My Inquiry
My Account
Vishay Siliconix SIR836DP-T1-GE3
- Part No.:
- SIR836DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR836DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 21A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,425
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR836DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 21 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0190 Ω at VGS = 10 V and 0.0225 Ω at VGS = 4.5 V. It delivers low gate charge (5.8 nC typ. at 4.5 V), supports synchronous rectification in POL converters, and features 100 % Rg and UIS testing.
For engineers reviewing the SIR836DP-T1-GE3 datasheet, SIR836DP-T1-GE3 pinout, SIR836DP-T1-GE3 application, or SIR836DP-T1-GE3 equivalent, this page provides verified thermal resistance values (RthJC = 6.4 °C/W), body diode characteristics (VSD = 0.77 V at IS = 3 A), avalanche rating (IAS = 10 A), SO-8 footprint compatibility, and PowerPAK-specific mounting guidance for PCB layout and thermal design.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low RDS(on) and fast switching with Qg = 5.8 nC (VGS = 4.5 V) and trr = 15 ns (IF = 5 A, di/dt = 100 A/μs). Its gate threshold voltage (VGS(th) = 1.2–2.5 V) enables 4.5 V logic-level drive, and its 40 V VDS rating targets point-of-load and intermediate bus applications.
The PowerPAK SO-8 package provides DPAK-equivalent thermal performance (RthJC = 6.4 °C/W) in an SO-8 footprint, with exposed drain pads on the bottom side for direct board heat sinking. The device is lead (Pb)-free and halogen-free, qualified per JEDEC JESD22-A110 and JESD22-A108 reliability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V and 24 V input POL stages |
| RDS(on) max @ VGS = 10 V | 0.0190 Ω - Enables <1.9 W conduction loss at 10 A, critical for high-efficiency DC/DC conversion |
| RDS(on) max @ VGS = 4.5 V | 0.0225 Ω - Supports direct drive from 3.3 V or 5 V controllers without level-shifting |
| Qg typ. @ VGS = 4.5 V | 5.8 nC - Low gate charge reduces driver power and switching losses in high-frequency (>500 kHz) operation |
| ID continuous @ TC = 25 °C | 21 A - Sustains full load in compact 1–2 phase POL modules with adequate heatsinking |
| RthJC | 6.4 °C/W - Junction-to-case thermal resistance enables efficient heat transfer to PCB copper or heatsink |
| VSD @ IS = 3 A | 0.77 V - Low source-drain diode forward voltage minimizes reverse recovery losses in synchronous rectification |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, SO-8 footprint, exposed drain pad on bottom side; dimensions: 6.15 mm × 5.15 mm × 1.04 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to large copper area for thermal conduction and low-inductance power return path |
| Gate (G) | Control input | Single gate terminal (pin 1 top view per datasheet diagram) accepts standard PWM gate drive signals |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.0190 Ω RDS(on) at 10 V in SO-8 footprint-2× lower on-resistance than legacy SO-8 MOSFETs |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and unclamped inductive switching stress in real-world POL layouts |
| PowerPAK SO-8 package | Delivers DPAK-level thermal performance (RthJC = 6.4 °C/W) while maintaining SO-8 land pattern compatibility |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C material compliance requirements |
| Low Qgd / Qg ratio | Qgd = 2.1 nC / Qg = 5.8 nC → ~36 % - Reduces Miller-induced switching delay and improves hard-switching EMI behavior |
Applications
| Server Point-of-Load Converter | Industrial DC/DC Module |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion in CPU/GPU VRMs with >500 kHz switching frequency. IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier MOSFET, driven by multiphase controller ICs (e.g., ISL63xx, IR35xx series). Use Value: 0.0225 Ω RDS(on) at 4.5 V enables >95 % efficiency at 20 A output; low Qg minimizes gate driver losses and improves transient response. |
Use Scenario: Compact 24 V input isolated/non-isolated DC/DC module for PLC I/O and motor control subsystems. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or secondary-side synchronous rectifier in LLC resonant converter. Use Value: 40 V VDS and 10 A TA rating support 24 V nominal inputs with margin; RthJC = 6.4 °C/W allows derating to 17 A at TC = 70 °C without external heatsink. |
| Telecom Base Station PSU | Automotive ADAS Power Supply |
|
Use Scenario: Intermediate bus converter (48 V → 12 V) in distributed telecom power architecture with strict thermal constraints. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 200–300 kHz. Use Value: 15 ns trr and 7.5 nC Qrr minimize body diode conduction loss during dead-time; 100 % UIS tested withstands transformer leakage energy spikes. |
Use Scenario: 12 V → 3.3 V/5 V power rail generation for radar sensor ECUs and camera modules in ASIL-B systems. IC Role / Device Role / Timing Role: Low-voltage synchronous buck converter switch, controlled by automotive-grade PMIC (e.g., TPS65381A). Use Value: -55 °C to +150 °C TJ range meets AEC-Q101 stress test requirements; Pb-free/halogen-free construction satisfies automotive material compliance mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 0.0145 Ω @ 10 V (23 % lower); Qg = 7.5 nC @ 4.5 V (30 % higher); same PowerPAK SO-8 package | Better conduction loss but higher switching loss - preferred in <300 kHz, high-current POL where thermal headroom is limited | Select SiR872DP-T1-GE3 when minimizing RDS(on) dominates over gate drive loss; verify gate driver capability for higher Qg. |
| IRF7470PBF | Standard SO-8 (not PowerPAK); RDS(on) = 0.023 Ω @ 10 V; RthJC = 16 °C/W (2.5× worse); same VDS and ID ratings | Higher junction temperature rise under identical PCB layout - requires larger copper area or heatsink to match SIR836DP-T1-GE3 thermal performance | Choose IRF7470PBF only if legacy SO-8 land pattern reuse is mandatory and thermal margin exists; avoid in space-constrained designs. |
Compared with SiR872DP-T1-GE3, SIR836DP-T1-GE3 trades 23 % higher RDS(on) for 30 % lower Qg-favoring high-frequency, gate-drive-limited designs. Against IRF7470PBF, it delivers 2.5× better thermal resistance in identical footprint, enabling smaller PCB area and higher power density without layout change.
Availability
SIR836DP-T1-GE3 is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, and telecom base station power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIR836DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR836DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing and communications infrastructure.
FAQ
What is the maximum continuous drain current for SIR836DP-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SIR836DP-T1-GE3 is 17 A when the case temperature (TC) is maintained at 70 °C. This rating is specified in the Absolute Maximum Ratings table and reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures. Designers must ensure proper PCB copper area and airflow to sustain this current without exceeding TJ = 150 °C.
Does SIR836DP-T1-GE3 support 3.3 V gate drive in practice?
SIR836DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.2 V to 2.5 V and RDS(on) = 0.0225 Ω at VGS = 4.5 V, but it is not fully enhanced at 3.3 V. At VGS = 3.3 V, RDS(on) rises significantly (typ. ~0.035 Ω per characteristic curves), increasing conduction loss. For reliable 3.3 V logic-level operation, consider Vishay's SiR830DP-T1-GE3 (VGS(th) max = 1.8 V, RDS(on) = 0.028 Ω @ 3.3 V).
How does the PowerPAK SO-8 package of SIR836DP-T1-GE3 improve thermal performance versus standard SO-8?
The PowerPAK SO-8 package of SIR836DP-T1-GE3 achieves RthJC = 6.4 °C/W-over 2.5× better than standard SO-8 (16 °C/W)-by exposing the drain pad on the bottom surface for direct thermal coupling to PCB copper. This eliminates thermal bottlenecks through leads and enables die temperatures within ~2 °C of board temperature, unlike standard SO-8 which exhibits >40 °C rise under identical 2.7 W dissipation.
Is SIR836DP-T1-GE3 suitable for synchronous rectification in LLC resonant converters?
Yes, SIR836DP-T1-GE3 is well-suited for synchronous rectification in LLC resonant converters due to its low VSD = 0.77 V (at IS = 3 A), fast trr = 15 ns, and low Qrr = 7.5 nC. These parameters minimize body diode conduction loss and reverse recovery stress during zero-voltage switching transitions, especially in secondary-side 12 V or 5 V output stages.
What is the recommended reflow profile for SIR836DP-T1-GE3?
The recommended lead-free reflow profile for SIR836DP-T1-GE3 follows JEDEC J-STD-020: peak temperature of 255 °C (±0 °C tolerance), time above 217 °C of 60–150 s, ramp-up rate ≤3 °C/s, and ramp-down rate ≤6 °C/s. Full details-including preheat, soak, and cooling zones-are specified in Vishay document 73257 and validated for PowerPAK SO-8 reliability.
SIR836DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.9W (Ta), 15.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR836DP-T1-GE3 FAQ
1.How can I place an order for SIR836DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR836DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR836DP-T1-GE3 reliable?
The price and inventory of SIR836DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR836DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR836DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR836DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR836DP-T1-GE3?
SIR836DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR836DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR836DP-T1-GE3?
For technical support, including SIR836DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR836DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR836DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR836DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR836DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR836DP-T1-GE3?
All SIR836DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR836DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR836DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR836DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR836DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
