My Inquiry
My Account
Vishay Siliconix SIRA04DP-T1-GE3
- Part No.:
- SIRA04DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA04DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,887
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIRA04DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 2.15 mΩ at VGS = 10 V and 3.10 mΩ at VGS = 4.5 V, used as a high-efficiency synchronous rectifier in VRMs and high-density DC/DC converters.
For engineers reviewing the SIRA04DP-T1-GE3 datasheet, SIRA04DP-T1-GE3 pinout, SIRA04DP-T1-GE3 application, or SIRA04DP-T1-GE3 equivalent, this page delivers verified electrical specs, thermal performance data, validated alternative parts, and real-world design context for power stage optimization in server, telecom, and embedded power systems.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low RDS(on) while maintaining robust UIS and 100 % Rg testing. Its gate charge profile-Qg = 22.5 nC (typ.) at VGS = 4.5 V-enables fast switching with low drive loss in high-frequency synchronous buck stages.
The PowerPAK SO-8 package provides a junction-to-case thermal resistance of 1.6 °C/W (typ.), matching DPAK-level thermal performance while retaining SO-8 footprint compatibility. The exposed drain pad on the bottom side enables direct thermal coupling to PCB copper, critical for managing 62.5 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Drain-Source Voltage) | 30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages. |
| RDS(on) max. at VGS = 10 V | 2.15 mΩ - Enables <1.5 W conduction loss at 40 A, supporting high-current VRM phases. |
| RDS(on) max. at VGS = 4.5 V | 3.10 mΩ - Ensures stable operation under low-voltage gate drive in point-of-load regulators. |
| Qg typ. at VGS = 4.5 V | 22.5 nC - Low gate charge reduces driver power and switching transition time in >500 kHz designs. |
| ID continuous (TC = 25 °C) | 40 A - Supports single-phase output currents up to 40 A without paralleling devices. |
| RthJC (Junction-to-Case) | 1.6 °C/W (typ.) - Matches DPAK thermal capability, enabling direct heatsink mounting via PCB copper. |
| Body diode VSD at IS = 5 A | 0.73 V (typ.) - Low forward drop minimizes reverse recovery losses during dead-time conduction. |
Pinout & Package
PowerPAK® SO-8 (leadless, surface-mount) package with 6.15 mm × 5.15 mm footprint, 1.04 mm nominal height, and exposed drain pad on bottom side for enhanced thermal transfer. Compatible with standard SO-8 land patterns but optimized with extended drain copper area per AN821.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Eight-drain configuration connects to large exposed bottom-side copper pad for minimal RthJC and high-current handling. |
| Gate (G) | Control terminal | Single gate pin (Pin 1 not used; Pin G = Pin 1 per top-view diagram) accepts standard 4.5–10 V logic-level drive. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 2.15 mΩ RDS(on) at 10 V in SO-8 footprint-enabling higher power density than prior-generation MOSFETs. |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to 20 mJ per pulse. |
| PowerPAK SO-8 package | Provides DPAK-equivalent thermal resistance (1.6 °C/W) in SO-8 outline-eliminating need for layout changes when upgrading from SO-8. |
| Low Qgd / Qg ratio | Crss/Ciss = 0.022–0.044 minimizes Miller effect, improving hard-switching stability in synchronous rectifiers. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard (doc#99912). |
Applications
| Server VRM Phase Legs | Telecom DC/DC Converters |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 40 A per phase in 1U rack servers. IC Role / Device Role: Low-side synchronous rectifier in interleaved buck topology, operating at 500–1000 kHz switching frequency. Use Value: 2.15 mΩ RDS(on) limits conduction loss to ≤1.36 W at 40 A, reducing thermal load and enabling compact heatsink design. |
Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power modules with strict efficiency targets (>95 %). IC Role / Device Role: Primary-side high-side switch and secondary-side synchronous rectifier in active-clamp forward or LLC resonant topology. Use Value: 3.10 mΩ RDS(on) at 4.5 V gate drive ensures reliable turn-on under partial-load conditions with controller ICs delivering 4.5 V gate output. |
| Embedded Point-of-Load Regulators | Industrial Motor Drive Gate Drivers |
Use Scenario: Compact 5 V or 3.3 V POL regulator on FPGA or ASIC carrier boards where board space and thermal headroom are constrained. IC Role / Device Role: Integrated power stage FET in monolithic or discrete buck regulator, replacing dual-MOSFET modules. Use Value: PowerPAK SO-8 footprint allows direct replacement of legacy SO-8 MOSFETs while delivering 30 % lower RDS(on), improving full-load efficiency by ~0.8 %. |
Use Scenario: Half-bridge high-side/low-side pair in 24 V BLDC motor control for factory automation, requiring fast switching and robust body diode recovery. IC Role / Device Role: Low-side switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: trr = 36 ns (typ.) and Qrr = 24 nC minimize reverse recovery losses and EMI generation during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 1.75 mΩ @ 10 V; higher Qg = 34 nC; same PowerPAK SO-8 package. | Better conduction loss but slower switching; suited for lower-frequency, higher-current VRMs. | Select when minimizing I²R loss dominates over switching loss-e.g., <300 kHz operation with >50 A phase current. |
| IRLHS6342TRPBF | RDS(on) = 3.2 mΩ @ 4.5 V; Qg = 17.5 nC; SO-8 package (not PowerPAK); RthJA = 50 °C/W (vs. 25 °C/W for SIRA04DP). | Lower gate charge but significantly worse thermal performance and higher RDS(on) at 4.5 V. | Acceptable only in low-power, low-duty-cycle applications where board-level thermal management is limited. |
Compared with SIRA04DP-T1-GE3, SiR872DP-T1-GE3 offers lower conduction loss at the cost of higher switching loss, while IRLHS6342TRPBF trades thermal capability and 4.5 V drive margin for reduced gate drive power-making SIRA04DP-T1-GE3 the balanced choice for high-frequency, high-current synchronous rectification.
Availability
SIRA04DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and embedded point-of-load regulators requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIRA04DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIRA04DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-current, high-frequency synchronous rectification in next-generation power supplies where thermal density and gate drive compatibility are critical.
FAQ
What is the maximum continuous drain current rating for SIRA04DP-T1-GE3 at 70 °C case temperature?
The SIRA04DP-T1-GE3 supports 40 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited current handling under steady-state thermal conditions and assumes adequate PCB copper area for heat spreading per Vishay Application Note AN821.
Does SIRA04DP-T1-GE3 support 4.5 V gate drive in synchronous rectifier applications?
Yes, SIRA04DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed ≤3.10 mΩ at VGS = 4.5 V and ID = 10 A, and its gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.2 V, ensuring robust turn-on with standard logic-level controllers used in modern VRMs and POL regulators.
What is the thermal resistance from junction to ambient for SIRA04DP-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the maximum junction-to-ambient thermal resistance (RthJA) for SIRA04DP-T1-GE3 is 25 °C/W (per datasheet note b). This value assumes standard mounting per Vishay's recommended land pattern in Application Note AN826 and accounts for natural convection cooling without forced airflow or heatsinks.
Is SIRA04DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIRA04DP-T1-GE3 uses the PowerPAK SO-8 package, which maintains identical pin count, pin pitch (1.27 mm), and outline dimensions (6.15 mm × 5.15 mm) as the standard SO-8. However, it is leadless with an exposed drain pad on the bottom-requiring compatible solder stencil and reflow profile per doc#73257.
What is the body diode reverse recovery charge (Qrr) specification for SIRA04DP-T1-GE3?
The body diode reverse recovery charge (Qrr) for SIRA04DP-T1-GE3 is 24 nC (typ.) and 48 nC (max.) at IF = 10 A, di/dt = 100 A/μs, and TJ = 25 °C. This low Qrr supports clean freewheeling in synchronous rectifier topologies and reduces switching loss and EMI during dead-time transitions.
SIRA04DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.15mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3595 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA04DP-T1-GE3 FAQ
1.How can I place an order for SIRA04DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA04DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA04DP-T1-GE3 reliable?
The price and inventory of SIRA04DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA04DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA04DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA04DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA04DP-T1-GE3?
SIRA04DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA04DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA04DP-T1-GE3?
For technical support, including SIRA04DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA04DP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA04DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA04DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA04DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA04DP-T1-GE3?
All SIRA04DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA04DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA04DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA04DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIRA04DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
