Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR846ADP-T1-RE3

Name: SIR846ADP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR846ADP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR846ADP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR846ADP-T1-RE3.pdf

Description:: MOSFET N-CH 100V 60A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,526

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR846ADP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 60 A (T_C = 25 °C) TrenchFET® power MOSFET in PowerPAK® SO-8 package, featuring R_DS(on) = 7.8 mΩ at V_GS = 10 V and Q_g = 26.7 nC - optimized for primary-side switching in isolated DC/DC converters and full-bridge topologies.

For engineers reviewing the SIR846ADP-T1-RE3 datasheet, SIR846ADP-T1-RE3 pinout, SIR846ADP-T1-RE3 application, or SIR846ADP-T1-RE3 equivalent, this device delivers high-current capability with low conduction loss, fast switching dynamics (t_d(off) ≤ 55 ns), and robust avalanche energy rating (E_AS = 80 mJ), supporting high-efficiency, space-constrained power designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and high gate charge efficiency. Its 100 V V_DS rating supports operation across wide-input industrial and telecom DC/DC stages, while its 60 A continuous drain current (at T_C = 25 °C) enables high-power density without external heatsinking in moderate thermal environments.

The PowerPAK SO-8 package provides a junction-to-case thermal resistance of 1.0–1.5 °C/W and integrates an exposed drain pad for direct board-level heat sinking - delivering DPAK-equivalent thermal performance within standard SO-8 footprint compatibility, confirmed by Vishay's AN821 thermal characterization.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 85 V DC in isolated flyback or forward converters with margin.
R_DS(on) max @ V_GS = 10 V	7.8 mΩ - enables <1.2 W conduction loss at 40 A, critical for >95% efficiency targets.
I_D continuous @ T_C = 25 °C	60 A - allows single-device implementation in 300–500 W primary-side switch applications.
Q_g typ. @ V_GS = 4.5 V	26.7 nC - balances gate drive strength and switching speed for 100–500 kHz operation.
E_AS	80 mJ - withstands single-pulse inductive energy during hard-switching or fault transients.
R_thJC max.	1.5 °C/W - ensures junction temperature rise ≤ 90 °C under 60 W dissipation with minimal heatsink.
V_GS(th)	1.8–3.0 V - compatible with standard 5 V or 3.3 V gate drivers without level-shifting.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, 5.15 mm × 6.15 mm, 1.04 mm height), with exposed drain pad on bottom side for thermal conduction. Compatible with standard SO-8 land patterns per Vishay AN821 and Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain configuration maximizes copper area for thermal spreading and low R_DS(on) path.
Gate (G)	Gate (G)	Single gate terminal (Pin 1 not used as gate; G is Pin 3 per top-view diagram) - requires <2 Ω gate resistor to control dV/dt and ringing.

Key Features

Feature	Design Value
TrenchFET® process	Enables 7.8 mΩ R_DS(on) at 100 V - 30% lower than comparable planar MOSFETs in same package.
100 % R_g and UIS tested	Guarantees gate resistance consistency and unclamped inductive switching ruggedness per JEDEC JESD22-A115.
PowerPAK SO-8 thermal design	Junction-to-case R_thJC = 1.0 °C/W - matches DPAK performance while retaining SO-8 PCB layout compatibility.
Body diode t_rr	47–90 ns - supports synchronous rectification and ZVS-assisted topologies with low reverse recovery loss.

Applications

Isolated DC/DC Converters	Full-Bridge Inverters
Use Scenario: Primary-side switch in 48 V–60 V input telecom or server PSUs with 300–600 W output. IC Role / Device Role / Timing Role: High-side main switch operating at 100–300 kHz with hard-switched PWM control. Use Value: Low R_DS(on) and Q_g minimize total switching + conduction losses, enabling >96% peak efficiency at full load.	Use Scenario: Leg switch in 1 kW industrial motor drive half-bridge module or solar microinverter H-bridge stage. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switch handling bidirectional current and voltage reversal. Use Value: 80 mJ E_AS and 200 A I_DM support reliable operation under short-circuit and shoot-through fault conditions.
Primary-Side LLC Resonant Controllers	High-Density AC/DC Adapters
Use Scenario: Upper switch in asymmetric half-bridge LLC resonant converter for laptop or workstation adapters. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted high-frequency switch with body diode commutation. Use Value: 47 ns t_rr and low Q_rr (64–122 nC) reduce dead-time loss and improve ZVS envelope at light loads.	Use Scenario: Main switch in compact 65 W GaN-assisted or standalone high-density USB-C PD adapters. IC Role / Device Role / Timing Role: Space-constrained, thermally demanding primary switch requiring minimal PCB area. Use Value: PowerPAK SO-8 footprint fits SO-8 layouts while delivering DPAK-level thermal performance - no redesign needed.

Isolated DC/DC Converters

Full-Bridge Inverters

Use Scenario: Primary-side switch in 48 V–60 V input telecom or server PSUs with 300–600 W output.

IC Role / Device Role / Timing Role: High-side main switch operating at 100–300 kHz with hard-switched PWM control.

Use Value: Low R_DS(on) and Q_g minimize total switching + conduction losses, enabling >96% peak efficiency at full load.

Use Scenario: Leg switch in 1 kW industrial motor drive half-bridge module or solar microinverter H-bridge stage.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switch handling bidirectional current and voltage reversal.

Use Value: 80 mJ E_AS and 200 A I_DM support reliable operation under short-circuit and shoot-through fault conditions.

Primary-Side LLC Resonant Controllers

High-Density AC/DC Adapters

Use Scenario: Upper switch in asymmetric half-bridge LLC resonant converter for laptop or workstation adapters.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted high-frequency switch with body diode commutation.

Use Value: 47 ns t_rr and low Q_rr (64–122 nC) reduce dead-time loss and improve ZVS envelope at light loads.

Use Scenario: Main switch in compact 65 W GaN-assisted or standalone high-density USB-C PD adapters.

IC Role / Device Role / Timing Role: Space-constrained, thermally demanding primary switch requiring minimal PCB area.

Use Value: PowerPAK SO-8 footprint fits SO-8 layouts while delivering DPAK-level thermal performance - no redesign needed.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872ADP-T1-RE3	R_DS(on) = 5.2 mΩ @ 10 V; higher Q_g = 44 nC; same PowerPAK SO-8 package.	Better conduction loss but slower switching - suited for <200 kHz fixed-frequency converters where efficiency > speed.	Select SiR872ADP-T1-RE3 when minimizing conduction loss dominates over gate drive loss and EMI constraints.
IRF540NPBF	TO-220 package; R_DS(on) = 44 mΩ @ 10 V; 33 A I_D; no avalanche rating specified.	Larger footprint, higher thermal resistance (R_thJC ≈ 1.5 °C/W but R_thJA > 60 °C/W), limited to lower-power or forced-air-cooled use.	Choose IRF540NPBF only for legacy TO-220 designs or cost-sensitive prototyping where thermal margin is ample.

Compared with SiR872ADP-T1-RE3, SIR846ADP-T1-RE3 trades 2.6 mΩ higher R_DS(on) for 17.3 nC lower Q_g, favoring high-frequency operation; versus IRF540NPBF, it delivers 5.7× lower R_DS(on) and 1.8× higher current in 1/5 the footprint - making it superior for modern high-density, high-efficiency power stages.

Availability

SIR846ADP-T1-RE3 is available at Aetrix Electronics and suitable for isolated DC/DC converters, full-bridge inverters, and primary-side LLC resonant controllers requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SIR846ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The SIR846ADP-T1-RE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered for high-current, high-voltage switching in space-constrained power supplies and motor drives - prioritizing low R_DS(on), fast switching, and DPAK-class thermal behavior in SO-8-compatible form.

FAQ

What is the maximum continuous drain current rating for SIR846ADP-T1-RE3 at 70 °C case temperature?

The SIR846ADP-T1-RE3 supports 58.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual board layout and ambient conditions. The 60 A rating applies strictly at T_C = 25 °C.

Does SIR846ADP-T1-RE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIR846ADP-T1-RE3 has a single-pulse avalanche energy rating of 80 mJ (E_AS) with L = 0.1 mH, verified per JEDEC JESD22-A115. This rating is guaranteed by 100 % UIS testing during production, ensuring ruggedness against inductive switching transients in hard-switched topologies.

Can SIR846ADP-T1-RE3 be mounted on a standard SO-8 PCB footprint without modification?

Yes, SIR846ADP-T1-RE3 uses the PowerPAK SO-8 package, which shares identical pinout and outline dimensions with standard SO-8 - allowing drop-in replacement on existing SO-8 land patterns. However, optimal thermal performance requires extending the drain copper area per Vishay Application Note 826.

What is the typical gate threshold voltage range for SIR846ADP-T1-RE3, and how does it vary with temperature?

The gate threshold voltage V_GS(th) for SIR846ADP-T1-RE3 is specified as 1.8–3.0 V at T_J = 25 °C, with a temperature coefficient of −6 mV/°C. At 125 °C junction temperature, V_GS(th) typically drops to ~2.2 V, enabling stable turn-on with standard 5 V gate drivers across full operating range.

How does the body diode performance of SIR846ADP-T1-RE3 compare to conventional MOSFETs in synchronous rectification?

SIR846ADP-T1-RE3 features a fast body diode with t_rr = 47–90 ns and Q_rr = 64–122 nC at T_J = 25 °C, significantly better than standard planar MOSFETs. This enables efficient commutation in synchronous rectifier and ZVS circuits, reducing reverse recovery loss and associated EMI in high-frequency converters.

SIR846ADP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2350 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR846ADP-T1-RE3 FAQ

1.How can I place an order for SIR846ADP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR846ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR846ADP-T1-RE3 reliable?

The price and inventory of SIR846ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR846ADP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR846ADP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR846ADP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR846ADP-T1-RE3?

SIR846ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR846ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR846ADP-T1-RE3?

For technical support, including SIR846ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR846ADP-T1-RE3 requirements.

6.How does Aetrix verify that SIR846ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR846ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR846ADP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR846ADP-T1-RE3?

All SIR846ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR846ADP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR846ADP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR846ADP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …