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Vishay Siliconix SIR882DP-T1-GE3
- Part No.:
- SIR882DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR882DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,451
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Product details
Overview
SIR882DP-T1-GE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 60 A continuous drain current at TC = 25 °C, RDS(on) = 8.7 mΩ at VGS = 10 V, and 18.3 nC total gate charge - optimized for high-efficiency primary-side switching in telecom/server 48 V DC/DC converters.
For engineers reviewing the SIR882DP-T1-GE3 datasheet, SIR882DP-T1-GE3 pinout, SIR882DP-T1-GE3 application, or SIR882DP-T1-GE3 equivalent, key selection criteria include its 100 V VDS, low RDS(on) across 4.5–10 V drive, robust 30 A single-pulse avalanche rating, and thermal performance matching DPAK via PowerPAK SO-8's exposed-drain thermal path.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: td(on) = 12–26 ns and tf = 8–18 ns depending on gate drive voltage (4.5 V, 7.5 V, or 10 V), enabling high-frequency operation in hard-switched topologies. Its body diode exhibits trr = 64–120 ns and Qrr = 80–160 nC, supporting synchronous rectification and ZVS-assisted designs.
The device operates over –55 °C to +150 °C junction temperature range and features a gate threshold voltage VGS(th) of 1.2–2.8 V with negative temperature coefficient, ensuring stable turn-on behavior under thermal stress. Its RthJC = 1.0–1.5 °C/W enables efficient heat transfer from die to PCB copper, critical for high-power density server power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V input DC/DC systems with ≥2× voltage margin against transients. |
| RDS(on) | 8.7 mΩ @ VGS = 10 V - enables <1 W conduction loss at 30 A, reducing thermal load in high-current rails. |
| ID (continuous) | 60 A @ TC = 25 °C - sustains full-load current in compact board space without forced air cooling. |
| Qg | 18.3 nC @ VGS = 4.5 V - allows efficient drive with standard gate drivers, minimizing driver power and layout complexity. |
| RthJC | 1.0 °C/W typical - delivers DPAK-level thermal performance in SO-8 footprint, enabling direct replacement in legacy layouts. |
| EAS | 45 mJ - withstands energy from inductive switching events in half-bridge configurations without failure. |
| VGS(th) | 1.2–2.8 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level controllers. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but featuring an exposed copper drain pad on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V drive; requires low-impedance path to minimize switching losses. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in low-side configurations. |
| 3 (D) | Drain | High-voltage output node; connects to input bus or transformer primary; thermally coupled to PCB copper. |
| 4 (D) | Drain | Parallel drain connection; increases current capacity and reduces package inductance in high-frequency switching. |
| 5 (D) | Drain | Third drain terminal; shares thermal and electrical load with pins 3 and 4 to lower RDS(on) and improve reliability. |
| 6 (D) | Drain | Fourth drain terminal; forms low-inductance, high-current path to PCB thermal plane for efficient heat extraction. |
| 7 (S) | Source | Secondary source connection; provides redundant return path and lowers source inductance in high-dI/dt applications. |
| 8 (S) | Source | Third source terminal; enhances current sharing and reduces voltage overshoot during turn-off transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 8.7 mΩ RDS(on) at 100 V rating - achieves higher current density than planar MOSFETs in same footprint. |
| PowerPAK® SO-8 package | Delivers 1.0 °C/W RthJC - matches DPAK thermal performance while maintaining SO-8 land pattern compatibility. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated industrial and telecom deployments. |
| Low Qgd/Qg ratio | 7.8 nC / 18.3 nC = 0.43 - improves hard-switching efficiency and reduces voltage spikes during commutation. |
| Body diode trr | 64–120 ns - enables use in synchronous rectifier or freewheeling roles without external Schottky supplementation. |
Applications
| Telecom Server 48 V DC/DC | Industrial Motor Drive Inverter Stage |
|---|---|
Use Scenario: Primary-side switch in isolated full-bridge or phase-shifted full-bridge converters powering 48 V intermediate bus in data center servers. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switching at 100–500 kHz with 100 V blocking capability and low conduction loss. Use Value: 8.7 mΩ RDS(on) reduces conduction loss by >35% vs. comparable SO-8 MOSFETs, improving system efficiency from 92% to 94.5% at full load. |
Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for factory automation actuators and HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching power stage element handling 30–60 A peak currents with tight dead-time control. Use Value: 12–26 ns turn-on delay and 8–18 ns fall time support <50 ns dead-time margins, minimizing shoot-through risk and EMI generation. |
| DC/DC Primary Side Switch | Industrial Power Supply Input Stage |
Use Scenario: Main switching transistor in non-isolated buck or buck-boost converters for programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating continuously at 85 °C ambient with no derating. Use Value: 150 °C max junction temperature and 1.0 °C/W RthJC allow sustained 60 A operation on 1 oz copper with minimal heatsinking. |
Use Scenario: Input-stage switch in DIN-rail mounted 24 V industrial power supplies feeding PLC backplanes and sensor networks. IC Role / Device Role / Timing Role: Robust 100 V primary switch handling line surges up to 150 V and repetitive avalanche energy of 45 mJ. Use Value: 30 A single-pulse avalanche current rating and 45 mJ EAS ensure survival during 100 V/10 ms surge events per IEC 61000-4-5 Level 3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | 100 V, 50 A, RDS(on) = 10.3 mΩ @ 10 V, Qg = 15.2 nC - lower gate charge but higher on-resistance. | Better suited for gate-drive-limited designs where switching loss dominates; less optimal for high-current conduction-limited cases. | Select when prioritizing faster switching over lowest conduction loss; verify thermal margin at 60 A load. |
| IRF8726PBF | 100 V, 60 A, RDS(on) = 9.0 mΩ @ 10 V, Qg = 22.5 nC - similar RDS(on) but 23% higher gate charge. | Higher driver power requirement and longer switching transitions increase EMI and reduce efficiency above 250 kHz. | Acceptable for lower-frequency (<200 kHz) industrial SMPS where gate drive capability exceeds 2 A peak. |
Compared with SiR872DP-T1-GE3 and IRF8726PBF, the SIR882DP-T1-GE3 offers the best balance of ultra-low RDS(on) and moderate gate charge - making it optimal for high-current, high-frequency telecom/server DC/DC where both conduction and switching losses must be minimized simultaneously.
Availability
SIR882DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial motor drives, and DC/DC primary-side switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIR882DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR882DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-density, high-efficiency power conversion in data center, telecom, and industrial infrastructure applications.
FAQ
What is the maximum continuous drain current rating for the SIR882DP-T1-GE3 at 70 °C case temperature?
The SIR882DP-T1-GE3 supports 55 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating from 60 A at 25 °C reflects thermal limits of the PowerPAK® SO-8 package under real-world board-conduction conditions. The device maintains full functionality and reliability within this limit when mounted on appropriate copper area per Vishay Application Note AN821.
Does the SIR882DP-T1-GE3 have a specified avalanche energy rating, and how is it validated?
Yes, the SIR882DP-T1-GE3 has a single-pulse avalanche energy rating of 45 mJ, measured under standardized test conditions (L = 0.1 mH, IAS = 30 A). This rating is guaranteed by design and verified through production qualification per JEDEC standards. It enables robust operation in inductive switching circuits where voltage transients exceed VDS rating, such as in hard-switched bridge topologies.
Can the SIR882DP-T1-GE3 be used with 4.5 V gate drive in logic-level applications?
Yes, the SIR882DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 11.5 mΩ (max) at ID = 15 A, and total gate charge Qg = 18.3 nC (typ). Its VGS(th) range of 1.2–2.8 V ensures reliable turn-on with 3.3 V or 4.5 V microcontroller outputs or gate drivers, making it suitable for logic-level control without level-shifting circuitry.
How does the thermal performance of the SIR882DP-T1-GE3 compare to standard SO-8 MOSFETs?
The SIR882DP-T1-GE3 achieves RthJC = 1.0 °C/W (typ), matching DPAK performance and offering ~15× better junction-to-case thermal resistance than standard SO-8 packages (~16 °C/W). This enables die temperatures only ~2 °C above board temperature at 2.7 W dissipation - versus ~43 °C rise for standard SO-8 - preserving RDS(on) stability and extending lifetime in thermally constrained layouts.
Is the SIR882DP-T1-GE3 pin-compatible with standard SO-8 footprints?
Yes, the SIR882DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical outline, pad layout, and pin numbering as standard SO-8. Pin 1 = Gate, Pins 2/7/8 = Source, Pins 3/4/5/6 = Drain. No PCB redesign is required for drop-in replacement, though maximizing thermal performance requires extending the drain pad per Vishay Application Note AN826.
SIR882DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1930 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR882DP-T1-GE3 FAQ
1.How can I place an order for SIR882DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR882DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR882DP-T1-GE3 reliable?
The price and inventory of SIR882DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR882DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR882DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR882DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR882DP-T1-GE3?
SIR882DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR882DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR882DP-T1-GE3?
For technical support, including SIR882DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR882DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR882DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR882DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR882DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR882DP-T1-GE3?
All SIR882DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR882DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR882DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR882DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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