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Vishay Siliconix SIR864DP-T1-GE3
- Part No.:
- SIR864DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR864DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,420
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Product details
Overview
SIR864DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 40 A continuous drain current at TC = 25 °C, RDS(on) of 3.6 mΩ at VGS = 10 V, and 4.5 mΩ at VGS = 4.5 V, optimized for low-side switching in synchronous buck converters for notebook PCs and graphics cards.
For engineers reviewing the SIR864DP-T1-GE3 datasheet, SIR864DP-T1-GE3 pinout, SIR864DP-T1-GE3 application, or SIR864DP-T1-GE3 equivalent, key selection criteria include its 30 V VDS rating, 20 nC typical gate charge at 4.5 V drive, 1.8 °C/W junction-to-case thermal resistance, halogen-free and RoHS-compliant construction, and validated UIS and 100 % Rg testing.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (1.2–2.4 V) enables compatibility with 3.3 V and 5 V logic-level gate drivers, while the 2460 pF input capacitance and 200 pF reverse transfer capacitance support high-frequency operation up to several MHz in DC-DC converters.
The device integrates a robust body diode with 0.71–1.1 V forward voltage at 5 A and 25–50 ns reverse recovery time, enabling efficient synchronous rectification. Thermal design leverages the exposed drain pad of the leadless PowerPAK SO-8 package, achieving 1.8 °C/W RthJC and enabling high-current operation without external heatsinking when mounted on adequate PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 19 V input rails. |
| RDS(on) | 3.6 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-efficiency low-side switch operation. |
| ID (cont.) | 40 A @ TC = 25 °C - Package-limited current capacity; requires thermal management above 70 °C case temperature. |
| Qg | 20 nC @ VGS = 4.5 V - Low gate charge reduces driver power and switching losses in 3.3 V control systems. |
| RthJC | 1.8 °C/W - Junction-to-case thermal resistance enables direct heat transfer from die to PCB copper via exposed drain pad. |
| VGS(th) | 1.2–2.4 V - Logic-level threshold ensures reliable turn-on with standard microcontroller GPIO or PWM controllers. |
| Ciss | 2460 pF - Input capacitance impacts gate drive strength requirements and EMI filtering needs in high-dV/dt environments. |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with same footprint and pinout as standard SO-8, featuring an exposed copper drain pad on the bottom for enhanced thermal performance. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source voltage; low 0.3–2.2 Ω gate resistance minimizes ringing. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground plane in buck converter low-side layout. |
| 3 (S) | Source | Dual-source connection improves current sharing and reduces source inductance in high-di/dt switching. |
| 4 (S) | Source | Third source terminal enhances thermal and electrical connection to PCB ground plane. |
| 5 (D) | Drain | Main power output node; connected to exposed bottom pad for low-impedance thermal path to PCB copper. |
| 6 (D) | Drain | Second drain terminal supports high-current routing from inductor node to MOSFET die. |
| 7 (D) | Drain | Third drain terminal improves current distribution and reduces package parasitic inductance. |
| 8 (D) | Drain | Fourth drain terminal maximizes copper area contact for thermal dissipation and power integrity. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 3.6 mΩ RDS(on) in SO-8 footprint-equivalent to DPAK thermal performance without larger package. |
| 100 % Rg tested | Guarantees gate resistance between 0.3–2.2 Ω, ensuring consistent switching speed and reduced gate driver stress. |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 30 A single-pulse avalanche current. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-required for consumer electronics and green procurement programs. |
| Exposed drain pad | Provides direct thermal path to PCB; achieves 1.8 °C/W RthJC-enables 54 W power dissipation at TC = 25 °C. |
Applications
| Server VRMs | Notebook PC CPU Power |
|---|---|
Use Scenario: High-current, high-efficiency point-of-load regulation in dual-phase or multiphase buck converters supplying CPUs and GPUs. IC Role / Device Role: Low-side synchronous rectifier switch handling up to 40 A continuous current per phase. Use Value: 3.6 mΩ RDS(on) minimizes conduction loss and thermal rise, supporting >95 % efficiency at 20 A load with minimal heatsink requirement. | Use Scenario: Compact, thermally constrained 12 V input buck regulator powering Intel Core or AMD Ryzen mobile processors. IC Role / Device Role: Low-side FET in 300 kHz–1 MHz switching converter with 3.3 V or 5 V gate drive. Use Value: 20 nC Qg at 4.5 V enables fast turn-on with low-power gate drivers, reducing switching loss and improving light-load efficiency. |
| Graphics Card VRMs | Industrial DC-DC Modules |
Use Scenario: Multi-phase power delivery for NVIDIA or AMD discrete GPUs requiring transient response to >100 A peak loads. IC Role / Device Role: Low-side switch in interleaved buck stages where low RDS(on) and low Qg reduce total power loss and thermal density. Use Value: Validated UIS performance ensures reliability during GPU load transients and inrush events without snubber circuits. | Use Scenario: Isolated or non-isolated 24 V to 5 V/3.3 V conversion in programmable logic controllers and motor drives. IC Role / Device Role: Primary low-side switch in industrial-grade buck converter with extended temperature operation (-55 to 150 °C). Use Value: -55 to 150 °C operating range and 65 °C/W RthJA (t ≤ 10 s) support stable operation in sealed enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | Higher VDS (40 V), higher RDS(on) (4.0 mΩ @ 10 V), same PowerPAK SO-8 package and pinout. | Better suited for 24 V input systems; marginally lower efficiency at 12 V due to higher on-resistance. | Select when system input voltage exceeds 30 V or higher avalanche energy (EAS = 65 mJ) is required. |
| IRF7470PBF | SO-8 package (leaded), 30 V, 4.2 mΩ @ 10 V, 32 nC Qg, no 100 % UIS test guarantee. | Compatible footprint but inferior thermal performance (RthJC ≈ 3.5 °C/W) and higher gate charge increases driver loss. | Consider only if legacy SO-8 rework capability is mandatory and thermal budget allows 15–20 °C higher junction temperature. |
Compared with SiR872DP-T1-GE3, SIR864DP-T1-GE3 offers lower conduction loss in 12–19 V systems; compared with IRF7470PBF, it delivers superior thermal management and verified ruggedness-critical for high-reliability computing power stages.
Availability
SIR864DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC motherboard designs, graphics card VRMs, and server point-of-load regulators requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.
Supply support for SIR864DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and power ICs for demanding power management applications.
The SiR864DP product line is designed specifically for high-efficiency, high-current synchronous buck converter low-side switches in space-constrained computing and graphics platforms, emphasizing thermal performance and logic-level drivability.
FAQ
What is the maximum continuous drain current rating for SIR864DP-T1-GE3 at 70 °C case temperature?
The SIR864DP-T1-GE3 is rated for 40 A continuous drain current at TC = 25 °C and 40 A at TC = 70 °C-both values are package-limited per the datasheet's "g" footnote. This reflects the PowerPAK SO-8's robust thermal design, which maintains current capacity across a wide case temperature range before derating begins above 70 °C.
Does SIR864DP-T1-GE3 support 3.3 V gate drive in logic-level applications?
Yes, SIR864DP-T1-GE3 has a gate threshold voltage range of 1.2–2.4 V and specified RDS(on) of 4.5 mΩ at VGS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. Its low 20 nC gate charge at 4.5 V further ensures fast, efficient switching without excessive driver power consumption.
What is the thermal resistance from junction to ambient for SIR864DP-T1-GE3 under standard mounting conditions?
The SIR864DP-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 20 °C/W for t ≤ 10 s on a 1" × 1" FR4 board. Under steady-state conditions, RthJA is not specified; instead, the datasheet specifies 65 °C/W maximum for unrestricted natural convection-designers must use RthJC = 1.8 °C/W and PCB copper area to calculate actual thermal performance.
Is SIR864DP-T1-GE3 suitable for synchronous rectification in buck converters?
Yes, SIR864DP-T1-GE3 is explicitly qualified for synchronous buck converter low-side switching. Its body diode features 0.71–1.1 V forward voltage at 5 A and 25–50 ns reverse recovery time, enabling efficient synchronous rectification with minimal shoot-through risk and low recovery loss when paired with appropriate gate timing.
What does the "-GE3" suffix indicate in SIR864DP-T1-GE3?
The "-GE3" suffix in SIR864DP-T1-GE3 denotes Vishay's green packaging standard: lead (Pb)-free and halogen-free construction compliant with IEC 61249-2-21 and RoHS Directive 2002/95/EC. It confirms the device meets environmental compliance requirements for consumer and computing end equipment without compromising electrical or thermal performance.
SIR864DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2460 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR864DP-T1-GE3 FAQ
1.How can I place an order for SIR864DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR864DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR864DP-T1-GE3 reliable?
The price and inventory of SIR864DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR864DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR864DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR864DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR864DP-T1-GE3?
SIR864DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR864DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR864DP-T1-GE3?
For technical support, including SIR864DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR864DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR864DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR864DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR864DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR864DP-T1-GE3?
All SIR864DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR864DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR864DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR864DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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