or PWM controller outputs.
What is the thermal resistance from junction to ambient for SIR818DP-T1-GE3 on a standard 1" x 1" FR4 board?
On a 1" x 1" FR4 board, the SIR818DP-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 19 °C/W and a maximum of 24 °C/W, as measured under standard test conditions (Note b in datasheet). Performance improves significantly with added copper area or multilayer boards.
Is SIR818DP-T1-GE3 suitable for ORing applications, and what body diode characteristics support this use?
Yes, SIR818DP-T1-GE3 is well-suited for ORing due to its low VSD (0.71 V typical at 4 A) and fast body diode recovery (trr = 29 ns typical). These parameters minimize forward conduction loss and reverse recovery spikes when used as an ideal diode in redundant power systems.
How does the PowerPAK® SO-8 package of SIR818DP-T1-GE3 differ from standard SO-8 in terms of thermal performance and layout compatibility?
The PowerPAK® SO-8 package of SIR818DP-T1-GE3 retains full pinout and footprint compatibility with standard SO-8 but replaces leads with exposed copper drain pads on the bottom. This yields RthJC = 1.2 °C/W - matching DPAK - versus 16 °C/W for standard SO-8, enabling direct thermal upgrade without PCB redesign.
SIR818DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3660 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR818DP-T1-GE3 FAQ
1.How can I place an order for SIR818DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR818DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR818DP-T1-GE3 reliable?
The price and inventory of SIR818DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR818DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR818DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR818DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR818DP-T1-GE3?
SIR818DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR818DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR818DP-T1-GE3?
For technical support, including SIR818DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR818DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR818DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR818DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR818DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR818DP-T1-GE3?
All SIR818DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR818DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR818DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR818DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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