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Vishay Siliconix SIR880ADP-T1-GE3
- Part No.:
- SIR880ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR880ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 80V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,720
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Product details
Overview
SIR880ADP-T1-GE3 from Vishay Siliconix is an N-channel 80 V TrenchFET® power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 6.3 mΩ at VGS = 10 V and 8.9 mΩ at VGS = 4.5 V. It serves as a primary-side switch or synchronous rectifier in isolated DC/DC converters.
For engineers reviewing the SIR880ADP-T1-GE3 datasheet, SIR880ADP-T1-GE3 pinout, SIR880ADP-T1-GE3 application, or SIR880ADP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 24 nC total gate charge (Qg), 1.5–3.0 V gate threshold voltage, and thermal resistance of 1.0–1.5 °C/W junction-to-case - critical for high-efficiency, space-constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss in hard-switched and synchronous rectification topologies. Its gate charge profile (Qg = 24 nC typ. at VGS = 4.5 V) and low Crss (98 pF) support efficient operation in high-frequency DC/DC converters up to 1 MHz.
The device features 100 % Rg and UIS tested reliability, with a body diode exhibiting trr = 46 ns (typ.) and Qrr = 46 nC (typ.) at TJ = 25 °C - enabling robust performance in freewheeling and reverse recovery–sensitive applications like full-bridge and phase-shifted topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - maximum blocking voltage for primary-side switching in 48 V input systems or 24 V industrial rails. |
| RDS(on) max | 6.3 mΩ at VGS = 10 V - enables <1 W conduction loss at 40 A, supporting high-current, low-voltage output stages. |
| Qg typ. | 24 nC at VGS = 4.5 V - reduces gate drive power and allows use with standard PWM controllers without external buffering. |
| ID (continuous) | 60 A at TC = 25 °C - supports high-power density designs when mounted on thermally enhanced PCBs. |
| RthJC | 1.0 °C/W typical - delivers DPAK-level thermal performance in SO-8 footprint, enabling >50 W dissipation with minimal heatsinking. |
| VGS(th) | 1.5–3.0 V - ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers in modern controller ICs. |
| trr / Qrr | 46 ns / 46 nC (typ.) - minimizes switching loss and EMI during body diode commutation in synchronous rectifiers. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, same footprint as standard SO-8; drain pad exposed on bottom for thermal conduction).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain pad provides low-inductance, high-current path and direct thermal interface to PCB copper. |
| G (pin 1 top view) | Gate (G) | Single gate terminal located adjacent to source - enables compact gate loop layout and minimizes Miller feedback. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) at 4.5 V gate drive, supporting efficient operation with 3.3 V microcontroller outputs. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| PowerPAK® SO-8 package | Delivers DPAK-equivalent thermal resistance (1.0 °C/W) in SO-8 footprint - no PCB redesign needed for upgrade from standard SO-8. |
| Low Crss (98 pF) | Reduces Miller-induced shoot-through risk and improves controllability in high-speed half-bridge configurations. |
| Body diode trr = 46 ns | Minimizes reverse recovery loss and associated voltage spikes in synchronous rectification and LLC resonant converters. |
Applications
| Primary-Side Switch | Isolated DC/DC Converter |
|---|---|
Use Scenario: High-efficiency flyback or forward converter operating from 36–75 V input in telecom power supplies. IC Role / Device Role: Primary-side power switch handling 60 A pulsed drain current and 80 V blocking. Use Value: Low RDS(on) (6.3 mΩ) and 24 nC Qg reduce conduction and switching losses, enabling >94 % efficiency at 500 kHz. |
Use Scenario: 48 V input, 12 V output isolated buck-derived converter in server VRMs. IC Role / Device Role: High-side switch in active clamp or phase-shifted full-bridge topology. Use Value: 1.0 °C/W RthJC allows sustained 40 A operation without external heatsink, reducing system size and cost. |
| Synchronous Rectifier | Full-Bridge Inverter |
Use Scenario: Secondary-side rectification in 12 V output LLC resonant converter for data center PSUs. IC Role / Device Role: Low-VDS synchronous rectifier replacing Schottky diodes to minimize forward drop. Use Value: Body diode trr = 46 ns and Qrr = 46 nC suppress voltage overshoot and EMI during zero-voltage switching transitions. |
Use Scenario: Motor drive inverter stage for industrial servo amplifiers requiring 80 V bus voltage. IC Role / Device Role: High-current, low-RDS(on) switching element in all four legs of full-bridge configuration. Use Value: Parallel source/drain terminals and low gate charge enable clean, low-loss commutation at 20 kHz PWM frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870ADP-T1-GE3 | RDS(on) = 7.0 mΩ @ 10 V; Qg = 21 nC; lower ID rating (50 A vs. 60 A) | Better gate charge efficiency but reduced current capability - suitable where peak current ≤ 50 A | Select for higher-frequency designs prioritizing Qg over absolute current headroom. |
| IRF7480TRPBF | Standard SO-8 package; RDS(on) = 7.5 mΩ @ 10 V; RthJC = 16 °C/W (vs. 1.0 °C/W) | Higher thermal resistance limits power handling - requires heatsink above ~10 W dissipation | Choose only if legacy SO-8 land pattern must be retained and thermal budget permits higher junction rise. |
Compared with SiR870ADP-T1-GE3, SIR880ADP-T1-GE3 delivers 10 A higher continuous current and 0.7 mΩ lower RDS(on), making it preferable for high-power-density 48 V systems; versus IRF7480TRPBF, its PowerPAK SO-8 package cuts junction-to-case thermal resistance by 94 %, enabling 5× higher power dissipation on identical PCB area.
Availability
SIR880ADP-T1-GE3 is available at Aetrix Electronics and suitable for isolated DC/DC converters, full-bridge inverters, and synchronous rectification circuits requiring stable component supply, high-reliability power switching, and thermal-performance consistency across production batches.
Supply support for SIR880ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIR880ADP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered for high-efficiency, high-current switching in space-constrained industrial, telecom, and computing power supplies.
FAQ
What is the maximum continuous drain current rating for SIR880ADP-T1-GE3 at 70 °C case temperature?
The SIR880ADP-T1-GE3 is rated for 60 A continuous drain current at TC = 70 °C, per Vishay's Absolute Maximum Ratings table. This reflects derating from the 60 A rating at TC = 25 °C due to thermal constraints, and is validated under steady-state conditions with proper PCB copper thermal management.
Does SIR880ADP-T1-GE3 support 4.5 V gate drive for full enhancement?
Yes, SIR880ADP-T1-GE3 is fully characterized at VGS = 4.5 V, with RDS(on) max = 8.9 mΩ and Qg typ = 24 nC. Its gate threshold voltage range (1.5–3.0 V) ensures strong turn-on with 4.5 V logic-level drivers, making it suitable for controllers with 3.3 V or 5 V output stages.
What is the thermal resistance from junction to ambient for SIR880ADP-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the SIR880ADP-T1-GE3 has RthJA = 18–23 °C/W (typical to maximum). This value assumes surface mounting per Vishay's recommended solder profile and accounts for convection and limited copper spreading - actual performance improves significantly with added drain-side copper area.
Can SIR880ADP-T1-GE3 replace a standard SO-8 MOSFET without PCB layout changes?
Yes, SIR880ADP-T1-GE3 uses the PowerPAK® SO-8 package with identical footprint and pinout to standard SO-8, allowing direct substitution. However, its leadless construction requires matching land patterns with extended drain copper - existing SO-8 pads will function but deliver suboptimal thermal performance.
What is the body diode reverse recovery time (trr) specification for SIR880ADP-T1-GE3?
The SIR880ADP-T1-GE3 body diode has trr = 46 ns (typical) and 90 ns (maximum) at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This fast recovery supports low-loss synchronous rectification in high-frequency resonant and hard-switched converters.
SIR880ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2289 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR880ADP-T1-GE3 FAQ
1.How can I place an order for SIR880ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR880ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR880ADP-T1-GE3 reliable?
The price and inventory of SIR880ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR880ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR880ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR880ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR880ADP-T1-GE3?
SIR880ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR880ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR880ADP-T1-GE3?
For technical support, including SIR880ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR880ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIR880ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR880ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR880ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR880ADP-T1-GE3?
All SIR880ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR880ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR880ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR880ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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