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Vishay Siliconix SIR878DP-T1-GE3
- Part No.:
- SIR878DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR878DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,695
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Product details
Overview
SIR878DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 14 mΩ at VGS = 10 V, 40 A continuous drain current (TC = 25 °C), and 13.6 nC total gate charge - optimized for high-efficiency DC/DC primary-side switching in telecom/server 48 V full/half-bridge converters.
For engineers reviewing the SIR878DP-T1-GE3 datasheet, SIR878DP-T1-GE3 pinout, SIR878DP-T1-GE3 application, or SIR878DP-T1-GE3 equivalent, key selection criteria include verified 100 V VDS, low RDS(on) at 4.5 V–10 V drive, thermal resistance RthJC = 2.1 °C/W, and halogen-free/RoHS-compliant construction per IEC 61249-2-21.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical Ciss = 1250 pF, Coss = 680 pF, and Qgd = 6.4 nC enable efficient hard-switching operation up to several hundred kHz. Its gate threshold voltage (VGS(th) = 1.2–2.8 V) supports robust 4.5 V logic-level drive while maintaining noise immunity.
The device integrates 100 % Rg and UIS testing per production lot, and its PowerPAK® SO-8 leadless package features exposed copper drain pads for low-inductance, high-current PCB mounting - with validated thermal performance up to TJ = 150 °C and RthJA ≤ 25 °C/W on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V telecom/server DC/DC converters with 2× input margin and transient headroom. |
| RDS(on) | 0.014 Ω @ VGS = 10 V - enables <1.4 W conduction loss at 10 A, critical for high-density power stages. |
| ID (cont.) | 40 A @ TC = 25 °C - rated for high-current half-bridge legs without forced air or heatsink under moderate ambient. |
| Qg | 13.6 nC @ VGS = 4.5 V - ensures fast turn-on with standard gate drivers, reducing switching losses below 200 ns. |
| RthJC | 2.1 °C/W (typ.) - allows direct thermal coupling to PCB copper pour or heatsink, supporting >28 W steady-state dissipation. |
| VGS(th) | 1.2–2.8 V - compatible with 3.3 V and 5 V control logic while avoiding spurious turn-on during noise transients. |
| EAS | 20 mJ - withstands single-pulse avalanche energy events common in inductive load switching or fault conditions. |
Pinout & Package
Package: PowerPAK® SO-8 - leadless surface-mount package with exposed copper drain terminals on bottom side; 6.15 mm × 5.15 mm footprint; RoHS-compliant, halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives PWM signal; low 0.5–4.6 Ω gate resistance enables stable driver interface and dV/dt immunity. |
| S (Source) | Reference node | Common return path for load current and gate drive; tied to power ground plane for minimal loop inductance. |
| D (Drain) | High-side switch output | Four parallel internal drain connections routed to bottom-exposed copper pads - optimized for high-current, low-thermal-resistance PCB mounting. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers industry-leading RDS(on) × Qg figure-of-merit (0.19 mΩ·nC) for reduced conduction + switching loss trade-off. |
| 100 % Rg and UIS tested | Ensures gate robustness and unclamped inductive switching reliability across full production lot - no screening escapes. |
| PowerPAK® SO-8 leadless design | Eliminates lead inductance and solder joint fatigue; enables >30 % lower RthJC vs. standard SO-8, improving thermal headroom. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for telecom infrastructure and industrial equipment certifications. |
Applications
| Telecom/Server DC/DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: Primary-side switch in isolated full-bridge 48 V input DC/DC modules powering base station RF amplifiers. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in synchronous rectified topology, switching at 200–500 kHz with 100 V blocking capability. Use Value: Low RDS(on) and Qg reduce total power loss by ≥1.2 W per device vs. legacy SO-8 MOSFETs, enabling higher power density and cooler operation. | Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: Fast-switching power stage element handling bidirectional current up to 30 A peak with body diode recovery trr = 45–90 ns. Use Value: Verified 20 mJ EAS rating prevents failure during motor phase commutation faults, improving system robustness without snubbers. |
| High-Efficiency AC/DC Adapters | Renewable Energy Inverters |
Use Scenario: Active clamp flyback primary switch in 65–100 W laptop adapters meeting Level VI efficiency standards. IC Role / Device Role / Timing Role: High-voltage switching transistor operating with ZVS at 100 kHz, leveraging low Coss = 680 pF and Qgd = 6.4 nC. Use Value: Reduced gate charge minimizes driver power consumption and improves light-load efficiency by 0.8–1.1 % over comparable 100 V MOSFETs. | Use Scenario: DC link switching in micro-inverters for residential solar panels with 60–100 V PV string inputs. IC Role / Device Role / Timing Role: N-channel switch in interleaved boost stage, requiring stable 100 V VDS and low temperature coefficient of RDS(on). Use Value: RDS(on) drift <0.5 %/°C above 25 °C ensures predictable conduction loss across -40 to +125 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 44 mΩ @ 10 V; TO-220 package; RthJC = 1.5 °C/W but larger footprint and higher parasitic inductance. | Lower switching frequency suitability (<100 kHz); requires heatsink for >15 A continuous operation. | Select when cost sensitivity outweighs board space and efficiency; not suitable for dense, high-frequency telecom designs. |
| IXTP1R1N100D2 | RDS(on) = 1.1 Ω @ 10 V; TO-220FP package; higher voltage rating (1000 V) but 78× higher on-resistance. | Designed for HV flyback snubber or PFC hold-up, not primary-side switching. | Only consider for ultra-high-voltage niche cases; unsuitable as functional alternative due to order-of-magnitude RDS(on) mismatch. |
Compared with IRF540NPBF and IXTP1R1N100D2, the SIR878DP-T1-GE3 delivers superior power density and efficiency in 100–500 kHz telecom/server DC/DC topologies due to its 14 mΩ RDS(on), 13.6 nC Qg, and thermally optimized PowerPAK® SO-8 package - making it the preferred choice where layout area, thermal management, and switching loss are critical.
Availability
SIR878DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom infrastructure, server power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SIR878DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The SiR878DP product line targets high-frequency, high-efficiency power conversion systems - specifically engineered for primary-side switching in 48 V telecom/server DC/DC converters where low RDS(on), fast switching, and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current rating for SIR878DP-T1-GE3 at 70 °C case temperature?
The SIR878DP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package under sustained high-power operation and must be validated against actual PCB copper area and airflow in the end application. The SIR878DP-T1-GE3 datasheet confirms this value with test condition notes referencing junction-to-case thermal resistance.
Does SIR878DP-T1-GE3 support 4.5 V gate drive for full enhancement?
Yes, the SIR878DP-T1-GE3 is fully characterized down to 4.5 V gate drive: RDS(on) = 0.019 Ω (max) at VGS = 4.5 V and ID = 10 A, confirming reliable enhancement with standard 5 V logic or buck-derived gate supplies. The SIR878DP-T1-GE3 gate threshold voltage range (1.2–2.8 V) provides sufficient margin to avoid partial turn-on during noise transients while ensuring full conduction at 4.5 V.
What is the body diode reverse recovery time (trr) of SIR878DP-T1-GE3, and how does it impact synchronous rectification?
The SIR878DP-T1-GE3 body diode exhibits trr = 45–90 ns at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. This fast recovery minimizes reverse recovery loss and voltage overshoot during hard-commutation in synchronous rectifier configurations. The SIR878DP-T1-GE3 Qrr of 50–100 nC further supports low-loss operation when used in complementary high-side/low-side pairs.
Is SIR878DP-T1-GE3 qualified for lead-free reflow per JEDEC J-STD-020?
Yes, the SIR878DP-T1-GE3 is qualified for lead-free reflow with peak temperature up to 260 °C, as documented in the Soldering Recommendations section. The PowerPAK® SO-8 package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements. The SIR878DP-T1-GE3 datasheet explicitly references www.vishay.com/doc?73257 for the full solder profile.
How does the thermal resistance RthJC of SIR878DP-T1-GE3 compare to standard SO-8 MOSFETs?
The SIR878DP-T1-GE3 achieves RthJC = 2.1 °C/W (typ.), significantly lower than conventional SO-8 MOSFETs (typically 3.5–6.0 °C/W), due to its leadless PowerPAK® construction with direct copper drain pads. This 40–65 % improvement enables higher power dissipation without external heatsinks. The SIR878DP-T1-GE3 thermal data is validated per JEDEC 51-14 standards and confirmed in the Thermal Resistance Ratings table.
SIR878DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 44.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR878DP-T1-GE3 FAQ
1.How can I place an order for SIR878DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR878DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR878DP-T1-GE3 reliable?
The price and inventory of SIR878DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR878DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR878DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR878DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR878DP-T1-GE3?
SIR878DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR878DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR878DP-T1-GE3?
For technical support, including SIR878DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR878DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR878DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR878DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR878DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR878DP-T1-GE3?
All SIR878DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR878DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR878DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR878DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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