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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR890DP-T1-GE3

Name: SIR890DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR890DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR890DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR890DP-T1-GE3.pdf

Description:: MOSFET N-CH 20V 50A PPAK SO-8

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Product details

Overview

SIR890DP-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 50 A continuous drain current at T_C = 25 °C, R_DS(on) = 2.9 mΩ at V_GS = 10 V, and Q_g = 20 nC (typ.) at V_GS = 4.5 V. It serves as a low-side switch in synchronous buck dc-to-dc converters for game machines and other high-efficiency power stages.

For engineers reviewing the SIR890DP-T1-GE3 datasheet, SIR890DP-T1-GE3 pinout, SIR890DP-T1-GE3 application, or SIR890DP-T1-GE3 equivalent, key selection criteria include its 20 V V_DS, ultra-low R_DS(on) at 4.5 V gate drive, 100 % UIS-tested ruggedness, thermal performance matching DPAK, and lead-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching with fast dynamic response. Its gate charge profile supports efficient 4.5 V logic-level drive, and the integrated body diode exhibits t_rr = 27–50 ns and Q_rr = 17–32 nC under specified conditions.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct thermal conduction to the PCB, achieving R_thJC = 2.0 °C/W (typ.) and R_thJA = 20 °C/W (typ., t ≤ 10 s), enabling high-power density without external heatsinking in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters.
R_DS(on)	2.9 mΩ @ V_GS = 10 V - Enables <150 mW conduction loss at 20 A, critical for high-efficiency low-side switching.
I_D (cont.)	50 A @ T_C = 25 °C - Package-limited current handling suitable for high-current synchronous buck phases.
Q_g	20 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and switching losses in 5 V/3.3 V control environments.
R_thJC	2.0 °C/W (typ.) - Thermal resistance enables >32 W power dissipation at ΔT = 64 °C, matching DPAK-level cooling.
UIS Rating	100 % tested - Confirmed avalanche energy E_AS = 80 mJ ensures robustness against inductive switching stress.
Body Diode t_rr	27 ns (typ.) - Fast reverse recovery minimizes shoot-through risk and commutation loss in synchronous rectification.

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with same footprint and pinout as standard SO-8, featuring exposed copper drain terminals on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain)	Drain (D)	Seven pins tied internally to drain; bottom-side exposed copper pad provides primary thermal path and current conduction path to PCB.
6 (Gate)	Gate (G)	Control terminal; low R_g = 0.15–1.4 Ω supports fast turn-on/turn-off with minimal ringing.
Source	Source (S)	Internal connection to pins 1–5 and 7–8 source metallization; forms return path for load current and gate drive reference.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 2.9 mΩ R_DS(on) at 10 V and 4.0 mΩ at 4.5 V - delivers high current density with logic-level gate drive compatibility.
100 % UIS tested	Guarantees minimum 80 mJ single-pulse avalanche energy - eliminates need for external snubbers in inductive switching circuits.
PowerPAK® SO-8 package	Matches SO-8 footprint while providing DPAK-equivalent R_thJC - allows drop-in replacement in existing layouts with improved thermal headroom.
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and environmental requirements for consumer electronics including game machines.
100 % R_g tested	Ensures gate resistance between 0.15 Ω and 1.4 Ω - guarantees consistent switching speed and driver stage loading across production lots.

Applications

Server VRM Power Stage	Gaming Console DC-DC Converter
Use Scenario: High-current, high-frequency buck converter supplying CPU/GPU core voltage in datacenter servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with 4.5 V gate drive from controller. Use Value: 2.9 mΩ R_DS(on) and 20 nC Q_g reduce conduction and switching losses, enabling >95 % efficiency at 50 A output.	Use Scenario: Point-of-load regulator powering GPU memory subsystem in next-gen gaming consoles. IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck converter with tight thermal constraints. Use Value: PowerPAK® SO-8's 2.0 °C/W R_thJC maintains junction temperature <125 °C under 32 W dissipation, avoiding derating.
Industrial Motor Drive Gate Driver Stage	Automotive ADAS Camera Power Module
Use Scenario: Auxiliary 5 V/3.3 V supply for isolated gate drivers in 24 V industrial inverters. IC Role / Device Role / Timing Role: Low-side switch in compact non-isolated buck regulator feeding isolated DC-DC bias supplies. Use Value: 100 % UIS rating withstands voltage spikes from nearby IGBT switching, eliminating failure in harsh EMI environments.	Use Scenario: Compact 12 V to 3.3 V power module for CMOS image sensors in automotive surround-view cameras. IC Role / Device Role / Timing Role: Low-side MOSFET in thermally constrained, space-limited buck converter operating at 2 MHz. Use Value: 27 ns body diode t_rr prevents cross-conduction during dead-time, ensuring clean regulation under dynamic load steps.

Server VRM Power Stage

Gaming Console DC-DC Converter

Use Scenario: High-current, high-frequency buck converter supplying CPU/GPU core voltage in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with 4.5 V gate drive from controller.

Use Value: 2.9 mΩ R_DS(on) and 20 nC Q_g reduce conduction and switching losses, enabling >95 % efficiency at 50 A output.

Use Scenario: Point-of-load regulator powering GPU memory subsystem in next-gen gaming consoles.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck converter with tight thermal constraints.

Use Value: PowerPAK® SO-8's 2.0 °C/W R_thJC maintains junction temperature <125 °C under 32 W dissipation, avoiding derating.

Industrial Motor Drive Gate Driver Stage

Automotive ADAS Camera Power Module

Use Scenario: Auxiliary 5 V/3.3 V supply for isolated gate drivers in 24 V industrial inverters.

IC Role / Device Role / Timing Role: Low-side switch in compact non-isolated buck regulator feeding isolated DC-DC bias supplies.

Use Value: 100 % UIS rating withstands voltage spikes from nearby IGBT switching, eliminating failure in harsh EMI environments.

Use Scenario: Compact 12 V to 3.3 V power module for CMOS image sensors in automotive surround-view cameras.

IC Role / Device Role / Timing Role: Low-side MOSFET in thermally constrained, space-limited buck converter operating at 2 MHz.

Use Value: 27 ns body diode t_rr prevents cross-conduction during dead-time, ensuring clean regulation under dynamic load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR870DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 4.5 V; Q_g = 18 nC; same PowerPAK® SO-8 package	Higher R_DS(on) increases conduction loss by ~14 % at 20 A; lower Q_g improves switching efficiency slightly	Select when marginal R_DS(on) increase is acceptable for reduced gate drive demand in low-duty-cycle applications.
IRLHS6342TRPBF	R_DS(on) = 3.1 mΩ @ 4.5 V; Q_g = 22 nC; PQFN 3.3 × 3.3 mm package; R_thJA = 45 °C/W (typ.)	Smaller footprint but higher thermal resistance limits power handling to ~15 W; not suitable for 50 A continuous operation	Select only for space-constrained, lower-current (<25 A) designs where board area is prioritized over thermal performance.

Compared with SIR890DP-T1-GE3, SiR870DP-T1-GE3 trades minor conduction loss for lower gate charge, while IRLHS6342TRPBF sacrifices thermal capability and current rating for miniaturization-neither is pin-compatible, but both serve overlapping low-voltage switching roles with distinct design trade-offs.

Availability

SIR890DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, gaming console power supplies, and industrial motor drive auxiliary supplies requiring stable component supply, long-term manufacturability, and halogen-free compliance.

Supply support for SIR890DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal innovation.

The SiR890DP product line targets high-current, low-voltage synchronous buck converters in computing, gaming, and industrial systems-designed specifically to deliver DPAK-level thermal performance in SO-8-compatible footprints.

FAQ

What is the maximum continuous drain current rating for SIR890DP-T1-GE3 at 70 °C case temperature?

The SIR890DP-T1-GE3 is rated for 50 A continuous drain current at T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating is package-limited and applies under steady-state thermal conditions with adequate PCB copper area for heat spreading. The device maintains this current capability due to its PowerPAK® SO-8 package's low R_thJC of 2.0 °C/W (typ.), enabling effective junction-to-case heat transfer even at elevated case temperatures.

Does SIR890DP-T1-GE3 support 4.5 V gate drive in high-frequency synchronous buck applications?

Yes, SIR890DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 4.0 mΩ (max.) and Q_g = 20–30 nC at that voltage. Its low threshold voltage (V_GS(th) = 1.0–2.6 V) and fast switching times (t_d(on) = 30–55 ns, t_f = 25–50 ns with R_g = 1 Ω) make it suitable for high-frequency (>500 kHz) synchronous buck converters using standard 5 V or 3.3 V PWM controllers. The 100 % R_g test ensures consistent gate drive behavior across units.

How does the PowerPAK® SO-8 package of SIR890DP-T1-GE3 improve thermal performance versus standard SO-8?

The PowerPAK® SO-8 package of SIR890DP-T1-GE3 achieves R_thJC = 2.0 °C/W (typ.), matching DPAK performance, versus ~16 °C/W for standard SO-8. This is accomplished via an exposed copper drain pad on the bottom side that conducts heat directly into the PCB, eliminating leadframe thermal bottlenecks. In practice, this reduces junction temperature rise by ~40 °C under identical 2.7 W dissipation, preserving R_DS(on) stability and enabling higher current operation without derating.

Is SIR890DP-T1-GE3 suitable for use as a synchronous rectifier in buck converters?

Yes, SIR890DP-T1-GE3 is explicitly designed for low-side synchronous rectification, as stated in its Applications section. Its fast body diode (t_rr = 27–50 ns, Q_rr = 17–32 nC) and low V_SD = 0.71–1.1 V at I_S = 3 A minimize reverse recovery losses and forward conduction loss during dead-time. Combined with low R_DS(on), it enables high-efficiency operation in synchronous buck topologies up to 1 MHz, particularly in game machine and server VRM applications.

What is the avalanche energy rating of SIR890DP-T1-GE3, and is it production-tested?

The SIR890DP-T1-GE3 has a single-pulse avalanche energy rating of E_AS = 80 mJ (typ.) at I_AS = 40 A and L = 0.1 mH, with 100 % UIS (unclamped inductive switching) testing performed on every unit. This ensures guaranteed ruggedness against inductive transients in motor drives and converter circuits, eliminating the need for external protection components and improving system reliability without additional validation overhead.

SIR890DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2747 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR890DP-T1-GE3 FAQ

1.How can I place an order for SIR890DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR890DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR890DP-T1-GE3 reliable?

The price and inventory of SIR890DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR890DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR890DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR890DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR890DP-T1-GE3?

SIR890DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR890DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR890DP-T1-GE3?

For technical support, including SIR890DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR890DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR890DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR890DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR890DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR890DP-T1-GE3?

All SIR890DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR890DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR890DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR890DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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