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Vishay Siliconix SIRA20BDP-T1-GE3
- Part No.:
- SIRA20BDP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIRA20BDP-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 82A/335A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,287
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Product details
Overview
SIRA20BDP-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 0.58 mΩ at VGS = 10 V and 0.82 mΩ at VGS = 4.5 V, with 54 nC total gate charge (typ.) and 335 A continuous drain current (TC = 25 °C). It serves as a high-current synchronous rectifier or hot-swap switch in high-efficiency DC/DC converters.
For engineers reviewing the SIRA20BDP-T1-GE3 datasheet, SIRA20BDP-T1-GE3 pinout, SIRA20BDP-T1-GE3 application, or SIRA20BDP-T1-GE3 equivalent, key selection criteria include low RDS(on) × Qg figure-of-merit, 100 % Rg and UIS testing, and thermal performance under high-current pulsed loads in battery management systems.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology optimized for ultra-low conduction loss and fast switching in high-current, low-voltage applications. Its gate threshold voltage (1.0–2.1 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight VGS(th) temperature coefficient (−5.4 mV/°C).
The device features integrated body diode with 0.72–1.1 V forward voltage (VSD) at 10 A and 56–110 ns reverse recovery time (trr). Thermal design leverages a 0.9 °C/W typical junction-to-case (RthJC) path to support high-power density layouts on FR4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12 V and 24 V system rail protection and OR-ing |
| RDS(on) @ 10 V | 0.58 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-current DC/DC output stages |
| RDS(on) @ 4.5 V | 0.82 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIO or PMIC drivers |
| Qg (typ.) | 54 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in synchronous buck converters |
| ID (cont., TC = 25 °C) | 335 A - Supports single-device implementation in high-current hot-swap and battery disconnect circuits |
| RthJC (max) | 1.2 °C/W - Allows direct thermal coupling to heatsink or copper plane for sustained >200 W power dissipation |
| VGS(th) | 1.0–2.1 V - Guarantees turn-on margin across temperature and process variation in automotive-grade designs |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), JEDEC-compliant footprint with thermal pad on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with 0.2–1.8 Ω gate resistance - supports controlled turn-on/turn-off without external gate resistor |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper paddle - primary thermal and current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on) × Qg FOM for minimal conduction + switching loss trade-off |
| 100 % Rg tested | Ensures gate resistance consistency (0.2–1.8 Ω), critical for predictable switching timing in paralleled configurations |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 90 A avalanche current |
| Exposed drain paddle | Enables <1.2 °C/W junction-to-case thermal resistance - essential for thermally constrained 3D packaging |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| Battery Management System (BMS) | High-Current DC/DC Converter |
|---|---|
Use Scenario: Bidirectional current control and cell balancing in 12 V/24 V lithium-ion battery packs with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: High-side N-channel MOSFET used as active fuse and isolation switch, driven by dedicated battery protection IC. Use Value: 0.58 mΩ RDS(on) limits voltage drop to <24 mV at 40 A, preserving state-of-charge accuracy and reducing thermal stress on pack interconnects. |
Use Scenario: Synchronous rectification in 48 V–12 V step-down converter for server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck topology, operating at 500 kHz–1 MHz with gate drive synchronized to high-side FET. Use Value: 54 nC Qg and 0.82 mΩ RDS(on) at 4.5 V enable >95 % efficiency at 100 A output with minimal gate driver power consumption. |
| Hot-Swap Controller Interface | OR-ing FET for Redundant Power |
Use Scenario: Inrush current limiting and fault isolation for pluggable modules in industrial backplanes and data center line cards. IC Role / Device Role / Timing Role: Main pass FET controlled by LTC4215/LM5069 hot-swap controller, handling up to 335 A surge during insertion. Use Value: 350 A pulse diode forward current (ISM) and 405 mJ single-pulse avalanche energy (EAS) withstand transient bus faults without failure. |
Use Scenario: Redundant 12 V power rail combining from dual PSUs in network switches and storage controllers. IC Role / Device Role / Timing Role: Back-to-back configured OR-ing FET pair preventing reverse current flow and enabling seamless switchover. Use Value: 0.72 V typical body diode forward voltage (VSD) minimizes forward drop during switchover, reducing heat generation vs. Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 0.75 mΩ @ 4.5 V; Qg = 42 nC; PowerPAK 1212-8 package (smaller footprint, higher RthJA) | Lower current rating (160 A cont.) - suitable for space-constrained but lower-power OR-ing | Select when board area is limited and peak current ≤160 A; verify thermal margin due to higher RthJA (25 °C/W) |
| DMTH3010LPSQ-13 | RDS(on) = 0.95 mΩ @ 4.5 V; Qg = 47 nC; PowerPAIR® 3x3 package; AEC-Q101 qualified | Automotive-qualified variant - adds HTOL, ESD, and temperature cycling validation for vehicle ECUs | Select for automotive battery disconnect or 12 V DC/DC where AEC-Q101 compliance is mandatory |
Compared with IRLHS6342TRPBF and DMTH3010LPSQ-13, SIRA20BDP-T1-GE3 offers the lowest RDS(on) and highest continuous current capability in PowerPAK SO-8, making it optimal for industrial and enterprise power systems demanding maximum current density and thermal headroom.
Availability
SIRA20BDP-T1-GE3 is available at Aetrix Electronics and suitable for battery management, high-current DC/DC converters, and hot-swap switch applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SIRA20BDP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIRA20BDP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered for ultra-low RDS(on) × Qg in high-current, low-voltage infrastructure and computing power supplies.
FAQ
What is the maximum continuous drain current rating for SIRA20BDP-T1-GE3 at 70 °C case temperature?
The SIRA20BDP-T1-GE3 supports 268 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-power operation and must be validated against actual PCB layout and heatsinking in the target application.
Does SIRA20BDP-T1-GE3 require a gate resistor for reliable switching?
The SIRA20BDP-T1-GE3 has a typical gate resistance (Rg) of 0.9 Ω and is 100 % Rg tested, enabling predictable switching behavior. While an external gate resistor is not mandatory, a 1–5 Ω resistor is recommended to dampen ringing and control dV/dt in high-frequency, high-current layouts - especially when paralleling multiple SIRA20BDP-T1-GE3 devices.
Can SIRA20BDP-T1-GE3 be used in a back-to-back configuration for AC switching or reverse polarity protection?
Yes, SIRA20BDP-T1-GE3 can be used in back-to-back configuration for reverse polarity protection and bidirectional blocking. Its 25 V VDS, low RDS(on), and robust body diode (94.5 A continuous, 350 A pulsed) support this topology. However, ensure gate drive circuitry maintains both FETs fully enhanced during conduction and avoids shoot-through during transitions.
What is the thermal resistance from junction to ambient (RthJA) for SIRA20BDP-T1-GE3 on a standard 1" × 1" FR4 board?
On a 1" × 1" FR4 board per datasheet note b, the SIRA20BDP-T1-GE3 has a maximum RthJA of 20 °C/W (typical 15 °C/W). This value assumes standard soldering per profile doc#73257 and does not reflect performance on boards with enhanced thermal vias or copper pours - those require custom thermal simulation or measurement.
Is SIRA20BDP-T1-GE3 suitable for use with 3.3 V logic-level gate drive?
No - SIRA20BDP-T1-GE3 is not guaranteed to fully enhance with 3.3 V gate drive. Its VGS(th) range is 1.0–2.1 V, but RDS(on) is only specified at VGS = 4.5 V and 10 V. At 3.3 V, RDS(on) increases significantly (not characterized in datasheet), risking excessive conduction loss and thermal runaway; use only with ≥4.5 V drive.
SIRA20BDP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 82A (Ta), 335A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 186 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9950 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.3W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIRA20BDP-T1-GE3 FAQ
1.How can I place an order for SIRA20BDP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIRA20BDP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIRA20BDP-T1-GE3 reliable?
The price and inventory of SIRA20BDP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA20BDP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIRA20BDP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA20BDP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIRA20BDP-T1-GE3?
SIRA20BDP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIRA20BDP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIRA20BDP-T1-GE3?
For technical support, including SIRA20BDP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA20BDP-T1-GE3 requirements.
6.How does Aetrix verify that SIRA20BDP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIRA20BDP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA20BDP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIRA20BDP-T1-GE3?
All SIRA20BDP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA20BDP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIRA20BDP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIRA20BDP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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