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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR826ADP-T1-GE3

Name: SIR826ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR826ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR826ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR826ADP-T1-GE3.pdf

Description:: MOSFET N-CH 80V 60A PPAK SO-8

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Product details

Overview

SIR826ADP-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 single package, with R_DS(on) = 4.6 mΩ at V_GS = 10 V, 20 A, and Q_g = 57 nC (typ.), optimized for primary-side switching and synchronous rectification in high-efficiency DC/AC inverters.

For engineers reviewing the SIR826ADP-T1-GE3 datasheet, SIR826ADP-T1-GE3 pinout, SIR826ADP-T1-GE3 application, or SIR826ADP-T1-GE3 equivalent, key selection criteria include its 80 V V_DS, low 0.0046 Ω on-resistance at 10 V gate drive, 60 A continuous drain current capability at T_C = 25 °C, robust 100% R_g and UIS tested qualification, and thermal performance matching DPAK via PowerPAK SO-8 footprint compatibility.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and high figure-of-merit (Q_g × R_DS(on)). Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.8 V, enabling reliable turn-on with standard 4.5 V–10 V logic-level drivers. The device supports fast switching with t_d(on) = 9 ns and t_f = 7 ns (V_GEN = 10 V, R_g = 1 Ω).

Thermally, it features a junction-to-case (drain) resistance of 0.9 °C/W (typ.) and is rated for operation from −55 °C to +150 °C. The PowerPAK SO-8 package exposes the drain pad on the bottom surface, providing a direct low-impedance thermal path to the PCB, with thermal performance equivalent to DPAK while maintaining SO-8 footprint compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage for primary-side switch or synchronous rectifier in 48 V–60 V bus systems
R_DS(on) max	5.5 mΩ at V_GS = 10 V, I_D = 20 A - Enables <1.1 W conduction loss at 20 A, critical for high-current power stages
I_D continuous	60 A at T_C = 25 °C - Supports high-power output without external heatsink when mounted on adequate copper area
Q_g typ.	57 nC - Determines gate drive power requirement and switching speed; enables efficient operation at 100–500 kHz
R_thJC	0.9 °C/W (typ.) - Allows ~55 W power dissipation before reaching 150 °C junction limit with 25 °C case temperature
V_GS(th)	1.2–2.8 V - Ensures clean turn-on with 3.3 V or 5 V microcontroller GPIOs and avoids false triggering
C_iss	2800 pF - Impacts gate drive loop stability and Miller effect; requires careful gate resistor selection for EMI control

Pinout & Package

PowerPAK® SO-8 single package: 5.15 mm × 6.15 mm footprint, leadless construction with exposed drain pad on bottom surface; compatible with standard SO-8 land patterns but optimized with extended drain copper for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5	Gate (G)	Single gate input; low 0.95 Ω typical gate resistance minimizes ringing and simplifies driver design
6, 7, 8, D-pad	Drain (D)	Eight-terminal drain connection plus bottom-exposed copper pad provides ultra-low thermal resistance and high-current capacity

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced switching + conduction losses in high-frequency SMPS
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
PowerPAK SO-8 package	Provides DPAK-equivalent thermal performance (R_thJC = 0.9 °C/W) in SO-8 footprint-no PCB redesign needed for upgrade
Lead (Pb)-free and Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing
Body diode t_rr	53 ns (typ.) - Enables efficient synchronous rectification with low reverse recovery loss in LLC and phase-shifted full-bridge topologies

Applications

Primary Side Switching	Synchronous Rectification
Use Scenario: High-efficiency isolated DC/DC converters (e.g., telecom 48 V input, 12 V output) using flyback or forward topology. IC Role / Device Role: Primary-side power switch handling full input voltage and high peak currents during PWM on-time. Use Value: Low 5.5 mΩ R_DS(on) reduces conduction loss; fast 9 ns turn-on delay supports >300 kHz operation without excessive switching loss.	Use Scenario: Secondary-side rectification in server PSU or industrial AC/DC adapters to replace Schottky diodes. IC Role / Device Role: Synchronous rectifier controlled by gate driver IC or controller's SR signal to minimize forward voltage drop. Use Value: 0.73 V body diode V_SD and 53 ns t_rr enable low-loss commutation; 60 A rating supports multi-phase parallel configurations.
DC/AC Inverters	Motor Drive Half-Bridge
Use Scenario: Grid-tied solar microinverters or UPS inverters converting 40–80 V DC to 120/230 V AC. IC Role / Device Role: High-side or low-side switch in H-bridge or three-phase inverter leg operating at 16–20 kHz PWM. Use Value: 80 V V_DS withstands bus transients; 100 A pulsed current rating handles motor startup surges and fault conditions.	Use Scenario: Brushless DC motor drives in HVAC blowers or industrial pumps requiring compact, thermally efficient half-bridge modules. IC Role / Device Role: Low-side switch in discrete half-bridge stage, paired with complementary high-side MOSFET or gate driver. Use Value: Four-source-pin layout lowers source inductance, improving shoot-through immunity and reducing gate oscillation risk.

Primary Side Switching

Synchronous Rectification

Use Scenario: High-efficiency isolated DC/DC converters (e.g., telecom 48 V input, 12 V output) using flyback or forward topology.

IC Role / Device Role: Primary-side power switch handling full input voltage and high peak currents during PWM on-time.

Use Value: Low 5.5 mΩ R_DS(on) reduces conduction loss; fast 9 ns turn-on delay supports >300 kHz operation without excessive switching loss.

Use Scenario: Secondary-side rectification in server PSU or industrial AC/DC adapters to replace Schottky diodes.

IC Role / Device Role: Synchronous rectifier controlled by gate driver IC or controller's SR signal to minimize forward voltage drop.

Use Value: 0.73 V body diode V_SD and 53 ns t_rr enable low-loss commutation; 60 A rating supports multi-phase parallel configurations.

DC/AC Inverters

Motor Drive Half-Bridge

Use Scenario: Grid-tied solar microinverters or UPS inverters converting 40–80 V DC to 120/230 V AC.

IC Role / Device Role: High-side or low-side switch in H-bridge or three-phase inverter leg operating at 16–20 kHz PWM.

Use Value: 80 V V_DS withstands bus transients; 100 A pulsed current rating handles motor startup surges and fault conditions.

Use Scenario: Brushless DC motor drives in HVAC blowers or industrial pumps requiring compact, thermally efficient half-bridge modules.

IC Role / Device Role: Low-side switch in discrete half-bridge stage, paired with complementary high-side MOSFET or gate driver.

Use Value: Four-source-pin layout lowers source inductance, improving shoot-through immunity and reducing gate oscillation risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872ADP-T1-GE3	Higher V_DS = 100 V; R_DS(on) = 6.2 mΩ @ 10 V; Q_g = 62 nC - trade-off between voltage margin and conduction loss	Better suited for 72 V battery systems or higher bus transient environments where 80 V margin is insufficient	Select when system bus voltage exceeds 65 V or transient clamping headroom is critical
IRF7470PBF	SO-8 package; V_DS = 80 V; R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 42 nC - lower gate charge but higher on-resistance and inferior thermal R_thJC = 3.0 °C/W	Acceptable for lower-power (<30 A) or space-constrained designs where thermal budget allows higher junction rise	Choose only if legacy SO-8 layout must be retained and power dissipation remains below 15 W

Compared with SiR872ADP-T1-GE3, SIR826ADP-T1-GE3 offers lower conduction loss and better thermal efficiency for 48–60 V systems; versus IRF7470PBF, it delivers 25% lower R_DS(on) and 3× better junction-to-case thermal resistance-enabling higher current density without derating.

Availability

SIR826ADP-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, synchronous rectification, and DC/AC inverter applications requiring stable component supply, high-reliability automotive-grade qualification, and long-term production continuity.

Supply support for SIR826ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR826ADP product line is designed for high-current, high-frequency power conversion in industrial, telecom, and renewable energy systems-specifically targeting replacement of larger packages (DPAK, TO-220) with SO-8-compatible, thermally enhanced alternatives.

FAQ

What is the maximum continuous drain current rating for SIR826ADP-T1-GE3 at 70 °C case temperature?

The SIR826ADP-T1-GE3 supports 60 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects its robust PowerPAK SO-8 thermal design, which maintains low junction-to-case resistance (0.9 °C/W typ.) even at elevated temperatures-making SIR826ADP-T1-GE3 suitable for high-power-density applications where ambient or board temperature rises significantly during operation.

Does SIR826ADP-T1-GE3 support 4.5 V gate drive for full enhancement?

Yes, SIR826ADP-T1-GE3 is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 6.2 mΩ (typ.) and 8.7 mΩ (max.) at I_D = 15 A. Its gate threshold voltage range of 1.2–2.8 V ensures reliable turn-on with standard 3.3 V or 4.5 V logic-level controllers, and the low V_GS(th) tolerance prevents unintended conduction during low-voltage start-up sequences in SIR826ADP-T1-GE3-based power supplies.

How does the PowerPAK SO-8 package of SIR826ADP-T1-GE3 improve thermal performance over standard SO-8?

The PowerPAK SO-8 package of SIR826ADP-T1-GE3 exposes the drain pad on the bottom surface, creating a direct thermal path to the PCB with R_thJC = 0.9 °C/W (typ.), versus ~16 °C/W for standard SO-8. This 17× improvement enables SIR826ADP-T1-GE3 to dissipate up to 104 W at T_C = 25 °C-matching DPAK performance while retaining SO-8 footprint compatibility and eliminating need for mechanical heatsinks in many applications.

Is SIR826ADP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIR826ADP-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low 0.73 V body diode forward voltage (V_SD), 53 ns typical reverse recovery time (t_rr), and 65 nC typical reverse recovery charge (Q_rr). These parameters minimize dead-time conduction loss and reduce EMI generation during zero-voltage switching transitions-key advantages confirmed in Vishay's application note AN821 for SIR826ADP-T1-GE3 in high-frequency rectifier roles.

What is the total gate charge (Q_g) specification for SIR826ADP-T1-GE3 at V_GS = 7.5 V?

The total gate charge (Q_g) for SIR826ADP-T1-GE3 is 42 nC (typ.) and 63 nC (max.) at V_GS = 7.5 V, V_DS = 40 V, and I_D = 20 A. This value directly determines gate driver power consumption and switching transition times; using this Q_g figure ensures accurate calculation of required gate drive strength and timing margins in SIR826ADP-T1-GE3-based half-bridge or full-bridge designs operating at 200–500 kHz.

SIR826ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR826ADP-T1-GE3 FAQ

1.How can I place an order for SIR826ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR826ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR826ADP-T1-GE3 reliable?

The price and inventory of SIR826ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR826ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR826ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR826ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR826ADP-T1-GE3?

SIR826ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR826ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR826ADP-T1-GE3?

For technical support, including SIR826ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR826ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIR826ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR826ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR826ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR826ADP-T1-GE3?

All SIR826ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR826ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR826ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR826ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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