Vishay Siliconix SIR846DP-T1-GE3

Overview

SIR846DP-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 60 A continuous drain current at TC = 25 °C, RDS(on) of 7.8 mΩ at VGS = 10 V, and 35.7 nC total gate charge - optimized for primary-side switching in isolated DC/DC converters and full-bridge topologies.

For engineers reviewing the SIR846DP-T1-GE3 datasheet, SIR846DP-T1-GE3 pinout, SIR846DP-T1-GE3 application, or SIR846DP-T1-GE3 equivalent, key selection considerations include its 100 % UIS-tested ruggedness, lead (Pb)-free and halogen-free construction per IEC 61249-2-21, and junction-to-case thermal resistance of 0.9 °C/W enabling high-power density designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low RDS(on) with fast switching dynamics: Crss = 83 pF and Qgd = 9.1 nC support efficient hard-switching operation in high-frequency power supplies. Its gate threshold voltage (VGS(th) = 1.5–3.5 V) and negative temperature coefficient (−6.7 mV/°C) ensure stable turn-on behavior across −55 to 150 °C operating range.

The device integrates a robust body diode with trr = 59–100 ns and Qrr = 89–150 nC, validated for synchronous rectification and freewheeling roles. Absolute maximum ratings include VDS = 100 V, VGS = ±20 V, and single-pulse avalanche energy EAS = 61 mJ - confirming suitability for transient-prone primary-side switch applications.

Key Specifications

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with same footprint as standard SO-8 but enhanced thermal performance via exposed drain pad on bottom side. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with 1.27 mm pitch between gate and source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V power MOSFET applications.

Compared with SiR872DP-T1-GE3, SIR846DP-T1-GE3 trades 2.6 mΩ higher RDS(on) for 16.8 nC lower Qg - favoring high-frequency switching. Versus IRF540NPBF, it delivers 82 % lower RDS(on) and 40 % better thermal resistance in half the footprint, enabling next-generation power density.

Availability

SIR846DP-T1-GE3 is available at Aetrix Electronics and suitable for isolated DC/DC converters, full-bridge inverters, and primary-side switching applications requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIR846DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR846DP product line targets high-current, high-voltage switching in space-constrained power conversion systems - engineered specifically for rugged primary-side operation in telecom, industrial, and computing power supplies.

FAQ

What is the maximum continuous drain current rating for SIR846DP-T1-GE3 at 70 °C case temperature?

The SIR846DP-T1-GE3 supports 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C value due to the PowerPAK® SO-8's superior thermal design, which minimizes junction-to-case resistance to 0.9 °C/W.

Does SIR846DP-T1-GE3 require a heatsink in typical 48 V DC/DC converter applications?

SIR846DP-T1-GE3 typically does not require an external heatsink when mounted on a 4-layer FR-4 PCB with ≥0.5 in² of copper pour under the drain pad. With RthJC = 0.9 °C/W and RthJA ≈ 15 °C/W (t ≤ 10 s), junction temperature stays below 125 °C at 40 A continuous current and 25 °C ambient - verified in Vishay Application Note AN821.

Is SIR846DP-T1-GE3 compatible with standard SO-8 footprints?

Yes, SIR846DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical outline, pin pitch, and land pattern compatibility with standard SO-8. The drain pads extend beyond traditional leads to maximize thermal contact, but no PCB redesign is needed - existing SO-8 layouts accept this part directly per Vishay Application Note AN826.

What gate drive voltage is recommended for optimal RDS(on) performance in SIR846DP-T1-GE3?

For minimum RDS(on), SIR846DP-T1-GE3 should be driven with VGS = 10 V, achieving 7.8 mΩ. At VGS = 7.5 V, RDS(on) rises to 8.5 mΩ - still suitable for most applications. Gate drive must remain within ±20 V absolute maximum to avoid oxide damage, and gate resistance should be selected to limit dV/dt-induced shoot-through in bridge configurations.

How is the body diode performance of SIR846DP-T1-GE3 characterized for synchronous rectification?

The SIR846DP-T1-GE3 body diode exhibits VSD = 0.77–1.1 V at IS = 5 A and trr = 59–100 ns at IF = 20 A, dI/dt = 100 A/µs. Its Qrr = 89–150 nC enables low-loss freewheeling in synchronous buck and LLC resonant converters, especially when paired with adaptive gate timing to minimize reverse recovery overlap losses.