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Vishay Siliconix SIRA02DP-T1-GE3
- Part No.:
- SIRA02DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA02DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,498
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Product details
Overview
SIRA02DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV Power MOSFET in PowerPAK® SO-8 package, delivering 50 A continuous drain current at TC = 25 °C, RDS(on) of 2.0 mΩ at VGS = 10 V and 2.7 mΩ at VGS = 4.5 V, with 34.3 nC total gate charge - optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.
For engineers reviewing the SIRA02DP-T1-GE3 datasheet, SIRA02DP-T1-GE3 pinout, SIRA02DP-T1-GE3 application, or SIRA02DP-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, junction-to-case thermal resistance of 1.4 °C/W, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance with enhanced switching efficiency. Its gate charge profile (Qg = 34.3 nC at VGS = 4.5 V) and Crss/Ciss ratio of 0.023–0.046 support fast, low-loss switching in high-frequency synchronous buck stages.
The device integrates a robust body diode with trr = 51–100 ns and Qrr = 46–90 nC, enabling reliable reverse recovery in hard-switched topologies. Thermal design is simplified by the PowerPAK SO-8's exposed drain pad, delivering RthJC = 1.4 °C/W and enabling operation up to TJ = 150 °C under sustained 50 A conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 30 V - supports input rails up to 24 V nominal with margin for transient spikes in point-of-load converters. |
| RDS(on) (Max) | 2.0 mΩ at VGS = 10 V - enables <1 W conduction loss at 50 A, critical for high-current VRM output stages. |
| RDS(on) (Max) | 2.7 mΩ at VGS = 4.5 V - ensures stable low-loss operation with common 5 V gate drivers in multiphase controllers. |
| ID (Cont, TC = 25 °C) | 50 A - rated for high-density power delivery without external heatsinking when mounted on ≥1"×1" FR4. |
| Qg (Typ) | 34.3 nC at VGS = 4.5 V - balances switching speed and driver loss in 300–1000 kHz DC/DC designs. |
| RthJC (Max) | 1.75 °C/W - allows direct thermal coupling to PCB copper, achieving die-to-ambient thermal resistance as low as 20 °C/W with proper layout. |
| Body Diode trr | 51–100 ns - minimizes reverse recovery losses during dead-time in synchronous rectifiers. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, featuring exposed drain terminals on the bottom for low-inductance, high-current paths and enhanced thermal conduction to the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Bottom Drain Pads) | Drain (D) | Eight parallel exposed copper drain terminals provide low-resistance, low-inductance connection to PCB power plane - essential for minimizing voltage overshoot and conduction loss. |
| 1 (Top Side) | Gate (G) | Single gate terminal with 0.3–2.1 Ω gate resistance - compatible with standard MOSFET drivers and supports clean turn-on/turn-off without excessive ringing. |
| 8 (Top Side) | Source (S) | Source terminal tied to internal source metallization - forms return path for load current and reference for gate drive; requires low-impedance connection to ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables 2.0 mΩ RDS(on) at 10 V and 2.7 mΩ at 4.5 V - reduces conduction loss by >30 % vs. prior-gen SO-8 MOSFETs in 5–12 V input VRMs. |
| 100 % Rg and UIS tested | Guarantees gate robustness against overvoltage and avalanche energy handling up to 45 mJ - eliminates need for external snubbers in high-dV/dt environments. |
| PowerPAK SO-8 package | Delivers RthJC = 1.4 °C/W - matches DPAK thermal performance while fitting SO-8 land patterns, enabling drop-in upgrade without PCB redesign. |
| Lead (Pb)-free and Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for automotive and industrial applications requiring strict material compliance. |
| Body diode Qrr = 46–90 nC | Reduces reverse recovery charge by ~40 % vs. comparable SO-8 devices - lowers EMI and improves light-load efficiency in synchronous rectification. |
Applications
| Server VRM Output Stage | High-Density Telecom DC/DC |
|---|---|
Use Scenario: Final-stage power conversion in dual-phase 48 V–12 V intermediate bus converters supplying CPU/GPU core voltage. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with 4.5 V gate drive from multiphase controller. Use Value: 2.7 mΩ RDS(on) at 4.5 V reduces conduction loss by 1.2 W per phase vs. legacy 3.8 mΩ devices, enabling 95.2 % peak efficiency at 40 A. | Use Scenario: 48 V input, 3.3 V/50 A output DC/DC module in compact base station power supply. IC Role / Device Role / Timing Role: High-current primary-side switch in interleaved buck converter with forced-air cooling. Use Value: 50 A continuous rating and 1.4 °C/W RthJC allow full-rated current with ≤35 °C temperature rise on 2-layer 2 oz Cu board - eliminates need for thermal vias or heatsinks. |
| Industrial PLC Power Module | Laptop Embedded DC/DC |
Use Scenario: 24 V input, 5 V/30 A auxiliary rail in programmable logic controller with extended ambient temperature range. IC Role / Device Role / Timing Role: Main power switch in synchronous buck regulator operating from -40 °C to +85 °C ambient. Use Value: RDS(on) drift of <15 % from -55 °C to 150 °C ensures stable regulation across full industrial temperature range without derating. | Use Scenario: Core voltage regulator (VDDQ) for DDR5 memory subsystem in ultrabook platform. IC Role / Device Role / Timing Role: Compact, low-profile high-side switch in 1 MHz buck converter with space-constrained layout. Use Value: 0.9 mm max height and SO-8 footprint enable integration into 1.2 mm board stack-up - maintains thermal performance while meeting mechanical envelope limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 1.4 mΩ @ 10 V, Qg = 52 nC - lower on-resistance but higher gate charge. | Better for ultra-high-efficiency 12 V input VRMs where gate drive capability supports higher Qg. | Prefer SiR872DP-T1-GE3 when optimizing for <10 mΩ RDS(on) at cost of increased driver loss and layout complexity. |
| IRF7478PBF | RDS(on) = 3.1 mΩ @ 10 V, RthJC = 2.5 °C/W - higher on-resistance and worse thermal resistance than SIRA02DP-T1-GE3. | Suitable for lower-current (<30 A), lower-frequency (<300 kHz) applications where thermal margin is less constrained. | Select IRF7478PBF only if legacy SO-8 compatibility is required and 25 % higher conduction loss is acceptable. |
Compared with SiR872DP-T1-GE3, SIRA02DP-T1-GE3 offers lower Qg for faster switching at moderate currents, while versus IRF7478PBF it delivers 30 % lower RDS(on) and 44 % better thermal resistance - making it optimal for high-current, high-frequency synchronous rectification where both conduction and thermal performance are critical.
Availability
SIRA02DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, industrial PLC power supplies, and laptop embedded DC/DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIRA02DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIRA02DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV Power MOSFET product line, engineered specifically for high-current, high-frequency synchronous rectification in next-generation VRMs, POL converters, and compact DC/DC modules demanding ultra-low RDS(on) and superior thermal behavior.
FAQ
What is the maximum continuous drain current rating for SIRA02DP-T1-GE3 at 70 °C case temperature?
The SIRA02DP-T1-GE3 supports 50 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and remains unchanged from the 25 °C rating due to the PowerPAK SO-8's efficient thermal path - unlike conventional SO-8 devices that derate significantly above 25 °C. The 50 A rating assumes adequate PCB copper area and airflow per Vishay Application Note AN821.
Does SIRA02DP-T1-GE3 support 4.5 V gate drive in synchronous rectifier applications?
Yes, SIRA02DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed at 2.7 mΩ max at VGS = 4.5 V and ID = 10 A, and total gate charge is 34.3 nC typical under those conditions. This makes SIRA02DP-T1-GE3 ideal for use with standard 5 V PWM controllers and integrated power stages where gate voltage is clamped or regulated near 4.5 V.
What is the thermal resistance from junction to case (RthJC) for SIRA02DP-T1-GE3, and how does it impact PCB layout?
SIRA02DP-T1-GE3 has a maximum RthJC of 1.75 °C/W and typical value of 1.4 °C/W. This low value is achieved via the exposed drain pad on the bottom of the PowerPAK SO-8 package, which must be soldered directly to a large copper pour on the PCB. Layout best practices include using ≥0.3 in² spreading copper and ≥6 thermal vias under the drain pad to maintain junction temperature below 150 °C at full 50 A load.
Is SIRA02DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIRA02DP-T1-GE3 uses the PowerPAK SO-8 package, which shares identical 5.15 mm × 6.15 mm footprint and top-side pinout (G-S-D-D-D-D-D-D) with standard SO-8. However, the bottom-side drain terminals are exposed and require matching copper land patterns - existing SO-8 layouts can be reused, but optimal thermal performance demands updated drain pad geometry per Vishay Application Note AN826.
What body diode specifications does SIRA02DP-T1-GE3 provide for reverse recovery in synchronous rectification?
SIRA02DP-T1-GE3 specifies body diode reverse recovery time (trr) of 51–100 ns and reverse recovery charge (Qrr) of 46–90 nC at IF = 10 A, dI/dt = 100 A/µs, and TJ = 25 °C. These values are measured under standardized conditions and confirm suitability for high-frequency synchronous rectification where low Qrr minimizes switching loss and EMI generation during dead-time transitions.
SIRA02DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 117 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6150 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 71.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA02DP-T1-GE3 FAQ
1.How can I place an order for SIRA02DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA02DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA02DP-T1-GE3 reliable?
The price and inventory of SIRA02DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA02DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA02DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA02DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA02DP-T1-GE3?
SIRA02DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA02DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA02DP-T1-GE3?
For technical support, including SIRA02DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA02DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA02DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA02DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA02DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA02DP-T1-GE3?
All SIRA02DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA02DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA02DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA02DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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