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Vishay Siliconix SIR820DP-T1-GE3
- Part No.:
- SIR820DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR820DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,013
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Product details
Overview
SIR820DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 3.0 mΩ at VGS = 10 V and 3.8 mΩ at VGS = 4.5 V, used as low-side switch in DC/DC converters for notebook PCs, graphics cards, and server power stages.
For engineers reviewing the SIR820DP-T1-GE3 datasheet, SIR820DP-T1-GE3 pinout, SIR820DP-T1-GE3 application, or SIR820DP-T1-GE3 equivalent, key selection criteria include its 3.0 mΩ on-resistance at 10 V gate drive, 28.6 nC total gate charge, 70 °C/W maximum junction-to-ambient thermal resistance (t ≤ 10 s), robust 100 % Rg and UIS testing, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching in synchronous buck converters. Its gate threshold voltage (1.2–2.4 V) enables reliable turn-on with 4.5 V logic-level drive, and its low Qgd (7.3 nC typ.) supports fast, low-loss switching transitions.
The device integrates a robust body diode with 0.74–1.1 V forward voltage at 5 A and 15–30 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Thermal design leverages the exposed drain pad of the leadless PowerPAK SO-8 package, achieving 3.5 °C/W typical junction-to-case resistance for direct board-level heat sinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages |
| RDS(on) @ VGS = 10 V | 3.0 mΩ - Enables <1 W conduction loss at 18 A in high-efficiency low-side switch applications |
| RDS(on) @ VGS = 4.5 V | 3.8 mΩ - Supports logic-level gate drive without level-shifting in compact portable power designs |
| Qg | 28.6 nC (typ.) - Determines gate driver power requirement and switching loss trade-off at 500 kHz–1 MHz |
| ID (TC = 25 °C) | 40 A - Continuous current rating under heatsink-mounted conditions, suitable for >100 W point-of-load rails |
| RthJC | 3.5 °C/W (typ.) - Enables direct thermal coupling to PCB copper, reducing die temperature rise vs. standard SO-8 |
| UIS Tested | 100 % production tested - Guarantees ruggedness against inductive switching stress in real-world converter layouts |
Pinout & Package
Package: PowerPAK® SO-8 - leadless, surface-mount package with same 6.15 mm × 5.15 mm footprint and pinout as standard SO-8, featuring exposed drain pad on bottom for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with 0.2–1.3 Ω gate resistance - sets Miller charge control and switching speed stability |
| 6, 7, 8 | Drain (D) | Three large-area drain terminals connected to exposed bottom pad - primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers lowest RDS(on) per die area among Vishay's 30 V SO-8 footprint MOSFETs, enabling higher power density |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche energy handling (20 mJ) without derating in unclamped inductive loads |
| PowerPAK SO-8 package | Provides DPAK-equivalent thermal resistance (3.5 °C/W) in SO-8 footprint - eliminates need for layout redesign |
| Low Qgd / Qg ratio | 0.255 (7.3/28.6) - minimizes Miller-induced shoot-through risk and improves controllability in high-frequency sync-buck |
| Body diode trr | 15–30 ns - reduces reverse recovery losses and EMI in hard-switched converters operating up to 1 MHz |
Applications
| Server VRM Low-Side Switch | Notebook CPU Core Supply |
|---|---|
Use Scenario: High-current, high-efficiency 3-phase buck converter supplying 1–2 V @ 100+ A to modern server CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 40 A peak current capability. Use Value: 3.0 mΩ RDS(on) limits conduction loss to <1.5 W at full load, while PowerPAK thermal design maintains TJ < 125 °C without external heatsink. |
Use Scenario: Compact dual-phase buck regulator powering mobile CPU cores in ultrathin notebooks with strict height constraints. IC Role / Device Role / Timing Role: Logic-level (4.5 V) low-side switch enabling direct PWM controller interface and minimizing gate drive complexity. Use Value: 3.8 mΩ RDS(on) at 4.5 V ensures <1.2 W loss at 18 A, and 1.27 mm package height fits sub-3 mm system stack-ups. |
| GPU Power Delivery | Industrial DC/DC Module |
Use Scenario: Multi-phase 12 V input to 0.8–1.2 V output converter for discrete graphics processing units requiring transient response < 1 μs. IC Role / Device Role / Timing Role: Low-inductance, low-RDS(on) low-side FET placed adjacent to controller for minimal loop area and optimal dv/dt immunity. Use Value: Four-source-pin configuration reduces source inductance by ~40 % vs. single-source SO-8, improving switching waveform fidelity and reducing EMI filtering burden. |
Use Scenario: Isolated 48 V to 12 V intermediate bus converter in industrial PLC or motor drive systems with extended ambient temperature range. IC Role / Device Role / Timing Role: Primary low-side switch in non-isolated secondary-side regulation stage, operating continuously at TA = 70 °C. Use Value: Rated 18.7 A at TA = 70 °C with 22–27 °C/W RthJA ensures stable operation without forced air, supporting fanless enclosure designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR822DP-T1-GE3 | Higher RDS(on): 3.3 mΩ @ 10 V; identical PowerPAK SO-8 package and pinout | Slightly lower current capability (38 A vs. 40 A) but same thermal and layout compatibility | Select when marginally higher on-resistance is acceptable for cost optimization in mid-power designs |
| IRLHS6342TRPBF | Different package (PowerPAIR® 3.3 × 3.3 mm); RDS(on) = 3.2 mΩ @ 4.5 V; Qg = 22 nC | Smaller footprint and lower gate charge, but requires new PCB layout and has lower ID rating (30 A) | Prefer for space-constrained portable designs where gate drive efficiency outweighs layout reuse needs |
Compared with SIR820DP-T1-GE3, SiR822DP-T1-GE3 offers identical mechanical fit with minor conduction loss trade-off, while IRLHS6342TRPBF sacrifices layout compatibility for size and gate-drive efficiency - making SIR820DP-T1-GE3 optimal for high-current, drop-in SO-8 footprint upgrades.
Availability
SIR820DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU core supplies, GPU power delivery, and industrial DC/DC modules requiring stable component supply across multi-year production cycles.
Supply support for SIR820DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR820DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in computing and communications infrastructure where thermal density and layout reuse are critical.
FAQ
What is the maximum continuous drain current rating for SIR820DP-T1-GE3 at 70 °C case temperature?
The SIR820DP-T1-GE3 is rated for 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under heatsink-cooled conditions and is validated by 100 % UIS and Rg production testing. The value remains unchanged from the TC = 25 °C rating due to thermal design headroom in the PowerPAK SO-8 construction.
Does SIR820DP-T1-GE3 support logic-level gate drive, and what is its guaranteed RDS(on) at 4.5 V?
Yes, SIR820DP-T1-GE3 supports logic-level gate drive with a gate threshold voltage range of 1.2–2.4 V and guaranteed RDS(on) of 3.8 mΩ maximum at VGS = 4.5 V and ID = 10 A. This enables direct interfacing with 3.3 V or 5 V PWM controllers without gate drivers in space-constrained applications like notebook CPU VRMs.
Is SIR820DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs, and what mechanical changes are required?
Yes, SIR820DP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm footprint and pinout as standard SO-8 devices. No PCB layout changes are needed - it mounts directly to existing SO-8 land patterns. The only difference is the exposed drain pad on the bottom, which enhances thermal performance without altering top-side routing.
What is the total gate charge (Qg) specification for SIR820DP-T1-GE3, and how does it impact switching loss?
The SIR820DP-T1-GE3 has a typical total gate charge (Qg) of 28.6 nC at VDS = 15 V, VGS = 10 V, and ID = 10 A. This value determines gate driver power consumption and contributes directly to switching loss; at 1 MHz operation, it results in ~286 μW of gate drive loss per MHz, making it suitable for high-frequency synchronous buck converters where driver efficiency is critical.
How is thermal performance of SIR820DP-T1-GE3 characterized, and what is its junction-to-case resistance?
The SIR820DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 3.5 °C/W under steady-state conditions, measured from die junction to the exposed drain pad. This value enables direct thermal coupling to PCB copper planes, delivering DPAK-level cooling in an SO-8 footprint - verified by thermal transient impedance curves and comparative testing on 4-layer FR-4 boards.
SIR820DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3512 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 37.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR820DP-T1-GE3 FAQ
1.How can I place an order for SIR820DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR820DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR820DP-T1-GE3 reliable?
The price and inventory of SIR820DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR820DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR820DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR820DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR820DP-T1-GE3?
SIR820DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR820DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR820DP-T1-GE3?
For technical support, including SIR820DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR820DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR820DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR820DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR820DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR820DP-T1-GE3?
All SIR820DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR820DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR820DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR820DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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