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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIRA16DP-T1-GE3

Name: SIRA16DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIRA16DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA16DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA16DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 16A PPAK SO-8

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Product details

Overview

SIRA16DP-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV Power MOSFET in a PowerPAK® SO-8 package, rated for 16 A continuous drain current at T_J = 150 °C, with R_DS(on) = 6.8 mΩ at V_GS = 10 V and 9.7 mΩ at V_GS = 4.5 V, used in high-current load switching and DC/DC conversion.

For engineers reviewing the SIRA16DP-T1-GE3 datasheet, SIRA16DP-T1-GE3 pinout, SIRA16DP-T1-GE3 application, or SIRA16DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100 % R_g and UIS tested reliability, thermal resistance R_thJC = 3.5 °C/W, and compatibility with compact power rail designs requiring high efficiency and fast switching.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low gate charge (Q_g = 13.2 nC typ. at V_GS = 4.5 V) and low output capacitance (C_oss = 543 pF), enabling high-frequency synchronous rectification and efficient PWM control in space-constrained power stages.

Its PowerPAK® SO-8 leadless package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with maximum steady-state junction-to-case thermal resistance of 4.2 °C/W and junction-to-ambient R_thJA = 32 °C/W on FR4 (1" × 1").

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; supports 24 V rail systems with margin for transients.
R_DS(on) @ V_GS = 10 V	6.8 mΩ max - Enables <1 W conduction loss at 16 A, critical for high-efficiency load switches.
R_DS(on) @ V_GS = 4.5 V	9.7 mΩ max - Ensures robust operation with 5 V logic-level gate drivers without level shifting.
Q_g	13.2 nC typ. - Low total gate charge reduces driver power and switching losses in high-frequency converters.
I_D (continuous)	16 A @ T_C = 25 °C - Rated for sustained high-current delivery when mounted on thermally adequate PCB copper.
R_thJC	3.5 °C/W typ. - Enables direct heat transfer to heatsink or internal copper plane, supporting >20 W power dissipation with minimal ΔT.
V_GS(th)	1.0–2.3 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, bottom-side thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with exposed copper drain terminals on underside.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return path for load current; electrically tied to internal source metallization and top-side solderable pad.
2 (G)	Gate	Control terminal; low input capacitance (C_iss = 2060 pF) enables fast switching with modest driver strength.
3 (S)	Source	Second source connection; paralleled with Pin 1 to reduce source inductance and improve current sharing.
4 (G)	Gate	Second gate connection; reduces gate loop inductance for improved EMI and dV/dt immunity.
5–8 (D)	Drain	Four paralleled drain terminals forming bottom-side thermal pad; primary path for power conduction and heat extraction.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_g figure-of-merit in its voltage class, optimizing trade-off between conduction and switching losses.
100 % R_g and UIS tested	Ensures gate robustness against overvoltage and ruggedness under unclamped inductive switching stress-critical for motor and solenoid drives.
PowerPAK® SO-8 package	Reduces thermal resistance by 50 % vs. standard SO-8; eliminates leadframe thermal bottleneck via direct copper drain exposure.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant industrial and computing end equipment.

Applications

DC/DC Conversion	High-Current Power Rails
Use Scenario: Used as synchronous rectifier in 12 V → 1.2 V buck converter for CPU core power delivery. IC Role / Device Role / Timing Role: Low-side switch handling peak currents up to 16 A with sub-10 mΩ on-resistance at 4.5 V gate drive. Use Value: Reduces conduction loss by >35 % versus older Gen III MOSFETs, improving full-load efficiency from 89 % to 92.5 %.	Use Scenario: Load switch controlling 24 V/10 A auxiliary rail in server motherboard VRM output stage. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) pass device with fast turn-on (<20 ns td(on)) for hot-swap sequencing. Use Value: Minimizes voltage drop (<100 mV at 10 A) and thermal rise (<15 °C ΔT), eliminating need for external heatsink.
Battery Protection	DC/AC Inverters
Use Scenario: Back-to-back configuration in Li-ion battery pack protection IC circuit for overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: Bidirectional current-blocking element with body diode V_SD = 0.78 V and t_rr = 28 ns for fast reverse recovery. Use Value: Enables <5 µs fault response time while maintaining <200 mW standby loss during normal operation.	Use Scenario: Half-bridge leg in 48 V input micro-inverter for solar panel string optimization. IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd (2.2 nC) MOSFET enabling 100 kHz PWM with minimal shoot-through risk. Use Value: Achieves <0.5 % switching loss contribution at 10 A, extending inverter MTBF by reducing junction temperature cycling.

DC/DC Conversion

High-Current Power Rails

Use Scenario: Used as synchronous rectifier in 12 V → 1.2 V buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: Low-side switch handling peak currents up to 16 A with sub-10 mΩ on-resistance at 4.5 V gate drive.

Use Value: Reduces conduction loss by >35 % versus older Gen III MOSFETs, improving full-load efficiency from 89 % to 92.5 %.

Use Scenario: Load switch controlling 24 V/10 A auxiliary rail in server motherboard VRM output stage.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) pass device with fast turn-on (<20 ns td(on)) for hot-swap sequencing.

Use Value: Minimizes voltage drop (<100 mV at 10 A) and thermal rise (<15 °C ΔT), eliminating need for external heatsink.

Battery Protection

DC/AC Inverters

Use Scenario: Back-to-back configuration in Li-ion battery pack protection IC circuit for overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: Bidirectional current-blocking element with body diode V_SD = 0.78 V and t_rr = 28 ns for fast reverse recovery.

Use Value: Enables <5 µs fault response time while maintaining <200 mW standby loss during normal operation.

Use Scenario: Half-bridge leg in 48 V input micro-inverter for solar panel string optimization.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd (2.2 nC) MOSFET enabling 100 kHz PWM with minimal shoot-through risk.

Use Value: Achieves <0.5 % switching loss contribution at 10 A, extending inverter MTBF by reducing junction temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; smaller Micro3 package; R_thJA = 150 °C/W (no thermal pad)	Limited to ≤3 A continuous use; unsuitable for >5 W power dissipation or high ambient temp environments	Select only for ultra-low-cost, low-power logic-level switching where thermal headroom is abundant.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V but 4.5 mΩ @ 4.5 V; dual-N in SO-8; higher Q_g = 22 nC @ 4.5 V	Higher gate drive energy increases controller loading; dual configuration adds routing complexity for single-switch use	Prefer when dual-switch topology is required; avoid if minimizing gate drive loss or board area is priority.

Compared with IRLML6344TRPBF and DMN3025LSD-13, the SIRA16DP-T1-GE3 uniquely balances 16 A current rating, 9.7 mΩ R_DS(on) at 4.5 V, and 3.5 °C/W R_thJC in a thermally optimized single-N package-making it optimal for high-density, high-efficiency 24–30 V power rails where thermal management and gate drive simplicity are critical.

Availability

SIRA16DP-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC conversion, high-current power rails in computing, and battery protection applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for SIRA16DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on high-reliability, high-efficiency, and thermally optimized packaging.

The SIRA16DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in space-constrained computing, telecom, and industrial systems where low R_DS(on) × Q_g and robust thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIRA16DP-T1-GE3 at 70 °C case temperature?

The SIRA16DP-T1-GE3 is rated for 16 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design per Vishay's recommended minimum pads for PowerPAK® SO-8 and accounts for package-limited conduction capability-not junction temperature derating alone. The SIRA16DP-T1-GE3 maintains this current level without exceeding its 150 °C maximum junction temperature under steady-state conditions.

Does SIRA16DP-T1-GE3 support 3.3 V logic-level gate drive?

The SIRA16DP-T1-GE3 has a gate threshold voltage V_GS(th) of 1.0–2.3 V, but its R_DS(on) is not characterized below V_GS = 4.5 V. At 3.3 V gate drive, the device will partially enhance but cannot guarantee R_DS(on) ≤ 9.7 mΩ or safe 16 A operation. For reliable 3.3 V logic compatibility, a gate driver with bootstrapped or charge-pump output is recommended. The SIRA16DP-T1-GE3 datasheet does not specify performance at 3.3 V, so full conduction must be verified per application.

What is the thermal resistance from junction to case (R_thJC) for SIRA16DP-T1-GE3, and how is it measured?

The SIRA16DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance R_thJC of 3.5 °C/W, with a maximum of 4.2 °C/W, measured under steady-state conditions with the case temperature referenced to the center of the exposed drain pad on the bottom of the PowerPAK® SO-8 package. This value reflects direct conduction through the copper drain terminals into the PCB thermal plane or heatsink, and is validated using JEDEC JESD51-14 standards. The SIRA16DP-T1-GE3 achieves this low R_thJC due to its leadless construction and large-area copper thermal interface.

Is SIRA16DP-T1-GE3 suitable for avalanche energy handling in inductive load switching?

Yes-the SIRA16DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ and single-pulse avalanche current I_AS = 15 A (L = 0.1 mH). These ratings apply under defined test conditions (T_J = 25 °C, V_DD = 30 V) and confirm ruggedness for flyback, relay, and solenoid driving where inductive kickback occurs. The SIRA16DP-T1-GE3's UIS qualification provides design margin beyond basic SOA compliance.

How does the PowerPAK® SO-8 package of SIRA16DP-T1-GE3 differ from standard SO-8 in thermal performance?

The PowerPAK® SO-8 package used by SIRA16DP-T1-GE3 replaces traditional leads with an exposed copper drain pad on the bottom surface, eliminating the thermal bottleneck of leadframe conduction. This yields R_thJC = 3.5 °C/W-over 5× better than standard SO-8 (typically ~20 °C/W)-and enables >25 W power dissipation with appropriate PCB copper area. Unlike standard SO-8, the SIRA16DP-T1-GE3 requires solder reflow to the bottom thermal pad per Vishay's profile (peak 260 °C), and manual iron rework is not recommended.

SIRA16DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2060 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA16DP-T1-GE3 FAQ

1.How can I place an order for SIRA16DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA16DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA16DP-T1-GE3 reliable?

The price and inventory of SIRA16DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA16DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIRA16DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA16DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA16DP-T1-GE3?

SIRA16DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA16DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA16DP-T1-GE3?

For technical support, including SIRA16DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA16DP-T1-GE3 requirements.

6.How does Aetrix verify that SIRA16DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIRA16DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA16DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIRA16DP-T1-GE3?

All SIRA16DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA16DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA16DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIRA16DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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