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Vishay Siliconix SIRA06DDP-T1-UE3
- Part No.:
- SIRA06DDP-T1-UE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA06DDP-T1-UE3.pdf
- Description:
- N-CHANNEL 30 V (D-S) 150C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,672
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Product details
Overview
SIRA06DDP-T1-UE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 2.2 mΩ at VGS = 10 V and 3.5 mΩ at VGS = 4.5 V, with 125 A continuous drain current (TJ = 150 °C) and 14.4 nC total gate charge - optimized for high-efficiency synchronous rectification in VRMs and high-density DC/DC converters.
For engineers reviewing the SIRA06DDP-T1-UE3 datasheet, SIRA06DDP-T1-UE3 pinout, SIRA06DDP-T1-UE3 application, or SIRA06DDP-T1-UE3 equivalent, this page provides verified package mapping, thermal resistance data (RthJC = 1.7 °C/W), body diode recovery metrics (trr = 31 ns, Qrr = 21 nC), and validated alternatives for low-RDS(on) power switching in server, telecom, and embedded power systems.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve ultra-low on-resistance and fast switching dynamics. Its 14.4 nC Qg at 4.5 V enables efficient drive with standard PWM controllers, while Crss/Ciss ratio of 0.015–0.030 minimizes Miller-induced turn-off delay in hard-switched topologies.
The device integrates a robust body diode with VSD = 0.77 V (typ.) at IS = 10 A and trr = 31 ns (typ.), supporting zero-voltage switching (ZVS) transitions and reducing reverse recovery losses in synchronous buck stages. Thermal design is enabled by RthJC = 1.7 °C/W and exposed-drain thermal pad construction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in point-of-load converters. |
| RDS(on) @ 10 V | 2.2 mΩ max - Enables <1 W conduction loss at 100 A, critical for >95 % efficiency in VRMs. |
| RDS(on) @ 4.5 V | 3.5 mΩ max - Ensures stable operation with 5 V gate drivers and logic-level control signals. |
| Qg @ 4.5 V | 14.4 nC typ. - Low gate charge reduces driver power and switching transition time in high-frequency designs. |
| ID (TJ = 150 °C) | 125 A - High current rating supports single-device solutions in 100+ A output stages without paralleling. |
| trr / Qrr | 31 ns / 21 nC - Fast, low-charge body diode minimizes shoot-through risk and EMI in synchronous rectification. |
| RthJC | 1.7 °C/W typ. - Low junction-to-case resistance allows direct heatsinking via exposed drain pad for thermal management. |
Pinout & Package
PowerPAK® SO-8 single-package with exposed drain thermal pad on bottom side; leadless construction requires reflow-only assembly per JEDEC J-STD-020. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large exposed copper pad for low-inductance, high-current path and thermal conduction. |
| G (Pin 1 top view) | Gate (G) | Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Enables 2.2 mΩ RDS(on) at 30 V while maintaining rugged UIS performance (EAS = 42 mJ). |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (0.18–1.8 Ω) and avalanche reliability for unclamped inductive switching events. |
| Exposed drain thermal pad | Provides direct thermal path to PCB copper, enabling 59 W power dissipation at TC = 25 °C. |
| Low Crss/Ciss ratio | 0.015–0.030 ratio improves controllability during Miller plateau and reduces dv/dt-induced false turn-on. |
| Body diode with trr = 31 ns | Supports high-frequency synchronous rectification without external Schottky diode in buck converters up to 1 MHz. |
Applications
| Server VRM Output Stage | Telecom DC/DC Converter |
|---|---|
Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ 100–200 A). IC Role / Device Role / Timing Role: Main power switch handling high peak currents with minimal conduction and switching loss. Use Value: 2.2 mΩ RDS(on) and 14.4 nC Qg enable >95 % efficiency at 500 kHz switching frequency and reduce thermal footprint vs. legacy 3.5 mΩ devices. |
Use Scenario: Synchronous rectifier in isolated forward or LLC resonant converter for 48 V to 12 V intermediate bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop. Use Value: 0.77 V body diode VSD and 31 ns trr minimize reverse recovery loss and allow tight dead-time control without shoot-through. |
| GPU Power Delivery | Industrial Embedded DC/DC |
Use Scenario: Phase-leg switch in compact GPU VRM module requiring high current density and low thermal resistance. IC Role / Device Role / Timing Role: High-current switching element with integrated thermal pad for direct PCB heatsinking. Use Value: RthJC = 1.7 °C/W and 125 A rating allow single-device implementation per phase, reducing component count and layout area. |
Use Scenario: Primary switch in 24 V input, 3.3/5/12 V output industrial DC/DC module with extended temperature range (-40 to +125 °C). IC Role / Device Role / Timing Role: Robust power switch rated for -55 to +150 °C operating range and 100 % UIS tested. Use Value: 100 % UIS testing and wide TJ range ensure reliability under load dump, hot-swap, and transient overcurrent conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 2.7 mΩ @ 4.5 V; Qg = 15.5 nC; PowerPAK 1212-8 package (smaller footprint, higher RthJA). | Lower current rating (80 A) and higher RDS(on) limit use to sub-60 A loads; better suited for space-constrained but thermally relaxed layouts. | Select when board area is constrained and thermal margin permits higher RDS(on); not recommended for >100 A VRMs. |
| DMTH3007LPSQ-13 | RDS(on) = 2.3 mΩ @ 10 V; Qg = 22 nC; SO-8 package with standard leaded terminations. | Higher Qg increases driver loss and slows switching; leaded package allows manual rework but has higher inductance and lower thermal performance. | Choose only if rework capability is mandatory and switching frequency ≤ 300 kHz; avoid in high-density, high-frequency VRMs. |
Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, SIRA06DDP-T1-UE3 delivers the lowest combined RDS(on)/Qg figure-of-merit (3.5 mΩ·nC) and best thermal resistance, making it optimal for high-current, high-efficiency, high-frequency power stages where thermal and electrical performance dominate.
Availability
SIRA06DDP-T1-UE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for SIRA06DDP-T1-UE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management, signal conditioning, and sensing applications.
The SIRA06DDP-T1-UE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-current synchronous rectification and primary-side switching in advanced point-of-load and intermediate bus converters.
FAQ
What is the maximum continuous drain current rating for SIRA06DDP-T1-UE3 at 70 °C case temperature?
The SIRA06DDP-T1-UE3 supports 100 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating from the 125 A value at TC = 25 °C due to thermal constraints, and is validated under steady-state conditions with proper PCB copper heatsinking.
Does SIRA06DDP-T1-UE3 have a fully characterized body diode for synchronous rectification?
Yes, the SIRA06DDP-T1-UE3 includes a fully characterized body diode with VSD = 0.77 V (typ.) at IS = 10 A, trr = 31 ns (typ.), and Qrr = 21 nC (typ.). These parameters are measured and guaranteed across temperature, enabling reliable synchronous rectification without external diodes in buck and flyback topologies.
What is the gate threshold voltage range for SIRA06DDP-T1-UE3, and how does it affect 4.5 V drive compatibility?
The gate threshold voltage VGS(th) for SIRA06DDP-T1-UE3 is specified from 1.1 V to 2.2 V at ID = 250 μA. This low threshold ensures full enhancement with 4.5 V gate drive, and the device achieves 3.5 mΩ RDS(on) max at that voltage - confirming robust logic-level operation in controller-driven synchronous circuits.
Is SIRA06DDP-T1-UE3 suitable for avalanche-rated applications, and what is its single-pulse energy rating?
Yes, SIRA06DDP-T1-UE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy EAS = 42 mJ at IAS = 29 A and L = 0.1 mH. This makes it suitable for applications subject to inductive transients, such as motor drives and relay snubbing, where controlled avalanche operation is required.
What is the thermal resistance from junction to case (RthJC) for SIRA06DDP-T1-UE3, and how is it measured?
The typical junction-to-case thermal resistance RthJC for SIRA06DDP-T1-UE3 is 1.7 °C/W, with a maximum of 2.2 °C/W. It is measured from the silicon die junction to the exposed drain pad surface under steady-state conditions, per JEDEC standards, and forms the basis for calculating allowable power dissipation when mounted on a heatsink or thermal plane.
SIRA06DDP-T1-UE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Ta), 125A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2330 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.6W (Ta), 59W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA06DDP-T1-UE3 FAQ
1.How can I place an order for SIRA06DDP-T1-UE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA06DDP-T1-UE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA06DDP-T1-UE3 reliable?
The price and inventory of SIRA06DDP-T1-UE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA06DDP-T1-UE3 is usually 5 days.
3.What payment methods are accepted for SIRA06DDP-T1-UE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA06DDP-T1-UE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA06DDP-T1-UE3?
SIRA06DDP-T1-UE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA06DDP-T1-UE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA06DDP-T1-UE3?
For technical support, including SIRA06DDP-T1-UE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA06DDP-T1-UE3 requirements.
6.How does Aetrix verify that SIRA06DDP-T1-UE3 is sourced from the original manufacturer or authorized distributors?
All SIRA06DDP-T1-UE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA06DDP-T1-UE3 meets industry standards.
7.What is the process for return or replacement of SIRA06DDP-T1-UE3?
All SIRA06DDP-T1-UE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA06DDP-T1-UE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA06DDP-T1-UE3 part is unused and in its original packaging.
Return procedure for SIRA06DDP-T1-UE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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