Vishay Siliconix SIRA10BDP-T1-GE3

Overview

SIRA10BDP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) of 3.6 mΩ at VGS = 10 V and 5.0 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.

For engineers reviewing the SIRA10BDP-T1-GE3 datasheet, SIRA10BDP-T1-GE3 pinout, SIRA10BDP-T1-GE3 application, or SIRA10BDP-T1-GE3 equivalent, key selection criteria include its low gate charge (11.7 nC at VGS = 4.5 V), robust UIS rating, 100 % Rg tested performance, and thermal advantage over standard SO-8 due to exposed drain pad and 2.3 °C/W junction-to-case resistance.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low RDS(on) while maintaining fast switching characteristics-total gate charge is 11.7 nC at 4.5 V drive, with turn-on delay of 17 ns and fall time of 15 ns under 4.5 V gate drive conditions. Its body diode exhibits trr = 38 ns and Qrr = 36 nC at IF = 10 A, supporting efficient synchronous rectification.

The PowerPAK SO-8 package provides a leadless, thermally enhanced footprint identical to standard SO-8 but with exposed copper drain terminals on the bottom surface, enabling direct thermal coupling to PCB copper. Steady-state RthJC is 2.3 °C/W max, and RthJA is 25 °C/W max on FR4 board-significantly lower than conventional SO-8 packages.

Key Specifications

Pinout & Package

PowerPAK® SO-8 single-channel package: 6.15 mm × 5.15 mm footprint, 1.0 mm height, leadless construction with exposed drain terminals on bottom surface. Compatible with standard SO-8 land patterns; drain pads require extended copper area for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3, SIRA10BDP-T1-GE3 delivers lower RDS(on) and gate charge for higher efficiency in high-current VRMs; versus IRLHS6342TRPBF, it offers superior thermal performance and lower switching loss but requires PowerPAK-specific layout practices.

Availability

SIRA10BDP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, high-reliability MOSFETs with validated UIS performance and RoHS-compliant packaging.

Supply support for SIRA10BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIRA10BDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-density, high-efficiency power conversion in computing, telecom, and industrial systems where thermal management and low gate drive requirements are critical.

FAQ

What is the maximum continuous drain current rating for SIRA10BDP-T1-GE3 at case temperature of 70 °C?

The SIRA10BDP-T1-GE3 is rated for 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with sufficient copper area on the drain pad and is limited by package thermal capability-not silicon derating. The device maintains this current rating up to TJ = 150 °C under steady-state conditions.

Does SIRA10BDP-T1-GE3 support 3.3 V gate drive in logic-level applications?

SIRA10BDP-T1-GE3 is characterized down to VGS = 4.5 V, with RDS(on) = 5.0 mΩ max at that voltage. At 3.3 V gate drive, the device remains partially enhanced but is not guaranteed to achieve low RDS(on); typical VGS(th) is 1.2–2.4 V, so 3.3 V may yield RDS(on) >15 mΩ. For reliable 3.3 V operation, consider Vishay's SiR626DP or similar logic-level optimized variants.

How does the PowerPAK SO-8 package of SIRA10BDP-T1-GE3 improve thermal performance over standard SO-8?

The SIRA10BDP-T1-GE3 uses PowerPAK SO-8, which replaces gull-wing leads with an exposed copper drain pad on the bottom surface. This reduces RthJC to 2.3 °C/W (vs. ~16 °C/W for standard SO-8) and enables direct thermal conduction to PCB copper. On a 1" × 1" FR4 board, RthJA is 25 °C/W max-~30 % lower than conventional SO-8-allowing higher sustained current without heatsinks.

Is SIRA10BDP-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SIRA10BDP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested with single-pulse avalanche energy EAS = 20 mJ and peak current IAS = 20 A (L = 0.1 mH). This makes it suitable for flyback, active clamp, and other topologies where inductive energy must be safely absorbed by the MOSFET without external snubbers-provided layout minimizes stray inductance.

What is the recommended solder profile for reflow assembly of SIRA10BDP-T1-GE3?

The SIRA10BDP-T1-GE3 follows JEDEC J-STD-020 lead-free reflow guidelines: peak temperature 255 °C ± 0 °C for ≤30 s, time above 217 °C between 60–150 s, ramp-up rate ≤3 °C/s, and ramp-down rate ≤6 °C/s. Vishay document 73257 provides the full profile. Manual soldering with iron is not recommended due to thermal stress on the leadless package.