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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA00DP-T1-RE3

Name: SIRA00DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA00DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA00DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA00DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 100A PPAK SO-8

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Product details

Overview

SIRA00DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 1.00 mΩ at V_GS = 10 V and 1.35 mΩ at V_GS = 4.5 V, with 100 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in VRMs and high-power-density DC/DC converters.

For engineers reviewing the SIRA00DP-T1-RE3 datasheet, SIRA00DP-T1-RE3 pinout, SIRA00DP-T1-RE3 application, or SIRA00DP-T1-RE3 equivalent, this device is selected for low conduction loss, fast switching (Q_g = 66 nC typ. at 4.5 V), robust UIS rating (50 A single-pulse avalanche), and thermal performance matching DPAK (R_thJC = 0.9 °C/W typ.) while retaining SO-8 footprint compatibility.

Technical Context

This MOSFET employs a trench-gate silicon structure enabling ultra-low on-resistance and high current density. Its gate charge profile (Q_g = 66 nC at V_GS = 4.5 V, Q_gd = 8.6 nC) supports efficient operation in high-frequency synchronous buck stages. The body diode exhibits t_rr = 70 ns (typ.) and Q_rr = 70 nC (typ.) at I_F = 20 A, supporting fast reverse recovery in OR-ing and freewheeling roles.

The PowerPAK SO-8 package features exposed copper drain pads on the bottom side, providing direct thermal path to PCB copper. Its R_thJC = 0.9 °C/W (typ.) and R_thJA = 15 °C/W (typ., t ≤ 10 s) enable high power dissipation (P_D = 104 W at T_C = 25 °C) without external heatsinking in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems.
R_DS(on) max @ V_GS = 10 V	1.00 mΩ - Enables <1.0 W conduction loss at 100 A, critical for VRM efficiency.
R_DS(on) max @ V_GS = 4.5 V	1.35 mΩ - Ensures low-loss operation with 5 V gate drive in logic-level control circuits.
I_D continuous (T_C = 25 °C)	100 A - Supports high-current output rails in server CPU/GPU VRMs and telecom DC/DC.
Q_g typ. @ V_GS = 4.5 V	66 nC - Low gate charge enables efficient switching at ≥500 kHz with moderate gate driver strength.
R_thJC typical	0.9 °C/W - Thermal resistance from junction to case allows direct mounting to copper pour for high-power thermal management.
Body diode t_rr	70 ns (typ.) - Fast recovery minimizes shoot-through risk and switching losses in synchronous rectifier mode.

Pinout & Package

PowerPAK® SO-8 single-channel package: leadless, surface-mount, 5.15 mm × 6.15 mm footprint identical to standard SO-8, with exposed drain copper on bottom side for enhanced thermal conduction. Height: 1.04 mm nominal.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Eight-drain-terminal configuration maximizes copper area for thermal dissipation and low-inductance power return path.
G (Pin 1 top view)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 1.00 mΩ R_DS(on) in SO-8 footprint-equivalent to DPAK-level performance in smaller area.
100 % R_g and UIS tested	Guarantees gate resistance consistency (0.3–2.7 Ω) and ruggedness against unclamped inductive switching stress.
Exposed drain pad (bottom side)	Provides direct thermal interface to PCB copper, achieving R_thJC = 0.9 °C/W without solder voids or TIM dependency.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, suitable for industrial and telecom manufacturing.
SO-8 footprint compatibility	Enables drop-in replacement of legacy SO-8 MOSFETs without PCB redesign-same land pattern, same pick-and-place.

Applications

Server VRM High-Side Switch	Telecom DC/DC Synchronous Rectifier
Use Scenario: Primary-side switch in multiphase buck converter supplying 0.8–1.8 V @ >200 A to modern CPUs/GPUs. IC Role / Device Role / Timing Role: High-side power MOSFET operating at 300–1000 kHz with 10–12 V gate drive, handling peak currents up to 400 A (pulsed). Use Value: Ultra-low R_DS(on) (1.00 mΩ) reduces conduction loss by >40 % vs. 1.8 mΩ alternatives, directly improving full-load efficiency and reducing thermal load on VRM heatsink.	Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC module for 5G base station power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC, replacing Schottky diodes to eliminate forward voltage drop. Use Value: R_DS(on) = 1.35 mΩ at 4.5 V gate drive enables <0.13 V effective forward drop at 100 A, cutting rectifier loss by >65 % versus 0.5 V Schottky diodes.
OR-ing Controller Backplane	Industrial Motor Drive Half-Bridge
Use Scenario: Redundant 12 V power rail OR-ing in network switch backplanes with hot-swap capability. IC Role / Device Role / Timing Role: Low-side OR-ing FET controlled by ideal diode controller, conducting bidirectionally during fault isolation. Use Value: Fast body diode recovery (t_rr = 70 ns) prevents reverse current surge during switchover, eliminating bus voltage droop and ensuring seamless redundancy.	Use Scenario: High-current half-bridge leg in 24 V BLDC motor drive for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch in 20–100 kHz PWM inverter stage, commutating up to 80 A RMS phase current. Use Value: 100 % UIS tested rating (IAS = 50 A) withstands inductive kickback during short-circuit events, enhancing system reliability without external snubbers.

Server VRM High-Side Switch

Telecom DC/DC Synchronous Rectifier

Use Scenario: Primary-side switch in multiphase buck converter supplying 0.8–1.8 V @ >200 A to modern CPUs/GPUs.

IC Role / Device Role / Timing Role: High-side power MOSFET operating at 300–1000 kHz with 10–12 V gate drive, handling peak currents up to 400 A (pulsed).

Use Value: Ultra-low R_DS(on) (1.00 mΩ) reduces conduction loss by >40 % vs. 1.8 mΩ alternatives, directly improving full-load efficiency and reducing thermal load on VRM heatsink.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V DC/DC module for 5G base station power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC, replacing Schottky diodes to eliminate forward voltage drop.

Use Value: R_DS(on) = 1.35 mΩ at 4.5 V gate drive enables <0.13 V effective forward drop at 100 A, cutting rectifier loss by >65 % versus 0.5 V Schottky diodes.

OR-ing Controller Backplane

Industrial Motor Drive Half-Bridge

Use Scenario: Redundant 12 V power rail OR-ing in network switch backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Low-side OR-ing FET controlled by ideal diode controller, conducting bidirectionally during fault isolation.

Use Value: Fast body diode recovery (t_rr = 70 ns) prevents reverse current surge during switchover, eliminating bus voltage droop and ensuring seamless redundancy.

Use Scenario: High-current half-bridge leg in 24 V BLDC motor drive for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in 20–100 kHz PWM inverter stage, commutating up to 80 A RMS phase current.

Use Value: 100 % UIS tested rating (IAS = 50 A) withstands inductive kickback during short-circuit events, enhancing system reliability without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 58 nC @ 4.5 V; same PowerPAK SO-8 package.	Slightly higher conduction loss but lower gate charge improves light-load efficiency in variable-frequency control.	Select when prioritizing gate drive energy savings over absolute minimum R_DS(on) in medium-current (<70 A) designs.
IRL3803PBF	R_DS(on) = 3.0 mΩ @ 10 V; TO-220 package; no exposed drain pad; R_thJC = 1.5 °C/W.	Larger footprint, higher thermal resistance, and higher on-resistance limit use in high-density or high-current applications.	Consider only for legacy through-hole designs or where SO-8 reflow is unavailable; not recommended for new VRM/DC/DC layouts.

Compared with SiR626DP-T1-RE3, SIRA00DP-T1-RE3 offers 20 % lower R_DS(on) for reduced conduction loss in high-current phases; compared with IRL3803PBF, it delivers 3× lower on-resistance and 40 % better thermal resistance in half the footprint-making it optimal for space-constrained, high-efficiency power stages.

Availability

SIRA00DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIRA00DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability for industrial, computing, and telecom markets.

The SIRA00DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency power conversion where ultra-low R_DS(on), fast switching, and superior thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIRA00DP-T1-RE3 at 70 °C case temperature?

The SIRA00DP-T1-RE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects its robust thermal design and PowerPAK SO-8 package's ability to sustain high current under elevated thermal conditions without derating-critical for compact VRM layouts where case temperature rises above ambient.

Does SIRA00DP-T1-RE3 have a qualified 100 % UIS test, and what is the rated single-pulse avalanche current?

Yes, SIRA00DP-T1-RE3 undergoes 100 % unclamped inductive switching (UIS) testing per datasheet. Its rated single-pulse avalanche current is 50 A (I_AS) with L = 0.1 mH, confirming ruggedness against transient inductive energy in motor drive and DC/DC converter fault conditions without requiring external clamping components.

Can SIRA00DP-T1-RE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SIRA00DP-T1-RE3 uses the exact same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8 packages. Its PowerPAK SO-8 construction allows drop-in replacement without layout changes-though optimal thermal performance requires matching the recommended drain pad area per Application Note AN821 and AN826.

What is the typical gate-to-source threshold voltage (V_GS(th)) range for SIRA00DP-T1-RE3, and how does it vary with temperature?

The SIRA00DP-T1-RE3 has a V_GS(th) range of 1.1 V to 2.2 V at T_J = 25 °C, with a negative temperature coefficient of −5.8 mV/°C. This ensures stable turn-on behavior across −55 °C to +150 °C junction temperatures, supporting reliable operation in automotive and industrial environments where gate drive margin must be maintained over wide thermal ranges.

How does the body diode performance of SIRA00DP-T1-RE3 compare to standard Schottky rectifiers in synchronous rectification?

The SIRA00DP-T1-RE3 body diode delivers V_SD = 0.7–1.1 V at I_S = 10 A and t_rr = 70 ns (typ.), outperforming most 45 V Schottky diodes (V_F ≈ 0.45–0.55 V, t_rr > 100 ns). Its lower forward drop at high current and faster recovery reduce both conduction and switching losses in high-frequency synchronous rectifiers-especially above 30 A load current.

SIRA00DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 11700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA00DP-T1-RE3 FAQ

1.How can I place an order for SIRA00DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA00DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA00DP-T1-RE3 reliable?

The price and inventory of SIRA00DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA00DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA00DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA00DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA00DP-T1-RE3?

SIRA00DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA00DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA00DP-T1-RE3?

For technical support, including SIRA00DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA00DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA00DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA00DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA00DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA00DP-T1-RE3?

All SIRA00DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA00DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA00DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA00DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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