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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA12BDP-T1-GE3

Name: SIRA12BDP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA12BDP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA12BDP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA12BDP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 27A/60A PPAK SO8

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Product details

Overview

SIRA12BDP-T1-GE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 4.3 mΩ at V_GS = 10 V and 6.0 mΩ at V_GS = 4.5 V, with 74 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.

For engineers reviewing the SIRA12BDP-T1-GE3 datasheet, SIRA12BDP-T1-GE3 pinout, SIRA12BDP-T1-GE3 application, or SIRA12BDP-T1-GE3 equivalent, key selection criteria include its low gate charge (Q_g = 10 nC typ. at 4.5 V), robust 100 % R_g and UIS tested reliability, and thermal performance matching DPAK-level R_thJC = 2.6 °C/W while maintaining SO-8 footprint compatibility.

Technical Context

This MOSFET employs a trench-based silicon structure enabling sub-5 mΩ on-resistance at 10 V drive while sustaining 30 V V_DS rating and 16 A avalanche current capability. Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) supports both 4.5 V and 10 V logic-level drive, and it features integrated body diode with t_rr = 37–70 ns and Q_rr = 37–60 nC for fast switching recovery.

The PowerPAK SO-8 package uses exposed copper drain pads on the bottom surface to achieve junction-to-case thermal resistance of 2.6 °C/W (typ.), enabling high-power density operation without external heatsinking. It is lead (Pb)-free and halogen-free, qualified for reflow per JEDEC J-STD-020 with peak temperature up to 255 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 30 V rail applications
R_DS(on) max @ V_GS = 10 V	4.3 mΩ - Enables <1 W conduction loss at 74 A, critical for VRM efficiency
R_DS(on) max @ V_GS = 4.5 V	6.0 mΩ - Supports direct drive from 5 V controllers without level-shifting
Q_g typ.	10 nC @ 4.5 V - Reduces gate drive power and enables >1 MHz switching in DC/DC
I_D continuous	74 A @ T_C = 25 °C - High current capacity suitable for single-phase CPU/GPU VRMs
R_thJC max	3.3 °C/W - Low thermal resistance allows efficient heat transfer to PCB copper
Body diode V_SD	0.75–1.1 V @ I_S = 10 A - Low forward drop minimizes reverse conduction losses

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad, 5.15 mm × 6.15 mm footprint, 1.0 mm height). Matches standard SO-8 land pattern with extended drain area for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing
5	Gate (G)	Single gate input with R_g = 0.3–2.8 Ω - optimized for low-noise, stable switching
6, 7, 8	Drain (D)	Three drain terminals connected to exposed bottom copper pad - primary thermal and power path

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables 4.3 mΩ R_DS(on) at 30 V while maintaining ruggedness against UIS and dv/dt stress
100 % R_g and UIS tested	Guarantees gate robustness and unclamped inductive switching survival for automotive/industrial reliability
PowerPAK SO-8 package	Delivers DPAK-equivalent thermal performance (R_thJC = 2.6 °C/W) in SO-8 footprint - no PCB redesign needed
Low Q_gd/Q_g ratio	Q_gd = 2.6 nC / Q_g = 10 nC → 0.26 - improves hard-switching EMI and reduces Miller-induced shoot-through risk
Fast body diode recovery	t_rr = 37 ns typ., Q_rr = 37 nC - reduces reverse recovery loss and ringing in synchronous rectifiers

Applications

Server VRM Phase Legs	High-Density DC/DC Converters
Use Scenario: Primary high-side or low-side switch in multiphase buck converters powering modern CPUs and GPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier handling up to 74 A continuous current with minimal conduction loss. Use Value: 4.3 mΩ R_DS(on) at 10 V reduces conduction loss by >30 % vs. legacy SO-8 MOSFETs, improving full-load efficiency by ~1.2 %.	Use Scenario: Output rectification in compact 12 V–1 V point-of-load modules for telecom and networking equipment. IC Role / Device Role / Timing Role: High-current, low-V_DS switch operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 6.0 mΩ R_DS(on) at 4.5 V eliminates need for gate drivers, simplifying layout and reducing BOM count.
Embedded Power Supplies	Industrial Motor Control Drivers
Use Scenario: Integrated power stage in FPGA or SoC carrier boards requiring tight thermal management. IC Role / Device Role / Timing Role: High-efficiency, thermally robust switch mounted directly on 4-layer FR4 with internal copper planes. Use Value: R_thJC = 2.6 °C/W enables 38 W power dissipation at T_C = 25 °C - sustains full current without derating on standard PCBs.	Use Scenario: Half-bridge leg in BLDC motor gate driver ICs or discrete inverter stages for HVAC and pumps. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated N-channel switch handling repetitive inductive turn-off stress. Use Value: 16 A single-pulse avalanche current (I_AS) and 13 mJ E_AS ensure reliable operation under motor phase commutation faults.

Server VRM Phase Legs

High-Density DC/DC Converters

Use Scenario: Primary high-side or low-side switch in multiphase buck converters powering modern CPUs and GPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier handling up to 74 A continuous current with minimal conduction loss.

Use Value: 4.3 mΩ R_DS(on) at 10 V reduces conduction loss by >30 % vs. legacy SO-8 MOSFETs, improving full-load efficiency by ~1.2 %.

Use Scenario: Output rectification in compact 12 V–1 V point-of-load modules for telecom and networking equipment.

IC Role / Device Role / Timing Role: High-current, low-V_DS switch operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 6.0 mΩ R_DS(on) at 4.5 V eliminates need for gate drivers, simplifying layout and reducing BOM count.

Embedded Power Supplies

Industrial Motor Control Drivers

Use Scenario: Integrated power stage in FPGA or SoC carrier boards requiring tight thermal management.

IC Role / Device Role / Timing Role: High-efficiency, thermally robust switch mounted directly on 4-layer FR4 with internal copper planes.

Use Value: R_thJC = 2.6 °C/W enables 38 W power dissipation at T_C = 25 °C - sustains full current without derating on standard PCBs.

Use Scenario: Half-bridge leg in BLDC motor gate driver ICs or discrete inverter stages for HVAC and pumps.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated N-channel switch handling repetitive inductive turn-off stress.

Use Value: 16 A single-pulse avalanche current (I_AS) and 13 mJ E_AS ensure reliable operation under motor phase commutation faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR178DP-T1-GE3	R_DS(on) = 3.9 mΩ @ 10 V, Q_g = 11.5 nC, same PowerPAK SO-8 package	Marginally lower R_DS(on) but higher gate charge - better for low-frequency, high-current; worse for high-frequency efficiency	Prefer SiR178DP-T1-GE3 only when conduction loss dominates and switching frequency < 300 kHz
IRLHS6342TRPBF	R_DS(on) = 5.2 mΩ @ 4.5 V, Q_g = 12.5 nC, PQFN 3.3 × 3.3 mm package	Smaller footprint but higher R_DS(on) and thermal resistance - requires more aggressive PCB copper for same current	Choose IRLHS6342TRPBF only when board space is constrained and thermal budget allows 10–15 % higher loss

Compared with SiR178DP-T1-GE3 and IRLHS6342TRPBF, the SIRA12BDP-T1-GE3 offers optimal balance of ultra-low R_DS(on), moderate Q_g, and proven SO-8-compatible thermal performance - making it the preferred choice for mainstream high-density VRMs where layout reuse and thermal margin are critical.

Availability

SIRA12BDP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, high-density DC/DC converters, and embedded power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIRA12BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIRA12BDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered specifically for high-current, high-efficiency synchronous rectification in next-generation computing and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIRA12BDP-T1-GE3 at 70 °C case temperature?

The SIRA12BDP-T1-GE3 supports 59 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction, and the device maintains R_DS(on) = 4.3 mΩ (max) at V_GS = 10 V across its full operating junction temperature range of –55 °C to +150 °C. Designers must verify PCB copper area and airflow to sustain this current reliably.

Does SIRA12BDP-T1-GE3 support 4.5 V gate drive in high-frequency synchronous rectifier applications?

Yes, the SIRA12BDP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 6.0 mΩ (max) at I_D = 7 A and Q_g = 10 nC (typ.) at V_GS = 4.5 V. Its low Q_gd/Q_g ratio (0.26) and fast switching times (t_r = 31–60 ns, t_f = 12–25 ns) make it suitable for synchronous rectification up to 1 MHz in DC/DC converters without gate boosting.

How does the PowerPAK SO-8 package of SIRA12BDP-T1-GE3 compare thermally to a standard SO-8 MOSFET?

The SIRA12BDP-T1-GE3's PowerPAK SO-8 package achieves R_thJC = 2.6 °C/W (typ.), matching DPAK performance and offering ~5× lower junction-to-case resistance than standard SO-8 packages (~16 °C/W). This enables 38 W power dissipation at T_C = 25 °C - versus ~5 W for standard SO-8 - while using identical PCB land patterns, eliminating redesign effort.

Is SIRA12BDP-T1-GE3 suitable for avalanche energy handling in motor control applications?

Yes, the SIRA12BDP-T1-GE3 is rated for 16 A single-pulse avalanche current (I_AS) and 13 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. These values are validated per JEDEC JESD24-1, confirming suitability for inductive load switching in BLDC motor half-bridges where controlled turn-off energy must be absorbed internally without external snubbers.

What is the body diode forward voltage and reverse recovery performance of SIRA12BDP-T1-GE3?

The SIRA12BDP-T1-GE3 body diode exhibits V_SD = 0.75–1.1 V at I_S = 10 A and T_J = 25 °C, with reverse recovery time t_rr = 37–70 ns and Q_rr = 37–60 nC under IF = 10 A, di/dt = 100 A/μs conditions. These parameters enable low-loss freewheeling and reduced EMI in synchronous rectifier topologies without requiring external Schottky diodes.

SIRA12BDP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 1470 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA12BDP-T1-GE3 FAQ

1.How can I place an order for SIRA12BDP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA12BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA12BDP-T1-GE3 reliable?

The price and inventory of SIRA12BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA12BDP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA12BDP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA12BDP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA12BDP-T1-GE3?

SIRA12BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA12BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA12BDP-T1-GE3?

For technical support, including SIRA12BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA12BDP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA12BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA12BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA12BDP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA12BDP-T1-GE3?

All SIRA12BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA12BDP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA12BDP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA12BDP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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