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Vishay Siliconix SIR872ADP-T1-RE3
- Part No.:
- SIR872ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR872ADP-T1-RE3.pdf
- Description:
- MOSFET N-CH 150V 53.7A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,901
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Product details
Overview
SIR872ADP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 53.7 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0180 Ω at VGS = 10 V and 0.0230 Ω at VGS = 7.5 V. It serves as a high-efficiency primary or secondary side switch in telecom DC/DC converters.
For engineers reviewing the SIR872ADP-T1-RE3 datasheet, SIR872ADP-T1-RE3 pinout, SIR872ADP-T1-RE3 application, or SIR872ADP-T1-RE3 equivalent, key selection criteria include its 150 V VDS rating, low gate charge (22.8 nC typ. at VGS = 7.5 V), robust UIS testing, junction-to-case thermal resistance of 0.9 °C/W, and compatibility with standard SO-8 PCB footprints despite being a leadless package.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and high current density in a compact surface-mount package. Its gate threshold voltage (2.5–4.5 V) supports standard 5 V and 10 V logic-level drive, while dynamic parameters-including Ciss = 1286 pF, Crss = 28 pF, and Qgd = 10 nC-enable fast switching with controlled dv/dt in hard-switched topologies.
The device features integrated body diode with trr = 95 ns (typ.) and Qrr = 280 nC (typ.), suitable for synchronous rectification and freewheeling applications. Thermal design leverages the exposed copper drain pad on the bottom side, delivering DPAK-equivalent junction-to-case performance (RthJC = 0.9 °C/W typ.) while maintaining SO-8 footprint compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Drain-Source Voltage) | 150 V - Supports input rails up to 100 V DC with margin for transient spikes in telecom and industrial DC/DC systems. |
| RDS(on) max. at VGS = 10 V | 0.0180 Ω - Enables <1 W conduction loss at 20 A, critical for high-current primary-side switching. |
| Qg typ. at VGS = 7.5 V | 22.8 nC - Reduces gate drive power and enables efficient operation with standard PWM controllers. |
| ID (Continuous Drain Current, TC = 25 °C) | 53.7 A - Delivers high output power in space-constrained board areas without external heatsinking. |
| RthJC (Junction-to-Case) | 0.9 °C/W (typ.) - Allows direct thermal coupling to PCB copper or heatsink, matching DPAK thermal capability. |
| Body Diode trr | 95 ns (typ.) - Minimizes reverse recovery losses during synchronous rectification or bidirectional switching. |
| UIS Tested | 100 % production tested - Ensures ruggedness against inductive switching stress in real-world converter operation. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, SO-8 footprint compatible, exposed drain pad on bottom side). Dimensions: 5.15 mm × 6.15 mm × 1.04 mm (L × W × H); drain pad occupies majority of bottom surface for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching. |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain configuration connects directly to large PCB copper area for minimal thermal resistance and high pulsed current handling. |
| G (Gate) | Control Input | Single gate terminal located at Pin 1 position per top-view diagram; requires <2 Ω gate resistor to damp ringing due to low Rg (0.3–2 Ω). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Enables 0.0148 Ω RDS(on) typ. at VGS = 10 V, reducing conduction loss by >30 % vs. planar MOSFETs in same package. |
| 100 % Rg and UIS tested | Guarantees gate robustness and avalanche energy handling (EAS = 45 mJ) without derating in unclamped inductive load conditions. |
| PowerPAK® SO-8 package | Provides DPAK-level thermal performance (RthJC = 0.9 °C/W) in SO-8 footprint-no PCB redesign needed for drop-in upgrade. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting environmentally compliant manufacturing. |
| Low Crss / Ciss ratio | Crss/Ciss ≈ 2.2 % minimizes Miller effect, enabling stable 500 kHz+ switching with reduced gate drive requirements. |
Applications
| Telecom DC/DC Converters | Primary-Side Switching |
|---|---|
Use Scenario: High-density 48 V input to 12 V/5 V isolated DC/DC modules in central office and base station power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch in forward or half-bridge topology, operating at 200–500 kHz. Use Value: Low RDS(on) and Qg reduce total switching + conduction losses, enabling >95 % efficiency at full load without forced air cooling. |
Use Scenario: Main power switch in 150 V-rated offline flyback or LLC resonant converters for industrial control power supplies. IC Role / Device Role / Timing Role: High-voltage switching element handling peak drain voltages up to 135 V with 15 V clamp margin. Use Value: 150 V VDS rating and 30 A single-pulse avalanche current (IAS) ensure reliable operation under line surge and startup overvoltage. |
| Secondary-Side Synchronous Rectification | Fixed Telecom Power Distribution |
Use Scenario: Low-voltage, high-current output stage in telecom rectifiers where 5–12 V outputs deliver >40 A. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes, driven by transformer-coupled or controller-based gate signals. Use Value: Body diode trr = 95 ns and Qrr = 280 nC minimize reverse recovery loss, while low RDS(on) cuts conduction loss by >60 % vs. 40 V Schottky. |
Use Scenario: Hot-swap OR-ing FET and redundant power path management in 48 V distributed power architectures. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream subsystems with controlled turn-on slew rate. Use Value: 53.7 A continuous current rating and 100 A pulsed rating support high-availability designs requiring >2× steady-state current headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872ADP-T1-GE3 | Identical die and package; differs only in tape-and-reel packaging (GE3 = Pb-free/halogen-free, RE3 = same spec, alternate reel coding) | No functional or electrical difference; both qualified for same automotive/industrial temperature range (−55 °C to +150 °C) | Select based on distributor inventory and assembly line tape format requirements-not electrical performance. |
| IRF7470PBF | Higher RDS(on) (0.022 Ω @ 10 V), larger Qg (32 nC), SO-8 (leaded) package with higher RthJA (62 °C/W vs. 20 °C/W max for SIR872ADP) | Not suitable for high-frequency, high-current applications where thermal limits or switching loss dominate; requires heatsink above ~10 A | Use only if legacy SO-8 footprint must retain leads; avoid when upgrading for efficiency or power density. |
Compared with IRF7470PBF, SIR872ADP-T1-RE3 delivers 22 % lower RDS(on), 29 % less gate charge, and 3× better thermal resistance-enabling 30 % higher current in same PCB area without thermal derating.
Availability
SIR872ADP-T1-RE3 is available at Aetrix Electronics and suitable for telecom DC/DC converters, primary-side switching in industrial SMPS, and fixed telecom power distribution requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIR872ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIR872ADP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered for high-current, high-voltage switching in space-constrained telecom and industrial power supplies where thermal performance and ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SIR872ADP-T1-RE3 at 70 °C case temperature?
The SIR872ADP-T1-RE3 is rated for 43 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8 package under sustained high-power operation and must be applied in thermal design calculations alongside RthJC = 0.9 °C/W and ambient conditions. The SIR872ADP-T1-RE3 maintains full 150 V VDS capability across this current range.
Does SIR872ADP-T1-RE3 support logic-level gate drive?
Yes, the SIR872ADP-T1-RE3 has a gate threshold voltage (VGS(th)) of 2.5–4.5 V, enabling reliable turn-on with 5 V microcontroller or PWM controller outputs. At VGS = 5 V, RDS(on) is not guaranteed, but typical values remain below 0.035 Ω-sufficient for many medium-duty applications. For full 0.0180 Ω RDS(on) performance, 10 V gate drive is recommended. The SIR872ADP-T1-RE3 also supports 7.5 V drive with RDS(on) max. of 0.0230 Ω.
Is SIR872ADP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?
Yes-the SIR872ADP-T1-RE3 uses the PowerPAK® SO-8 package, which matches the mechanical footprint, pad layout, and pin numbering (G, S, S, S, S, D, D, D, D) of standard SO-8 devices. However, it is leadless: the drain terminals are exposed copper pads on the bottom, not bent leads. PCB land patterns must follow Vishay's recommended minimum pads (Document 72599) to ensure thermal and mechanical reliability. The SIR872ADP-T1-RE3 does not require PCB redesign when replacing SO-8 MOSFETs.
What is the body diode reverse recovery charge (Qrr) of SIR872ADP-T1-RE3, and why does it matter?
The SIR872ADP-T1-RE3 has a typical body diode reverse recovery charge (Qrr) of 280 nC at TJ = 25 °C, with a maximum of 560 nC. This parameter directly impacts switching losses in synchronous rectification and freewheeling applications: lower Qrr reduces diode tail current and associated heat generation during turn-off. In high-frequency DC/DC converters, the SIR872ADP-T1-RE3's low Qrr contributes to >2 % efficiency gain versus older MOSFETs with Qrr > 600 nC. The SIR872ADP-T1-RE3 also specifies trr = 95 ns (typ.), confirming fast recovery behavior.
Can SIR872ADP-T1-RE3 be used in avalanche-energy-intensive applications like unclamped inductive switching?
Yes-the SIR872ADP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested per JEDEC JESD24-1, with a rated single-pulse avalanche energy (EAS) of 45 mJ and single-pulse avalanche current (IAS) of 30 A. These ratings validate its ability to safely absorb inductive energy during fault conditions or in circuits lacking snubbers. Designers must limit repetitive avalanche operation and verify pulse width, duty cycle, and junction temperature rise using the SOA curves in the datasheet. The SIR872ADP-T1-RE3's ruggedness makes it suitable for telecom hot-swap and motor drive protection circuits.
SIR872ADP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1286 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR872ADP-T1-RE3 FAQ
1.How can I place an order for SIR872ADP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR872ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR872ADP-T1-RE3 reliable?
The price and inventory of SIR872ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR872ADP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR872ADP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR872ADP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR872ADP-T1-RE3?
SIR872ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR872ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR872ADP-T1-RE3?
For technical support, including SIR872ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR872ADP-T1-RE3 requirements.
6.How does Aetrix verify that SIR872ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR872ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR872ADP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR872ADP-T1-RE3?
All SIR872ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR872ADP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR872ADP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR872ADP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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