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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR876ADP-T1-GE3

Name: SIR876ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR876ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR876ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR876ADP-T1-GE3.pdf

Description:: MOSFET N-CH 100V 40A PPAK SO-8

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Product details

Overview

SIR876ADP-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 40 A (T_C = 25 °C) TrenchFET® power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 9.0 mΩ at V_GS = 10 V, Q_g = 32.8 nC (typ.), and 100 % R_g and UIS tested - used as primary-side switch in telecom/server 48 V full/half-bridge DC/DC converters.

For engineers reviewing the SIR876ADP-T1-GE3 datasheet, SIR876ADP-T1-GE3 pinout, SIR876ADP-T1-GE3 application, or SIR876ADP-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, low 9.0 mΩ on-resistance at 10 V gate drive, thermal performance matching DPAK (R_thJC = 1.6 °C/W max), and compatibility with standard SO-8 PCB footprints despite being a leadless package.

Technical Context

This MOSFET employs TrenchFET® technology to achieve high current density and low conduction losses. Its gate charge profile (Q_g = 32.8 nC typ., Q_gd = 7.4 nC) supports efficient switching in hard-switched topologies up to several hundred kHz.

The device features a robust body diode (t_rr = 44 ns typ., Q_rr = 50 nC) and is rated for single-pulse avalanche energy E_AS = 31.2 mJ, enabling reliable operation under transient overvoltage conditions in DC/DC primary-side switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 48 V bus systems with margin against transients.
R_DS(on) max @ V_GS = 10 V	10.8 mΩ - Enables low conduction loss at full-rated 40 A continuous drain current when mounted on heatsinked PCB.
Q_g typ.	32.8 nC - Determines gate drive power requirement; compatible with standard MOSFET drivers delivering ≥1 A peak.
I_D continuous @ T_C = 25 °C	40 A - Maximum steady-state current achievable with case temperature maintained at 25 °C via thermal management.
R_thJC max.	2.0 °C/W - Junction-to-case thermal resistance defines minimum heatsinking needed to sustain power dissipation without exceeding 150 °C junction temperature.
t_rr typ.	44 ns - Body diode reverse recovery time impacts turn-on loss in synchronous rectification or half-bridge freewheeling.
E_AS	31.2 mJ - Single-pulse avalanche energy rating validates ruggedness during inductive switching events without failure.

Pinout & Package

Package: PowerPAK® SO-8 - leadless, surface-mount package with same 6.15 mm × 5.15 mm footprint and pinout as standard SO-8, featuring exposed copper drain pad on bottom for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching.
5	Gate (G)	Single gate input; low 0.8 Ω max gate resistance enables fast, controlled turn-on/turn-off with minimal ringing.
6, 7, 8	Drain (D)	Three parallel drain terminals connected to large bottom-side copper pad - primary thermal and current path to PCB.

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers 9.0 mΩ R_DS(on) at 10 V in SO-8 footprint - 3× lower on-resistance than typical SO-8 MOSFETs of same size.
100 % R_g and UIS tested	Ensures gate robustness against ESD and guaranteed avalanche capability per JEDEC JESD22-A115, critical for primary-side reliability.
PowerPAK® SO-8 thermal design	R_thJC = 1.6 °C/W max matches DPAK performance - enables higher power density than standard SO-8 without layout change.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912), supporting environmentally compliant manufacturing.

Applications

Telecom Server DC/DC Primary Switch	Industrial 48 V Power Supply
Use Scenario: High-efficiency 48 V input, 12 V output full-bridge DC/DC converter in 1U server PSU. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with synchronous rectification on secondary side. Use Value: 9.0 mΩ R_DS(on) minimizes conduction loss at 40 A peak; low Q_g reduces driver loss and improves efficiency above 95 % at full load.	Use Scenario: Isolated 48 V to 24 V industrial power module for PLC I/O backplanes. IC Role / Device Role / Timing Role: Half-bridge high-side switch in phase-shifted ZVS topology with 100 V bus derating. Use Value: 31.2 mJ E_AS withstands bus transients during load dump; rugged body diode supports ZVS soft-switching transitions.
DC/DC Converter Primary Side	High-Density Telecom Rectifier
Use Scenario: Compact 100 W isolated flyback or active-clamp forward converter in optical line terminal (OLT) equipment. IC Role / Device Role / Timing Role: Main power switch handling 40 A pulsed drain current (I_DM = 80 A) during startup and overload. Use Value: 80 A pulsed rating ensures safe operation during inrush and short-circuit events; low C_iss = 1630 pF maintains stable gate drive at high frequency.	Use Scenario: High-density 48 V input rectifier stage in multi-output telecom brick supplying +5 V, +3.3 V, +12 V rails. IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter operating near zero-voltage switching boundary. Use Value: 44 ns t_rr and 50 nC Q_rr minimize dead-time loss and reduce EMI generation during body diode commutation.

Telecom Server DC/DC Primary Switch

Industrial 48 V Power Supply

Use Scenario: High-efficiency 48 V input, 12 V output full-bridge DC/DC converter in 1U server PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with synchronous rectification on secondary side.

Use Value: 9.0 mΩ R_DS(on) minimizes conduction loss at 40 A peak; low Q_g reduces driver loss and improves efficiency above 95 % at full load.

Use Scenario: Isolated 48 V to 24 V industrial power module for PLC I/O backplanes.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in phase-shifted ZVS topology with 100 V bus derating.

Use Value: 31.2 mJ E_AS withstands bus transients during load dump; rugged body diode supports ZVS soft-switching transitions.

DC/DC Converter Primary Side

High-Density Telecom Rectifier

Use Scenario: Compact 100 W isolated flyback or active-clamp forward converter in optical line terminal (OLT) equipment.

IC Role / Device Role / Timing Role: Main power switch handling 40 A pulsed drain current (I_DM = 80 A) during startup and overload.

Use Value: 80 A pulsed rating ensures safe operation during inrush and short-circuit events; low C_iss = 1630 pF maintains stable gate drive at high frequency.

Use Scenario: High-density 48 V input rectifier stage in multi-output telecom brick supplying +5 V, +3.3 V, +12 V rails.

IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter operating near zero-voltage switching boundary.

Use Value: 44 ns t_rr and 50 nC Q_rr minimize dead-time loss and reduce EMI generation during body diode commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872ADP-T1-GE3	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 27.5 nC; lower current rating (32 A @ T_C = 25 °C)	Lower conduction loss penalty but reduced peak current headroom; better suited for space-constrained 30 A designs.	Select when lower gate charge prioritized over absolute current capability and thermal margin is sufficient.
IRF7470PBF	SO-8 package; R_DS(on) = 11.5 mΩ @ 10 V; R_thJA = 62 °C/W (vs. 25 °C/W for SIR876ADP); no avalanche rating specified	Higher thermal resistance limits power handling on standard PCB; lacks documented UIS capability for harsh environments.	Consider only for cost-sensitive, low-duty-cycle applications where thermal design allows conservative derating.

Compared with SiR872ADP-T1-GE3, SIR876ADP-T1-GE3 delivers 25 % lower R_DS(on) and 17 % higher continuous current, while IRF7470PBF trades off thermal performance and ruggedness for legacy SO-8 compatibility without leadless advantages.

Availability

SIR876ADP-T1-GE3 is available at Aetrix Electronics and suitable for telecom server PSUs, industrial 48 V power supplies, and high-density DC/DC converter primary-side switching requiring stable component supply and long-term production continuity.

Supply support for SIR876ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK® SO-8 product line was developed to deliver DPAK-level thermal performance in an SO-8 footprint - specifically targeting high-current, high-frequency DC/DC conversion in space-constrained telecom and computing infrastructure where thermal density is critical.

FAQ

What is the maximum continuous drain current rating for SIR876ADP-T1-GE3 at 70 °C case temperature?

The SIR876ADP-T1-GE3 supports 40 A continuous drain current at T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management using the exposed drain pad and adequate copper area per Vishay Application Note AN821. The device maintains this current capability across its full operating junction temperature range of –55 °C to +150 °C.

Does SIR876ADP-T1-GE3 support gate drive voltages below 10 V, and what is its R_DS(on) at 4.5 V?

Yes, SIR876ADP-T1-GE3 is fully characterized down to 4.5 V gate drive. Its R_DS(on) is 14.5 mΩ max at V_GS = 4.5 V and I_D = 10 A, enabling use with 5 V logic-level controllers. The gate threshold voltage V_GS(th) ranges from 1.5 V to 2.8 V, ensuring reliable turn-on even with marginal gate drive margins in noisy environments.

Is SIR876ADP-T1-GE3 pin-compatible with standard SO-8 MOSFETs, and what layout changes are required?

Yes, SIR876ADP-T1-GE3 uses the identical 6.15 mm × 5.15 mm footprint and pinout as standard SO-8 packages, allowing direct substitution on existing layouts. No PCB redesign is needed, though optimal thermal performance requires connecting the bottom-side drain pad to a large copper pour - recommended minimum land pattern is provided in Vishay Application Note 826.

What is the body diode reverse recovery performance of SIR876ADP-T1-GE3, and why does it matter in bridge topologies?

The SIR876ADP-T1-GE3 body diode has t_rr = 44 ns typ. and Q_rr = 50 nC at I_F = 10 A and dI/dt = 100 A/μs. In half-bridge or full-bridge configurations, fast, low-charge recovery minimizes voltage spikes and switching loss during cross-conduction intervals, directly improving efficiency and reducing EMI in high-frequency DC/DC converters.

How is the thermal performance of SIR876ADP-T1-GE3 validated, and what is its R_thJC value?

SIR876ADP-T1-GE3 is characterized with R_thJC = 1.6 °C/W typical and 2.0 °C/W maximum under steady-state conditions, measured junction-to-case (drain). This value is validated per JESD51-1 and matches DPAK thermal performance - confirmed in Vishay Application Note AN821, which shows 10 °C/W improvement over standard SO-8 when mounted on identical PCBs.

SIR876ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1630 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR876ADP-T1-GE3 FAQ

1.How can I place an order for SIR876ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR876ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR876ADP-T1-GE3 reliable?

The price and inventory of SIR876ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR876ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR876ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR876ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR876ADP-T1-GE3?

SIR876ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR876ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR876ADP-T1-GE3?

For technical support, including SIR876ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR876ADP-T1-GE3 requirements.

6.How does Aetrix verify that SIR876ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR876ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR876ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR876ADP-T1-GE3?

All SIR876ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR876ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR876ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR876ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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