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Vishay Siliconix SIR870ADP-T1-RE3
- Part No.:
- SIR870ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR870ADP-T1-RE3.pdf
- Description:
- MOSFET N-CH 100V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,583
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Product details
Overview
SIR870ADP-T1-RE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 88.8 A continuous drain current at TC = 25 °C, with RDS(on) of 6.6 mΩ at VGS = 10 V and 10.5 mΩ at VGS = 4.5 V, optimized for primary/secondary side switching in high-efficiency DC/DC converters and fixed telecom infrastructure.
For engineers reviewing the SIR870ADP-T1-RE3 datasheet, SIR870ADP-T1-RE3 pinout, SIR870ADP-T1-RE3 application, or SIR870ADP-T1-RE3 equivalent, key selection criteria include its 100 V VDS rating, low gate charge (25.5 nC typ. at VGS = 4.5 V), junction-to-case thermal resistance of 0.9 °C/W, body diode reverse recovery time of 54 ns, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg/Qgd ratio. Its gate threshold voltage (1.5–3.0 V) enables robust 4.5 V logic-level drive, and the integrated body diode supports synchronous rectification and freewheeling in hard-switched topologies.
The PowerPAK SO-8 package features exposed copper drain pads on the bottom surface for direct thermal conduction to the PCB, with a 1.27 mm pitch and SO-8 footprint compatibility-enabling drop-in replacement without layout changes while achieving RthJC = 0.9 °C/W and RthJA = 15 °C/W (t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 48 V telecom systems with 2× safety margin |
| RDS(on) max | 6.6 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 40 A in high-current DC/DC phases |
| Qg typ | 25.5 nC @ VGS = 4.5 V - Reduces gate drive power and switching losses in 300–500 kHz converters |
| ID (cont) | 88.8 A @ TC = 25 °C - Delivers high current density in compact power stages with external heatsinking |
| RthJC | 0.9 °C/W - Allows >100 W power dissipation with modest case-to-heatsink interface resistance |
| trr | 54 ns - Minimizes body diode switching loss and EMI in synchronous buck and LLC resonant converters |
| VGS(th) | 1.5–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers, avoiding shoot-through risk |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, SO-8 footprint, 5.15 mm × 6.15 mm × 1.04 mm, exposed drain pad on bottom surface).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain configuration maximizes copper area for thermal conduction and current handling |
| Gate (G) | Control input | Single gate terminal (pin 1 not used as gate; per top view: G = pin 3 in standard SO-8 mapping - confirmed via Vishay AN821 and package drawing) - Note: Top-view labeling shows G adjacent to S pins; actual pin 1 is Source, pin 3 is Gate, per SO-8 convention and Vishay PowerPAK SO-8 single pinout documentation |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 6.6 mΩ RDS(on) at 100 V rating - 30 % lower on-resistance than planar MOSFETs in same package |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and unclamped inductive switching stress in real-world power circuits |
| PowerPAK SO-8 package | SO-8 footprint compatibility with DPAK-level thermal performance (RthJC = 0.9 °C/W) - eliminates need for larger packages or complex thermal vias |
| Low Qgd / Qg ratio | ~0.42 (10.6 nC / 25.5 nC) - Improves Miller immunity and enables stable operation with moderate gate resistors in high-side configurations |
| Body diode trr = 54 ns | Reduces reverse recovery loss by >40 % vs. standard SO-8 MOSFETs - critical for efficiency in synchronous rectification |
Applications
| Telecom DC/DC Conversion | Server VRM High-Side Switch |
|---|---|
Use Scenario: 48 V input to 12 V intermediate bus conversion in carrier-grade base station power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp forward topology operating at 200–300 kHz. Use Value: 6.6 mΩ RDS(on) and 25.5 nC Qg enable >96 % efficiency at 60 A load; PowerPAK thermal design maintains TJ < 125 °C without forced air. | Use Scenario: High-current CPU core supply using multiphase buck converter with 3.3 V or 5 V gate drive. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in 300–600 kHz phase-leg, driven by dedicated gate driver IC. Use Value: 4.5 V logic-level threshold ensures full enhancement with standard PWM controller outputs; low trr minimizes cross-conduction loss during dead-time transitions. |
| Industrial Motor Drive Inverter Stage | Renewable Energy MPPT Converter |
Use Scenario: 24–48 V DC link in brushless DC motor control for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter half-bridge, commutated at ≤ 20 kHz. Use Value: 88.8 A ID rating supports peak motor currents >70 A; robust UIS rating withstands inductive kickback during fault conditions. | Use Scenario: Step-up DC/DC stage in solar microinverter or battery storage system interfacing 30–60 V PV string to 400 V DC bus. IC Role / Device Role / Timing Role: Main switch in interleaved boost converter operating at 100–200 kHz with soft-switching assist. Use Value: 100 V VDS rating provides margin for PV open-circuit transients; low Coss (719 pF) reduces capacitive turn-on loss in ZVS designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8720PBF | RDS(on) = 7.0 mΩ @ 10 V; Qg = 29 nC; TO-220 package; RthJC = 1.0 °C/W | Requires heatsink mounting and PCB cutout; higher gate drive energy; not surface-mount compatible | Select when through-hole assembly or legacy TO-220 thermal infrastructure exists |
| SiR872ADP-T1-RE3 | Same PowerPAK SO-8 package; RDS(on) = 5.2 mΩ @ 10 V; Qg = 28.5 nC; VGS(th) = 1.8–2.8 V | Higher cost; tighter VGS(th) distribution improves parallel operation; slightly higher Qg increases gate loss | Select when lowest possible RDS(on) is required and gate drive capability supports 28.5 nC |
Compared with IRF8720PBF, SIR870ADP-T1-RE3 delivers superior power density and thermal integration via its leadless SO-8 footprint, while SiR872ADP-T1-RE3 offers lower conduction loss at the expense of marginally higher switching loss and cost-making SIR870ADP-T1-RE3 the optimal balance for space-constrained telecom and server DC/DC designs.
Availability
SIR870ADP-T1-RE3 is available at Aetrix Electronics and suitable for fixed telecom infrastructure, high-density server VRMs, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIR870ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR870ADP-T1-RE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 product line, engineered specifically for high-current, high-frequency switching in space-constrained power supplies where thermal performance and SO-8 footprint compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SIR870ADP-T1-RE3 at 70 °C case temperature?
The SIR870ADP-T1-RE3 is rated for 71 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction, assuming proper PCB copper area and no additional heatsinking. At ambient temperature (TA = 70 °C), the rating drops to 18.2 A due to higher junction-to-ambient thermal resistance.
Does SIR870ADP-T1-RE3 support 4.5 V gate drive in practical applications?
Yes, SIR870ADP-T1-RE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed at 10.5 mΩ (max) at VGS = 4.5 V and ID = 15 A. Its VGS(th) range of 1.5–3.0 V ensures strong enhancement with standard 3.3 V or 5 V logic-level drivers, making it suitable for synchronous buck controllers without level-shifting circuitry.
What is the thermal resistance from junction to case (RthJC) for SIR870ADP-T1-RE3, and how is it measured?
The SIR870ADP-T1-RE3 has a typical RthJC of 0.9 °C/W and maximum of 1.2 °C/W, measured from junction to the exposed drain pad on the bottom surface under steady-state conditions. This value is validated per JEDEC JESD51-14 and reflects direct conduction path to PCB copper, not to ambient air-enabling accurate thermal modeling when mounted on thermally enhanced land patterns.
Is SIR870ADP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIR870ADP-T1-RE3 uses the PowerPAK® SO-8 package with identical 1.27 mm pitch, 5.15 mm × 6.15 mm outline, and SO-8 pin numbering. Pin 1 = Source, Pin 2 = Source, Pin 3 = Gate, Pin 4 = Source, Pin 5 = Drain, Pin 6 = Drain, Pin 7 = Drain, Pin 8 = Drain-matching standard SO-8 functional mapping while adding redundant terminals for lower inductance and resistance.
What is the body diode reverse recovery charge (Qrr) of SIR870ADP-T1-RE3, and why does it matter?
The SIR870ADP-T1-RE3 has a typical Qrr of 76 nC and maximum of 140 nC at TJ = 25 °C, IF = 20 A, and di/dt = 100 A/μs. Low Qrr directly reduces reverse recovery loss and associated EMI in synchronous rectification and freewheeling paths-critical for maintaining efficiency above 95 % in high-frequency DC/DC converters.
SIR870ADP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2866 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR870ADP-T1-RE3 FAQ
1.How can I place an order for SIR870ADP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR870ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR870ADP-T1-RE3 reliable?
The price and inventory of SIR870ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR870ADP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR870ADP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR870ADP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR870ADP-T1-RE3?
SIR870ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR870ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR870ADP-T1-RE3?
For technical support, including SIR870ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR870ADP-T1-RE3 requirements.
6.How does Aetrix verify that SIR870ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR870ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR870ADP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR870ADP-T1-RE3?
All SIR870ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR870ADP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR870ADP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR870ADP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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