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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR846ADP-T1-GE3

Name: SIR846ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR846ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR846ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR846ADP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 60A PPAK SO-8

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Product details

Overview

SIR846ADP-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 60 A (T_C = 25 °C) TrenchFET® power MOSFET in PowerPAK® SO-8 package, featuring R_DS(on) = 7.8 mΩ at V_GS = 10 V and Q_g = 26.7 nC (V_GS = 4.5 V), optimized for primary-side switching in isolated DC/DC converters.

For engineers reviewing the SIR846ADP-T1-GE3 datasheet, SIR846ADP-T1-GE3 pinout, SIR846ADP-T1-GE3 application, or SIR846ADP-T1-GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.0 °C/W), avalanche energy rating (E_AS = 80 mJ), body diode recovery (t_rr = 47 ns), gate charge profile, and PowerPAK SO-8 land pattern compatibility with standard SO-8 footprints.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) while maintaining robust UIS and 100 % R_g testing per production lot. Its 100 V V_DS rating supports flyback and forward converter topologies operating up to 400 V DC bus with margin.

The PowerPAK SO-8 package integrates a thermally enhanced drain-exposed copper pad with SO-8 footprint compatibility, delivering DPAK-equivalent junction-to-case thermal resistance (1.0 °C/W) without requiring PCB redesign - critical for space-constrained industrial and telecom power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 400 V DC-link applications with 4× safety margin against transients
R_DS(on) max @ V_GS = 10 V	7.8 mΩ - Enables <1.2 W conduction loss at 40 A continuous drain current
Q_g typ. @ V_GS = 4.5 V	26.7 nC - Reduces gate drive power and enables efficient operation with low-voltage controllers (e.g., 5 V logic)
I_D continuous @ T_C = 25 °C	60 A - Rated for high-current primary-side switch in 300–500 W isolated DC/DC modules
R_thJC max.	1.5 °C/W - Allows direct thermal coupling to heatsink or copper pour; enables >50 W dissipation with modest heatsinking
E_AS	80 mJ - Withstands single-pulse inductive energy during hard-switching events without failure
t_rr (body diode)	47 ns - Minimizes reverse recovery losses in synchronous rectification and bridge configurations

Pinout & Package

Package: PowerPAK® SO-8 (leadless, SO-8 footprint compatible, drain-exposed bottom pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); thermal pad on underside provides primary heat path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals + exposed bottom copper pad form low-inductance, low-resistance power return path to PCB ground plane
G (Pin 1 of top view, labeled "G")	Gate (G)	Single gate terminal with R_g = 0.3–2 Ω - optimized for fast turn-on/turn-off with minimal ringing under 1 Ω external gate resistor

Key Features

Feature	Design Value
TrenchFET® process	Delivers 7.8 mΩ R_DS(on) in SO-8 footprint - 40 % lower on-resistance than comparable planar SO-8 MOSFETs at same voltage rating
100 % R_g and UIS tested	Ensures gate robustness and avalanche reliability across full production lot - eliminates need for system-level stress screening
PowerPAK SO-8 package	Provides DPAK-level thermal performance (R_thJC = 1.0 °C/W) in SO-8 outline - enables drop-in replacement without layout change
Low Q_gd/Q_g ratio	9.2 nC / 26.7 nC = 0.34 - improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk in half-bridge designs
Body diode t_rr = 47 ns	Reduces switching loss and voltage overshoot during commutation in LLC and phase-shifted full-bridge topologies

Applications

Primary-Side Switch in Flyback Converters	Isolated DC/DC Converter Primary Switch
Use Scenario: High-efficiency 65–300 W offline flyback power supply for industrial control systems with universal AC input (85–265 V_AC). IC Role / Device Role: Main switching element handling full primary current and voltage stress; operates in discontinuous conduction mode (DCM) at 65–130 kHz. Use Value: 7.8 mΩ R_DS(on) minimizes conduction loss at peak currents up to 45 A; 80 mJ E_AS withstands transformer leakage energy during MOSFET turn-off.	Use Scenario: 48 V input, 12 V output isolated DC/DC module for telecom base station power distribution. IC Role / Device Role: Primary-side switch in active-clamp forward topology; subjected to repetitive 100 V drain spikes and 50 A pulsed current. Use Value: 1.0 °C/W R_thJC enables stable 60 A operation at T_C = 70 °C; low Q_g allows clean 100 kHz switching with 5 V gate driver.
Full-Bridge Primary Switch	High-Density Server PSU Primary Switch
Use Scenario: 1 kW full-bridge DC/DC stage in modular UPS system with 380 V DC bus and SiC secondary-side rectification. IC Role / Device Role: High-side and low-side switch in symmetrical full-bridge; requires matched R_DS(on) and fast body diode for ZVS transition. Use Value: 47 ns t_rr and low Q_rr (64 nC) minimize dead-time losses and voltage spike during zero-voltage switching; four-source-pin layout reduces common-source inductance.	Use Scenario: 80 PLUS Titanium-rated 1.5 kW server power supply using interleaved PFC + LLC resonant conversion. IC Role / Device Role: Primary switch in LLC half-bridge resonant tank; operates at 200–500 kHz with high dv/dt and di/dt stress. Use Value: Low C_iss (2350 pF) and Cr_ss/C_iss ratio (2.5 %) reduce capacitive losses; PowerPAK thermal design sustains 150 °C junction temperature under sustained 40 A RMS load.

Primary-Side Switch in Flyback Converters

Isolated DC/DC Converter Primary Switch

Use Scenario: High-efficiency 65–300 W offline flyback power supply for industrial control systems with universal AC input (85–265 V_AC).

IC Role / Device Role: Main switching element handling full primary current and voltage stress; operates in discontinuous conduction mode (DCM) at 65–130 kHz.

Use Value: 7.8 mΩ R_DS(on) minimizes conduction loss at peak currents up to 45 A; 80 mJ E_AS withstands transformer leakage energy during MOSFET turn-off.

Use Scenario: 48 V input, 12 V output isolated DC/DC module for telecom base station power distribution.

IC Role / Device Role: Primary-side switch in active-clamp forward topology; subjected to repetitive 100 V drain spikes and 50 A pulsed current.

Use Value: 1.0 °C/W R_thJC enables stable 60 A operation at T_C = 70 °C; low Q_g allows clean 100 kHz switching with 5 V gate driver.

Full-Bridge Primary Switch

High-Density Server PSU Primary Switch

Use Scenario: 1 kW full-bridge DC/DC stage in modular UPS system with 380 V DC bus and SiC secondary-side rectification.

IC Role / Device Role: High-side and low-side switch in symmetrical full-bridge; requires matched R_DS(on) and fast body diode for ZVS transition.

Use Value: 47 ns t_rr and low Q_rr (64 nC) minimize dead-time losses and voltage spike during zero-voltage switching; four-source-pin layout reduces common-source inductance.

Use Scenario: 80 PLUS Titanium-rated 1.5 kW server power supply using interleaved PFC + LLC resonant conversion.

IC Role / Device Role: Primary switch in LLC half-bridge resonant tank; operates at 200–500 kHz with high dv/dt and di/dt stress.

Use Value: Low C_iss (2350 pF) and Cr_ss/C_iss ratio (2.5 %) reduce capacitive losses; PowerPAK thermal design sustains 150 °C junction temperature under sustained 40 A RMS load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872ADP-T1-GE3	R_DS(on) = 5.2 mΩ @ 10 V; higher Q_g = 44 nC; same PowerPAK SO-8 package	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz), higher-current applications	Select when minimizing conduction loss dominates over switching loss - e.g., high-duty-cycle forward converters
IRF540NPBF	TO-220 package; R_DS(on) = 44 mΩ @ 10 V; no UIS rating; R_thJC = 1.5 °C/W	Larger footprint, higher thermal resistance, and no avalanche qualification - requires heatsink and layout revision	Only consider for cost-sensitive, low-volume legacy designs where SO-8 footprint is not required and thermal budget permits

Compared with SiR872ADP-T1-GE3, SIR846ADP-T1-GE3 trades 33 % higher R_DS(on) for 40 % lower Q_g, enabling superior efficiency in medium-frequency (100–300 kHz) resonant topologies; versus IRF540NPBF, it delivers 82 % lower on-resistance and 3× better thermal resistance in a surface-mount package requiring no mechanical mounting hardware.

Availability

SIR846ADP-T1-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC/DC modules, and server PSUs requiring stable component supply, long-term lifecycle support, and Pb-free/halogen-free compliance.

Supply support for SIR846ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIR846ADP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency primary-side switching in isolated power conversion systems demanding low R_DS(on), fast switching, and robust avalanche capability.

FAQ

What is the maximum continuous drain current for SIR846ADP-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SIR846ADP-T1-GE3 is 58.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal management per Vishay Application Note AN821. The device maintains its 7.8 mΩ R_DS(on) performance up to 150 °C junction temperature, making SIR846ADP-T1-GE3 suitable for thermally constrained environments where case temperature exceeds ambient by >45 °C.

Does SIR846ADP-T1-GE3 support gate drive from a 5 V microcontroller?

Yes, SIR846ADP-T1-GE3 is fully compatible with 5 V gate drive: its gate threshold voltage V_GS(th) is specified from 1.8 V to 3.0 V, and R_DS(on) remains low (9.5 mΩ max) even at V_GS = 6 V. At 5 V, typical R_DS(on) is ~10.2 mΩ - sufficient for many medium-power applications. For optimal efficiency, use V_GS ≥ 7.5 V, where R_DS(on) drops to ≤8.5 mΩ. The 26.7 nC Q_g at 4.5 V ensures fast switching with standard logic-level drivers.

Can SIR846ADP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SIR846ADP-T1-GE3 uses the PowerPAK® SO-8 package with identical 6.15 mm × 5.15 mm footprint and pinout as standard SO-8 - enabling true drop-in replacement without PCB modification. Its drain-exposed bottom pad mates directly with standard SO-8 land patterns (per Vishay AN826), and thermal performance exceeds standard SO-8 by >10×. However, ensure no traces run beneath the package body, as the PowerPAK sits flush on the board - unlike leaded SO-8 which has air gap clearance.

What is the significance of the "100 % R_g and UIS tested" specification for SIR846ADP-T1-GE3?

"100 % R_g and UIS tested" means every production unit undergoes individual gate resistance measurement and unclamped inductive switching stress test - verifying gate integrity and avalanche energy handling (E_AS = 80 mJ) before shipment. This eliminates batch-level sampling and guarantees that each SIR846ADP-T1-GE3 can safely absorb worst-case inductive energy without degradation, critical for reliability in flyback and forward converters where transformer leakage causes repetitive UIS events.

How does the body diode performance of SIR846ADP-T1-GE3 impact its use in synchronous rectification?

The body diode of SIR846ADP-T1-GE3 features t_rr = 47 ns (typical) and Q_rr = 64 nC, enabling efficient commutation in synchronous rectifier configurations. Its low V_SD = 0.75 V (at I_S = 5 A) reduces forward conduction loss during dead time, while fast recovery minimizes voltage overshoot and EMI. In LLC or phase-shifted full-bridge topologies, this allows tighter dead-time control and higher overall efficiency - especially when paired with low-Q_g gate drive to minimize cross-conduction risk.

SIR846ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR846ADP-T1-GE3 FAQ

1.How can I place an order for SIR846ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR846ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR846ADP-T1-GE3 reliable?

The price and inventory of SIR846ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR846ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR846ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR846ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR846ADP-T1-GE3?

SIR846ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR846ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR846ADP-T1-GE3?

For technical support, including SIR846ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR846ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIR846ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR846ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR846ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR846ADP-T1-GE3?

All SIR846ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR846ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR846ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR846ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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