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Vishay Siliconix SIR850DP-T1-GE3
- Part No.:
- SIR850DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR850DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,277
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Product details
Overview
SIR850DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, rated for 30 A continuous drain current at TC = 25 °C, with RDS(on) = 7.0 mΩ at VGS = 10 V and 9.0 mΩ at VGS = 4.5 V, designed for high-side synchronous buck converter applications.
For engineers reviewing the SIR850DP-T1-GE3 datasheet, SIR850DP-T1-GE3 pinout, SIR850DP-T1-GE3 application, or SIR850DP-T1-GE3 equivalent, key selection criteria include its low gate charge (8.4 nC at 4.5 V), 100 % UIS-tested ruggedness, halogen-free/lead-free construction, and thermal performance matching DPAK via PowerPAK SO-8 footprint compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-efficiency DC-DC conversion, featuring a low RDS(on)–Qg product (63 mΩ·nC at 10 V) and fast switching with td(off) ≤ 45 ns and tf ≤ 15 ns under 10 V drive. Its body diode exhibits trr = 23–45 ns and Qrr = 15–30 nC, supporting high-frequency synchronous rectification.
The device operates across –55 °C to +150 °C junction temperature range, with RthJC = 2.4 °C/W (typ.) and RthJA = 21 °C/W (typ., t ≤ 10 s), enabled by exposed-drain thermal pad design. It is fully characterized for unclamped inductive switching (UIS) and gate charge (Qg, Qgd, Qgs) at VDS = 12.5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 24 V input rail systems with margin |
| RDS(on) @ VGS = 10 V | 7.0 mΩ - Enables <1.4 W conduction loss at 30 A, critical for high-current POL converters |
| RDS(on) @ VGS = 4.5 V | 9.0 mΩ - Supports logic-level gate drive from 5 V or 4.5 V controllers without level shift |
| Qg @ VGS = 4.5 V | 8.4 nC - Low gate charge reduces driver power loss and enables >1 MHz operation |
| ID (continuous, TC = 25 °C) | 30 A - Package-limited current rating suitable for 20–25 A output buck stages with derating |
| EAS | 61 mJ - Confirmed avalanche energy rating ensures robustness during transient overloads |
| RthJC | 2.4 °C/W - Thermal resistance from junction to exposed drain pad enables direct heatsinking to PCB copper |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with same 5.15 mm × 6.15 mm footprint as standard SO-8 but with exposed drain pad on bottom for enhanced thermal conduction. Pin numbering follows standard SO-8 convention (1–8, top view, counterclockwise from notch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Five parallel drain terminals tied to large exposed bottom pad - primary thermal path and high-current return |
| 4 | Gate (G) | Single gate input - low capacitance (Ciss = 1120 pF) and Rg = 1.0–2.0 Ω support fast, stable switching |
| 5, 6 | Source (S) | Two source terminals - low-inductance connection for gate drive return and current sensing reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 7.0 mΩ RDS(on) in SO-8 footprint - 3× lower on-resistance than typical SO-8 MOSFETs of same size |
| 100 % UIS tested | Guarantees survival under worst-case inductive turn-off stress without external snubber |
| Halogen-free & Pb-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile (peak 260 °C) |
| Exposed drain thermal pad | Reduces RthJC to 2.4 °C/W - enables 41.7 W power dissipation at TC = 25 °C, equivalent to DPAK |
| Low Qgd/Qg ratio | Qgd = 2.0 nC / Qg = 8.4 nC → 24 % - improves Miller immunity and dV/dt ruggedness in hard-switching |
Applications
| Server VRMs | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying 0.8–1.2 V to CPU/GPU cores at up to 100 A per phase. IC Role / Device Role: High-side switch handling 25 V input, switching at 500 kHz–1 MHz with minimal conduction and switching loss. Use Value: 7.0 mΩ RDS(on) and 8.4 nC Qg reduce total losses by ≥15 % vs. legacy SO-8 MOSFETs, improving efficiency and thermal margin. |
Use Scenario: Compact, high-density point-of-load regulators on graphics cards where board space and thermal headroom are constrained. IC Role / Device Role: Primary high-side FET in dual-phase or triple-phase synchronous buck stages operating from 12 V rail. Use Value: PowerPAK SO-8 footprint allows drop-in replacement of SO-8 designs while delivering DPAK-level thermal performance without layout change. |
| Telecom DC-DC Modules | Industrial Motor Control Drivers |
Use Scenario: Isolated or non-isolated 48 V–12 V intermediate bus converters in base station power supplies requiring high reliability. IC Role / Device Role: High-side switch in synchronous rectified buck topology, subjected to repeated load transients and elevated ambient temperatures. Use Value: 61 mJ EAS and 100 % UIS testing ensure sustained operation under line surges and inductive kickback events. |
Use Scenario: Half-bridge gate drivers for BLDC motor control in factory automation equipment operating at 24–48 V bus. IC Role / Device Role: High-side FET in discrete half-bridge stage, requiring fast turn-on/turn-off and robust body diode recovery. Use Value: trr = 23–45 ns and Qrr = 15–30 nC minimize reverse recovery loss and cross-conduction risk during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870DP-T1-GE3 | RDS(on) = 4.5 mΩ @ 10 V, Qg = 13.5 nC - lower on-resistance but higher gate charge | Better conduction loss at high current; less suitable for ultra-high-frequency (>1 MHz) operation due to higher Qg | Select when minimizing I²R loss dominates over switching loss, e.g., in 300–500 kHz server VRMs |
| IRF7478PBF | RDS(on) = 8.0 mΩ @ 10 V, Qg = 12.5 nC, SO-8 package - higher RDS(on) and Qg, no exposed drain pad | Higher RthJA (62 °C/W) limits power handling; requires larger PCB copper area for thermal management | Use only if legacy SO-8 land pattern must be retained without thermal pad modification |
Compared with SiR870DP-T1-GE3 and IRF7478PBF, SIR850DP-T1-GE3 delivers optimal balance of low RDS(on), low Qg, and DPAK-matched thermal performance in SO-8 footprint - making it ideal for space-constrained, high-efficiency 500 kHz–1 MHz buck converters where both conduction and switching losses matter.
Availability
SIR850DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, telecom DC-DC modules, industrial motor control drivers, and high-density POL converters requiring stable component supply and long-term production continuity.
Supply support for SIR850DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SiR850DP product line targets high-frequency, high-current DC-DC conversion in computing, communications, and industrial systems - engineered to replace larger packages (DPAK, TO-252) without sacrificing thermal or electrical performance.
FAQ
What is the maximum continuous drain current rating for SIR850DP-T1-GE3 at 70 °C case temperature?
The SIR850DP-T1-GE3 is rated for 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits under steady-state conditions with adequate PCB copper heatsinking, not die capability alone. The SIR850DP-T1-GE3 maintains this current rating across its full operating temperature range up to TJ = 150 °C.
Does SIR850DP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, the SIR850DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 9.0 mΩ (max) at VGS = 4.5 V and ID = 15 A, and Qg = 8.4 nC (typ.) at the same condition. Its VGS(th) = 1.0–3.0 V ensures reliable enhancement-mode turn-on with standard 5 V or 4.5 V PWM controllers, eliminating need for gate boosters in most synchronous buck designs.
How does the PowerPAK SO-8 package of SIR850DP-T1-GE3 improve thermal performance versus standard SO-8?
The SIR850DP-T1-GE3 uses PowerPAK SO-8, which replaces molded leads with an exposed copper drain pad on the bottom surface. This reduces RthJC to 2.4 °C/W (typ.), matching DPAK performance, versus ~16 °C/W for standard SO-8. As a result, the SIR850DP-T1-GE3 achieves 41.7 W power dissipation at TC = 25 °C - over 8× higher than a typical SO-8 MOSFET - while maintaining identical PCB footprint.
Is SIR850DP-T1-GE3 suitable for synchronous rectification in buck converters?
Yes, the SIR850DP-T1-GE3 is explicitly qualified for high-side synchronous buck applications. Its body diode parameters - VSD = 0.75–1.2 V at IS = 4.0 A and trr = 23–45 ns - are optimized for low-loss freewheeling, and its 100 % UIS testing ensures robustness during dead-time transitions. The SIR850DP-T1-GE3 datasheet lists "Synchronous Buck – High-Side" as a primary application.
What is the gate resistance specification for SIR850DP-T1-GE3, and why does it matter?
The SIR850DP-T1-GE3 has a typical gate resistance (Rg) of 1.0–2.0 Ω, measured at 1 MHz. This intrinsic resistance dampens gate ringing and reduces EMI during fast switching, allowing simpler gate driver design. Combined with low Qg (8.4 nC), it enables clean 10 V gate transitions in <25 ns without external gate resistors in most 500 kHz–1 MHz applications using the SIR850DP-T1-GE3.
SIR850DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1120 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.8W (Ta), 41.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR850DP-T1-GE3 FAQ
1.How can I place an order for SIR850DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR850DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR850DP-T1-GE3 reliable?
The price and inventory of SIR850DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR850DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR850DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR850DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR850DP-T1-GE3?
SIR850DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR850DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR850DP-T1-GE3?
For technical support, including SIR850DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR850DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR850DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR850DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR850DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR850DP-T1-GE3?
All SIR850DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR850DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR850DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR850DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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