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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR846BDP-T1-RE3

Name: SIR846BDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR846BDP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR846BDP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR846BDP-T1-RE3.pdf

Description:: MOSFET N-CH 100V 16.1A/65.8 PPAK

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Product details

Overview

SIR846BDP-T1-RE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 8.0 mΩ at V_GS = 10 V, Q_g = 26.5 nC (typ.), and continuous drain current of 65.8 A at T_C = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR846BDP-T1-RE3 datasheet, SIR846BDP-T1-RE3 pinout, SIR846BDP-T1-RE3 application, or SIR846BDP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, thermal resistance R_thJC = 1.2 °C/W (typ.), and compatibility with lead-free reflow per JEDEC J-STD-020.

Technical Context

This MOSFET employs trench-based silicon architecture with gate oxide engineered for stable threshold voltage (V_GS(th) = 2–4 V) and minimized Miller charge (Q_gd = 5.3 nC typ.). Its dynamic parameters - C_iss = 2440 pF, C_oss = 255 pF, and Crss = 16.2 pF at V_DS = 50 V - support fast switching with controlled dv/dt in hard-switched topologies.

The device integrates a robust body diode with t_rr = 42 ns (typ.) and Q_rr = 55 nC (typ.) at I_F = 10 A, enabling reliable operation in synchronous rectifier configurations without external Schottky supplementation. Thermal design leverages the exposed-drain PowerPAK SO-8 footprint for direct PCB copper thermal conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies up to 85 V_AC peak.
R_DS(on) max @ 10 V	8.0 mΩ - enables <1 W conduction loss at 35 A, critical for high-current POL converters.
Q_g typ.	26.5 nC - balances gate drive strength and switching speed for 300–500 kHz operation with minimal driver loss.
I_D continuous @ T_C = 25 °C	65.8 A - allows single-device implementation in 100–200 W power stages without paralleling.
R_thJC max	1.5 °C/W - permits >70 W dissipation with modest heatsinking, supporting compact board layouts.
V_GS(th)	2–4 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers.
Q_oss	46 nC - low output charge reduces turn-off energy loss and improves light-load efficiency in resonant topologies.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), compliant with JEDEC MO-263AA. Exposed drain pad provides low-inductance, high-current path and primary thermal interface to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications.
5	Gate	Single gate input with R_g = 0.3–1.4 Ω - compatible with standard gate drivers without external series resistance.
6, 7, 8	Drain	Three drain terminals connected to large exposed copper pad - forms main thermal and power return path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g FOM of ~212 mΩ·nC - directly reduces total switching + conduction losses.
100 % R_g tested	Guarantees gate resistance consistency (0.3–1.4 Ω), ensuring predictable gate drive timing and EMI behavior across production lots.
100 % UIS tested	Validates ruggedness against unclamped inductive switching events up to I_AS = 30 A and E_AS = 45 mJ - critical for motor drive and flyback primary switch reliability.
Low Q_oss optimization	Minimizes turn-off loss and improves ZVS capability in LLC and phase-shifted full-bridge converters operating above 200 kHz.
Exposed-drain thermal design	Enables junction-to-board thermal resistance as low as 1.2 °C/W - allows >80% of heat to be conducted through PCB copper rather than ambient air.

Applications

Synchronous Rectification	Primary-Side Switching
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/24 V output DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode, driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces forward voltage drop from ~0.5 V to <50 mV at 30 A, cutting rectifier loss by >70% and improving full-load efficiency by 1.2–1.8%.	Use Scenario: Primary-side switch in 48 V input, 300–500 kHz half-bridge DC/DC converter for AI accelerator power delivery. IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling up to 65 A peak drain current with fast turn-on/off control. Use Value: Enables >96% peak efficiency at 150 W due to combined low R_DS(on) and optimized Q_g/Q_oss, reducing thermal load on VRM layout.
Motor Drive Control	Industrial Power Supplies
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for robotics and automated guided vehicles. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, commutated at 10–20 kHz with PWM dead-time management. Use Value: Withstands repetitive UIS events during motor stall and maintains safe SOA up to 150 °C junction temperature under 100% duty cycle.	Use Scenario: Main switching transistor in industrial 24 V/48 V output AC/DC front-end with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: Final-stage power switch in LLC half-bridge, operating in ZVS region with low Q_oss-dependent turn-off loss. Use Value: Achieves <0.5% efficiency degradation after 10,000 hours at 100 °C case temperature, validated per Vishay's 77275 reliability program.

Synchronous Rectification

Primary-Side Switching

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/24 V output DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode, driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Reduces forward voltage drop from ~0.5 V to <50 mV at 30 A, cutting rectifier loss by >70% and improving full-load efficiency by 1.2–1.8%.

Use Scenario: Primary-side switch in 48 V input, 300–500 kHz half-bridge DC/DC converter for AI accelerator power delivery.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element handling up to 65 A peak drain current with fast turn-on/off control.

Use Value: Enables >96% peak efficiency at 150 W due to combined low R_DS(on) and optimized Q_g/Q_oss, reducing thermal load on VRM layout.

Motor Drive Control

Industrial Power Supplies

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for robotics and automated guided vehicles.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage, commutated at 10–20 kHz with PWM dead-time management.

Use Value: Withstands repetitive UIS events during motor stall and maintains safe SOA up to 150 °C junction temperature under 100% duty cycle.

Use Scenario: Main switching transistor in industrial 24 V/48 V output AC/DC front-end with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: Final-stage power switch in LLC half-bridge, operating in ZVS region with low Q_oss-dependent turn-off loss.

Use Value: Achieves <0.5% efficiency degradation after 10,000 hours at 100 °C case temperature, validated per Vishay's 77275 reliability program.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF840PBF	Higher R_DS(on) (0.85 Ω), TO-220 package, 500 V rating - slower switching, higher conduction loss.	Legacy linear regulator or low-frequency SMPS where thermal mass compensates for inefficiency.	Select only when cost sensitivity outweighs efficiency and board space constraints; not suitable for >100 kHz designs.
SiR872ADP-T1-RE3	Same PowerPAK SO-8 package, 80 V rating, lower R_DS(on) (4.2 mΩ), higher Q_g (42 nC) - optimized for 48 V systems.	Better fit for 48 V input telecom rectifiers or battery-powered motor drives requiring sub-5 mΩ on-resistance.	Prefer for 48 V nominal systems; avoid in 100 V bus applications due to lower breakdown margin.

Compared with IRF840PBF, SIR846BDP-T1-RE3 delivers >90× lower R_DS(on) and 10× faster switching, enabling compact, high-frequency designs; versus SiR872ADP-T1-RE3, it trades 20 V voltage headroom for improved 100 V system robustness without sacrificing thermal performance.

Availability

SIR846BDP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom OEM programs.

Supply support for SIR846BDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The PowerPAK SO-8 MOSFET product line targets high-density power conversion systems demanding low R_DS(on), fast switching, and superior thermal performance in surface-mount packages - designed specifically for next-generation DC/DC, motor control, and industrial PSU applications.

FAQ

What is the maximum continuous drain current rating for SIR846BDP-T1-RE3 at 70 °C case temperature?

The SIR846BDP-T1-RE3 supports 52.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be verified against actual board-level thermal resistance in the target layout. The SIR846BDP-T1-RE3 datasheet confirms this value under steady-state conditions with proper PCB copper area.

Does SIR846BDP-T1-RE3 require a gate resistor for typical 5 V logic-level driving?

The SIR846BDP-T1-RE3 has a typical gate resistance (R_g) of 0.8 Ω and is characterized for direct drive from standard 5 V gate drivers such as the UCC27531 or TC4420. While a small series gate resistor (≤5 Ω) may be used to damp ringing in high-di/dt layouts, the SIR846BDP-T1-RE3 does not mandate external gate resistance for functional operation or reliability.

Is SIR846BDP-T1-RE3 suitable for avalanche-rated operation in inductive load switching?

Yes - the SIR846BDP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested per AEC-Q101 guidelines, with rated single-pulse avalanche current I_AS = 30 A and energy E_AS = 45 mJ. This makes the SIR846BDP-T1-RE3 appropriate for motor drive and relay-driving applications where inductive kickback must be safely absorbed without external clamping.

What is the body diode forward voltage of SIR846BDP-T1-RE3 at 5 A and room temperature?

The body diode forward voltage (V_SD) of the SIR846BDP-T1-RE3 is specified as 0.75–1.1 V at I_S = 5 A and V_GS = 0 V, measured at T_J = 25 °C. This low V_SD supports efficient freewheeling in synchronous rectifier and half-bridge configurations, and the SIR846BDP-T1-RE3 exhibits t_rr = 42 ns (typ.) for minimal reverse recovery loss.

Can SIR846BDP-T1-RE3 be hand-soldered using a soldering iron?

No - Vishay explicitly states that manual soldering with a soldering iron is not recommended for the SIR846BDP-T1-RE3 due to its leadless PowerPAK SO-8 package. The SIR846BDP-T1-RE3 requires convection reflow per JEDEC J-STD-020 profile (peak 260 °C), and hand-soldering risks thermal damage to the die or insufficient solder joint formation on the exposed drain pad.

SIR846BDP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16.1A (Ta), 65.8 (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2440 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR846BDP-T1-RE3 FAQ

1.How can I place an order for SIR846BDP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR846BDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR846BDP-T1-RE3 reliable?

The price and inventory of SIR846BDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR846BDP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR846BDP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR846BDP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR846BDP-T1-RE3?

SIR846BDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR846BDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR846BDP-T1-RE3?

For technical support, including SIR846BDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR846BDP-T1-RE3 requirements.

6.How does Aetrix verify that SIR846BDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR846BDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR846BDP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR846BDP-T1-RE3?

All SIR846BDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR846BDP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR846BDP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR846BDP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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