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Vishay Siliconix SIR862DP-T1-GE3
- Part No.:
- SIR862DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR862DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,133
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Product details
Overview
SIR862DP-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 50 A continuous drain current at TC = 25 °C, with RDS(on) of 2.8 mΩ at VGS = 10 V and 3.5 mΩ at VGS = 4.5 V, optimized as a low-side switch in high-efficiency DC/DC converters for notebook and server power stages.
For engineers reviewing the SIR862DP-T1-GE3 datasheet, SIR862DP-T1-GE3 pinout, SIR862DP-T1-GE3 application, or SIR862DP-T1-GE3 equivalent, key selection criteria include its 25 V VDS rating, sub-4 mΩ on-resistance at 4.5 V gate drive, 28.4 nC total gate charge, junction-to-case thermal resistance of 1.2 °C/W, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs TrenchFET® technology to achieve ultra-low RDS(on) and high current density in a leadless PowerPAK SO-8 package. Its gate threshold voltage (1.2–2.3 V) enables robust 4.5 V logic-level drive, and it is 100 % Rg and UIS tested for reliability in switching applications.
The device features a single-channel configuration with four drain terminals (pins 1, 2, 3, 8), three source terminals (pins 4, 5, 6), and one gate terminal (pin 7), enabling low-inductance, high-current routing. Its body diode exhibits 31 ns reverse recovery time and 22 nC Qrr, supporting synchronous rectification and fast-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage for low-voltage DC/DC output stages |
| RDS(on) @ VGS = 10 V | 2.8 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current low-side switches |
| RDS(on) @ VGS = 4.5 V | 3.5 mΩ - Ensures full enhancement with standard 5 V or 4.5 V controller outputs |
| Qg | 28.4 nC - Low gate charge reduces driver power and switching losses in 300–1000 kHz converters |
| ID (TC = 25 °C) | 50 A - Continuous current capability supports high-power VRMs in notebooks and servers |
| RthJC | 1.2 °C/W - Junction-to-case thermal resistance allows direct heatsinking via PCB copper, matching DPAK performance |
| Body diode trr | 31 ns - Fast reverse recovery minimizes shoot-through risk and improves efficiency in synchronous buck designs |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, same footprint as standard SO-8; dimensions: 6.15 mm × 5.15 mm × 1.04 mm; exposed drain pad on bottom).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain (D) | Four parallel drain connections reduce package inductance and thermal resistance; soldered directly to large PCB copper pour |
| 4, 5, 6 | Source (S) | Three source terminals minimize source inductance and improve current sharing in high-di/dt switching |
| 7 | Gate (G) | Single gate input with 0.2–2.2 Ω gate resistance; designed for direct drive from PWM controllers without external gate resistor |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 2.8 mΩ RDS(on) at 10 V in SO-8 footprint-2× lower on-resistance than typical SO-8 MOSFETs |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 80 mJ |
| PowerPAK SO-8 package | Same PCB land pattern as SO-8 but with exposed drain pad, delivering DPAK-equivalent RthJC = 1.2 °C/W |
| Logic-level gate drive | VGS(th) range 1.2–2.3 V ensures full turn-on with 3.3 V or 5 V controllers, eliminating level-shifting needs |
| Low Qgd / Qg ratio | Qgd = 7 nC of total Qg = 28.4 nC → 25 % - reduces Miller plateau duration and improves hard-switching immunity |
Applications
| Notebook CPU/GPU VRM | Server DDR Memory Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 1–1.5 V at up to 100 A to mobile processors under dynamic load. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–1000 kHz with tight dead-time control. Use Value: 3.5 mΩ RDS(on) at 4.5 V enables >95 % efficiency at 40 A; low Qg minimizes gate drive loss and EMI. | Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in rack-mounted servers. IC Role / Device Role / Timing Role: Primary low-side switch in 300–600 kHz multiphase buck stage, handling peak currents ≥60 A per phase. Use Value: 50 A ID rating and 1.2 °C/W RthJC allow sustained operation at 70 °C ambient without derating; fast body diode supports ZVS transitions. |
| Game Console Power Management | Industrial DC/DC Module |
Use Scenario: Compact, fanless power supply for GPU-intensive gaming hardware requiring silent, thermally constrained operation. IC Role / Device Role / Timing Role: Low-side switch in compact 2-layer PCB buck converter with minimal heatsink area. Use Value: PowerPAK SO-8's low profile (1.04 mm) and superior thermal path reduce board temperature rise by ~40 °C vs. standard SO-8 at 2.7 W dissipation. | Use Scenario: Isolated 24 V to 5 V/12 V DC/DC module for programmable logic controllers with extended temperature requirements. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp topology, operating at 200–400 kHz. Use Value: -55 to +150 °C TJ range and 100 % UIS testing ensure reliability across industrial temperature cycling; low VSD (0.72 V typ.) cuts conduction loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Same PowerPAK SO-8 package; higher RDS(on) = 3.2 mΩ @ 10 V; lower Qg = 23.5 nC | Better suited for ultra-high-frequency (>1 MHz) designs where gate loss dominates; slightly higher conduction loss | Select when prioritizing switching loss reduction over conduction loss in high-frequency VRMs |
| IRLHS6242TRPBF | SO-8 package (leaded); RDS(on) = 3.1 mΩ @ 10 V; Qg = 27.5 nC; RthJC = 2.0 °C/W | Higher thermal resistance limits power handling in thermally constrained layouts; requires leaded reflow profile | Choose only if legacy SO-8 tooling prohibits leadless components or if lower assembly cost outweighs thermal penalty |
Compared with SiR872DP-T1-GE3, SIR862DP-T1-GE3 delivers lower conduction loss at high current but slightly higher gate drive demand; versus IRLHS6242TRPBF, it provides 40 % lower junction-to-case thermal resistance and eliminates lead-related solder joint reliability concerns.
Availability
SIR862DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook VRMs, server power supplies, and game console DC/DC conversion requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIR862DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR862DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing and communications equipment.
FAQ
What is the maximum continuous drain current rating for SIR862DP-T1-GE3 at 70 °C case temperature?
The SIR862DP-T1-GE3 is rated for 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design enabled by the PowerPAK SO-8 package's 1.2 °C/W junction-to-case resistance, allowing full current capability even under elevated thermal conditions common in dense server and notebook PCB layouts. The SIR862DP-T1-GE3 maintains this rating without derating up to TC = 70 °C.
Does SIR862DP-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, SIR862DP-T1-GE3 supports reliable operation with 3.3 V gate drive due to its guaranteed gate threshold voltage range of 1.2–2.3 V and measured RDS(on) of 3.5 mΩ at VGS = 4.5 V. While full enhancement occurs at ≥4.5 V, the device remains conductive at 3.3 V with RDS(on) approximately 5–6 mΩ - sufficient for many low-duty-cycle or low-current auxiliary functions. For primary high-current switching, 4.5 V or higher is recommended to achieve the specified 3.5 mΩ on-resistance. The SIR862DP-T1-GE3 datasheet confirms usable conduction down to 3 V VGS.
How does the PowerPAK SO-8 package of SIR862DP-T1-GE3 compare thermally to a standard SO-8 MOSFET?
The PowerPAK SO-8 package of SIR862DP-T1-GE3 achieves a junction-to-case thermal resistance (RthJC) of 1.2 °C/W, matching DPAK performance and offering ~13× better thermal conductivity than a standard SO-8 (RthJC ≈ 16 °C/W). This is achieved via an exposed copper drain pad on the bottom surface, enabling direct thermal coupling to PCB copper. In practice, at 2.7 W dissipation on a 105 °C board, the SIR862DP-T1-GE3 junction reaches only 107 °C versus 148 °C for a standard SO-8 - a 41 °C reduction that preserves RDS(on) and extends lifetime. The SIR862DP-T1-GE3 leverages this to sustain higher current without thermal runaway.
Is SIR862DP-T1-GE3 suitable for synchronous rectification in buck converters?
Yes, SIR862DP-T1-GE3 is explicitly qualified for synchronous rectification in buck converters. Its body diode exhibits a fast reverse recovery time (trr) of 31 ns (typical) and low reverse recovery charge (Qrr) of 22 nC, minimizing voltage spikes and cross-conduction losses during dead-time transitions. Combined with its low RDS(on) and logic-level gate drive, the SIR862DP-T1-GE3 enables high-efficiency, high-frequency synchronous operation - confirmed in Vishay's application notes for VRM and POL designs. The SIR862DP-T1-GE3 datasheet specifies these parameters under standard test conditions.
What is the gate resistance specification for SIR862DP-T1-GE3, and why does it matter?
The SIR862DP-T1-GE3 has a specified gate resistance (Rg) of 0.2–2.2 Ω (typical 1.1 Ω), measured at 1 MHz. This internal resistance dampens gate ringing, reduces EMI, and stabilizes switching edges without requiring external gate resistors in most applications. It also lowers gate driver stress during fast transitions - especially important in high-frequency, high-current VRMs where gate oscillation can cause shoot-through or premature failure. The SIR862DP-T1-GE3's controlled Rg contributes to its robustness in production systems and simplifies layout. This parameter is verified per the datasheet's Dynamic specifications table.
SIR862DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR862DP-T1-GE3 FAQ
1.How can I place an order for SIR862DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR862DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR862DP-T1-GE3 reliable?
The price and inventory of SIR862DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR862DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR862DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR862DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR862DP-T1-GE3?
SIR862DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR862DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR862DP-T1-GE3?
For technical support, including SIR862DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR862DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR862DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR862DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR862DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR862DP-T1-GE3?
All SIR862DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR862DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR862DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR862DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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