Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR874DP-T1-GE3

Name: SIR874DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR874DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIR874DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR874DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 20A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,605

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIR874DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, optimized for high-side synchronous rectifier operation in DC/DC converters. It delivers R_DS(on) = 0.0094 Ω at V_GS = 10 V, 8 nC total gate charge, and 20 A continuous drain current at T_C = 25 °C - enabling high-efficiency power delivery in notebook CPU core and server DC/DC applications.

For engineers reviewing the SIR874DP-T1-GE3 datasheet, SIR874DP-T1-GE3 pinout, SIR874DP-T1-GE3 application, or SIR874DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V (0.012 Ω), 100 % UIS-tested ruggedness, halogen-free and RoHS-compliant construction, and thermal resistance R_thJC = 3.5 °C/W for high-power-density board designs.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve enhanced conduction efficiency and fast switching performance. Its gate charge profile (Q_g = 8 nC at V_GS = 4.5 V) and low Crss (76 pF) support high-frequency synchronous rectification with minimal switching loss.

The device is characterized for stable operation across -55 °C to +150 °C junction temperature range and features a body diode with t_rr = 14–28 ns and Q_rr = 5–10 nC, critical for minimizing reverse recovery losses in high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - supports input rails up to 25 V in point-of-load DC/DC stages
R_DS(on)	0.0094 Ω @ V_GS = 10 V - enables <19 mW conduction loss at 10 A
Q_g	8 nC @ V_GS = 4.5 V - reduces gate drive power and enables efficient 500 kHz+ switching
I_D (continuous)	20 A @ T_C = 25 °C - sustains high-current loads without derating on thermally enhanced PCBs
R_thJC	3.5 °C/W - allows direct heatsinking via exposed drain pad for >20 W power dissipation
t_rr	14–28 ns - minimizes shoot-through risk and EMI in synchronous buck topologies

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with 1.07 mm profile and exposed copper drain pad on bottom side. The package provides low thermal resistance and high current capability through four parallel drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≤20 V drive; 100 % R_g tested for consistency
S	Source	Reference node for gate drive and current sensing; tied to power ground in high-side configuration
D (pins 1, 2, 3, 8)	Drain	Four paralleled terminals connect to input rail; exposed bottom pad serves as primary thermal path and current return

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Delivers 23 % lower R_DS(on) vs. prior generation at same die size, improving power density
Optimized for high-side synchronous rectifier	Low Q_gd/Q_g ratio (2.3/8 nC) ensures clean turn-off and reduced Miller-induced oscillation
100 % UIS tested	Guarantees avalanche energy handling (E_AS = 20 mJ) without derating in transient overload conditions
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/96/EC for environmentally regulated end equipment

Applications

Notebook CPU Core – High-Side Switch	Game Machine DC/DC – High-Side
Use Scenario: Regulating core voltage for mobile Intel/AMD processors under dynamic load transients up to 100 A/µs. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 300–600 kHz with precise dead-time control. Use Value: 0.0094 Ω R_DS(on) at 10 V reduces conduction loss by 35 % versus 0.0145 Ω alternatives, extending battery runtime.	Use Scenario: Providing stable 1.2 V/20 A supply to GPU and SoC in handheld gaming consoles with aggressive thermal constraints. IC Role / Device Role / Timing Role: High-side switch in compact 2-layer PCB DC/DC module; operates with 4.5 V gate drive from controller IC. Use Value: 0.012 Ω R_DS(on) at 4.5 V enables full-rated current without gate-boost circuitry, simplifying layout and BOM.
Server DC/DC – High-Side	Industrial FPGA Power Rail – High-Side
Use Scenario: Delivering 3.3 V/15 A to memory subsystems in 1U rack servers with airflow-limited cooling. IC Role / Device Role / Timing Role: Primary high-side FET in interleaved buck stage; synchronized to 500 kHz clock with tight phase margin. Use Value: R_thJC = 3.5 °C/W allows 29.8 W P_D at T_C = 25 °C - sustaining full load without external heatsink.	Use Scenario: Supplying configurable 1.0–1.8 V rails to Xilinx/Intel FPGAs in programmable logic controllers with extended temperature operation. IC Role / Device Role / Timing Role: High-side synchronous rectifier in isolated fly-buck-derived regulator; rated for -40 °C to +85 °C ambient. Use Value: -55 °C to +150 °C T_J rating ensures reliable startup and operation across industrial thermal cycles.

Notebook CPU Core – High-Side Switch

Game Machine DC/DC – High-Side

Use Scenario: Regulating core voltage for mobile Intel/AMD processors under dynamic load transients up to 100 A/µs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switches at 300–600 kHz with precise dead-time control.

Use Value: 0.0094 Ω R_DS(on) at 10 V reduces conduction loss by 35 % versus 0.0145 Ω alternatives, extending battery runtime.

Use Scenario: Providing stable 1.2 V/20 A supply to GPU and SoC in handheld gaming consoles with aggressive thermal constraints.

IC Role / Device Role / Timing Role: High-side switch in compact 2-layer PCB DC/DC module; operates with 4.5 V gate drive from controller IC.

Use Value: 0.012 Ω R_DS(on) at 4.5 V enables full-rated current without gate-boost circuitry, simplifying layout and BOM.

Server DC/DC – High-Side

Industrial FPGA Power Rail – High-Side

Use Scenario: Delivering 3.3 V/15 A to memory subsystems in 1U rack servers with airflow-limited cooling.

IC Role / Device Role / Timing Role: Primary high-side FET in interleaved buck stage; synchronized to 500 kHz clock with tight phase margin.

Use Value: R_thJC = 3.5 °C/W allows 29.8 W P_D at T_C = 25 °C - sustaining full load without external heatsink.

Use Scenario: Supplying configurable 1.0–1.8 V rails to Xilinx/Intel FPGAs in programmable logic controllers with extended temperature operation.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in isolated fly-buck-derived regulator; rated for -40 °C to +85 °C ambient.

Use Value: -55 °C to +150 °C T_J rating ensures reliable startup and operation across industrial thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-side synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 0.012 Ω @ 10 V; Q_g = 6.5 nC; 18 A I_D	Lower current rating and higher on-resistance - suitable for ≤15 A loads with tighter gate drive budgets	Select when prioritizing lowest Q_g over peak current capacity
IRLHS6242PBF	R_DS(on) = 0.011 Ω @ 4.5 V; Q_g = 10.5 nC; SO-8 package; no 100 % UIS test	Higher gate charge increases driver loss; lacks avalanche ruggedness validation for high-reliability systems	Acceptable for cost-sensitive consumer applications where transient robustness is secondary

Compared with SiR872DP-T1-GE3 and IRLHS6242PBF, the SIR874DP-T1-GE3 offers superior current density (20 A), lowest R_DS(on) at both 4.5 V and 10 V, and verified UIS performance - making it optimal for thermally constrained, high-reliability high-side DC/DC stages.

Availability

SIR874DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core regulation, game machine DC/DC conversion, and server power delivery requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for SIR874DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability solutions.

The SiR874DP product line targets high-frequency, high-current synchronous rectification in portable and infrastructure power supplies - engineered specifically for low R_DS(on), low Q_g, and rugged avalanche performance in space-constrained layouts.

FAQ

What is the maximum continuous drain current rating for the SIR874DP-T1-GE3 at 70 °C case temperature?

The SIR874DP-T1-GE3 supports 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited conduction capability under steady-state thermal conditions and is validated per JEDEC JESD51-2 standards using a 1" × 1" FR4 test board. Derating is not required between 25 °C and 70 °C case temperature.

Does the SIR874DP-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SIR874DP-T1-GE3 has a guaranteed V_GS(th) range of 1.1 V to 2.2 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 µA. This range ensures reliable turn-on with standard 3.3 V or 5 V gate drivers while maintaining noise immunity against spurious triggering in high-dV/dt environments.

Is the SIR874DP-T1-GE3 suitable for high-side synchronous rectifier applications with 4.5 V gate drive?

Yes, the SIR874DP-T1-GE3 is explicitly optimized for high-side synchronous rectifier operation with 4.5 V gate drive. Its R_DS(on) is specified at 0.012 Ω under V_GS = 4.5 V and I_D = 7 A, and its low Q_gd/Q_g ratio (2.3/8 nC) minimizes Miller plateau effects - enabling clean commutation without gate boosting in buck converters.

What thermal resistance values are specified for the SIR874DP-T1-GE3 package?

The SIR874DP-T1-GE3 specifies R_thJC = 3.5 °C/W (typical) and R_thJA = 27 °C/W (typical) for t ≤ 10 s on a 1" × 1" FR4 board. The low R_thJC confirms effective heat transfer from junction to case via the exposed drain pad, while R_thJA reflects natural convection performance - critical for thermal design in fanless or low-airflow systems.

How is avalanche ruggedness verified for the SIR874DP-T1-GE3?

The SIR874DP-T1-GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per JEDEC JESD24-11. Each unit is validated to withstand E_AS = 20 mJ at T_J = 25 °C, corresponding to single-pulse avalanche current I_AS = 20 A with L = 0.1 mH. This ensures robustness against inductive kickback during hard-switching faults in DC/DC power stages.

SIR874DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 985 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.9W (Ta), 29.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR874DP-T1-GE3 FAQ

1.How can I place an order for SIR874DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR874DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR874DP-T1-GE3 reliable?

The price and inventory of SIR874DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR874DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR874DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR874DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR874DP-T1-GE3?

SIR874DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR874DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR874DP-T1-GE3?

For technical support, including SIR874DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR874DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR874DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR874DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR874DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR874DP-T1-GE3?

All SIR874DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR874DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR874DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR874DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …