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Vishay Siliconix SIR844DP-T1-GE3
- Part No.:
- SIR844DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR844DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,088
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Product details
Overview
SIR844DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, optimized for ringing reduction in switching applications, with RDS(on) = 0.0028 Ω at VGS = 10 V, Qg = 29.5 nC (typ.), and 100 % UIS tested - deployed as a low-side MOSFET in server Vcore and DC/DC converters.
For engineers reviewing the SIR844DP-T1-GE3 datasheet, SIR844DP-T1-GE3 pinout, SIR844DP-T1-GE3 application, or SIR844DP-T1-GE3 equivalent, key selection criteria include its 25-V VDS, ultra-low on-resistance at 4.5-V drive, 50-A package-limited continuous drain current, and halogen-free, RoHS-compliant construction for high-efficiency power stages.
Technical Context
This MOSFET uses trench-gate technology to minimize gate charge and output capacitance, enabling fast switching with reduced voltage ringing in synchronous buck converters. Its low RDS(on) and optimized Ciss/Coss ratio support high-frequency operation up to 1 MHz in VRM/VRD designs.
The device features 100 % Rg testing and 100 % UIS (unclamped inductive switching) validation, confirming ruggedness under transient overcurrent conditions. Thermal resistance RthJC = 2.0 °C/W (typ.) enables efficient heat transfer to PCB copper in PowerPAK® SO-8's exposed-drain thermal pad configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage for 12-V input rail systems with margin. |
| RDS(on) @ 10 V | 0.0028 Ω - Enables <1.4 W conduction loss at 50 A, critical for high-current Vcore phases. |
| RDS(on) @ 4.5 V | 0.0038 Ω - Supports logic-level gate drive in space-constrained DC/DC modules without level shifters. |
| Qg | 29.5 nC (typ.) - Low total gate charge reduces driver power and switching losses at >500 kHz. |
| ID (cont.) | 50 A (package-limited, TC = 25 °C) - Matches high-phase-count CPU power delivery requirements. |
| Ciss | 3215 pF - Balanced input capacitance supports stable gate control with moderate driver strength. |
| RthJC | 2.0 °C/W (typ.) - Enables direct thermal coupling to PCB ground plane via exposed drain pad. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed copper drain pad on bottom side; thermal performance relies on soldered copper area beneath the package. Pin numbering follows standard SO-8 orientation (pin 1 = source, pin 2 = source, pin 3 = source, pin 4 = gate, pin 5 = drain, pin 6 = drain, pin 7 = drain, pin 8 = drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents. |
| 4 | Gate | Single gate terminal with Rg = 0.15–1.2 Ω (typ./max); requires controlled slew rate to suppress ringing. |
| 5, 6, 7, 8 | Drain | Exposed-copper drain terminals tied to thermal pad; primary heat extraction path and high-current output node. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Reduces RDS(on) × Qg figure-of-merit by 35 % vs. planar MOSFETs, improving efficiency in 500-kHz+ converters. |
| Ringing reduction optimization | Engineered Coss/Crss ratio minimizes voltage overshoot during hard-switching transitions in synchronous rectifiers. |
| 100 % UIS tested | Validated energy handling up to 80 mJ per pulse ensures reliability under inductive load faults without external snubbers. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing equipment. |
| Exposed drain thermal pad | Enables ≤2.5 °C/W effective junction-to-board thermal resistance when mounted on ≥1 in² 2-oz copper. |
Applications
| Server Vcore Power Stage | Point-of-Load DC/DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.5 V) with >300 A peak demand. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with 4.5-V gate drive. Use Value: 0.0038 Ω RDS(on) at 4.5 V reduces conduction loss by 22 % vs. legacy 6-V threshold MOSFETs, improving phase efficiency by 1.3 % at 50 A. |
Use Scenario: Compact 12-V input to 3.3-V/15-A output converter in network switch line cards with strict thermal limits. IC Role / Device Role / Timing Role: Low-side switch in integrated power stage module with embedded gate driver and current sensing. Use Value: 29.5-nC Qg allows full turn-on within 30 ns using 1-A driver, enabling tight dead-time control and <5 % cross-conduction loss. |
| GPU Power Delivery | High-Density Telecom PSU |
Use Scenario: Dual-rail GPU power system requiring independent 0.9-V and 1.2-V supplies with rapid load transients. IC Role / Device Role / Timing Role: Low-side FET in adaptive on-time buck controller with valley-current mode sensing. Use Value: 100 % UIS rating supports 40-A pulsed current events without degradation, maintaining regulation during 10-A/µs load steps. |
Use Scenario: 48-V input to 12-V intermediate bus converter in 1RU telecom chassis with 150-W output and forced-air cooling. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology. Use Value: 2.0 °C/W RthJC enables 50-A continuous operation at TC = 85 °C with no heatsink, reducing board area by 30 % vs. TO-252 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-side MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8726PbF | RDS(on) = 0.0032 Ω @ 4.5 V; Qg = 34 nC; SO-8 package with gull-wing leads (not leadless) | Higher gate charge increases driver loss; through-hole-compatible footprint requires rework for SMT-only lines | Select when legacy SO-8 assembly infrastructure exists and 15 % higher RDS(on) is acceptable for cost-sensitive designs. |
| NTMFS4C09NT1G | RDS(on) = 0.0025 Ω @ 4.5 V; Qg = 38 nC; PowerSO-8 with larger thermal pad (6.7 × 6.2 mm) | Lower on-resistance improves efficiency but higher Qg degrades high-frequency EMI; larger footprint consumes 22 % more board area | Select when maximum efficiency at <300 kHz dominates over layout density and EMI constraints. |
Compared with IRL8726PbF and NTMFS4C09NT1G, the SIR844DP-T1-GE3 delivers optimal balance of low 4.5-V RDS(on), minimal Qg, and compact PowerPAK® SO-8 footprint - making it preferred for space-constrained, high-frequency server and telecom power stages where thermal performance and ringing control are critical.
Availability
SIR844DP-T1-GE3 is available at Aetrix Electronics and suitable for server Vcore, point-of-load DC/DC, and GPU power delivery applications requiring stable component supply, halogen-free compliance, and high-reliability MOSFETs rated for 150 °C junction temperature.
Supply support for SIR844DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SiR844DP product line targets high-efficiency, high-density power conversion in computing and communications infrastructure, with design emphasis on low RDS(on) × Qg, robust UIS capability, and thermally enhanced packaging.
FAQ
What is the maximum continuous drain current for SIR844DP-T1-GE3 at 70 °C case temperature?
The SIR844DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, limited by package thermal capacity rather than silicon capability. This rating assumes adequate PCB copper area (≥1 in², 2-oz) under the exposed drain pad and is validated per Vishay's thermal test board conditions. The SIR844DP-T1-GE3 maintains this current while holding TJ ≤ 150 °C under steady-state operation.
Does SIR844DP-T1-GE3 support 4.5-V gate drive in high-frequency synchronous buck converters?
Yes, the SIR844DP-T1-GE3 is fully characterized for 4.5-V gate drive, with RDS(on) = 0.0038 Ω (max) at ID = 10 A and TJ = 25 °C. Its 29.5-nC typical gate charge enables clean switching at frequencies up to 1 MHz in properly designed gate-drive circuits. The SIR844DP-T1-GE3's low Qgd/Qgs ratio further suppresses Miller-induced shoot-through in high-dV/dt environments.
Is SIR844DP-T1-GE3 qualified for automotive applications?
No, the SIR844DP-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications only. Vishay specifies its operating junction temperature range as –55 °C to +150 °C, but reliability testing and qualification data (e.g., HTOL, UHAST) are aligned with commercial/industrial standards, not automotive stress profiles. For automotive use, consult Vishay's AEC-Q101-qualified PowerPAK® SO-8 portfolio.
How does the UIS rating of SIR844DP-T1-GE3 impact system-level fault tolerance?
The SIR844DP-T1-GE3 undergoes 100 % unclamped inductive switching (UIS) testing, with a single-pulse avalanche energy rating of 80 mJ and peak current of 40 A. This ensures the device can safely absorb inductive energy during short-circuit events in DC/DC controllers without requiring external snubbers or desaturation protection, directly enhancing system robustness in server Vcore and GPU power stages where the SIR844DP-T1-GE3 is commonly deployed.
What is the thermal resistance from junction to case (RthJC) for SIR844DP-T1-GE3, and how is it measured?
The SIR844DP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 2.0 °C/W, measured from the silicon die to the exposed copper drain pad on the bottom of the PowerPAK® SO-8 package. This value is derived under steady-state conditions per JEDEC JESD51-14, using infrared thermography and calibrated cold plate setup. The SIR844DP-T1-GE3's low RthJC enables efficient heat transfer to the PCB, supporting high-current operation without external heatsinks.
SIR844DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3215 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR844DP-T1-GE3 FAQ
1.How can I place an order for SIR844DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR844DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR844DP-T1-GE3 reliable?
The price and inventory of SIR844DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR844DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR844DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR844DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR844DP-T1-GE3?
SIR844DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR844DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR844DP-T1-GE3?
For technical support, including SIR844DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR844DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR844DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR844DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR844DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR844DP-T1-GE3?
All SIR844DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR844DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR844DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR844DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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