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Vishay Siliconix SIR876DP-T1-GE3
- Part No.:
- SIR876DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR876DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,590
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Product details
Overview
SIR876DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with RDS(on) = 0.0108 Ω at VGS = 10 V, 40 A continuous drain current (TC = 25 °C), and 16.9 nC total gate charge - used as primary-side switch in telecom/server 48 V DC/DC converters.
For engineers reviewing the SIR876DP-T1-GE3 datasheet, SIR876DP-T1-GE3 pinout, SIR876DP-T1-GE3 application, or SIR876DP-T1-GE3 equivalent, key selection criteria include its 100 V VDS, low RDS(on) at 4.5 V drive, 100 % UIS testing, thermal resistance RthJC = 1.6 °C/W, and halogen-free RoHS-compliant construction.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for high-efficiency switching in hard-switched and resonant topologies. Its gate charge profile (Qg = 16.9 nC at VGS = 4.5 V) and low Ciss (1640 pF) support fast turn-on with reduced driver loss, while the body diode exhibits trr = 52 ns and Qrr = 65 nC for improved light-load efficiency in synchronous rectification.
The device is characterized for operation from –55 °C to +150 °C junction temperature, with guaranteed RDS(on) over temperature and specified avalanche energy (EAS = 31.2 mJ). It features 100 % Rg and UIS screening per unit, ensuring robustness in high-stress power conversion stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V bus systems with ≥2× voltage margin against transients |
| RDS(on) | 0.0108 Ω at VGS = 10 V - enables <1 W conduction loss at 30 A, critical for high-current DC/DC phases |
| ID (continuous) | 40 A at TC = 25 °C - package-limited rating suitable for high-power density board layouts |
| Qg | 16.9 nC at VGS = 4.5 V - allows efficient gate drive with standard 5 V logic-level controllers |
| RthJC | 1.6 °C/W (typ.) - enables direct heatsinking to PCB copper or external metal, supporting >40 W dissipation |
| EAS | 31.2 mJ - withstands single-pulse inductive energy without failure in flyback or LLC primary switches |
| VGS(th) | 1.2–2.8 V - ensures reliable enhancement-mode turn-on with standard PWM IC gate drivers |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with exposed drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm. Thermal performance relies on soldered drain pad connection to PCB thermal plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source | Reference node for gate drive; connects to low-side return path and current sense resistor |
| 2 (S) | Source | Second source terminal - paralleled internally with Pin 1 for lower source inductance |
| 3 (S) | Source | Third source terminal - reduces loop inductance in high-dI/dt switching applications |
| 4 (G) | Gate | Control input; requires low-impedance drive due to Qg = 16.9 nC at 4.5 V |
| 5 (D) | Drain | Main power output node; electrically connected to exposed bottom paddle for thermal and current conduction |
| 6 (D) | Drain | Second drain terminal - internal parallel connection to Pin 5 and bottom paddle |
| 7 (D) | Drain | Third drain terminal - enhances current sharing and reduces package inductance |
| 8 (D) | Drain | Fourth drain terminal - completes low-inductance, high-current drain path to PCB thermal plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) × area among 100 V SO-8 MOSFETs, enabling smaller PCB footprints in multi-phase VRMs |
| 100 % UIS tested | Each unit validated for unclamped inductive switching stress - eliminates field failures in hard-switched DC/DC primaries |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for telecom and industrial equipment sold in EU/China markets |
| Exposed drain paddle | Provides dual-path thermal conduction: vertical (to PCB) and lateral (through package edges), lowering effective RthJA |
| Low Qgd/Qg ratio | Qgd = 7.9 nC / Qg = 16.9 nC → 47 % - improves Miller immunity and reduces switching loss during cross-conduction |
Applications
| Telecom/Server 48 V DC/DC | Industrial Motor Drive Stages |
|---|---|
Use Scenario: Primary-side switch in isolated full-bridge or phase-shifted ZVS converter powering 12 V or 5 V intermediate bus in 48 V server racks. IC Role / Device Role / Timing Role: High-side N-channel power switch operating at 100–500 kHz with synchronous rectification on secondary side. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >95 % efficiency at 1 kW per phase while maintaining thermal headroom on dense PCBs. | Use Scenario: Half-bridge leg in 24–48 V BLDC motor control for factory automation actuators requiring regenerative braking. IC Role / Device Role / Timing Role: High-frequency PWM-controlled power switch handling bidirectional current during active freewheeling and regeneration. Use Value: Robust body diode (trr = 52 ns, Qrr = 65 nC) minimizes reverse recovery loss during commutation, improving torque linearity and reducing EMI. |
| DC/DC Primary Side Switch | Industrial Power Supplies |
Use Scenario: Main switching element in 100 V-input offline flyback or forward converter for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Single-ended primary switch rated for 100 V breakdown with margin against line surges up to 150 V. Use Value: Guaranteed VDS = 100 V and EAS = 31.2 mJ ensure reliable operation under 300 Vpk surge conditions without snubber redesign. | Use Scenario: Output stage switch in programmable DC power supply delivering 0–40 V / 0–30 A with fast transient response. IC Role / Device Role / Timing Role: Low-loss series pass element in linear-plus-switching hybrid regulation architecture. Use Value: RDS(on) = 0.0108 Ω at 10 V enables <0.5 W dropout loss at 30 A, reducing heatsink size and improving thermal stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF8720PBF | RDS(on) = 0.012 Ω at 10 V; higher Qg = 22 nC; TO-220 package | Requires larger PCB area and external heatsink; unsuitable for ultra-thin server modules | Prefer SIR876DP-T1-GE3 where space, thermal resistance, and gate drive voltage ≤5 V are critical |
| DMN10H100LKQ-13 | RDS(on) = 0.0115 Ω at 10 V; same PowerSO-8 footprint; no UIS screening | Lacks 100 % UIS test guarantee; lower avalanche ruggedness margin in high-energy circuits | Select SIR876DP-T1-GE3 when unclamped inductive stress reliability is mandatory |
Compared with IRF8720PBF and DMN10H100LKQ-13, the SIR876DP-T1-GE3 offers superior thermal performance (RthJC = 1.6 °C/W vs. >3.0 °C/W), lower gate charge at 4.5 V, and production-screened UIS capability - making it optimal for compact, high-reliability 48 V telecom and industrial DC/DC designs.
Availability
SIR876DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial motor drives, and 48 V DC/DC converters requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SIR876DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SiR876DP product line delivers high-current, low-RDS(on) TrenchFET® MOSFETs for primary-side switching in high-density, high-efficiency 48 V infrastructure power systems.
FAQ
What is the maximum continuous drain current rating for SIR876DP-T1-GE3 at 70 °C case temperature?
The SIR876DP-T1-GE3 supports 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area connected to the exposed drain paddle. Derating begins above 70 °C case temperature per the published current derating curve.
Does SIR876DP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, the SIR876DP-T1-GE3 is fully characterized down to VGS = 4.5 V, with RDS(on) = 0.0145 Ω and Qg = 16.9 nC at that voltage. Its VGS(th) range of 1.2–2.8 V ensures strong enhancement-mode turn-on with standard 4.5 V logic-level gate drivers, making it suitable for controller ICs without dedicated high-side level shifters.
Is SIR876DP-T1-GE3 qualified for automotive applications?
No, the SIR876DP-T1-GE3 is not AEC-Q101 qualified and is intended for industrial, telecom, and computing applications. Vishay does not specify automotive-grade reliability testing, temperature cycling, or humidity bias data for this part. For automotive use, consult Vishay's AQ-series MOSFETs such as the SQJQ810E.
What is the thermal resistance from junction to case (RthJC) for SIR876DP-T1-GE3?
The SIR876DP-T1-GE3 has a typical junction-to-case thermal resistance (RthJC) of 1.6 °C/W, with a maximum of 2.0 °C/W, measured from junction to the drain paddle. This value assumes full solder coverage of the exposed drain pad to a minimum 1" × 1" FR4 copper area - critical for achieving rated power dissipation of 62.5 W at TC = 25 °C.
How is the body diode performance of SIR876DP-T1-GE3 specified, and why does it matter?
The SIR876DP-T1-GE3 body diode is characterized with VSD = 0.76–1.1 V at IS = 4 A, trr = 52–100 ns, and Qrr = 65–120 nC. These parameters directly impact efficiency and EMI in non-synchronous or pseudo-synchronous topologies - low Qrr reduces recovery loss, while tight trr distribution improves timing predictability in hard-switched converters.
SIR876DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1640 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR876DP-T1-GE3 FAQ
1.How can I place an order for SIR876DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR876DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR876DP-T1-GE3 reliable?
The price and inventory of SIR876DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR876DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR876DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR876DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR876DP-T1-GE3?
SIR876DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR876DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR876DP-T1-GE3?
For technical support, including SIR876DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR876DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR876DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR876DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR876DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR876DP-T1-GE3?
All SIR876DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR876DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR876DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR876DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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